• 한국전기전자재료학회논문지
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• 제20권2호
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• pp.156-161
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• 2007

This paper describes the characteristics of polycrystalline ${\beta}$ or 3C (cubic)-SiC (silicon carbide) thin films heteroepitaxailly grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC film was deposited by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane: $Si_{2}(CH_{3}_{6})$ single precursor. The deposition was performed under various conditions to determine the optimized growth conditions. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_{2}$ were measured by SEM (scanning electron microscope). Finally, depth profiling was invesigated by GDS (glow discharge spectrometer) for component ratios analysis of Si and C according to the grown 3C-SiC film thickness. From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therfore, the poly 3C-SiC thin film is suitable for extreme environment, Bio and RF MEMS applications in conjunction with Si micromaching.

• Bulletin of the Korean Chemical Society
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• 제28권4호
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• 한국전기전자재료학회논문지
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• 제17권6호
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• pp.580-585
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• 2004

Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.30-34
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyldisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m$/hr. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.98-102
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• 2010

This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.

• 한국진공학회지
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• 제22권3호
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• pp.126-130
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• 2013

PSG/$SiO_2$ 보호막 처리된 Al-1%Si 박막배선 내 sodium (Na)과 수분($H_2O$) 게터링(gettering) 현상을 측정, 분석하였다. PSG/$SiO_2$ 보호막과 Al-1%Si 박막을 상압CVD (APCVD: atmosphere pressure chemical vapor deposition)법과 DC 마그네트론 스퍼터로 각각 증착하였고, 이차이온 질량분석기(SIMS: secondary ion mass spectrometry)를 이용한 깊이분포측정(depth profiling) 분석을 통해 PSG/$SiO_2$ 보호막으로부터 Al-1%Si 박막배선 층까지의 sodium과 수분 등 성분들의 분포를 확인하였다. Sodium과 수분 피크 모두 Al-1%Si 박막배선 내부보다는 막 간 계면에서 강하게 나타났다. PSG와 $SiO_2$ 보호막 계면에서는 sodium 피크는 관찰되었지만 수분 피크는 관찰되지 않았다.

• 한국정보통신학회논문지
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• 제4권3호
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• pp.705-711
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• 2000

반도체 제조공정과 미세가공 기술을 이용하여 $300^{\circ}C$의 동작온도에서 약 60 mW의 전력소모를 갖는 산화물 반도체 박막 가스센서 어레이를 제조하였다. 멤브레인의 우수한 열적 절연은 $0.1\mum\; 두께의\; Si_3N_4와\; 1\mum$ 두께의 PSG의 이중 층에 의한 것으로, 각각 LPCVD(저압화학 기상증착)와 APCVD(대기압 화학 기상증착)에 의해 제조되었다. 센서 어레이의 4가지 산화물 반도체 박막 감지물질로는 1 wt.% Pd가 도핑된 $SnO_2,\; 6 we.% A1_2O_3$가 도핑된 ZnO, $WO_3$, ZnO를 이용하였으며,4가지 감지물질의 베이스라인 저항은 $300^{\circ}C$ 에서 3일 동안의 에이징을 거친 후 안정됨을 보였다. 제조된 초소형 산화물 반도체 박막 가스센서 어레이는 여러 가지 가스의 노출 시 유용한 저항 변화를 나타내었으며 감도는 감지 물질에 강하게 의존함을 알 수 있었다.

• 한국정보통신학회논문지
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• 제6권2호
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• pp.315-322
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• 2002

반도체 제조공정과 미세가공 기술을 이용하여 30$0^{\circ}C$의 동작온도에서 약 60㎽의 전력소모를 갖는 산화물 반도체 박막 가스센서 어레이를 제조하였다. 멤브레인의 우수한 열적 절연은 0.1$\mu\textrm{m}$ 두께의 Si$_3$N$_4$와 1$\mu\textrm{m}$ 두께의 PSG의 이중 층에 의한 것으로, 각각 LPCVD(저압화학 기상증착)와 APCVD(대기압 화학 기상증착)에 의해 제조되었다. 센서 어레이의 4가지 산화물 반도체 박막 감지물질로는 1wt.%Pd가 도핑된 SnO$_2$, 6wt.% $Al_2$O$_3$가 도핑된 ZnO, WO$_3$, ZnO를 이용하였으며, 제조된 초소형 산화물 반도체 박막 가스센서 어레이는 여러 가지 가스의 노출시 유용한 저항 변화를 나타내었고 감도는 감지 물질에 강하게 의존함을 알 수 있었다. 센서 소자의 공정 수율을 증진시키기 위하여 히터 부위를 함몰하는 공정 방법을 취하였으며, 그 결과 월등한 수율 개선을 도모할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).