• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.470-474
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pressure sensors, in which the sensing elements were deposited on SuS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition(300$\^{C}$, 3 hr) in Ar-10%N$_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, ρ=1147.65 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=186ppm/$\^{C}$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20nA and the maximum non-linearity is 0.4%FS and hysteresis is less than 0.2%FS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.737-740
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pessure sensors, which the sensing elements were deposited on SUS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500${\AA}$ and annealing condition(300$^{\circ}C$, 3 hr) in Ar-10 %N$_2$deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20 mA and the maximum non-linearity is 0.4 %FS and hysteresis is less than 0.2 %FS.

• Journal of The Korean Astronomical Society
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• v.33 no.1
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• pp.47-55
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• 2000

Nonpotential characteristics of magnetic fields in AR 5747 are examined using Mees Solar Observatory magnetograms taken on Oct. 20, 1989 to Oct. 22, 1989. The active region showed such violent flaring activities during the observational span that strong X-ray flares took place including a 2B/X3 flare. The magnetogram data were obtained by the Haleakala Stokes Polarimeter which provides simultaneous Stokes profiles of the Fe I doublet 6301.5 and 6302.5. A nonlinear least square method was adopted to derive the magnetic field vectors from the observed Stokes profiles and a multi-step ambiguity solution method was employed to resolve the $180^{\circ}$ ambiguity. From the ambiguity-resolved vector magnetograms, we have derived a set of physical quantities characterizing the field configuration, which are magnetic flux, vertical current density, magnetic shear angle, angular shear, magnetic free energy density, a measure of magnetic field discontinuity MAD and linear force-free coefficient. Our results show that (1) magnetic nonpotentiality is concentrated near the inversion line in the flaring sites, (2) all the physical parameters decreased with time, which may imply that the active region was in a relaxation stage of its evolution, (3) 2-D MAD has similar patterns with other nonpotential parameters, demonstrating that it can be utilized as an useful parameter of flare producing active region, and (4) the linear force-free coefficient could be a evolutionary indicator with a merit as a global nonpotential parameter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.573-576
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromium nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5∼25 %)Na$_2$). The deposited CrN thin-films with thickness of 3577${\AA}$ and annealing conditions(300$^{\circ}C$, 48 hr) in Ar-10 % N$_2$deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.267-267
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• 2012

최근 국내 반도체 장비 업체들에 의해서 차세대 반도체용 450 mm 웨이퍼 공정용 장비 개발이 진행 중에 있다. 반도체 산업은 계속해서 반도체 칩의 크기를 작게 하고, 웨이퍼 크기를 늘리면서 웨이퍼 당 칩수를 증가시켜 생산성을 향상해오고 있다. 현재 300 mm 웨이퍼에서 450 mm 웨이퍼를 도입하게 되면, 생산성 뿐만 아니라 30%의 비용절감과 50%의 cycle-time 단축이 기대되고 있다. 장비에 대한 이해와 공정에 대한 해석 능력을 위해 비용과 시간이 많이 들기 때문에 최근 컴퓨터를 활용한 수치 모델링이 진행되고 있다. 또한, 수치 모델링은 실험 결과와의 비교가 필수적이다. 본 연구에서는 450 mm 웨이퍼 공정용 장비의 전자밀도를 cut off probe를 통해 100 mTorr에 서 Ar 플라즈마를 파워에 따라 측정했다. 13.56 MHz 200 W, 500 W, 1,000 W로 입력 파워가 증가하면서 웨이퍼 중심에서 $6.0{\times}10^9#/cm^3$, $1.35{\times}10^{10}#/cm^3$, $2.4{\times}10^{10}#/cm^3$로 증가했다. 450 mm 웨이퍼 영역에서 전자 밀도의 불균일도는 각각 10.31%, 3.24%, 4.81% 였다. 또한, 이 450 mm 웨이퍼용 CCP 장비를 축대칭 2차원으로 형상화하고, 전극에 13.56 MHz를 직렬로 연결된 blocking capacitor ($1{\times}10^{-6}$ F/$m^2$)를 통해 인가할 수 있도록 상용 유체 모델 소프트웨어(CFD-ACE+, EXI corp)를 이용하여 계산하였다. 주요 전자-중성 충돌 반응으로 momentum transfer, ionization, excitation, two-step ionization을 고려했고, $Ar^+$와 $Ar^*$의 표면 재결합 반응은 sticking coefficient를 1로 가정했다. CFD-ACE+의 CCP 모델을 통해 Poisson 방정식을 풀어서 sheath와 wave effect를 고려하였다. Stochastic heating을 고려하지 않았을 때, 플라즈마 흡수 파워가 80 W, 160 W, 240 W에서 실험 투입 전력 200 W, 500 W, 1,000 W일 때와 유사한 반경 방향의 플라즈마 밀도 분포를 보였다. 200 W, 500 W, 1,000 W일 때의 전자밀도 분포는 수치 모델링과 전 범위에서 각각 10%, 3%, 2%의 오차를 보였다. 450 mm의 전극에 13.56 MHz의 전력을 인가할 때, 파워가 증가할수록 전자밀도의 최대값의 위치가 웨이퍼 edge에서 중심으로 이동하고 있음을 실험과 모델링을 통해 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric $YMnO_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of $YMnO_3$ thin film is $300{\AA}/min$ at $Ar/Cl_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, YFx compounds were found on the surface of $YMnO_3$ thin film which is etched in $Ar/Cl/CF_{4}$ plasma. The etch profile of $YMnO_3$ film is improved by addition of $CF_4$ gas into the $Ar/Cl_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.

• Journal of the Korean Statistical Society
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• v.23 no.1
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• pp.167-178
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• 1994

To estimate coefficient matrix in autoregressive model, usually ordinary least squares estimator or unconditional maximum likelihood estimator is used. It is unknown that for univariate AR(p) model, unconditional maximum likelihood estimator gives better power property that ordinary least squares estimator in testing for unit root with mean estimated. When autoregressive model contains multiple unit roots and unconditional likelihood function is used to estimate coefficient matrix, the seperation of nonstationary part and stationary part of the eigen-values in the estimated coefficient matrix in the limit is developed. This asymptotic property may give an idea to test for multiple unit roots.

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.74-82
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• 1996

Fe-Si based powders prepare by melting the metals in the composition of FeSi2,.Fe0.95Mn0.05Si2 and Fe0.95Co0.05Si0.2 were used as the starting materials together with a commercial FeSi2 powder to study the effect of oxidation on their thermoelectric properties. The powders were heated at 650~80$0^{\circ}C$ in dired air before forming and sintering at 1190 and 120$0^{\circ}C$ in Ar+7%H2. The microstructure and phases of the annealed specimens were observed using the optical microscopty SEM, EDS and XRD. The thermoelectric properties of the specimens were also measured. The temperature at which Seebe다 coefficient showed the maximum value increased with the degree of oxidation. Electrical conductivity showed a tendency to decrease in the oxidized samples regardless of their compositions. Seebeck coefficient of the specimen showed almost the same value even after oxidation which may be explained by the formation of the discontinuous second phases from impurities in the oxidized specimens.

• Journal of the Korean Society for Heat Treatment
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• v.27 no.2
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• pp.65-71
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• 2014

SMF9060 material is a Fe-based powder sintered alloy that is used for several automobile components such as Synchronize Hub, oil pump and transmission. These components are required excellent wear resistance and durability. In this study, we have performed a dry wear test at the ambient air and Ar gas conditions in the room temperature, and a lubricant wear test at the room temperature and engine oil temperature of $100^{\circ}C$. The amount of wear volume and coefficient friction are measured by a Profilometer and a Ball on disk type wear tester. The wear volume in Ar gas condition was a little higher than that in the ambient air condition. However the wear volume in the lubricant wear condition was much lower than in the dry wear condition. XRD analysis of the debris in Ar gas condition showed that the oxide film was not formed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.314-318
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• 2002

The etching behaviors of the ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). The maximum etch rate of $YMnO_3$ thin film is 300 ${\AA}/min$ at Ar/$Cl_2$of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, nonvolatile $YF_x$ compounds were found on the surface of $YMnO_3$ thin film which is etched in Ar/$Cl_2$/CF$_4$plasma. The etch profile of YMnO$_3$film is improved by addition of $CF_4$ gas into the Ar/$Cl_2$ plasma. These results suggest that YF$_{x}$ compound acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.