• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.

• Journal of the Korean Society of Industry Convergence
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• v.21 no.5
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• pp.235-240
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• 2018

The generator of an automobile supplies electric voltage and current for various electric components. The supplied voltage can be changed by sudden variation of the electric load. The voltage was controlled by independent power supply in the study. The TPS and APS signal was changes as the voltage of the power supply. The ECU output voltage and OBD signal voltage was changed also as the variance of the power supply.

• The Optical Journal
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• v.8 no.2 s.42
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• pp.69-70
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• 1996

• JOURNAL OF ELECTRICAL WORLD
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• s.378
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• pp.15-24
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• 2008

• Archives of Plastic Surgery
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• v.49 no.1
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• pp.1-2
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• 2022

• Information Display
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• v.24 no.2
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• pp.51-56
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• 2023

• Membrane Journal
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• v.23 no.6
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• pp.469-474
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• 2013

An anion exchange membrane was prepared for a separator in the alkaline water electrolysis. An anion exchange membrane was prepared by the chloromethylation and amination of polyvinyl chloride (PVC) used as a base polymer. The membrane properties of the prepared anion exchange membrane such as the membrane resistance and ion exchange capacity were measured. The minimum membrane resistance of the prepared anion exchange membrane was $2.9{\Omega}{\cdot}cm^2$ in 1M NaOH aq. solution. This membrane had 2.17 meq./g-dry-membrane and 43.4% for the ion exchange capacity and water content, respectively. The membrane properties of the prepared anion exchange membrane was compared with that of the commercial anion exchange membrane. The membrane resistance decreased in the order; AHT>IOMAC> Homemade membrane> AHA>APS=AFN. The ion exchange capacity decreased in the order; Homemade membrane>AFN>APS>AHT>AHA>IOMAC.

• Advances in materials Research
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• v.3 no.4
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• pp.183-197
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• 2014

Copolymers of gelatin and poly (vinyl alcohol), (PVA) grafted by acrylic acid (AAc) with excellent water absorption and retention abilities under neutral conditions were successfully synthesized using $^{60}Co$ gamma radiations in presence of ammonium persulphate (APS), as water soluble initiator and sodium bicarbonate ($NaHCO_3$) as foaming agent. The optimum synthesis conditions pertaining to maximum swelling percentage were evaluated as a function of gelatin/PVA ratio, amount of water, concentration of APS, $NaHCO_3$, monomer concentration and total irradiation dose. Maximum percent swelling (1694.59%) of the copolymer, gelatin-co-PVA, was obtained at optimum $[APS]=2.92{\times}10^{-1}mol/L$, $[NaHCO_3]=7.94{\times}10^{-2}mol/L$ and 1.5 mL of water at total dose of 31.104 kGy while in case of grafted copolymer, (gelatin-co-PVA)-g-poly(AAc), maximum percent swelling (560.86%) was obtained using $8.014{\times}10^{-1}mol/L$ of AAc in 9 mL water with 31.104 kGy preirradiation dose. The pristine and grafted copolymers were characterized by Fourier Transform Infrared Spectroscopy (FTIR), Scanning electron Microscopy (SEM), Thermal gravimetric analysis (TGA) and X-Ray Diffraction (XRD) methods. The copolymers loaded with an antiseptic, Povidone, were used as wound dressing materials for wounded gastrocnemius muscle of mice and the results exhibit that (gelatin-co-PVA)-g-poly (AAc) copolymer is a potent wound dressing material as compared to the copolymer.

• The Journal of the Korea Contents Association
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• v.14 no.1
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• pp.537-547
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• 2014

In this paper, the ALT (ALTernative) board and a NetLogo extension module are developed for the active participatory simulation (APS) learning. Through the participatory simulation with HubNet each student can attend the experiment as one of clients. Only one HubNet server, however, is able to use an external device so that the bifocal modeling based learning with multiple users is impossible. In order to overcome the drawback, and enable clients participate into the experiment and collect the experimental data and the measured data, an ATmega 32 based board and its firmware are developed. In addition, Java extension module based on TCP/IP socket interfaces is developed to exchange the data with HubNet server. Finally, we show some NetLogo program examples to use the developed hardware and software for APS and seek the way to use them for science education.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.332-336
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• 2014

In this paper, we propose a complementary metal oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) PMOSFET-type photodetector for high-speed operation. The GBT photodetector of an active pixel sensor (APS) consists of a floating gate ($n^+$-polysilicon) tied to the body (n-well) of the PMOSFET. The p-n junction photodiode that is used in a conventional APS has a good dynamic range but low photosensitivity. On the other hand, a high-gain GBT photodetector has a high level of photosensitivity but a narrow dynamic range. In addition, the pixel size of the GBT photodetector APS is less than that of the conventional photodiode APS because of its use of a PMOSFET-type photodetector, enabling increased image resolution. A CMOS binary image sensor can be designed with simple circuits, as a complex analog to digital converter (ADC) is not required for binary processing. Because of this feature, the binary image sensor has low power consumption and high speed, with the ability to switch back and forth between a binary mode and an analog mode. The proposed CMOS binary image sensor was simulated and designed using a standard CMOS $0.18{\mu}m$ process.