• Title/Summary/Keyword: AZO/Ag/AZO

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Influence of Ag thickness on properties of AZO/Ag/AZO Multi-layer Thin Films (AZO/Ag/AZO 다층박막의 Ag두께에 따른 특성 연구)

  • Yeon, Je ho;Kim, Hong Bae
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.2
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    • pp.27-31
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    • 2017
  • AZO/Ag/AZO multi-layer films deposited on glass substrate by RF magnetron sputtering and thermal evaporator have a much better electrical properties than Al-doped ZnO thin films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. The optimum thickness of Ag layers was determined to be $90{\AA}$ for high optical transmittance and good electrical conductivity. The Ag layers thickness $90{\AA}$ is an optical transmittance greater than 80% of visible light and the obtained multilayer thin film with the low resistivity of $8.05{\times}10-3{\Omega}cm$ and the low sheet resistance $5.331{\Omega}/sq$. Applying to TCO and Solar electrode will improve efficiency.

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Influence of Ag Thickness on Electrical and Optical Properties of AZO/Ag/AZO Multi-layer Thin Films by RF Magnetron Sputtering (RF magnetron sputter에 의해 제조된 AZO/Ag/AZO 다층박막의 Ag 두께가 전기적 광학적 특성에 미치는 영향)

  • An Jin-Hyung;Kang Tea-Won;Kim Dong-Won;Kim Sang-Ho
    • Journal of the Korean institute of surface engineering
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    • v.39 no.1
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    • pp.9-12
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    • 2006
  • Al-doped ZnO(AZO)/Ag/AZO multi-layer films deposited on PET substrate by RF magnetron sputtering have a much better electrical properties than Al-doped ZnO single-layer films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the optimum thickness of Ag layers was determined to be $112{\AA}$ for high optical transmittance and good electrical conductivity. With about $1800{\AA}$ thick AZO films, the multi-layer showed a high optical transmittance in the visible range of the spectrum. The electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. A high quality transparent electrode, having a resistance as low as $6\;W/{\square}$ and a high optical transmittance of 87% at 550 nm, was obtained by controlling Ag deposition parameters.

Properties of AZO/Ag/AZO Multilayer Thin Film Deposited on Polyethersulfone Substrate

  • Jung, Yu Sup;Park, Yong Seo;Kim, Kyung Hwan;Lee, Won-Jae
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.1
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    • pp.9-11
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    • 2013
  • The AZO/Ag/AZO multilayer films were deposited on polyethersulfone (PES) substrate by using facing target sputtering methods at room temperature. The AZO/Ag/AZO multilayer films with polymer substrate had advantages, such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, the AZO/Ag/AZO multilayer films (50/12/50 nm) demonstrated a sheet resistance of 11 ${\Omega}/{\square}$ and average transmittance of 87% in visible range (wavelength of 380-770 nm). Moreover, the multilayer showed stable mechanical properties compared to the single-layered AZO sample during the bending test due to the existence of the ductile Ag metal layer.

Characteristics of an AZO/Ag/AZO Transparent Conducting Electrode Fabricated by Magnetron Sputtering for Application in Cu2ZnSn(S,Se)4 (CZTSSe) Solar Cells (Cu2ZnSn(S,Se)4 (CZTSSe) 박막 태양전지 적용을 위한 마그네트론 스퍼터링으로 증착된 AZO/Ag/AZO 투명전극의 특성)

  • Lee, Dong Min;Jang, Jun Sung;Kim, Jihun;Lee, InJae;Lee, Byeong Hoon;Jo, Eunae;Kim, Jin Hyeok
    • Korean Journal of Materials Research
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    • v.30 no.6
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    • pp.285-291
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    • 2020
  • Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu2ZnSn(S,Se)4 (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.5810-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.

Influence of Ag Nano-buffer Layer Thickness on the Opto-electrical Properties of AZO/Ag Transparent Electrode Films (Ag 나노완충층 두께에 따른 AZO/Ag 투명전극의 전기광학적 특성 연구)

  • Eom, Tae-Young;Song, Young-Hwan;Moon, Hyun-Joo;Kim, Dae-Hyun;Cho, Yun-Ju;Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
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    • v.29 no.6
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    • pp.272-276
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    • 2016
  • Al doped ZnO (AZO) single layer and AZO/Ag bi-layered films were deposited on the glass substrates by radio frequency and direct current magnetron sputtering and then the effect of Ag buffer layer on the electrical and optical properties of the films was investigated. The thicknesses of AZO upper layer was kept as 100 nm, while Ag buffer layer was varied from 5 to 15 nm. The observed results mean that opto-electrical properties of the AZO films is influenced with Ag buffer layer and AZO film with 10 nm thick Ag buffer layer show the higher opto-electrical performance than that of the AZO single layer film prepared in this study.

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

  • No, Young-Soo;Yang, Jeong-Do;Park, Dong-Hee;Kim, Tae-Whan;Choi, Ji-Won;Choi, Won-Kook
    • Journal of Sensor Science and Technology
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    • v.22 no.2
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    • pp.105-110
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    • 2013
  • We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 ${\mu}m$) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of $10^{-12}$ A, a threshold voltage of 0.41 V, a field effect mobility of $10.86cm^2/Vs$, and an on/off ratio of $9{\times}10^9$. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.

Electrical and optical properties of back reflecting layer with AZO-Ag bilayer structure on a glass substrate for thin film Si solar cell applications (박막 Si태양전지 응용을 위한 유리기판 위의 AZO-Ag 이중구조 배면전극의 전기광학적 특성)

  • Park, Jaecheol;Hong, ChangWoo;Choi, YoungSung;Lee, JongHo;Kim, TaeWon
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.124.2-124.2
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    • 2011
  • 현재 박막형 태양전지는 실리콘계가 주류를 이루고 있으며, 유리기판 또는 유연성 기판에 비정질 실리콘 박막을 형성시킨 태양전지와 실리콘 기판 양면에 태양전지를 형성하는 방법 등 효율을 극대화시킨 이종접합 태양전지 등이 연구되고 있다. 예컨대 밴드갭이 서로 다른 박막들 간의 이종접합을 이용한 tandem 구조 및 triple 구조의 Si 박막 태양전지의 경우 13%대 변환효율을 나타낸다고 보고된 바 있다. 본 연구에서는 비정질 Si 박막 태양전지 내 흡수층의 효율을 최대화하기 위하여 AZO/Ag 이중구조 박막의 특성에 관한 연구를 수행하고자 한다. combinatorial sputtering system을 이용하여 AZO/Ag 이중구조 박막을 제작하였으며 타겟으로는 4-inch target(Ag, 2wt% Al2O3 doped ZnO)이 사용되었다. 유리기판 상에 combinatorial sputter system으로 상온에서 제작된 Ag 박막의 두께는 25nm로 성장시켰으며 연속공정으로 AZO 박막을 제작하였고, AZO 박막은 100~500nm의 두께경사를 나타내었다. 이 때 유리기판상에 성장된 Ag/AZO 박막의 면저항은 약 $2{\Omega}/{\Box}$ 값을 나타내었다. 본 발표에서는 AZO/Ag 이중 구조 박막의 우수한 전기적 특성을 기반으로 표면 거칠기 및 반사도 특성 등에 관하여 추가적으로 토론한다.

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RF Magnetron Sputter에 의해 제조된 ITO/Ag/AZO 다층박막의 전기적.광학적 특성

  • Kim, Min-Hwan;An, Jin-Hyeong;Kim, Sang-Ho
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2006.10a
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    • pp.51-55
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    • 2006
  • ITO/Ag/AZO and AZ0/Ag/ITO multi-layer films deposited on glass substrate by RF magnetron sputtering have a much better electrical properties than ITO and AZO single-layer films. The multi-layer structure was consisted of three layers of ITO, Ag and AZO. The optimum working pressure of AZO layers deposition was determined to be $1.0{\times}10^{-2}$ torr for high optical transmittance and good electrical conductivity. The electrical and optical properties of sub/IT0/Ag/AZO were higher than those of sub/AZ0/Ag/ITO multi-layer films.

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