• 한국공작기계학회논문집
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• 제13권1호
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• pp.9-15
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• 2004

In this study, experiments were conducted with an ultra-precision machine, developed in domestic, to find the characteristics and the most suitable cutting conditions of ultra-precision machining. To maximize the performance of the machine, the machine was installed in a room that is protected from vibration and is maintained constant temperature and constant humidity. Selected work pieces are an aluminum-alloyed material, which has excellent corrosion resistance and has low deformation. The used tool is synthetic poly crystal diamond, which has excellent abrasion resistance and has low affinity. Four types of tool nose radius were used such as 0, 0.1, 0.2 and 0.4mm. Machining is performed with cutting speed of 500, 800 and 1000m/min., feed rate of 0.005, 0.008, 0.010mm/rev. and cutting depth of 0.0005, 0.0025 and 0.005mm respectively which can generally be used in the field as a cutting condition. As a method of evaluation, surface roughness was measured for each cutting condition, and reciprocal characteristics are computed for each tool nose radius, cutting speed, feed rate and cutting depth. As a result, the most suitable cutting condition and characteristics of ultra-precision machining were identified which can usefully be applied in the industrial field.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• 소성∙가공
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• 제13권3호
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• pp.225-229
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• 2004

Chemical Mechanical Polishing(CMP) process becomes one of the most important semiconductor processes. But the basic mechanism of CMP still does not established. Slurry fluid dynamics that there is a slurry film between a wafer and a pad and contact mechanics that a wafer and a pad contact directly are the two main studies for CMP. This paper based on the latter one, especially on the abrasion wear model. Material Removal Rate(MRR) is calculated using the trajectory length of every point on a wafer during the process time. Both the rotational velocity of a wafer and a pad and the wafer oscillation velocity which has omitted in other studies are considered. For the purpose of the verification of our simulation, we used the experimental results of S.H.Li et al. The simulation results show that the tendency of the calculated MRR using the relative velocity is very similar to the experimental results and that the oscillation effect on MRR at a real CMP condition is lower than 1.5%, which is higher than the relative velocity effect of wafer, and that the velocity factor. not the velocity itself, should be taken into consideration in the CMP wear model.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• 한국진공학회지
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• 제10권2호
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• pp.182-188
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• 2001

폴리카보네이트 시트의 내마모성을 향상시키기 위하여 HMDSO 모노머와 산소를 사용하여 플라즈마 기상증착시킨 $SiO_xC_y$ 필름의 특성을 분석하였다. RF출력, 산소투입량, 수소투입량을 변화시키면서 각 증착조건에 따른 생성된 필름의 화학결합구조, 원소조성, 표면조도, 헤이즈 특성에 미치는 영향을 FTIR, XPS, AFM, Hazemeter를 이용하여 알아보았다. HMDSO와 산소를 사용한 박막의 증착은 100 nm/min이상의 높은 증착속도를 가졌고,증착실험에서 얻은 증착필름의 원소조성을 XPS를 이용하여 구한 결과, 종전의 다른 유기실리콘계 모노머를 사용했을때보다 박막에 존재하는 탄소잔류물을 효과적으로 감소시키는 것을 확인하였다. 또한, RF출력 200 Watt에서 산소가 100 sccm투입되었을 때 가장 우수한 헤이즈 특성을 보이는 막을 얻을 수 있었다. 본 연구로부터 HMDSO/$O_2$시스템이 탄소함량이 낮은 박막을 형성시키고 내마모도가 좋은 박막을 증착시키는데 효과적인 것을 알 수 있었다.

• 한국터널지하공간학회 논문집
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• 제20권2호
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• pp.453-467
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• 2018

쉴드 TBM 공사에서 굴진율 예측과 마모량 예측은 설계 및 시공 단계에서 공사비와 공기를 추정하는데 매우 중요한 요소이다. 암반지반용 TBM의 경우 실험이나 축적된 현장 data를 기반으로 CSM 모델, NTNU 모델 등이 커터 마모량부터 굴진율 예측까지 널리 사용되고 있으나, 토사지반용 TBM은 지반의 복잡성과 정확한 실험방법의 부재로 인해 이를 정확하게 예측할 수 있는 모델이 없는 실정이다. 본 연구에서는 기존에 존재하는 토사지반용 TBM 실험장치들의 단점을 개선하여 TBM 굴착과정을 모사한 실험 장치(Soil Abrasivity Penetration Test, SAPT)를 개발하였다. 회전당 관입 깊이, RPM, 첨가재(foam) 배합비 및 농도 등의 TBM 굴진에 영향을 미치는 주요 변수들에 대한 시험을 실시하여 추력, 토크 등의 변화를 살펴보고 마모량을 측정하였다. 모래(규사) 70%와 점토(일라이트) 30%로 조성된 인공시료에 대한 실험 결과 foam 배합비가 굴진성능과 마모량에 주요한 영향을 끼치는 것으로 나타났다.

• 한국터널지하공간학회 논문집
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• 제16권2호
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• pp.237-248
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• 2014

TBM의 사양을 설계하고 굴진성능을 예측할 때 실대형 선형절삭시험을 통하여 설계변수를 획득하는 것이 매우 효과적인 방법인 것으로 알려져 있다. 하지만 선형절삭시험을 위해서는 대형 시편을 획득하고 큰 하중용량의 시험을 수행하는 과정에서 상당한 비용과 노력이 소모된다는 단점이 있다. 따라서 선형절삭시험을 대체하는 경험적 예측 모델, 즉 CSM모델과 NTNU모델을 사용하여 몇 가지 지수를 산정하고 이로부터 설계변수를 추정하는 경우가 많다. 본 연구에서는 압입시험 및 세르샤 마모시험을 이용하여 TBM의 사양(추력, 토크)과 굴착에 따라 소요되는 디스크 커터의 개수를 추정하는 방법에 대하여 고찰하였다. 압입시험과 세르샤 마모시험은 TBM의 설계 변수를 추정하기 위한 유용한 시험법이나 그 활용법이 연구 되고 있지 못한 실정이다. 이 연구에서는 압입시험과 세르샤 마모시험결과를 간단한 형태의 지수형태로 도출하고 이를 선형절삭시험 및 실제 굴진자료와 비교하여 상관관계를 도출하고 이로 부터 디스크 커터의 작용력 및 수명을 예측하였다. 또한 이 일련의 계산 과정을 프로그램화 하였으며, 터널의 연장 정보, TBM의 기계정보, 구간별 암석의 물성을 입력변수로 하여 구간별 굴진율과 TBM 사양 및 운영조건, 디스크 커터의 소모개수를 예측할 수 있었다.

• Elastomers and Composites
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• 제41권3호
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• pp.194-204
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• 2006

본 연구에서는 카본블랙 충전제의 입자크기 및 구조에 따른 고무 배합물의 마찰 마모 특성을 고찰하였다. 카본블랙의 입자크기와 구조에 따라 마모속도 및 형상이 다르게 되며, 최적 마모성능을 설계하기 위해서는 충전제의 입자크기와 구조의 마모 영향도를 사용조건에 따라 고려하여야 한다. 충전제의 입자크기와 구조에 따른 마모속도($W_R$) 영향도를 수준별로 고찰하기 위해 본 연구에서는 구조와 입자크기가 다른 10가지의 카본블랙을 선택하여 동일한 양을 천연고무와 배합하였다. 자체 제작한 칼날형 마찰 마모 시험기를 이용하여 마찰 마모 특성을 평가하였고, 카본블랙의 입자크기와 구조의 영향을 고려한 특성인자(${\psi}=\sqrt{{N_2^2}+{DBP^2}}$)와의 관계를 고찰하였다. 마모속도($W_R$)와 마찰일($W_f$)의 간에는 power-law 관계가 있었으며, 마모속도는 카본블랙의 특성인자에 역비례 관계를 보였다. 이는 카본블랙의 입자 크기가 작고 구조가 잘 발달 될수록 마모 저항특성은 향상된다는 것을 나타낸다.

• 한국수소및신에너지학회논문집
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• 제24권5호
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• pp.428-436
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• 2013

Attrition characteristics of $CO_2$ absorbents for pre-combustion $CO_2$ capture were investigated to check attrition loss of those absorbents and to determine solid circulation direction and the better $CO_2$ absorbent. The cumulative attrition losses of two absorbents increased with increasing time. However, attrition loss under a humidified condition was lower than that under a non-humidified condition case. Between two absorbents, attrition loss of PKM1-SU absorbent was higher than that of P4-600 absorbent. The average particle sizes of the attrited particles were less than $2.5{\mu}m$ for two absorbents under a non-humidified condition case, and therefore, we could conclude that the main mechanism of attrition for two absorbents is not fragmentation but abrasion. Based on the results from the test for the effect of humidity on the attrition loss, we selected solid circulation direction from SEWGS reactor to regeneration reactor because the SEWGS reactor contains more water vapor than regeneration reactor. Attrition loss and make-up rate of two absorbents were compared based on the results from $CO_2$ sorption capacity tests and attrition tests. Required make-up rate of P4-600 absorbent was lower than that of PKM1-SU absorbent. However, more detail investigation on the optimum regeneration temperature, manufacturing cost, solid circulation rate, regeneration rate, and long-term sorption capacity should be considered to select the best $CO_2$ absorbent.

• Tribology and Lubricants
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• 제32권2호
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• pp.50-55
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• 2016

Recently, a double-side machining process has been adopted in fabricating a sapphire glass to enhance the manufacturability. Double-side lap grinding (DLG) is one of the emerging processes that can reduce process steps in the fabrication of sapphire glasses. The DLG process uses two-body abrasion with fixed abrasives including pallet. This process is designed to have a low pressure and high rotational speed in order to obtain the required material removal rate. Thus, the temperature is distributed on the DLG platen during the process. This distribution affects the shape of the substrate after the DLG process. The coolant that is supplied into the cooling channel carved in the base platen can help to control the temperature distribution of the DLG platen. This paper presents the results of computational fluid dynamics with regard to the heat transfer in a DLG platen, which can be used for fabricating a sapphire glass. The simulation conditions were 200 rpm of rotational speed, 50℃ of frictional temperature on the pallet, and 20℃ of coolant temperature. The five cases of the coolant flow rate (20~36 l/min) were simulated with a tetrahedral mesh and prism mesh. The simulation results show that the capacity of the generated cooling system can be used for newly developed DLG machines. Moreover, the simulation results may provide a process parameter influencing the uniformity of the sapphire glass in the DLG process.