• KOREAN JOURNAL OF CROP SCIENCE
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• v.61 no.2
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• pp.87-91
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• 2016

Recently, rice growth and production have been influenced by climatic change worldwide. In particular, under low solar radiation and cloudy weather, rice plants show abnormal physiological responses. In this experiment, plants of the rice cultivar Samgwangbyeo grown 40% and 70% shading and natural conditions at the primordium initiation stage (PI) for 30 days and the booting stage for 10 days up to heading were compared. After shading treatments, culm lengths were significnatly longer than that in natural condition plots, and panicle lengths were shorter in the 40% and 70% shading treatment plots compared to control plots. After heading, the production of dry matter treated at the PI stage was significantly lower than that at the booting stage. SPAD values of the leaf color and N concentration of leaves treated with shading were greater than those under natural conditions. In the shading treatment, the lodging index at 20 days after heading was significantly higher than that in natural condition. For yield components, number of panicles, spikelet number per panicle, and ripened grain ratio significantly decreased with shading treatment; thus, rice yield decreased significantly. For rice quality, the protein content of the head rice treated with shading was significantly higher than that in the control plot, but the amylose content of rice treated with shading was signifiantly lower than that in rice in control plots.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.573-579
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• 2011

Highly textured Ag, Al and Al:Si back reflectors for flexible n-i-p silicon thin-film solar cells were prepared on 100-${\mu}m$-thick stainless steel substrates by DC magnetron sputtering and the influence of their surface textures on the light-scattering properties were investigated. The surface texture of the metal back reflectors was influenced by the increased grain size and by the bimodal distribution that arose due to the abnormal grain growth at elevated deposition temperatures. This can be explained by the structure zone model (SZM). With an increase in the deposition temperatures from room temperature to $500^{\circ}C$, the surface roughness of the Al:Si films increased from 11 nm to 95 nm, whereas that of the pure Ag films increased from 6 nm to 47 nm at the same deposition temperature. Although Al:Si back reflectors with larger surface feature dimensions than pure Ag can be fabricated at lower deposition temperatures due to the lower melting point and the Si impurity drag effect, they show poor total and diffuse reflectance, resulting from the low reflectivity and reflection loss on the textured surface. For a further improvement of the light-trapping efficiency in solar cells, a new type of back reflector consisting of Ag/Al:Si bilayer is suggested. The surface morphology and reflectance of this reflector are closely dependent on the Al:Si bottom layer and the Ag top layer. The relationship between the surface topography and the light-scattering properties of the bilayer back reflectors is also reported in this paper.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.64 no.4
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• pp.344-352
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• 2019

Drought stress caused by global climate change is a serious problem for rice cultivation. Increasingly frequent abnormal weather occurrences could include severe drought, which could cause water stress to rice during the seedling stage. This experiment was conducted to clarify the effects of drought during the seedling period on yield and quality of rice. Drought conditions were created in a rain shelter house facility. The drought treatment was conducted at 3, 10, and 20 days after transplanting. Soil water content was measured by a soil moisture sensor during the whole growth stage. In this study, we have chosen 3 rice cultivars which are widely cultivated in Korea: 'Haedamssal' (Early maturing), 'Samkwang' (Medium maturing), and 'Saenuri' (Mid-late maturing). The decrease in yield due to drought treatment was most severe 3 days after transplanting because of the decrease in the number of effective tillers. The decrease in grain quality due to drought treatment was also most severe 3 days after transplanting because of the increased protein content and hardness of the grains. The cultivar 'Haedamssal' was the most severely damaged by water stress, resulting in about a 30% yield loss. Drought conditions diminished the early vigorous growth period and days to heading in early-maturing cultivars. The results show that drought stress affects yield components immediately after transplanting, which is a decisive factor in reducing yield and grain quality. This study can be used as basic data to calculate damage compensation for drought damage on actual rice farms.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.15
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• pp.85-97
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• 1974

In order to clarify the inducing conditions and cause of sterility in rice plants, 4 varieties were cooled at 3 different levels of temperature combined with 3 different levels of treatment period. And 19 varieties were tested to examine the varietal difference of cold resistance. The results obtained were summarized as follows; 1. There were significant varietal differences in the effect of cooling treatment at meiotic stage. Suwon 213-1 was induced heavy sterility by 3 day cooling treatment at 17.5$^{\circ}C$ whereas Hayayuki, Nongpaik and Jinheung were induced a little sterility by 3 day cooling treatment at 15$^{\circ}C$ and 5 day treatment at 17.5$^{\circ}C$. The per cent of grain fertility was correlated significantly with the delayed days to heading, the degree of panicle extraction (Suwon 213-1, Nongpaik, Jinheung), culm length (Nongpaik, Suwon 213-1), and Auricle distance (Suwon 213-1). The degree of sterility was able to be estimated from the linear regression equation between the degree of panicle extraction (distance from panicle neck to flag leaf) and fertility percentage. In the case of heavy cold damage by the treatment of low temperature at meiotic stage, the rice plant had somewhat lower pollen density per anther, small and ununiform anther and pollen in size, and more sterile pollen grains. Suwon 213-1 showed anthesis in almost all spikelets, while Nongpaik, Jinheung and Hayayuki indicated considerable number of indehisced anther at 5 days after heading. 2. The fertility were not generally higher in cooling treatment at heading stage than at meiotic stage treatment. And significant correlation was found between the percentage of grain fertility treated at above two stages. Nongpaik and Jinheung were not affected in percentage of fertility by 5 day treatment at 15$^{\circ}C$ when these were treated at heading stage. Indehisced anthers were not found in Suwon 213-1 and Hayayuki, but Nongpaik and Jinheung showed more anthers which did not show anthesis 3. There was different varietal response to low temperature which was indicated by the decrease of grain fertility resulted from cooling treatment at meiotic stage. Jaekeun and Jinheung did not show low fertility but Milseong, Suwon 210, Satominoli and Suwon 213-1 showed outstanding decrease in fertility percentage by the cooling treatment at meiotic stage. The varieties which had low fertility were likely to have low pollen density per anther, abnormal anthers, small size po]]en grains and many sterile pollens. 4. Remarkable varietal difference of cold resistance was found in heading stage cooling treatment. Nongpaik, Jinheung, Jaekeun, Paltal, Akibare, Milseung and Palkeong were not affected in grain fertility by cooling treatments but Nonglimna No. 1, Suseong, Hayayuki, Suwon 213-1 and Suwon 210 showed significantly high sterility as treated by cool temperature. Most of the varieties showed higher fertility by cooling treatment at heading stage than meiotic stage but Hayayuki, Suseong and Nonglimna No.1 showed lower fertility when these were treated at heading stage than meiotic stage. There were two grops of varieties in the response to cooling treatment, one was somewhat non-anthesised and the other showed full anthesis. 5. In cold injury test of young seedlings, the result of observation was not accorded with the degree of growth inhibition. As a general, Palkeum and Suseong were highly torelant to cool temperature but Suwon 213-1, Jaekeun, Paltal, Shirogane, Palkeong, Mankyung were highly susceptible. 6. There is no significant correlation between the degree of young seedling cold damage and or the degree of growth retardation at seedling stage and grain fertility resulted from coding treatment both heading and meiotic stage.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.11
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• pp.2015-2022
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• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.11
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• pp.505-513
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• 2006

The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.808-815
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.37-45
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• 2003

The dielectric and sintering characteristics of composites made by substituting Ca ion to Ba-site and Zr ion to Ti site in $(Ba{1-x}Ca_x)(Ti{0.96-yZr_ySn_{0.04})O_3$ $(0.15{\leq}x{\leq}0.20,\;0.09{\leq}y{\leq}0.14)$ were investigated. As the content of Ca was more than 15 mol%, composite was formed by precipitating the second phase whose main element was $CaTiO_3$ and the fraction of the second phase was increased. The curie temperature of composites was depended on Ca concentration, $-1.7^{\circ}C$ per mol% and the maximum dielectric constant of composite was decreased by the rate of 200/mol%. The substitution of Zr ion decreased the curie temperature by the rate of $10^{\circ}C$ per mol% and the maximum dielectric constant was decreased by 217/mol% due to the increase of diffuse phase transition. The density and insulation breakdown characteristics were improved by suppressing the abnormal grain growth due to the increase of second phase. We developed the composition of Y5U (EIA standard) condenser which had high breakdown voltage and dielectric constant by controlling diffuse phase transition by the addition of Zr ion into composite.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.346-351
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• 2012

$Li_{1+x}Al_xTi_{2-x}(PO_4)_3$(LATP) is a promising solid electrolyte for all-solid-state Li ion batteries. In this study, LATP is prepared through a sol-gel method using relatively the inexpensive reagents $TiCl_4$. The thermal behavior, structural characteristics, fractured surface morphology, ion conductivity, and activation energy of the LATP sintered bodies are investigated by TG-DTA, X-ray diffraction, FE-SEM, and by an impedance method. A gelation powder was calcined at $500^{\circ}C$. A single crystalline phase of the $LiTi_2(PO_4)_3$(LTP) system was obtained at a calcination temperature above $650^{\circ}C$. The obtained powder was pelletized and sintered at $900^{\circ}C$ and $1000^{\circ}C$. The LTP sintered at $900{\sim}1000^{\circ}C$ for 6 h had a relatively low apparent density of 75~80%. The LATP(x = 0.3) pellet sintered at $900^{\circ}C$ for 6 h was denser than those sintered under other conditions and showed the highest ion conductivity of $4.50{\times}10^{-5}$ S/cm at room temperature. However, the ion conductivity of LATP (x = 0.3) sintered at $1000^{\circ}C$ decreased to $1.81{\times}10^{-5}$ S/cm, leading to Li volatilization and abnormal grain growth. For LATP sintered at $900^{\circ}C$ for 6 h, x = 0.3 shows the lowest activation energy of 0.42 eV in the temperature range of room temperature to $300^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.39 no.1
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• pp.26-32
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• 2002

The effects of $Nd_2O_3$ addition to $Q{\cdot}f_{0}(GHz)$ ceramics with ${\varepsilon}_r$ of 126, $Q{\cdot}f_{0}(GHz)$ of 2240 and of $68\;ppm/^{\circ}C$ on their microwave properties were investigated. For the addition of 5 wt% $Nd_2O_3$, the dielectric constant (${\varepsilon}_r$) showed maximum value of 131, then decreased with the further addition of $Nd_2O_3$. $Q{\cdot}f_{0}(GHz)$ value was still increased to 3533 with 9 wt% $Nd_2O_3$ addition, it is influenced by densification of grain boundary. With more addition of $Nd_2O_3$ up to 18 wt%, the abnormal grain growth have influence on the decreasing of $Q{\cdot}f_{0}(GHz)$ value. But with the further addition of $Nd_2O_3$ over 25 wt%, the $Q{\cdot}f_{0}(GHz)$ value was again increased by the effect of the second phase ($Nd_2Ti_2O_7$) forming. The temperature coefficient of resonant frequency (${\tau}_f$) was decreased from $+\;68\;ppm/^{\circ}C$ with the addition of $Nd_2O_3$, reached $0\;ppm/^{\circ}C$ at 12 wt% addition, and became negative with the further addition of $Nd_2O_3$. The optimum microwave dielectric properties were obtained for $0.3CaTiO_3-0.7(Li_{1/2}Nd_{1/2})TiO_3$ with 9 wt% $Nd_2O_3$ sintered at $1425^{\circ}C$ for 3 hrs. The dielectric constant (${\varepsilon}_r$), the $Q{\cdot}f_{0}(GHz)$ value, and the temperature coefficient of resonant frequency (${\tau}_f$) were 108, 3533, and $+\;6\;ppm/^{\circ}C$, respectively.