Transactions of Materials Processing (소성∙가공)

The Korean Society for Technology of Plasticity and materials processing (한국소성∙가공학회)
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MRR model for the CMP Process Considering Relative Velocity

상대속도를 고려한 CMP 공정에서의 연마제거율 모델

  • 김기현 (서울대학교 기계항공공학부 미세성형연구실) ;
  • 오수익 (서울대학교 기계항공공학) ;
  • 전병희 (인덕대학)
  • Published : 2004.06.01
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Abstract

Chemical Mechanical Polishing(CMP) process becomes one of the most important semiconductor processes. But the basic mechanism of CMP still does not established. Slurry fluid dynamics that there is a slurry film between a wafer and a pad and contact mechanics that a wafer and a pad contact directly are the two main studies for CMP. This paper based on the latter one, especially on the abrasion wear model. Material Removal Rate(MRR) is calculated using the trajectory length of every point on a wafer during the process time. Both the rotational velocity of a wafer and a pad and the wafer oscillation velocity which has omitted in other studies are considered. For the purpose of the verification of our simulation, we used the experimental results of S.H.Li et al. The simulation results show that the tendency of the calculated MRR using the relative velocity is very similar to the experimental results and that the oscillation effect on MRR at a real CMP condition is lower than 1.5%, which is higher than the relative velocity effect of wafer, and that the velocity factor. not the velocity itself, should be taken into consideration in the CMP wear model.

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References

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