• Title/Summary/Keyword: AR coefficient

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A Study on the Unit Hydrograph Derivation by the Triangular Form (삼각도형에 의한 단위도의 유도에 관한 연구)

  • Yun, Hak-Gi;Kim, Si-Won;Seo, Seung-Deok
    • Magazine of the Korean Society of Agricultural Engineers
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    • v.19 no.2
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    • pp.4377-4384
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    • 1977
  • The curvilinear hydrograph can be replaced by an equivalent triangular hydrograph which is more easily constructed and, for routing through reservoirs or stream channels, gives results about as accurate as those obtained using the curvilinear hydrograph. A synthetic hydrograph is prepared using the data from a number of watersheds to develop a dimensionless unit hydrograph applicable to ungauged watersheds. The dimensionless unit hydrograph for the NakDong River Basin was prepared from the unit hydrographs of a variety of nine subwatersheds. The equation for the peak rate of flow (unit volume of runoff in 1.0mm) was derived as {{{{ { q}_{p } = { 0.21AR} over { {T }_{p } } }}}} The results summarized in this study are as follows: 1) It found that the watershed lag time (Lg, hrs) could be expressed by Lg=0.253(L.Lca)0.4171 The product L.Lca is a measure of the size and shape of the watershed. Correlation coefficient for Lg was 0.97 which defined with high significance. 2) The base length of the unitgraph, in hours, was adopted as Tb=17.51+2.073Lg with high significant correlation coefficient, 0.92. 3) Time in hour from start of rise to peak rate (TP) generally occured at the position of 0.289 Tb with some indication of higher values for larger watershed. 4) Triangular hydrograph is a dimensionless unitgraph prepared from the 40 unitgraphs. The equation is shown as {{{{ { q}_{p } = { K.A.R} over { { T}_{p } } }}}}. The constant K=0.21 is defined to NakDong River basin. 5) In the light of the results analyzed in this study, average errors in the peak discharge of the Trjangular unitgraph was estimated as 5.34 percent to the peak of observed average unitgraph. Each ordinate of the Triangular unitgraph was approached closely to the observed one.

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Effect of Seed-layer on the Crystallization and Electric Properties of SBN60 Thin Films (SBN60 박막의 결정화 및 전기적 특성에 관한 씨앗층의 영향)

  • Jang, Jae-Hoon;Lee, Dong-Gun;Lee, Hee-Young;Jo, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.08a
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    • pp.85-88
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    • 2003
  • $Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.

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A study on the properties of Cu$_2$ZnSnS$_4$ thin films prepared by rf magnetron sputtering process (RF Magnetron Sputtering법으로 제조한 Cu$_2$ZnSnS$_4$박막 특성에 관한 연구)

  • 이재춘;설재승;남효덕;배인호;김규호
    • Journal of Surface Science and Engineering
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    • v.35 no.1
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    • pp.39-46
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    • 2002
  • $Cu_2$$ZnSnS_4$(CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. Thin films were deposited on ITO glass substrates using a compact target which were made by $Cu_2$S, ZnS, SnS$_2$ powder at room temperature by rf magnetron sputtering and were annealed in the atmosphere of Ar and $S_2$(g). We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2$$ZnSnS_4$ composition. Structure was coarsened with increasing temperature and (112), (200), (220), (312) planes appeared to conform to all the reflection Kesterite structure. A (112) preferred orientation was advanced with increasing the annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.51 to 1.8eV as the annealing temperature increased. The optical absorption coefficient of the thin film was about $10^4$$cm^{-1}$.

Direct Determination Method of Antimony in High Purity Copper Metal by Graphite Furnace Atomic Absorption Spectrometry (흑연로 원자 흡수흡광법에 의한 고순도 구리 합금중의 안티몬의 직접 분석 방법)

  • Yoo, K.S;Kyung, J.D;Kwon, J.G;Lee, J.J
    • Journal of the Korean Chemical Society
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    • v.39 no.4
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    • pp.252-256
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    • 1995
  • A study was carried out for the development of direct determination of antimony in high purity copper metal without preseparation. The large excess of copper seemed to be performed as the matrix modifier to enhance the absorbance of antimony in copper metal. Sensitivity enhancement of Sb was obtained at the condition of the ashing temperature of $600^{\circ}C(20s){\sim}700^{\circ}C(10s)$ rather than $1000^{\circ}C(20s){\sim}1100^{\circ}C(10s)$, and the atomization temperature of $2200^{\circ}C.$ The operating pressure of argon gas was readjusted to the optimum condition at 2.0 kg/$cm^2.$ The linearity of the Sb calibration graph could be obtained in the range of 20 ppb up to 200 ppb Sb in existence of 5,000 ppm Cu with the coefficient of variation of about 5%.

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Effect of Seed-layer thickness on the Crystallization and Electric Properties of SBN Thin Films. (SBN 박막의 결정화 및 전기적 특성에 관한 씨앗층 두께의 영향)

  • Jang, Jae-Hoon;Lee, Dong-Gun;Lee, Hee-Young;Cho, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.271-274
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    • 2003
  • [ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

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Accessing socio-economic and climate change impacts on surface water availability in Upper Indus Basin, Pakistan with using WEAP model.

  • Mehboob, Muhammad Shafqat;Kim, Yeonjoo
    • Proceedings of the Korea Water Resources Association Conference
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    • 2019.05a
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    • pp.407-407
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    • 2019
  • According to Asian Development Bank report Pakistan is among water scarce countries. Climate scenario on the basis IPCC fifth assessment report (AR5) revealed that annual mean temperature of Pakistan from year 2010-2019 was $17C^o$ which will rise up to $21C^o$ at the end of this century, similarly almost 10% decrease of annual rainfall is expected at the end of the century. It is a changing task in underdeveloped countries like Pakistan to meet the water demands of rapidly increasing population in a changing climate. While many studies have tackled scarcity and stream flow forecasting of the Upper Indus Basin (UIB) Pakistan, very few of them are related to socio-economic and climate change impact on sustainable water management of UIB. This study investigates the pattern of current and future surface water availability for various demand sites (e.g. domestic, agriculture and industrial) under different socio-economic and climate change scenarios in Upper Indus Basin (UIB) Pakistan for a period of 2010 to 2050. A state-of-the-art planning tool Water Evaluation and Planning (WEAP) is used to analyze the dynamics of current and future water demand. The stream flow data of five sub catchment (Astore, Gilgit, Hunza, Shigar and Shoyke) and entire UIB were calibrated and validated for the year of 2006 to 2011 using WEAP. The Nash Sutcliffe coefficient and coefficient of determination is achieved ranging from 0.63 to 0.92. The results indicate that unmet water demand is likely to increase severe threshold and the external driving forces e.g. socio-economic and climate change will create a gap between supply and demand of water.

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Measurement of Condensation and Boiling Heat Transfer Coefficients of Non-flammable Mixed Refrigerant for Design of Cryogenic Cooling System for Semiconductor Etching Process (반도체 식각 공정용 초저온 냉각 시스템 설계를 위한 비가연성 혼합냉매 응축 및 비등 열전달 계수 측정)

  • Cheonkyu Lee;Jung-Gil Lee
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.3
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    • pp.119-124
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    • 2023
  • In this study, experimental approach of the measurement of condensation and evaporation heat transfer coefficients is discussed for mixed refrigerants using in the ultra low-temperature cooling system for semiconductor etching process. An experimental apparatus was described performing the condensation and evaporation heat transfer measurements for mixed refrigerants. The mixed refrigerant used in this study was composed of the optimal mixture determined in previous research, with a composition of Ar:R14:R23:R218 = 0.15:0.4:0.15:0.3. The experiments were conducted over a temperature range from -82℃ to 15℃ and at pressures ranging from 18.5 bar to 5 bar. The convection heat transfer coefficients of the mixed refrigerant were measured at flow rates corresponding to actual operating conditions. The condensation heat transfer coefficient ranged from approximately 0.7 to 0.9 kW/m2K, while the evaporation heat transfer coefficient ranged from 1.0 to 1.7 kW/m2K. The detailed discussion of the experimental methods, procedures, and results were described in this paper.

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Effect of Oxygen on the Microstructure and Mechanical Properties of Cr-O-N Coatings (Oxygen 함량에 따른 Cr-O-N 코팅막의 미세구조 및 기계적 특성에 관한 연구)

  • Yun, Jun-Seo;Kwon, Se-Hun;Park, In-Wook;Lee, Jeong-Du;Kim, Kwang-Ho
    • Journal of Surface Science and Engineering
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    • v.42 no.5
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    • pp.220-226
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    • 2009
  • Cr-O-N coatings having different oxygen contents were deposited on Si wafer and SUS 304 substrates by an arc ion plating technique using Cr target in $Ar/O_2/N_2$ gaseous atmosphere. As increasing oxygen content in the coating, the microstructure of Cr-O-N coating changed from polycrystalline having NaCl structure to amorphous structure. Further increase of oxygen content resulted in phase transformation from amorphous to rhombohedral structure. From the variations of d value and average grain size, it was revealed that the maximum solubility of oxygen in Cr-O-N coating was about 21 at.%. And the maximum micro-hardness of 2751HK was obtained in this composition. The lowest friction coefficient was measured in the coating having 34.8 at.% of oxygen. However, more narrow width of wear track was found in the coating having 30.1 at.% of oxygen.

Selenization of CIG Precursors Using RTP Method with Se Cracker Cell

  • Kang, Young-Jin;Song, Hye-Jin;Cho, You-Suk;Yoon, Jong-Man;Jung, Yong-Deuk;Cho, Dea-Hyung;Kim, Ju-Hee;Park, Su-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.426-426
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    • 2012
  • The CIGS absorber has outstanding advantages in the absorption coefficient and conversation efficiency. The CIGS thin film solar cells have been researched for commercialization and increasing the conversion efficiency. CIG precursors were deposited on the Mo coated glass substrate by magnetron sputtering with multilayer structure, which is CuIn/CuGa/CuIn/CuGa. Then, the metallic precursors were selenized under high Se pressure by RTP method which included. Se vapor was supplied using Se cracker cell instead of toxic hydrogen selenide gas. Se beam flux was controlled by variable reservoir zone (R-zone) temperature during selenization process. Cracked Se source reacted with CIG precursors in a small quantity of Se because of small size molecules with high activation energy. The CIGS thin films were studied by FESEM, EDX, and XRD. The CIGS solar cell was also developed by layering of CdS and ZnO layers. And the conversion efficiency of the CIGS solar cell was characterization. It was reached at 6.99% without AR layer.

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Influence of thermo-physical properties on solutal convection by physical vapor transport of Hg2Cl2-N2 system: Part I - solutal convection

  • Kim, Geug-Tae;Kim, Young-Joo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.3
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    • pp.125-132
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    • 2010
  • For typical governing dimensionless parameters of Ar = 5, Pr = 1.16, Le = 0.14, Pe = 3.57, Cv = 1.02, $Gr_s=2.65{\times}10^6$, the effects of thermo physical properties such as a molecular weight, a binary diffusivity coefficient, a partial pressure of component B on solutally buoyancy-driven convection (solutal Grashof number $Gr_s=2.65{\times}10^6$) are theoretically investigated for further understanding and insight into an essence of solutal convection occurring in the vapor phase during the physical vapor transport of a $Hg_2Cl_2-N_2$ system. The solutally buoyancy-driven convection is significantly affected by any significant disparity in the molecular weight of the crystal components and the impurity gas of nitrogen. The solutal convection in a vertical orientation is found to be more suppressed than a tenth reduction of gravitational accelerations in a horizontal orientation. For crystal growth parameters under consideration, the greater uniformity in the growth rate is obtained for either solutal convection mode in a vertical orientation or thermal convection mode in horizontal geometry. The growth rate is also found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.