• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.109-112
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• 2018

Optical properties of InAs/GaAs submonolayer-quantum dot (SML-QD) have been investigated using excitation intensity ($I_{ex}$)- and temperature-dependent photoluminescence (PL). At a low temperature (13 K) strong PL was observed at 1.420 eV with a very narrow full-width at half maximum, of 7.09 meV. The results of the $I_{ex}$ dependence show that the PL intensities increase with increasing $I_{ex}$. The enhancement factors (k) of PL increment as a function of $I_{ex}$ are 3.3 and 1.22 at low and high $I_{ex}$ regime, respectively. The high k value at low $I_{ex}$, implies that the activation energy of the SML-QDs is low. The calculated activation energy of the SML-QDs from temperature dependence is 30 meV.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.90-94
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• 2018

The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene, that is observed in pristine graphene indicating intrinsic electron-doping by the substrate, completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases by the presence of manganese atoms, approaching the electron band structure calculated using the local density approximation method. The former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition. The latter suggests that its electronic correlations are efficiently screened, suggesting that the dielectric property of the substrate is modified by manganese atoms and indicating that electronic correlations in grpahene can also be tuned by foreign atoms. These results pave the way for promising device application using graphene that is semiconducting and charge neutral.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.100-104
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• 2018

Herein, we present the behavior of plasma-doped graphene upon high-temperature vacuum annealing. An ammonia plasma-treated graphene sample underwent vacuum annealing for 1 h at temperatures ranging from 100 to $500^{\circ}C$. According to Raman analysis, the structural healing of the plasma-treated sample is more pronounced at elevated annealing temperatures. The crystallite size of the plasma-treated sample increases from 13.87 to 29.15 nm after vacuum annealing. In addition, the doping level by plasma treatment reaches $2.2{\times}10^{12}cm^{-2}$ and maintains a value of $1.6{\times}10^{12}cm^{-2}$, even after annealing at $500^{\circ}C$, indicating high doping stability. A relatively large decrease in the pyrrolic bonding components is observed by X-ray photoelectron spectroscopy as compared to other configurations, such as pyridinic and amino bindings, after the annealing. This study indicates that high-vacuum annealing at elevated temperatures provides a method for the structural reorganization of plasma-treated graphene without a subsequent decrease in doping level.

• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.136-141
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• 2015

We studied the compact anode design to develop 100 kW rotating anode X-ray tube with large focal spot 1.2 mm, small focal spot 0.6 mm and tube voltage 150 kV for large hospital digital radiography using computer thermal simulation. The larger thermal radiation effect in a high vacuum can reduce the temperature of anode so the method to increase the surface area of anode is investigated. The anode has the multi-tier shape at the back side of TZM body of anode and also bigger diameter of anode. The number of multi-tiers was varied from 6 to 15 and the diameter of anode was also varied from ${\Phi}74$ to ${\Phi}82$. From ANSYS transient thermal simulation result, we could obtain $1056.4^{\circ}C$ anode maximum temperature when applying 100 kW input power at 0.1 second on target focal track which is less than $1091^{\circ}C$ of the conventional 75 kW X-ray tube with reduced anode weight by 15.5% than the conventional anode. The compact anode of reduced anode weight is able to improve the unwanted noise when the rotor is rotating at high-speed and also reduce the rotational torque which the cost effective stator-coil is possible. It is believed that the anode with 15 ea multi-tiers using ${\Phi}82$ can satisfy with the specification of the anode heat capacity. From the results of this paper, it has been confirmed that the proposed compact anode can be used as the anode of 100 kW rotating anode X-ray tube for digital radiography.

• Journal of The Korean Association For Science Education
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• v.30 no.4
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• pp.519-531
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• 2010

In this study, we investigated the elementary school students' images of science class and the factors influencing their formations. 280 sixth graders were selected from nine elementary schools in Gyeonggi province and Gangwon province and the DASCT-C (Draw-A-Science-Class-Test Checklist) was administered. In addition, four students were individually interviewed in order to investigate their responses deeply. Analyses of the results revealed that the students' images of science class for four science subjects (physics, chemistry, biology, and earth science) were more 'student-centered' than 'teacher-centered' or 'neutral'. The students of the teacher with student-centered image of science class had also more student-centered images than those with teacher-centered images. Many students answered that the main factors affecting their images of science class were the experiences of impressed or funny science classes, the perceptions of wanted science classes, the active science learning experiences, the educational experiences outside the school curriculum, and the negative science learning experiences. Educational implications of these findings are discussed.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.72-76
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• 2015

Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$ for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below $300^{\circ}C$ had the NiO phase, but, at $400^{\circ}C$, the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below $300^{\circ}C$ were about 3.7 eV, but that at $400^{\circ}C$ should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below $300^{\circ}C$ showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at $400^{\circ}C$ showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.53-59
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• 2015

The field-effect transistors (FETs) with a graphene-based p-n junction channel were fabricated using the patterned self-assembled monolayers (SAMs). The self-assembled 3-aminopropyltriethoxysilane (APTES) monolayer deposited on $SiO_2$/Si substrate was patterned by hydrogen plasma using selective coating poly-methylmethacrylate (PMMA) as mask. The APTES-SAMS on the $SiO_2$ surface were patterned using selective coating of PMMA. The APTES-SAMs of the region uncovered with PMMA was removed by hydrogen plasma. The graphene synthesized by thermal chemical vapor deposition was transferred onto the patterned APTES-SAM/$SiO_2$ substrate. Both p-type and n-type graphene on the patterned SAM/$SiO_2$ substrate were fabricated. The graphene-based p-n junction was studied using Raman spectroscopy and X-ray photoelectron spectroscopy. To implement low voltage operation device, via ionic liquid ($BmimPF_6$) gate dielectric material, graphene-based p-n junction field effect transistors was fabricated, showing two significant separated Dirac points as a signature for formation of a p-n junction in the graphene channel.

• Asian Pacific Journal of Cancer Prevention
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• v.17 no.3
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• pp.1009-1014
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• 2016

It is not clear how gene polymorphisms affecting drugs can contributes totheir efficacy in multiple myeloma (MM). We here aimed to explore associations among gene polymorphisms of tumor necrosis factor alpha (TNFalpha), nitric oxide synthesis 3 (NOS3) and multi-drug resistance 1 (MDR1), clinical parameters, prognosis and survival in MM patients treated with VAD (vincristine-adriamycine-dexamethasone), MP (mephalane-prednisolone), autolougus stem cell transplantation (ASCT), BODEC (bortezomib-dexamethasone-cyclophosphamide) and TD (thalidomide-dexamethasone). We analyzed TNFalpha, NOS 3 and MDR1 in 77 patients with MM and 77 healthy controls. The genotyping was performed with PCR and/or PCR-RFLP. There was no clinically significant difference between MM and control groups when TNFalpha (-238) and (-857) and MDR1 gene polymorphisms were studied. However, the TNFalpha gene polymorphism (-308) GG genotype (p=0.012) and NOS3 (+894) TT genotype (p=0.008) were more common in the MM group compared to healthy controls. NOS3 (VNTR) AA (p=0.007) and NOS3 (+894) GG genotypes (p=0.004) were decreased in the MM group in contrast. In conclusion, the NOS3 (+894) TT and TNFalpha (-308) GG genotypes may have roles in myeloma pathogenesis.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.309-316
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• 2014

A large particle accelerator requires an ultrahigh vacuum (UHV) system of average pressure under $1{\times}10^{-7}$ Pa for mitigating the impact of beam scattering from the residual gas molecules. The surface inside the beam ducts should be controlled with an extremely low thermal outgassing rate under $1{\times}10^{-9}Pa{\cdot}m^3/(s{\cdot}m^2)$ for the sake of the insufficient pumping speed. To fulfil the requirements, the aluminum alloys were adopted as the materials of the beam ducts for large accelerator that thanks to the good features of higher thermal conductivity, non-radioactivity, non-magnetism, precise machining capability, et al. To put the aluminum into the large accelerator vacuum systems, several key technologies have been developed will be introduced. The concepts contain the precise computer numerical control (CNC) machining process for the large aluminum ducts and parts in pure alcohol and in an oil-free environment, surface cleaning with ozonized water, stringent welding process control manually or automatically to form a large sector of aluminum ducts, ex-situ baking process to reach UHV and sealed for transportation and installation, UHV pumping with the sputtering ion pumps and the non-evaporable getters (NEG), et al. The developed UHV technologies have been applied to the 3 GeV Taiwan Photon Source (TPS) and revealed good results as the expectation. The problems of leakage encountered during the assembling were most associated with the vacuum baking which result in the consequent trouble shootings and more times of baking. Then the installation of the well-sealed UHV systems is recommended.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.110-113
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• 2017

The two-dimensional layered $MoS_2$ has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. $MoS_2$ is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-$MoS_2$ and $MoS_2-MoS_2$ heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, $MoS_2$ can easily be exfoliated physically or chemically. During the $MoS_2$ field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-$MoS_2$ gap, and leads to the problem of a rapid decline in the material's yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic $MoS_2$ field effect transistor (FET) was fabricated on a hydrophilic $SiO_2$ substrate via chemical vapor deposition CVD. To solve the problem of $MoS_2$ exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a $MoS_2$ film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.