• 한국정밀공학회지
• /
• 제33권5호
• /
• pp.385-392
• /
• 2016

Recently in the display industry, demands for high-luminance and resolution of display devices have been steadily increasing. Generally, micro linear patterns are applied to an optical film in order to improve its properties of light. However, these patterns are easily viewed to eyes and moire phenomenon can be occurred. Micro random patterns are proposed as a method to solve these problems, increasing light-luminance and light-diffusion. However, conventional pattern manufacturing technologies have long processing times and high costs making it difficult to apply to large area molds. In order to combat this issue, micro-random patterns are formed by using a roll to plate indentation method along with abrasive paper tools composed of AlSiO2, SiC, and diamond grains. Also, forming properties, such as size and fill-factor of random patterns, are analyzed depending on type, mesh of abrasive paper tools, and indentation forces.

• 한국화재소방학회논문지
• /
• 제32권6호
• /
• pp.108-116
• /
• 2018

구리 용융흔(Melted bead) 미세조직(Microstructure)은 변형층(Deformed layer)과 원조직(Undeformed layer)으로 구분할 수 있다. 변형층이 존재하는 경우에는 측정오류가 발생되어 연마/미세연마(Grinding/Polishing)를 통하여 변형층을 제거하고 원조직을 관측하여야 한다. 이에 따라 본 연구에서는 구리 용융흔의 미세조직 분석을 위한 연마/미세연마 절차(Process)를 제시하였다. 변형층 제거를 위해 연마재 종류/크기, 연마시간, 연마율의 상관성을 분석하였고 변형층의 두께를 $1{\mu}m$ 이하가 되도록 하였다. 연구결과, 실리콘카바이드 연마재 $15{\mu}m$ (SiC P1200) 2 min, $10{\mu}m$ (SiC P2400) 1 min, 다이아몬드 연마재 $6{\mu}m$ 8 min, $3{\mu}m$ 6 min, $1{\mu}m$ 10 min, $.25{\mu}m$ 8 min 실시하는 새로운 연마/미세연마 절차를 제시하였다. 또한 최종 단계에서 3 min 동안 콜로이달 실리카 $.04{\mu}m$로 화학적 미세연마를 실시함으로써 미세조직의 선명성을 증대시키는 방안도 제시하였다. 연마/미세연마 시간은 총 38 min이 소요되며, 기존에 제시된 시간, 절차보다 단순화 하였다.

• Tribology and Lubricants
• /
• 제27권6호
• /
• pp.351-355
• /
• 2011

Al/SiC composites were fabricated by thermal spray process, and the dry sliding wear tests were performed using the various sliding speed of 10, 30, 60 and 90 RPM through 1000 cycles. The applied load was 10 N and radius of wear track was 15 mm. Wear tracks on the Al/SiC composites were investigated using scanning electron microscope(SEM) and energy dispersive X-ray spectroscopy (EDS). In the case of sliding speed of 10 RPM, adhesive wear behavior caused by plastic deformation of composits surface was observed. In the cases of sliding speed of 30, 60, 90 RPM, abrasive wear behavior on the adhered layer formed by debris were observed. Through this study, it was found that the wear behavior of Al/SiC composites was mainly influenced by the sliding speed.

• 한국세라믹학회지
• /
• 제50권2호
• /
• pp.122-126
• /
• 2013

The surface roughness of the inner and outer surfaces of a tube is an important requirement for nuclear fuel cladding. When an inner SiC clad tube, which is considered as an advanced Pressurized Water Cooled Reactor (PWR) clad with a three-layered structure, is fabricated by Chemical Vapor Deposition (CVD), the surface roughness of the substrate, graphite, is an important process parameter. The surface character of the graphite substrate could directly affect the roughness of the inner surface of SiC deposits, which is in contact with a substrate. To evaluate the effects of the surface roughness changes of a substrate, SiC deposits were fabricated using different types of graphite substrates prepared by the following four polishing paths and heat-treatment for purification: (1) polishing with #220 abrasive paper (PP) without heat treatment (HT), (2) polishing with #220 PP with HT, (3) #2400 PP without HT, (4) polishing with #2400 PP with HT. The average surface roughnesses (Ra) of each deposited SiC layer are 4.273, 6.599, 3.069, and $6.401{\mu}m$, respectively. In the low pressure SiC CVD process with a graphite substrate, the removal of graphite particles on the graphite surface during the purification and the temperature increasing process for CVD seemed to affect the surface roughness of SiC deposits. For the lower surface roughness of the as-deposited interlayer of SiC on the graphite substrate, the fine controlled processing with the completed removal of rough scratches and cleaning at each polishing and heat treating step was important.

• Journal of Welding and Joining
• /
• 제18권5호
• /
• pp.105-111
• /
• 2000

The wear behavior of thermal sprayed AlSiMg-40TiC composite coatings were studied as a function of load and sliding velocity under unlubricated conditions. Experiments were performed using a block-on-ring(WC-6wt%/Co, Hv 1500) type. The tests were carried out a various load(30∼ 125.5N) and sliding velocity(0.5∼2.0m/s). Three wear rate regions were observed in the AlSiMg-40TiC composite coatings. The wear rate in region I at low load (less then 8N( were less than 1×{TEX}$10^{-5}${/TEX}㎣/m. Low wear rates in region I resulted from the load-bearing capacity of TiC particles. The transition from region I to II occurred when the applied load exceeded the fracture and pull-out strength of the particles. The TiC fractured particles trapped between the specimen and the counterface acted as third-body abrasive wear. The subsurface layer worn surface in region II was composed of the mechanically mixed layer (MML). The wear rate increase abruptly above a critical load (region III). The high wear rate in region III was induced by frictional temperature and involves massive surface damage.

• Tribology and Lubricants
• /
• 제35권5호
• /
• pp.274-285
• /
• 2019

Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.

• 한국세라믹학회지
• /
• 제38권12호
• /
• pp.1080-1084
• /
• 2001

Alumina-based nanocomposites have improved mechanical properties such as hardness, fracture toughness and fracture strength compared to monolithic ceramics. In this study, alumina with 5 vol% of nanosized SiC was sintered by a hot pressing technique at 1600$\^{C}$, 30 MPa for 1h in an argon gas atmosphere. Microstructures and mechanical properties in alumina-SiC nanocomposite were investigated. Moreover, tribological properties in air and water were compared each other. Relationships of wear properties with mechanical properties such as hardness, strength, and fracture toughness as well as microstructure were studied. Based on experimental results it was found that nanosized SiC retarded grain growth of matrix alumina. Mechanical properties such as hardness, fracture toughness and strength were improved by the addition of nanosized SiC in alumina. Improved mechanical properties resulted in increased sliding wear resistance. Tribological behavior of nanocomposites in water seemed to be governed by abrasive wear.

• 유기물자원화
• /
• 제32권1호
• /
• pp.21-29
• /
• 2024

본 연구에서는 반도체 패키징의 몰딩 공정에서 발생하는 EMC 폐기물을 재활용하여 실리카 나노입자를 성공적으로 제조하였으며, 이를 CMP 공정용 슬러리의 연마재 물질로 응용하였다. 상세히는, EMC 폐기물을 암모니아 용액과 소니케이터를 활용하여 열과 에너지를 가하는 에칭 과정을 통해 실리카 나노입자를 제조하기 위한 실라놀 전구체를 추출하였다. 이후 실라놀 전구체를 활용하여 졸-겔법을 통해 약 100nm를 나타내는 균일한 구형의 실리카 나노입자(e-SiO₂, experimentally synthesized SiO₂)를 합성하였다. 제조한 e-SiO₂는 물리화학적 분석을 통해 상용화된 실리카 입자(c-SiO₂, commercially SiO₂)와 동일한 형상과 구조를 지니고 있음을 확인할 수 있었다. 최종적으로, e-SiO₂를 연마재로 사용하여 CMP 공정용 슬러리를 제조하여 실제적인 반도체 칩의 연마 성능을 확인하였다. 그 결과, 반도체 칩의 표면에 존재하던 스크래치가 성공적으로 제거되어 매끈한 표면으로 바뀌게 된 것을 확인하였다. 본 연구 결과는 물질의 재활용법에 대한 설계를 통해 EMC 폐기물의 부가가치를 향상시키기 위하여 반도체 공정에서 대표적으로 활용되는 고부가가치 소재인 실리카 입자로 성공적으로 제조하고 이를 응용하는 방법에 대해 제시하였다.

• 한국세라믹학회지
• /
• 제48권2호
• /
• pp.189-194
• /
• 2011

Metallurgical grade silicon was recovered from slurry waste for ingot sawing process by acid leaching and thermal treatment. SiC abrasive was removed by gravity concentration and centrifugation. Metal impurities were removed by the acid leaching using HF/HCl. The remaining SiC was separated by the thermal treatment at $1600^{\circ}C$ in an inert atmosphere by the difference in melting points. The purity of the obtained silicon was found to be around 99.7%.

• 한국세라믹학회지
• /
• 제47권3호
• /
• pp.232-236
• /
• 2010

In recent years abrasive water jet (AWJ) has received significant attention as a technology used in the manufacturing industry for cutting materials. In this paper we report the development of a new preparation method of abrasives for water jet by using an air bubbling sedimentation rate control technique. The SiC abrasives prepared by an air bubbling sedimentation rate control technique using latex resin are found to be superior to the conventional abrasives not only in surface roughness uniformity but also in lifetime. The AWJ test results also show that the former has also better impact-resistance and wear-resistance than the latter.