• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1867-1869
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• 2003

In this paper, chamber(Circuit breaker compartment of C-GIS) made of stainless steel with 4 mm width is used. Artificial defect was made on enclosure or HV conductor of chamber and $SF_6$ gas was injected into it according to pressure. In this experiment, Acoustic emission sensors of different types was used to compare sensitivity to detect acoustic signal occurred by Partial discharge(PD) of according to types and resonance frequency in $SF_6$ gas atmosphere. Sensors used in tests was R6I, R15I and 2/4/6 Pre-Amplifier connected with R6IU without pre. amp. In case of R6IU, gain was adjusted with 40 dB like other sensors and operated by differential mode. Post amplifier(post. amp) and band pass filter(BPF) were developed Gain of post. amp. is 60 dB and BPF has band width of $50{\sim}300$ kHz. Also, envelope circuit developed reduces frequency of AE sensor. As a result, in $SF_6$ atmosphere, R6IU and R6I had resonance frequency of 60 Hz was better than R15I. Also, R6IU was better than R6I because of type property of pre.amp. had differential mode.

• Journal of the Korean Society of Radiology
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• v.11 no.3
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• pp.101-108
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• 2017

DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The advanced DC/DC converter uses a PWM-IC with OP-Amp. (Operational Amplifier) to control a MOSFET (metal-oxide semiconductor field effect transistor), which is a switching component, efficiently. In this paper, it is shown that the electrical characteristics of OP-Amp. are affected by radiations of ${\gamma}$ rays using $^{60}Co$ for TID (Total Ionizing Dose) testing and 5 heavy ions for SEL (Single Event Latch-up) testing. TID testing on OP-Amp. is accomplished up to the total dose of 30 krad, and the cross section($cm^2$) versus LET($MeV/mg/cm^2$) in the OP-Amp. operation is evaluated SEL testing after implementation of the controller board.

• Journal of the Korea Institute of Military Science and Technology
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• v.26 no.3
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• pp.227-233
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• 2023

In this paper, to substitute the existing TWTA(Travailing Wave Tube Amplifier) component in small radar system, we developed the Ku band SSPA(Solid-State Power Amplifier) based on the fabrication of power MMIC (Monolithic Microwave Integrated Circuit) chips. For the development of the 500 W SSPA, the 40 W-grade power MMIC was designed by ADS(Advanced Design System) at Keysight company with UMS GH015 library, and was processed by UMS foundry service. And 70 W main power modules were achieved the 2-way T-junction combiner method by using the 40 W-grade power MMICs. Finally, the 500 W SSPA was fabricated by the wave guide type power divider between the drive power amplifier and power modules, and power combiner with same type between power modules and output port. The electrical properties of this SSPA had 504 W output power, -58.11 dBc spurious, 1.74 °/us phase variation, and -143 dBm/Hz noise level.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.189-192
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• 2000

In this paper, we propose the novel test method to detect short and open faults in CMOS Op-amp. The proposed method is composed of two test steps - the offset and the high frequency test. Using HSPICE simulation, we get a 100％ fault coverage. To verify the proposed method, we design and fabricate the CMOS op-amp that contains various short and open faults through Hyundai 0.65$\mu\textrm{m}$ 2-poly 2-metal CMOS process. Experimental results of fabricated chip demonstrate that the proposed test method can detect short and open faults in CMOS Op-amp.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.72-75
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• 2003

For the analog output buffer in the data driver for large size and high resolution TFT-LCDs, we proposed operational amplifier (op-amp) which contains newly developed transconductance-boosted input stage which enables the low-power consumption and the high slew-rate. The slew-rate and the quiescent current of the proposed op-amp are $6.1V/{\mu}sec$ and $8{\mu}A$, respectively.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.521-524
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• 1990

There is an increasing interest in high-speed signal processing in modern telecommunication and consumer electronics applications. HDTV, ISDN. A limiting factor in Op-Amp based analog integrated circuits is the limited useful frequency range. This research program will develop a new CMOS Op-Amp architecture with improved gainband width product. The new design CMOS Op-Amp will achieve up to 100MHz unity gainband width with a 1.5-micron design rule.

• Proceedings of the KIEE Conference
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• summer
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• pp.1263-1265
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• 2004

RF-ID system is one of the very interesting field not only in a technical and economical point of view but also that people are still trying to realize lossless power transmission. This paper has a purpose on the efficient power transmission at the passive type IDcard by using wireless power transmission system. The most difficult but important part of the passive type RF-ID system is building the system that supplies power from Reader-antenna to IDcard-antenna. To check what is the most efficient way to deliver power depending on what kind of specifications of the power-amp in reader, antenna and antenna in IDcard is for operating IDcard circuit efficiently receiving the power from reader-antenna. For this, we used 125kHz sinewave for RF signal as a basic specification, OP-amp for amplifying signal and power-amp for amplifying power, loop type antenna.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.7
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• pp.665-670
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• 2016

In this paper, we suggest the design of OP-AMP using MOSFET in the operation of sub-threshold condition as a basic unit of an IoT. The sub-threshold operation of MOSFET is useful for an ultra low power consumption of sensor network system in the IoT, because it cause the supply voltage to be reduced. From the simulation result using 0.35 um CMOS process, the supply voltage, VDD can be reduced with 0.6 V, open-loop gain of 43 dB and the power consumption was evaluated with about $1.3{\mu}W$ and the active size for an integration was measured with $64{\mu}m{\times}105{\mu}m$. It is expected that the proposed circuit is applied to the low power sensor network for IoT.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.309-315
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• 2010

A fully-differential low-voltage low-power electrocardiogram (ECG) amplifier by using the nonfeedback PMOS pseudo-resistors is proposed. It consists of two operational-transconductance amplifiers (OTA) in series (a preamplifier and a variable-gain amplifier). To make it insensitive to the gate leakage current of the OTA input transistor, the feedback pseudo-resistor of the conventional ECG amplifier is moved to input branch between the OP amp summing node and the DC reference voltage. Also, an OTA circuit with a Gm boosting block without reducing the output resistance (Ro) is proposed to maximize the OTA DC gain. The measurements shows the frequency bandwidth from 7 Hz to 480 Hz, the midband gain programmable from 48.7 dB to 59.5 dB, the total harmonic distortion (THD) less than 1.21% with a full voltage swing, and the power consumption of 233 nW in a 0.13 ${\mu}m$ CMOS process at the supply voltage of 0.7 V.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.1
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• pp.68-79
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• 1992

In the high speed analog system satellite communication system, video signal processing and optical fiber interface circuits, GaAs high gain operational amplifier is advantageous due to obtain a high gain because of its low transconductance and other drawbacks, such as low frequency dispersion and process variation. Therefore in this paper, a circuit techniques for improving the voltage gain for GaAs MESFET amplifier is presented. Also, various types of existing current mirror and current mirror proposed are compared.To obtain the high differential gain, bootstrap gain enhancement technique is used and common mode feedback is employed in differential amplifier.The simulation results show that gain is higher than that of basic amplifier about 18.6dB, and stability and frequency performance of differential amplifier are much improved.