• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.12
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• pp.192-199
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• 2001

Chemical mechanical planarization (CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There hale been serious problems in CMP in terms of repeatability and deflects in patterned wafers. Especial1y, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasives and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using CeO$_2$is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method fur developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.6
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• pp.91-97
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• 2018

Chemical mechanical polishing(CMP) realizes a surface planarity through combined mechanical and chemical means. In CMP process, Preston equation is known as one of the most general approximation of the removal rate. Effects of pressure and relative speed on the mechanical property of Cu CMP has been investigated. On the other hand, The amount of abrasion also increased with changes in pressure and speed, resulting in a proportional increase of temperature during CMP. Especially this temperature is an important factor to change chemical reaction in a Cu CMP. However, when the slurry temperature became higher than $70^{\circ}C$, the removal rate went lower due to abrasives aggregation and scratching occurred on the Cu film. Therefore, it was found that the slurry temperature should not exceed $70^{\circ}C$ during Cu CMP. Finally, authors could increase the pressure, speed and slurry temperature up to a ceratin level to improve the removal rate without surface defects.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.7
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• pp.8-13
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• 2019

As increasing demand for precise machining in advanced disciplines, especially in semi-conductor, aeronautical and automotive industries, the magnetic abrasive deburring(MAD) which is able to eliminate micro-sized burr on complex surface in less time has drawn the attention in the last decades. However, the performance of MAD is subject to shape and size of a tool. Therefore, this study aim to identify deburring behavior of MAD in U-type flow channel by measuring the length rate of burr removal in radial distance of the cylindrical tool under four process factors. In order to evaluate the deburring effect of MAD on the surface, finishing regions are divided based on center of the circular cutting tool. As a results, it was defined that the amount of burr removal in a downward direction moving toward flow channel from the top surface was higher than upward direction. This is because the magnetic abrasives were detached from magnetic lines of force due to geometrical shape.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.12
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• pp.1285-1289
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• 2012

This study has been focused on application of ELID lapping process for mirror-surface machining of sapphire wafer. Sapphire wafer is a superior material with optic properties of high performance as light transmission, thermal conductivity, hardness and so on. High effective surface machining technology is necessary to use sapphire as various usages. The interval ELID lapping process has been set up for lapping of the sapphire material. According to the ELID lapping experimental results, it shows that 12.5 kg of load for lapping is most pertinent to ELID lapping. the surface of sapphire can be eliminated by metal bonded wheel with micron abrasives and the surface roughness of 60 nmRa can be gotten using grinding wheel of 2,000 mesh in 4.5 um, depth of cut. In this study, the chemical experiments after ELID grinding also has been conducted to check chemical reaction between workpiece and grinding wheel on ELID grinding process. It shows that the chemical reaction has not happened as the results of the chemical experiments.

• Tribology and Lubricants
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• v.13 no.1
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• pp.34-41
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• 1997

Frictional behavior of three automotive friction materials (brake pads) containing different amounts of antimony trisulfide ($Sb_2S_3$) and zirconium silicate ($ZRSiO_4$) were investigated using a front brake system. The friction materials were tested on a brake dynamometer (dyno) with gray cast iron rotors. The dynamometer(dyno) test simulated the dragging of a ehicle maintaining 70 km/h and vehicle stops from 100 km/h using 20 different combinations of initial brake temperature (IBT) and input pressure (IP). The results showed a strong influence of the relative amount of $Sb_2S_3$ and $ZrSiO_4$ in friction materials on friction characteristics. Friction stability was improved with the higher concentration of $Sb_2S_3$ in the friction material. Torque variation during drag cycle was increased with an increase of the $ZrSiO_4$ concentration in the friction material. Average friction coefficient and the wear rate of the friction material increased by using more aggressive friction materials containing more $ZrSiO_4$ and less $Sb_2S_3$. Generation of the disk thickness variation (DTV) increased when friction materials with higher concentration of $ZrSiO_4$ were used Careful examination of DTV change showed that aggressiveness of the friction material played an important role in determining torque variation.

• Tribology and Lubricants
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• v.32 no.2
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• pp.50-55
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• 2016

Recently, a double-side machining process has been adopted in fabricating a sapphire glass to enhance the manufacturability. Double-side lap grinding (DLG) is one of the emerging processes that can reduce process steps in the fabrication of sapphire glasses. The DLG process uses two-body abrasion with fixed abrasives including pallet. This process is designed to have a low pressure and high rotational speed in order to obtain the required material removal rate. Thus, the temperature is distributed on the DLG platen during the process. This distribution affects the shape of the substrate after the DLG process. The coolant that is supplied into the cooling channel carved in the base platen can help to control the temperature distribution of the DLG platen. This paper presents the results of computational fluid dynamics with regard to the heat transfer in a DLG platen, which can be used for fabricating a sapphire glass. The simulation conditions were 200 rpm of rotational speed, 50℃ of frictional temperature on the pallet, and 20℃ of coolant temperature. The five cases of the coolant flow rate (20~36 l/min) were simulated with a tetrahedral mesh and prism mesh. The simulation results show that the capacity of the generated cooling system can be used for newly developed DLG machines. Moreover, the simulation results may provide a process parameter influencing the uniformity of the sapphire glass in the DLG process.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.2 s.95
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• pp.145-152
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• 1999

This paper presents the principle and experimental results of a non-contact surface roughness measurement by means of screen projected pattern of lase beam reflected from a polished surface. In the reflected laser beam pattern especially from a fine surface like ground or polished one, light intensity varies from the center fo the image to its boundary as the Gaussian distribution. The standard deviation of a light intensity distribution is assumed to be a good non-contact estimator for measuring the surface roughnes, because the light reflectivity is known to be well related with the surface roughness. This method doesn't need to discriminate between the specularly reflected light and the diffusely reflected one, whereas the scattered laser intensity method must do. Nor it needs to adjust the change of light intensity caused by environmental lights or specimen materials. Reflected laser beam pattern narrowly spreads out in the vertical direction to tiny scratches on the polished surface due to abrasives. The deeper the scratch the more the dispersion, which means the rougher surface. The standard deviation of the pattern is nearly in proportion to the surface roughness. Measurement errors by this method are shown to be below 10 percent compared with those obtained by a common contact method. The inclination of measuring unit from the normal axis causes the measurement errors up to 10 percent for an angle of 4 degree. Therefore the proposed method can be used as an on-the-machine quick roughness estimator within 10 percent measurement error.

• Journal of IKEEE
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• v.23 no.4
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• pp.1175-1181
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• 2019

In this paper, we have studied the chemical mechanical polishing(CMP) characteristics of mixed abrasive silica slurry(MAS) retreated by adding of manganese oxide(MnO₂) abrasives within 1:10 diluted silica slurry. A slurry designed for optimal performance should produce high removal rates, acceptable polishing selectivity with respect to the underlying layer, low surface defects after polishing, and good slurry stability. The polishing performances of MnO₂ abrasive-added MAS are evaluated with respect to their particle size distribution, surface morphology, and CMP performances such as removal rate and non-uniformity. As an experimental result, we obtained the comparable slurry characteristics compared to original silica slurry in the view-point of high removal rate and low non-uniformity. Therefore, our proposed MnO₂-MAS can be useful to save on the high cost of slurry consumption since we used a 1:10 diluted silica slurry.

• Molecular & Cellular Toxicology
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• v.5 no.2
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• pp.172-178
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• 2009

Nanoparticles are small-scale substances (<100 nm) with unique properties, complex exposure and health risk implications. Aluminum oxide ($Al_2O_3$) nanoparticles (NP) have been widely used as abrasives, wear-resistant coatings on propeller shafts of ships, to increase the specific impulse per weight of composite propellants used in solid rocket fuel and as drug delivery systems to increase solubility. However, recent studies have shown that nano-sized aluminum (10 nm in diameter) can generate adverse effects, such as pulmonary response. The cytotoxicity and genotoxicity of $Al_2O_3$ NP were investigated using the dye exclusion assay, the comet assay, and the mouse lymphoma thymidine kinase (tk$^{+/-}$) gene mutation assay (MLA). IC$_{20}$ values of $Al_2O_3$ NP in BEAS-2B cells were determined the concentration of 273.44 $\mu$g/mL and 390.63 $\mu$g/mL with and without S-9. However IC$_{20}$ values of $Al_2O_3$ NP were found nontoxic in L5178Y cells both of with and without S-9 fraction. In the comet assay, L5178Y cells and BEAS-2B cells were treated with $Al_2O_3$ NP which significantly increased 2-fold tail moment with and without S-9. Also, the mutant frequencies in the $Al_2O_3$ NP treated L5178Y cells were increased compared to the vehicle controls with S-9. The results of this study indicate that $Al_2O_3$ NP can cause primary DNA damage and cytotoxicity but not mutagenicity in cultured mammalian cells.