• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.21 no.11
• /
• pp.1965-1971
• /
• 1997

The relaxation of stress concentration in notched members can be very significant in the improvement of notched strength and fatigue life. This paper investigated the relationship of stress concentration factor, and notched strength and fatigue life. The stress concentration factors were analyzed by FEM. Uniaxial tensile and fatigue tests were carried on plain woven composite specimens which have a main hole and two defence holes. From experimental results, the notched strength and the fatigue limit increased up to about 50% and 30% respectively due to the reduction in stress concentration. The fatigue lives predicted by Juvinall's approach were underestimated than test results and this trends were remarkable as nothed strength increased. This is because of the underestimation of a coefficient. A in S-N curve (.sigma.$_{ar}$ =A $N_{f}$ $^{B}$). Therefore, considering notched strength the coefficient A was modified. The fatigue lives by this process were agreed well with the experimental results.sults.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.339-339
• /
• 2013

We study on the optical and electrical properties of indium-free ZTO(ZnSnO)/Ag/ZTO (ZAZ) multilayer electrodes for the low-cost transparent electrode. In the first step, each single layer was deposited using rf magnetron in-line sputter with various working pressure based on $O_2$/$Ar+O_2$ ratio (0~3%) and power at room temperature. Secondly, we studied the optical and electrical properties by analyzing the refractive index, extinction coefficient, transmittance and resistivity of each layer. Finally, we optimized the thickness of each layer using macleod simulation program based on the analyzed optical properties and fabricated the multilayer electrode. As a result, We achieved a low sheet resistance of $11{\Omega}$/sq and anaverage transmittance of 80% in the visible region of light (380~780 nm). This indicates that indium-free ZAZ multilayer electrode is a promising low-cost and low-temperature processing electrode scheme.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.97-100
• /
• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16%)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vaccum furnace range $500\sim1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho=768.93$ ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• The Korean Journal of Applied Statistics
• /
• v.20 no.1
• /
• pp.103-115
• /
• 2007

In this paper we studied the small sample asymptotic inference for the autoregressive coefficient in AR(1) model. Based on saddlepoint approximations to the distribution of quadratic forms, we suggest a new approximation to the distribution of the estimators of the noncircular autoregressive coefficients. Simulation results show that the suggested methods are very accurate even in the small sample sizes and extreme tail area.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2003.11a
• /
• pp.360-367
• /
• 2003

Diamond-like carbon(DLC) films are considerable research interest because of their widespread applications as protective coatings in areas such as optical windows, magnetic storage disks, car parts, biomedical coatings and as micro-electromechanical devices(MEMs). DLC films were deposited on WC-Co by PECVD using Ar, $C_2H_4$ gas. Tribological tests were conducted using a ball-on-disk type tribometer in dry air. Three kinds of counter-bodies balls were used. The counter-bodies balls are SM45C, SUJ2 and $ZrO_2$(3.17mm in diameter). Wear rate of the samples were calculated after measuring the worn-out volume of the wear track. As results wear test, the higher hardness of counter-bodies, friction coefficient low. As result of XPS estimation, wear debris generated as an oxide lower the friction coefficient.

• Proceedings of the KIEE Conference
• /
• 1997.07e
• /
• pp.1752-1754
• /
• 1997

The Kaufman type ion beam source with focusing lens was prepared to measure $\gamma$-coefficient of MgO thin film. Initial discharge of the system was started with the discharge voltage of 25V, the cathode filament current of 5.5A at the constant magnetic field of 150G. The system shows the maximum ion current density of $120{\mu}A/cm^2$, energy dispersion of 200eV and beam divergence of $30^{\circ}$ under the condition of Ar gas pressure $2.5{\times}10^{-4}Torr$, the beam voltage of 500V, the discharge voltage of 90V, the accelerator voltage of -200V and the cathode filament current of 6.1A. When the focusing lens was installed onto the ion beam source, the spreadness diameter of ion beam was about 10mm.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.3 no.4
• /
• pp.23-27
• /
• 2010

This paper performs emotion classification test to find out the best parameter of electroencyphalogram(EEG) signal. Linear predictor coefficients, band cross-correlation coefficients of fast Fourier transform(FFT) and autoregressive model spectra are used as the parameters of 10-channel EEG signal. A multi-layer neural network is used as the pattern classifier. Four emotions for relaxation, joy, sadness, irritation are induced by four university students of an acting circle. Electrode positions are Fp1, Fp2, F3, F4, T3, T4, P3, P4, O1, O2. As a result, the Linear predictor coefficients showed the best performance.

• Korean Journal of Metals and Materials
• /
• v.50 no.11
• /
• pp.839-845
• /
• 2012

The effect of an AlN additive on the thermoelectric properties of SiC ceramics was studied. Porous SiC ceramics with 48-54% relative density were fabricated by sintering the pressed ${\alpha}-SiC$ powder compacts with AlN at $2100-2200^{\circ}C$ for 3 h in an Ar atmosphere. In the undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder. With AlN addition, the reverse phase transformation of 6H-SiC to 4H-SiC was observed during the sintering process. The electrical conductivity of the AlN doped specimen was larger than that of the undoped specimen under the same conditions, which might be due to a reverse phase trans-formation. The Seebeck coefficient of the AlN doped specimen was also larger than that of the undoped specimen. The density of specimen and the amount of addition had significant effects on the thermoelectric properties.

• Korean Journal of Soil Science and Fertilizer
• /
• v.16 no.1
• /
• pp.42-49
• /
• 1983

In order to find out the possibility of predicting fertilizer K requirement from the K supplying capacity of soil, the relative K activity ratio, Kas/kai, the potential buffering capacity of $K^+$ ($PBC^k$ ; the liner regression coefficient) and its activity ratio ($AR^k_o$ ; $^{k+}$/${\sqrt{Ca^{+2}+Mg^{+2}}}$ in mol/l) at ${\delta}K$ = O, in the Q/I relationships of Beckett(1964), were determined for the soils before flooding and the samples taken at heading stage of transplanted rice in pot experiment. These parameters assumed as the K supplying capacity of soils were subjected for the investigation through correlation stady between themselves and other factors such as grain yield or the amounts of $K_2O$ uptake by rice plant at harvest. The results may be summarized as follows; 1. The potassium supplying power of the flooded soil was considered to be ruled by the amounts of exchangeable K before flooding, since there was little change in exchangeable K concentration from no-exchangeable K during the incubation periods of 67 days. 2. The $PBC^k$ values, in soils before flooding were 0.027, 0.014 and 0.009, where as the $AR^k_o{\times}10^{-3}$ values were 9.1, 7.6, and 15.4, respectively, in clay, loamy and sandy loam soils. 3. The $PBC^k$ values, determined in the soil samples taken at heading stage, varied little compared with the values of orignal soil, regardless of those different fertilizer treatments and textures, showing the possibility of using them as a factor for the improvement of soil to increase the efficiency of fertilizer K. 4. The significant yield responses to potassium fertilizer application were observed wherever the $AR^k_o$ values in soil at heading stage drop down to the original $AR^k_o$ values, regardless of any levels of fertilizer application. 5. The higher correlations between the gain yield or the amounts of $K_2O$ uptake and by the use of both soil factors of $PBC^k$ and $AR^k_o$ at heading stage were observed compared with the use of any single factor. 6. The Kas/Kai value in the soil, estimated prior to the experiment, had high possitive correlation with the $AR^k_o$ determined in the soil at heading stage and could be used as a soil factor for predicting potassium fertilizer requirement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.145-145
• /
• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).