• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.123-126
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• 2008

We report the improved AMOLED with a-Si TFT backplane based on our unique structure. Our new structure is called Dual-plate OLED Display (DOD). It can also achieve not only higher uniformity of luminance in large-sized display due to low electrical resistance of common electrode but also wider viewing angle.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.119-122
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• 2008

In this paper, we describe the current status and issues of the oxide thin-film transistors (OTFTs), which attract much attention as an emerging new backplane technology replacing conventional silicon-based TFTs technologies. First, the unique benefits of OTFTs will be presented as a backplane for large-sized AMOLED including note-book PC, second TV and HD-TV. And then, the state-of-the-art transistor performance and uniformity characteristics of OTFTs will be highlighted. The obtained a-IGZO TFTs exhibited the field-effect mobility of $18\;cm^2/Vs$, threshold voltage of 1.8 V, on/off ratio of $10^9$, and subthreshold gate swing of 0.28 V/decade. In addition, the world largest-sized 12.1-inch WXGA active-matrix organic light emitting diode (AMOLED) display is demonstrated using indium-gallium-zinc oxide (IGZO) TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.171-174
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• 2008

We present results demonstrating that low power consumption phosphorescent AMOLED displays can be fabricated on ultra-thin ($25{\mu}m$) stainless steel substrates, combining an amorphous silicon backplane with a top emission phosphorescent OLED frontplane. We will present preliminary results of flexibility testing on these displays.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.109-112
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• 2008

The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according transmission electron microscopy. JIC poly-Si exhibits an excellent uniformity with regards to the grain size. We report here the blanket crystallization of the large area using the $2^{nd}$ generation glass substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.413-418
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• 2006

Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1697-1700
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• 2006

A Novel pixel structure with a new threshold voltage compensation technique is proposed for large-size a-Si:H AMOLED panel application. The proposed pixel improves image quality with threshold voltage compensation and alleviates annealing technique for display-off time. Sensing the threshold voltage of driving TFT for 20-inch WUXGA panel is verified by the HSPICE simulation.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1436-1439
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• 2005

A novel current-type data driver for active matrix organic light emitting diode (AMOLED) is proposed for current uniformity enhancement among its output channels. New architecture is composed of shadow DACs that precharge output stages, a single-real DAC that correct the output level to a real target current level and output stages that operate in 3 states of sampling, correcting and driving. Simulation results show that the proposed driving method and circuits improve the current uniformity among output channels of a current-type driver IC.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.64-67
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• 2005

We fabricated an array consisting of organic TFTs(OTFT) and organic LEDs (OLED) in order to demonstrate the possible application of OTFTs to flexible active matrix OLED (AMOLED). The panel was composed of $64{\times}64$ pixels on 4 inch size polyethylene-terephehalate (PET) substrate in which each pixel had one OTFT integrated with one green OLED. The panel successfully displayed some letters and pictures by emitting green light with a luminance of $1.5\;cd/m^2$ at 6 V, which was controlled by the gate voltage of OTFT.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.665-667
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• 2005

VIATRON TECHNOLOGIES has developed FE-RTP system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The system employs sequential heat treatment methods using temperature control and rapid thermal processor modules. The temperature control modules provide exceptionally uniform heating and cooling of the glass substrates to within ${\pm}2^a\;C$. The rapid thermal process that combines heating with field induction accelerates the treatment rates. The new FE-RTP system can process $730{\times}920mm$ glass substrates as thin as 0.4 mm. The uniform nature of poly-Si films produced by FE-RTP resulted in AMOLED panels with no laser-Muras. Furthermore, FE-RTP system also showed superior performances in other heat treatment processes involved in poly-Si TFT fabrications, such as dopant activation, gate oxide densification, hydrogenation, and pre-compaction.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.318-321
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• 2009

We have studied transparent top gate Al-Zn-Sn-O (AZTO) TFTs with an $Al_2O_3$ protective layer (PL) on an active layer. We also fabricated a transparent 2.5 inch QCIF+AMOLED display panel using the AZTO TFT back-plane. The AZTO active layers were deposited by RF magnetron sputtering at room temperature and the PL was deposited by ALD with two different processes. The mobility and subthreshold slope were superior in the cases of the vacuum annealing and the oxygen plasma PL compared to the $O_2$ annealing and the water vapor PL, however, the bias stability was excellent for the TFTs of the $O_2$ annealing and the water vapor PL.