• 반도체디스플레이기술학회지
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• 제15권4호
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• pp.36-40
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• 2016

The 2 wt.% Al-doped ZnO(AZO) thin films were fabricated on PET substrates with various RF power 20, 35, 50, 65, and 80W by using RF magnetron sputtering in order to investigate the structure, electrical and optical properties of AZO thin films in this study. The XRD measurements showed that AZO films exhibit c-axis orientation. At a RF power of 80W, the AZO films showed the highest (002) diffraction peak with a FWHM of 0.42. At a RF power of 65W, the lowest electrical resistivity was about $1.64{\times}[10]$ ^(-4) ${\Omega}-cm$ and the average transmittance of all films including substrates was over 80% in visible range. Good transparence and conducting properties were obtained due to RF power control. The obtained results indicate that it is acceptable for applications as transparent conductive electrodes.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.422-425
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• 2004

In this study, the AZO thin films were prepared as a function of oxygen gas flow ratio at room temperature by FTS(Facing Targets Sputtering) apparatus using Zn:Al(metal)-Zn:Al(metal) or Zn(metal)-ZnO:Al(ceramic). The film thickness, crystalline and electric properties of AZO thin film was evaluated by $\alpha$-step, XRD and 4-point probe. In the results, the resistivity of AZO thin film was shown the lowest value about 8${\times}$10$^{-2}$ $\Omega$-cm(Zn:Al-Zn:Al), 3${\times}$10$^{-1}$ $\Omega$-cm(Zn-ZnO:Al) at the oxygen gas flow ratio 0.3. And the AZO thin film has good crystalline at oxygen gas flow ration 0.4, using Zn:Al-Zn:Al targets.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.103-104
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• 2006

Transparent conductive oxide (TCO) are necessary as front electrode for increased efficiency of LED. In our paper, transparent conducting alminum-doped Zinc oxide films (AZO) were prepared by rf magnetron sputtering on glass (corning 1737) substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The smooth AZO films were etched in diluted HCL (0.5%) to examine the surface morphology properties as a variation of the time. The surface morphology of AZO films increased as a time. We observed texture structure of AZO thin film etched for 1min.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.586-589
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• 2004

In this study, AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. The electrical, optical properties and crystalline of AZO thin film with thickness have been investigated. The thickness, transmittance, crystalline and electrical properties of AZO thin film were measured by a-step, UV-VIS spectrometer, hall effect measurement system, XRD and four-point probe, respectively. As a result, AZO thin film deposited with the transmittance over 80% and the resistivity about $10^{-4}\;\Omega-cm$.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.64-67
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• 2006

RF 스퍼터링법을 이용하여 AZO(Al 2wt%, ZnO 98wt%)박막을 glass위에 증착한 후 증착 시간과 증착 압력에 따른 면저항, roughness 및 광투과도를 조사하였다. 본 연구에서 AZO박막의 면 저항은 4-point probe(Guardian, 402S)으로 측정하였으며 광투과도는 IR-VIS-UV spectrophotometer로 측정하였다. AZO 박막을 20분 증착하는 동안, 아르곤 flow양이 50, 100, 150sccm일 때 면저항은 $20\;{\Omega}/{\square}$이고, 200sccm일 때 $3744\;{\Omega}/{\square}$였다. AZO 박막의 두께를 일정하게 증착하는 동안, 아르곤 flow양이 50sccm일 때 면저항은 $49.6\;{\Omega}/{\square}$이고 100, 150, 200sccm일 때 $38{\Omega}/{\square}$였으며, 광투과도는 모두 80%이상을 보였다. Roughness는 각각 4.1nm, 7.6nm, 5.2nm, 16.9nm였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.149-149
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• 2009

실제 산업에서 가장 많이 사용하고 있는 in-line type system에서 Al-doped ZnO (AZO) 막을 bipolar pulsed DC sputtering을 이용해 증착하였다. 약 30 nm/sec의 속도로 기판을 타겟 좌우로 swing 하면서 동적 증착 공정을 한 AZO 박막의 columnar structure가 정적 증착일 때와 다른 형태의 zigzag-type columnar structure가 형성되었다. 투명전도막의 가장 중요한 특성인 비저항과 투과도가 동적 증착 공정일 때의 박막과 정적 증착 공정일 때의 박막이 각각 $2.5{\times}10^{-3}{\Omega}{\cdot}cm$, 78.5%와 $1.65{\times}10^{-3}{\Omega}{\cdot}cm$, 83.9% 였다. 이렇게 성장하는 막의 구조 형태에 따라 달라지는 특성 변화는 양산하는 현장에서 매우 중요한 것이며, 동적 증착 공정에서의 박막 특성 개선에 정적 증착 공정과는 다른 방법의 연구가 필요할 것이다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 춘계학술대회 논문집
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• pp.114-115
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• 2015

개량한 플라즈마 소스를 이용하여 Al doped ZnO (AZO) 박막을 증착하였다. 이 실험에서 박막의 증착두께를 200nm로 고정하였고 공정압력과 기판사이 거리는 4 mTorr과 4 cm로 정하였다. 인가전력 그리고 윗 타겟 인가전압을 변수로 하였을 경우 AZO 박막의 방향성과 결정성을 XRD로 측정하고 분석하였고 박막의 전기적 특성을 Hall measurment로 측정하였다. 그 결과 인가파워가 2W/cm2, 윗 타겟 인가전압이 0 W 일 때 박막의 전기적 특성이 가장 좋게 나타났다.

• 반도체디스플레이기술학회지
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• 제8권1호
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• pp.33-38
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• 2009

We have investigated the effect of the ambient gases on the characteristics of AZO thin films for the OLED (organic light emitting diodes) devices. These AZO thin films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at 300. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.2sccm to 1sccm and from 0.5sccm to 5sccm, respectively. The AZO thin films were preferred oriented to (002) direction regardless of ambient gases. The electrical resistivity of AZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while under Ar+$H_2$ atmosphere the electrical resistivity showed minimum value near 1sccm of $H_2$. All the films showed the average transmittance over 80% in the visible range. The OLED device was fabricated with different AZO substrates made by configuration of AZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of AZO substrate.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.60-63
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• 2006

Preparing AZO thin films on the polymer substrate has been widely studied Because AZO thin film has the potential applications. In this study, we prepared AZO thin films on polyethersulfon (PES) at room temperature. The AZO thin films were prepared at $O_2$ gas flow rate of 0.05 and sputtering power of 100W with different film thickness by facing targets sputtering method. The electrical, optical and crystallographic properties of AZO thin films were measured by Hall Effect measurement system, UV/VIS spectrometer, SEM and XRD. From the results, we obtained AZO thin films with a low resistivity, a transmittance of over 80% and c-axis preferred orientation.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.207-210
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• 2007

We prepared Al doped ZnO/Ag/Al doped ZnO on the polymer substrate by Facing Target Sputtering (FTS). FTS featured Facing Target Sputtering featured that deposition is stable at the low pressure, it has high plasma density and suppresses the substrate damage from energetic particles. We fixed to 50nm up and down thickness of AZO layer, respectively and that of intermediate Ag layer was adjusted with deposition time. In the result, AZO/Ag/AZO multilayer thin films have much better electrical conductivity than AZO single layer thin film. As increasing the thickness of Ag layer, the transmittance decreased.