• Proceedings of the KSME Conference
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• 2003.11a
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• pp.622-627
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• 2003

A numerical study is made of a flow in a cylinder with a rotating grooved endwall disk. The aim is to describe differences in the flow fields when there is concentrically-grooved obstacle characterized by amplitude(a) and wave number(N). The Reynolds number(Re) is varied from $10^{3}$ to $10^{4}$ and the aspect ratio(Ar) fixed to 1.0 for the most part of the simulation. For the various cases of amplitude(a) and wave number(N), numerical results are acquired. As the endwall groove roughness increases until certain limit, the interior azimuthal velocity component(v) increases drastically. But over the limit, the swirl motion chararcterized by velocity v decreases and finally it approaches much alike Ar=1.0-a case. The reason of activating swirl motion is based on increasing of torque transported by endwall disk. Torque coefficients($C_{T}$) are aquired for the various (a,N,Re) combinations and the limiting phenomena of swirl motion activation is explained.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.959-961
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• 1999

ZnO thin films are deposited by using an RF magnetron sputtering system. Structural and electrical properties are analyzed as a function of deposition conditions, such as RF power, Ar/($Ar+O_2$) ratio, and substrate temperature. The c-axial growth of ZnO is observed to be preferable to the $SiO_2$/Si substrate, rather than the Si substrate. By adding the oxygen gas during deposition, the electrical resistivity of films is increased, but the c-axial growth is inhibited. A pizoelectric resonator of Al/ZnO/Al is also fabricated to estimate the electric-mechanical coupling coefficient($k^2$) of ZnO film. The value of $k^2$ obtained from our work is about 10.14 %.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.219-226
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• 2000

Amorphous Ge20As20Se60 chalcogenide thin films were prepared by spin coating technique from mixed solutions of As40Se60 and Ge40Se60 dissolved in ethylenediamine. Films were prepared at a roating speed of 3500 rpm and spinning time was 10 second and heat-treateed at 27$0^{\circ}C$ for 1 hour. The resulting film thickness and RMS roughness were approximately 340 nm and 15$\AA$. Photostructure changes were investigated with 514.5nm Ar+ laser irradiation and heat-treatment. After Ar+ laser irradiation, transmittance and transmission efficiency decreased respectively up to 24.9% at 2.43 eV and 67.5% at 3.27 eV, and absorption edge shifted toward long wavelength. Optical bandgap changed from 2.03 to 1.83 eV, and absoprtion coefficient and absorption efficiency increased up to 0.33$\times$105cm-1 at 3.37eV and 88.3% at 1.31 eV, respectively. These photodarkening state were recovered reversibly by heat-treatment at 27$0^{\circ}C$ for 1 hour. Photodarkening and thermal bleaching effects by laser irradiation and heat-treatment revealed reversible amorphous-to-amorphous transition varying only coordination number.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1855-1862
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• 2018

A reliable set of low-energy electron collision cross sections for the triethoxysilane (TRIES) molecule was derived based on the measured electron transport coefficients for a pure TRIES molecule by using an electron swarm method and a two-term approximation of the Boltzmann equation. The electron transport coefficients calculated using the derived set are in good agreement with experimental value over a wide range of E/N values (ratio of the electric field E to the neutral number density N). The present electron collision cross section set for the TRIES molecule, therefore, is the most reliable so far for plasma discharges and for materials processing using the TRIES molecule. Moreover, the electron transport coefficients for the TRIES-Ar and the $TRIES-O_2$ mixtures were also calculated and analyzed over a wide range of E/N for the first time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

• Journal of Powder Materials
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• v.24 no.5
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• pp.357-363
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• 2017

In this study, Bi-Sb-Te thermoelectric materials are produced by mechanical alloying (MA) and spark plasma sintering (SPS). To examine the influence of the milling atmosphere on the microstructure and thermo-electric (TE) properties, a p-type Bi-Sb-Te composite powder is mechanically alloyed in the presence of argon and air atmospheres. The oxygen content increases to 55% when the powder is milled in the air atmosphere, compared with argon. All grains are similar in size and uniformly, distributed in both atmospheric sintered samples. The Seebeck coefficient is higher, while the electrical conductivity is lower in the MA (Air) sample due to a low carrier concentration compared to the MA (Ar) sintered sample. The maximum figure of merit (ZT) is 0.91 and 0.82 at 350 K for the MA (Ar) and MA (Air) sintered samples, respectively. The slight enhancement in the ZT value is due to the decrease in the oxygen content during the MA (Ar) process. Moreover, the combination of mechanical alloying and SPS process shows a higher hardness and density values for the sintered samples.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.12C
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• pp.1173-1183
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• 2006

In this paper, we propose an efficient method for improving visual quality of AR-FGS (Adaptive Reference FGS) which is adopted as a key scheme for SVC (Scalable Video Coding) or H.264 scalable extension. The standard FGS (Fine Granularity Scalability) adopts AR-FGS that introduces temporal prediction into FGS layer by using a high quality reference signal which is constructed by the weighted average between the base layer reconstructed imageand enhancement reference to improve the coding efficiency in the FGS layer. However, when the enhancement stream is truncated at certain bitstream position in transmission, the rest of the data of the FGS layer will not be available at the FGS decoder. Thus the most noticeable problem of using the enhancement layer in prediction is the degraded visual quality caused by drifting because of the mismatch between the reference frame used by the FGS encoder and that by the decoder. To solve this problem, we exploit the principle of cyclical block coding that is used to encode quantized transform coefficients in a cyclical manner in the FGS layer. Encoding block coefficients in a cyclical manner places 'higher-value' bits earlier in the bitstream. The quantized transform coefficients included in the ealry coding cycle of cyclical block coding have higher probability to be correctly received and decoded than the others included in the later cycle of the cyclical block coding. Therefore, we can minimize visual quality degradation caused by bitstream truncation by adjusting weighting factor to control the contribution of the bitstream produced in each coding cycle of cyclical block coding when constructing the enhancement layer reference frame. It is shown by simulations that the improved AR-FGS scheme outperforms the standard AR-FGS by about 1 dB in maximum in the reconstructed visual quality.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.3
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• pp.13-19
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• 2021

This study examined the effects of stacking faults on the thermoelectric properties for n-type SiC semiconductors. Porous SiC semiconductors with 30~42 % porosity were fabricated by the heat treatment of pressed ��-SiC powder compacts at 1600~2100 ℃ for 20~120 min in an N2 atmosphere. XRD was performed to examine the stacking faults, lattice strain, and precise lattice parameters of the specimens. The porosity and surface area were analyzed, and SEM, TEM, and HRTEM were carried out to examine the microstructure. The electrical conductivity and the Seebeck coefficient were measured at 550~900 ℃ in an Ar atmosphere. The electrical conductivity increased with increasing heat treatment temperature and time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The Seebeck coefficients were negative due to nitrogen behaving as a donor, and their absolute values also increased with increasing heat treatment temperature and time. This might be due to a decrease in stacking fault density, i.e., a decrease in stacking fault density accompanied by grain growth and crystallite growth must have increased the phonon mean free path, enhancing the phonon-drag effect, leading to a larger Seebeck coefficient.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.653-657
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• 2004

The average bit error rate (HER) performance of a Gray coded arbitrary rectangular quadrature amplitude modulation (AR-QAM) signal with maximal ratio combining (MRC) diversity in an arbitrarily correlated Nakagami-m fading channel is derived and analyzed. The derived two types of general solutions are a simple closed-form and an integral form, depending on the types of the values (integer and non-integer) of the fading parameter. Using the derived equations in this paper, we analyzed the HER performances numerically based on the practical base station antenna configuration. The results show that MRC reception is a very effective scheme so far even though the combined signals are not independent each other because of the correlation values. The antenna height and separation of the MRC system relate to the correlation coefficient value between antennas, and go a long way with the diversity advantage. In particular, it is needed to be determined the antenna height that is carefully do for the diversity advantage because the correlation coefficient and the antenna height gain are contrary to each other from the aspect of the system performance. The expressions presented here can offer a convenient way to evaluate the exact HER performance of an arbitrary rectangular QAM signal with MRC diversity reception for various cases of practical interest on a correlated Nakagami fading channel.

• Journal of Institute of Convergence Technology
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• v.5 no.2
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• pp.27-32
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• 2015

Air intakes are an essential component of aircraft engines. They are mainly used to offer uniform airflows to engine faces. Fighter aircraft have to mask the engine face inside the fuselage in order to reduce the Radar Cross Section(RCS). Therefore, offset intakes like a S-Duct are one of promising components for this purpose. During a fight, it is unavoidable that the flow will enter the intakes at some face angles other than zero. In this case, the performance of the aircraft engine will be influenced to the angle of incidence. In this study, the CFD analysis of the semi-circular S-Duct with AR(0.5,0) is performed to investigate the influence of the angle of incidence on the performance of the S-Duct using a distortion coefficient. To consider the adverse pressure gradient, a $k-{\omega}$ SST turbulence model is employed. The secondary flow and flow separation are observed for all computational cases. It is found that the positive incidence angle produces the best performances.