• 제목/요약/키워드: AZO films

검색결과 244건 처리시간 0.033초

Self-textured Al-doped ZnO transparent conducting oxide for p-i-n a-Si:H thin film solar cell

  • 김도영;이준신;김형준
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 추계학술발표대회
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    • pp.50.1-50.1
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    • 2009
  • Transparent conductive oxides (TCOs) play an important role in thin-film solar cells in terms of low cost and performance improvement. Al-doped ZnO (AZO) is a very promising material for thin-film solar cellfabrication because of the wide availability of its constituent raw materials and its low cost. In this study, AZO films were prepared by low pressurechemical vapor deposition (LPCVD) using trimethylaluminum (TMA), diethylzinc(DEZ), and water vapor. In order to improve the absorbance of light, atypical surface texturing method is wet etching of front electrode using chemical solution. Alternatively, LPCVD can create a rough surface during deposition. This "self-texturing" is a very useful technique, which can eliminate additional chemical texturing process. The introduction of a TMA doping source has a strong influence on resistivity and the diffusion of light in a wide wavelength range.The haze factor of AZO up to a value of 43 % at 600 nm was achieved without an additional surface texturing process by simple TMA doping. The use of AZO TCO resulted in energy conversion efficiencies of 7.7 % when it was applied to thep-i-n a-Si:H thin film solar cell, which was comparable to commercially available fluorine doped tin oxide ($SnO_2$:F).

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IGZO, ZnO, AZO OMO 구조의 Ag두께 변화에 따른 투과율과 에너지 밴드 갭의 변화 (Change in the Energy Band Gap and Transmittance IGZO, ZnO, AZO OMO Structure According to Ag Thickness)

  • 이승민;김홍배;이상렬
    • 한국전기전자재료학회논문지
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    • 제28권3호
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    • pp.185-190
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    • 2015
  • In this study, we fabricated the indium gallium zinc oxide (IGZO), zinc oxide (ZnO), aluminum zinc oxide (AZO). oxide and silver are deposited by magnetron sputtering and thermal evaporator, respectively transparency and energy bandgap were changed by the thickness of silver layer. To fabricate metal oxide metal (OMO) structure, IGZO sputtered on a corning 1,737 glass substrate was used as bottom oxide material and then silver was evaporated on the IGZO layer, finally IGZO was sputtered on the silver layer we get the final OMO structure. The radio-frequency power of the target was fixed at 30 W. The chamber pressure was set to $6.0{\times}10^{-3}$ Torr, and the gas ratio of Ar was fixed at 25 sccm. The silver thickness are varied from 3 to 15 nm. The OMO thin films was analyzed using XRD. XRD shows broad peak which clearly indicates amorphous phase. ZnO, AZO, OMO show the peak [002] direction at $34^{\circ}$. This indicate that ZnO, AZO OMO structure show the crystalline peak. Average transmittance of visible region was over 75%, while that of infrared region was under 20%. Energy band gap of OMO layer was increased with increasing thickness of Ag layer. As a result total transmittance was decreased.

자장 구조 변화에 따른 High Power Impulse Magnetron Sputtering (HIPIMS)에서 Al-doped ZnO 박막 증착 특성 (Magnetic Field Dependent Characteristics of Al-doped ZnO by High Power Impulse Magnetron Sputtering (HIPIMS))

  • 박동희;양정도;최지원;손영진;최원국
    • 한국재료학회지
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    • 제20권12호
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    • pp.629-635
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    • 2010
  • Abstract In this study characteristics of Al-doped ZnO thin film by HIPIMS (High power impulse sputtering) are discussed. Deposition speed of HIPIMS with conventional balanced magnetic field is measured at about 3 nm/min, which is 30% of that of conventional RF sputtering process with the same working pressure. To generate additional magnetic flux and increase sputtering speed, electromagnetic coil is mounted at the back side of target. Under unbalanced magnetic flux from electromagnet with 1.5A coil current, deposition speed of AZO thin film is increased from 3 nm/min to 4.4 nm/min. This new value originates from the decline of particles near target surface due to the local magnetic flux going toward substrate from electromagnet. AZO film sputtered by HIPIMS process shows very smooth and dense film surface for which surface roughness is measured from 0.4 nm to 1 nm. There are no voids or defects in morphology of AZO films with varying of magnetic field. When coil current is increased from 0A to 1A, transmittance of AZO thin film decreases from 80% to 77%. Specific resistance is measured at about $2.9{\times}10-2\Omega{\cdot}cm$. AZO film shows C-axis oriented structure and its grain size is calculated at about 5.3 nm, which is lower than grain size in conventional sputtering.

열처리된 ZnO:Al 투명도전막의 전기적 및 광학적 특성 (Electrical and Optical Properties of Heat Treated ZnO:Al Transparent Conductive Films)

  • 유권규;김정규;박기철
    • 센서학회지
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    • 제8권2호
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    • pp.189-194
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    • 1999
  • 고주파 마그네트론 스퍼터링법으로 증착된 순수한 ZnO 박막 및 Al이 포핑된 ZnO(AZO) 박막의 열처리온도 및 열처리분위기에 따른 전기적 및 광학적 특성을 4점 측정법 및 Hall 효과 측정법을 통한 비저항의 측정과 광투과도의 측정을 통하여 조사하였다. 대기중에서 열처리된 ZnO 박막 및 ZnO:Al 박막은 각각 $200^{\circ}C$$300^{\circ}C$에서 비저항이 현저하게 증가하였으며 수소 플라즈마 분위기에서 열처리된 ZnO 박막은 $500^{\circ}C$의 열처리온도에서 약 1승 정도 비저항이 증가하였으나 ZnO:Al 박막은 열처리온도에 무관하게 비저항이 거의 일정하였다. 550 nm 에서 측정된 광투과도는 90% 정도로 시편의 불순물도핑, 열처리온도 및 열처리분위기에 무관하게 일정한 것으로 나타났다.

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Growth of Aluminum Doped Zinc Oxide Films on Polymer Substrates for Flexible Display Applications

  • Lee, Jae-Hyeong;Lee, Jong-In
    • Journal of information and communication convergence engineering
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    • 제5권3호
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    • pp.219-222
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    • 2007
  • Highly conductive and transparent aluminum doped ZnO thin films (AZO) films have been prepared by r.f. magnetron sputtering processes on poly carbonate (PC) and onto glass as reference. In addition, the electrical, optical properties of the films prepared at various sputtering powers were investigated. The XRD measurements revealed that all of the obtained films were polycrystalline with the hexagonal structure and had a preferred orientation with the c-axis perpendicular to the substrate. The ZnO:Al films were increasingly dark gray colored as the sputter power increased, resulting in the loss of transmittance. High quality films with the resistivity as low as $9.7{\times}10^{-4}\;{\Omega}-cm$ and transmittance over 90% have been obtained by suitably controlling the r.f. power.

원통형 타겟 타입 Pulsed DC Magnetron Sputtering에서 두께 변화에 따른 Al-doped ZnO 박막의 특성 변화 (Thickness Dependent Properties of Al-doped ZnO Film Prepared by Using the Pulsed DC Magnetron Sputtering with Cylindrical Target)

  • 신범기;이태일;박강일;안경준;명재민
    • 한국재료학회지
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    • 제20권1호
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    • pp.47-50
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    • 2010
  • Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.

Properites of transparent conductive ZnO:Al film prepared by co-sputtering

  • Ma, Hong-Chan;Lee, Hee-Young
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.106-106
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    • 2009
  • Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

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Displacement Properties of Nano Structure Dendrimer

  • Song Jin-Won;Lee Kyung-Sup;Lee Woo-Ki;Choi Young-Il;Yoon Suk-Am;Choi Chung-Seog
    • KIEE International Transactions on Electrophysics and Applications
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    • 제5C권1호
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    • pp.28-32
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    • 2005
  • In the Langmuir-Blodgett (LB) technique, a monolayer on the water surface is transferred onto a substrate, which is raised and dipped through the surface. From this, multilayers can be obtained in which constituent molecules are periodically arranged. The LB technique has attracted considerable interest in the fabrication of electrical and electronic devices. Many researchers have investigated the electrical properties of monolayer and multiplayer films. Dendrimers represent a new class of synthetic macromolecules characterized by a regularly branched treelike structure. Multiple branching yields a large number of chain ends that distinguish dendrimers from conventional star-like polymers and microgels. The azobenzene dendrimer is one of the dendritic macromolecules that include the azo-group exhibiting a photochromic character. Due to the presence of the charge transfer element of the azo-group and its rod-shaped structure, these compounds are expected to have potential interest in electronics and ptoelectronics, especially in nonlinear optics. In the present paper, we give pressure stimulation to organic thin films and detect the induced displacement current.