• Applied Science and Convergence Technology
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• 제24권5호
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• pp.125-131
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• 2015

We investigated the thermal characteristics of rotating anode X-ray tube to develop it for digital radiography by using computer simulation. The target which is the area of the anode struck by electrons is the most important component to get a long life of X-ray tube. So we analyze the thermal characteristics of the target and rotor assembly according to their emissivity by using ANSYS transient thermal simulation and then compare with the measured data of the target temperature operating in aging process of X-ray tube. Especially, keeping the lead coated layer as the role of metal lubricant on ball bearing enables to prevent the noise in rotating anode. The simulation result showed that its temperature was under the melting point of the lead in X-ray tube for digital radiography with 1.2 mm large focal spot 0.6 mm small focal spot and 150 kV tube voltage. We also investigated the relationship between the diameter of the anode shaft and the temperature of the anode and rotor assembly. It has been confirmed that the smaller anode shaft could be good for the rotor thermal characteristics.

• Applied Science and Convergence Technology
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• 제24권5호
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• pp.196-202
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• 2015

Human blood consists of 55% of plasma and 45% of blood cells such as white blood cell (WBC) and red blood cell (RBC). In plasma, there are many kinds of promising biomarkers, which can be used for the diagnosis of various diseases and biological analysis. For diagnostic tools such as a lab-on-a-chip (LOC), blood plasma separation is a fundamental step for accomplishing a high performance in the detection of a disease. Highly efficient separators can increase the sensitivity and selectivity of biosensors and reduce diagnostic time. In order to achieve a higher yield in blood plasma separation, we propose a novel fluid wing structure that is optimized by COMSOL simulations by varying the fluidic channel width and the angle of the bifurcation. The fluid wing structure is inspired by the inertial particle separator system in helicopters where sand particles are prevented from following the air flow to an engine. The structure is ameliorated in order to satisfy biological and fluidic requirements at the micro scale to achieve high plasma yield and separation efficiency. In this study, we fabricated the fluid wing structure for the efficient microfluidic blood plasma separation. The high plasma yield of 67% is achieved with a channel width of $20{\mu}m$ in the fabricated fluidic chip and the result was not affected by the angle of the bifurcation.

• Applied Science and Convergence Technology
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• 제24권4호
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• pp.111-116
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• 2015

The graphene oxide (GO) and graphene oxide quantum dots (GOQDs), which have gained research interest as new types of light-emitting materials, were synthesized by the modified Hummers method for oxidation of graphite flake and graphite nanoparticle. The optical properties of GO and GOQDs have been compared by mean of photoluminescence (PL), PL excitation (PLE), UV-vis absorbance, and time-resolved PL. The GO have an absorption peak at 229 nm and shoulder part at 310 nm, whereas the GOQDs show broad absorption with a gradual change up without any absorption peaks. The PL emission of GOQDs and GO showed the green color at 520 nm and the red color at 690 nm, respectively. The red emission of GO showed faster PL decay time than the green emission of GOQDs. In particular, the temporal PL profile of the GO showed redshift from 560 nm to 660 nm after the pump event.

• Applied Science and Convergence Technology
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• 제24권4호
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• pp.90-95
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• 2015

The adsorption behavior of tris (dimethylamino)-cyclopentadienyl-zirconium (Cp-Zr) precursor using an in-situ attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FT-IR) was studied. In attempt to improve the detection intensity of an adsorbed precursor, nanoparticles were uniformly distributed on the Ge ATR crystal surface employing the spray method. The absorption characteristics studies were carried out over the Ge crystal temperature in the range of $30{\sim}50^{\circ}C$. Upon increasing the temperature, a reduction of absorption was observed. Based on the peak intensities of ATR-FT-IR spectroscopy, higher-$ZrO_2$ absorption efficiency occurs when the nano-particles are utilized compared to pure Ge crystal.

• Applied Science and Convergence Technology
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• 제24권1호
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• pp.22-26
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• 2015

The optical properties of InP/GaP short-period superlattice (SPS) structures grown at various temperatures from $400^{\circ}C$ to $490^{\circ}C$ have been investigated by using temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL measurements. The PL peak energy for SPS samples decreases as the growth temperature increases. The decreased PL energy of ~10 meV for the sample grown at $425^{\circ}C$ compared to that for $400^{\circ}C$-grown sample is due to the CuPt-B type ordering, while the SPS samples grown at $460^{\circ}C$ and $490^{\circ}C$ exhibit the significant reduction of the PL peak energies due to the combined effects of the formation of lateral composition modulation (LCM) and CuPt-B type ordering. The SPS samples with LCM structure show the enhanced carrier lifetime due to the spatial separation of carriers. This study represents that the bandgap energy of InP/GaP SPS structures can be controlled by varying growth temperature, leading to LCM formation and CuPt-B type ordering.

• Applied Science and Convergence Technology
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• 제25권4호
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• pp.81-84
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• 2016

InP/InGaP quantum structures (QSs) grown on GaAs substrates by a migration-enhanced molecular beam epitaxy method were studied as a function of growth temperature (T) using photoluminescence (PL) and emission-wavelength-dependent time-resolved PL (TRPL). The growth T were varied from $440^{\circ}C$ to $520^{\circ}C$ for the formation of InP/InGaP QSs. As growth T increases from $440^{\circ}C$ to $520^{\circ}C$, the PL peak position is blue-shifted, the PL intensity increases except for the sample grown at $520^{\circ}C$, and the PL decay becomes fast at 10 K. Emission-wavelength-dependent TRPL results of all QS samples show that the decay times at 10 K are slightly changed, exhibiting the longest time around at the PL peak, while at high T, the decay times increase rapidly with increasing wavelength, indicating carrier relaxation from smaller QSs to larger QSs via wetting layer/barrier. InP/InGaP QS sample grown at $460^{\circ}C$ shows the strongest PL intensity at 300 K and the longest decay time at 10 K, signifying the optimum growth T of $460^{\circ}C$.

• Applied Science and Convergence Technology
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• 제24권3호
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• pp.67-71
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• 2015

InP/InGaP quantum structures (QSs) were grown on GaAs (001) substrates by a migration-enhanced molecular beam epitaxy method. Temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL (TRPL) were performed to investigate the optical properties of InP/InGaP QSs as a function of migration enhanced epitaxy (MEE) growth cycles from 2 to 8. One cycle for the growth of InP QS consists of 2-s In and 2-s P supply with an interruption time of 10 s after each source supply. As the MEE growth cycle increases from 2 to 8, the PL peak is redshifted and exhibited different (larger, comparable, or smaller) bandgap shrinkages with increasing temperature compared to that of bulk InP. The PL decay becomes faster with increasing MEE cycles while the PL decay time increases with increasing emission wavelength. These PL and TRPL results are attributed to the different QS density and size/shape caused by the MEE repetition cycles. Therefore, the size and density of InP QSs can be controlled by changing the MEE growth cycles.

• Applied Science and Convergence Technology
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• 제25권4호
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• pp.73-76
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• 2016

Multi-layer films of $SiN_x/SiO_x$/InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of $SiN_x/SiO_x$/InSnO was investigated as a function of ratio of $SiN_x$ and $SiO_x$ thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.

• Applied Science and Convergence Technology
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• 제26권3호
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• pp.47-49
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• 2017

Photocurrent enhancement has been investigated in monolayer (1L) $MoS_2$ with PbS quantum dots (QDs). A metal-semiconductor-metal (Au-1L $MoS_2$-Au) junction device is fabricated using a standard photolithography method. Considerably improved photo-electrical properties are obtained by coating PbS QDs on the Au-1L $MoS_2$-Au device. Time dependent photoconductivity and current-voltage characteristics are investigated. For the QDs-coated $MoS_2$ device, it is observed that the photocurrent is considerably enhanced and the decay life time becomes longer. We propose that carriers in QDs are excited and transferred to the $MoS_2$ channel under light illumination, improving the photocurrent of the 1L $MoS_2$ channel. Our experimental findings suggest that two-dimensional layered semiconductor materials combined with QDs could be used as building blocks for highly-sensitive optoelectronic detectors including radiation sensors.

• Applied Science and Convergence Technology
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• 제26권3호
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• pp.52-54
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• 2017

An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.