• Title/Summary/Keyword: ALD reactor

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HIGH-THROUGHPUT PROCESS FOR ATOMIC LAYER DEPOSITION

  • Shin, Woong-Chul;Choi, Kyu-Jeong;Baek, Min;Kim, Mi-Ry
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.23.2-23.2
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    • 2009
  • Atomic layer deposition (ALD)have been proven to be a very attractive technique for the fabrication of advanced gate dielectrics and DRAM insulators due to excellent conformality and precise control of film thickness and composition, However, one major disadvantages of ALD is its relatively low deposition rate (throughput) because the deposition rate is typically limited by the time required for purging process between the introduction of precursors. In order to improve its throughput, many efforts have been made by commercial companies, for example,the modification reactor and development of precursors. However, any promising solution has not reported to date. We developed a new concept ALD system(Lucida TM S200) with high-throughput. In this process, a continuous flow of ALD precursor and purging gas are simultaneously introduced from different locations in the ALD reactor. A cyclic ALD process is carried out by moving the wafer holder up and down. Therefore, the time required for ALD reaction cycle is determined by speed of the wafer holder and vapor pressure of precursors. We will present the operating principle of our system and results of deposition.

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Atomic Layer Deposition for Powder Coating (분말 코팅을 위한 원자층 증착법)

  • Choi, Seok;Han, Jeong Hwan;Choi, Byung Joon
    • Journal of Powder Materials
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    • v.26 no.3
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    • pp.243-250
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    • 2019
  • Atomic layer deposition (ALD) is widely used as a tool for the formation of near-atomically flat and uniform thin films in the semiconductor and display industries because of its excellent uniformity. Nowadays, ALD is being extensively used in diverse fields, such as energy and biology. By controlling the reactivity of the surface, either homogeneous or inhomogeneous coating on the shell of nanostructured powder can be accomplished by the ALD process. However, the ALD process on the powder largely depends on the displacement of powder in the reactor. Therefore, the technology for the fluidization of the powder is very important to redistribute its position during the ALD process. Herein, an overview of the three types of ALD reactors to agitate or fluidize the powder to improve the conformality of coating is presented. The principle of fluidization its advantages, examples, and limitations are addressed.

Rotation Speed Dependence of ZnO Coating Layer on SnSe powders by Rotary Atomic Layer Deposition Reactor (회전형 원자층 증착기의 회전 속도에 따른 SnSe 분말 상 ZnO 박막 증착)

  • Jung, Myeong Jun;Yun, Ye Jun;Byun, Jongmin;Choi, Byung Joon
    • Journal of Powder Materials
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    • v.28 no.3
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    • pp.239-245
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    • 2021
  • The SnSe single crystal shows an outstanding figure of merit (ZT) of 2.6 at 973 K; thus, it is considered to be a promising thermoelectric material. However, the mass production of SnSe single crystals is difficult, and their mechanical properties are poor. Alternatively, we can use polycrystalline SnSe powder, which has better mechanical properties. In this study, surface modification by atomic layer deposition (ALD) is chosen to increase the ZT value of SnSe polycrystalline powder. SnSe powder is ground by a ball mill. An ALD coating process using a rotary-type reactor is adopted. ZnO thin films are grown by 100 ALD cycles using diethylzinc and H2O as precursors at 100℃. ALD is performed at rotation speeds of 30, 40, 50, and 60 rpm to examine the effects of rotation speed on the thin film characteristics. The physical and chemical properties of ALD-coated SnSe powders are characterized by scanning and tunneling electron microscopy combined with energy-dispersive spectroscopy. The results reveal that a smooth oxygen-rich ZnO layer is grown on SnSe at a rotation speed of 30 rpm. This result can be applied for the uniform coating of a ZnO layer on various powder materials.

Thermoelectric Performance Enhancement of Sintered Bi-Te Pellets by Rotary-type Atomic Layer Deposition (로터리형 원자층 증착법을 이용한 Bi-Te계 소결체의 열전 성능 개선)

  • Myeong Jun Jung;Ji Young Park;Su Min Eun;Byung Joon Choi
    • Journal of Powder Materials
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    • v.30 no.2
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    • pp.130-139
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    • 2023
  • Thermoelectric materials and devices are energy-harvesting devices that can effectively recycle waste heat into electricity. Thermoelectric power generation is widely used in factories, engines, and even in human bodies as they continuously generate heat. However, thermoelectric elements exhibit poor performance and low energy efficiency; research is being conducted to find new materials or improve the thermoelectric performance of existing materials, that is, by ensuring a high figure-of-merit (zT) value. For increasing zT, higher σ (electrical conductivity) and S (Seebeck coefficient) and a lower κ (thermal conductivity) are required. Here, interface engineering by atomic layer deposition (ALD) is used to increase zT of n-type BiTeSe (BTS) thermoelectric powders. ALD of the BTS powders is performed in a rotary-type ALD reactor, and 40 to 100 ALD cycles of ZnO thin films are conducted at 100℃. The physical and chemical properties and thermoelectric performance of the ALD-coated BTS powders and pellets are characterized. It is revealed that electrical conductivity and thermal conductivity are decoupled, and thus, zT of ALD-coated BTS pellets is increased by more than 60% compared to that of the uncoated BTS pellets. This result can be utilized in a novel method for improving the thermoelectric efficiency in materials processing.

TiO2 Thin Film Coating on an Nb-Si-Based Superalloy via Atomic Layer Deposition (원자층 증착법을 통한 Nb-Si계 초내열합금 분말 상의 TiO2 박막 증착 연구)

  • Ji Young Park;Su Min Eun;Jongmin Byun;Byung Joon Choi
    • Journal of Powder Materials
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    • v.31 no.3
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    • pp.255-262
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    • 2024
  • Nano-oxide dispersion-strengthened (ODS) superalloys have attracted attention because of their outstanding mechanical reinforcement mechanism. Dispersed oxides increase the material's strength by preventing grain growth and recrystallization, as well as increasing creep resistance. In this research, atomic layer deposition (ALD) was applied to synthesize an ODS alloy. It is useful to coat conformal thin films even on complex matrix shapes, such as nanorods or powders. We coated an Nb-Si-based superalloy with TiO2 thin film by using rotary-reactor type thermal ALD. TiO2 was grown by controlling the deposition recipe, reactor temperature, N2 flow rate, and rotor speed. We could confirm the formation of uniform TiO2 film on the surface of the superalloy. This process was successfully applied to the synthesis of an ODS alloy, which could be a new field of ALD applications.

Atomic Layer Deposition of Silicon Oxide Thin Film on $TiO_2$ nanopowders (원자층증착법에 의한 $TiO_2$ 나노파우더 표면의 실리콘 산화물 박막 증착)

  • Kim, Hee-Gyu;Kim, Hyung-Jong;Kang, In-Gu;Kim, Doe-Hyoung;Choi, Byung-Ho;Jung, Sang-Jin;Kim, Min-Wan
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.11a
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    • pp.381-381
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    • 2009
  • 염료감응형 태양전지의 효율 향상을 위한 다양한 방법들 중 $TiO_2$ 나노 파우더의 표면 개질 및 페이스트의 분산성 향상을 위한 연구가 활발하게 진행되고 있다. 기존 나노 파우더의 표면 개질법으로는 액상 공정인 졸겔법이 있으나 표면 처리 공정에서의 응집현상은 아직 해결해야 할 과제 중 하나이다. 이에 본 연구에서는 진공증착방법인 ALD법을 이용하여 염료감응형 태양전지용 $TiO_2$ 나노 파우더의 $SiO_2$ 산화물 표면처리를 통한 분산특성을 파악하였다. 기존 ALD법의 경우 reactor의 온도가 $300{\sim}500^{\circ}C$ 정도의 고온에서 공정이 이루어졌지만 본 실험에서는 2차 아민계촉매(pyridine)을 사용하여 reactor의 온도를 $30^{\circ}C$정도의 저온공정에서 $SiO_2$ 산화물을 코팅을 하였다. MO source로는 액체상태의 TEOS$(Si(OC_2H_5)_4)$를, 반응가스로는 $H_2O$를 사용하였고, 불활성 기체인 Ar 가스는 purge 가스로 각각 사용 하였다. ALD 공정에 의해 표면처리 된 $TiO_2$ 나노 파우더의 분산특성은 각 공정 cycle에 따라 FESEM을 통하여 입자의 형상 및 분산성을 확인하였으며 입도 분석기를 통하여 부피의 변화 및 분산 특성을 확인하였다. 공정 cycle 이 증가함에 따라 입자간의 응집현상이 개선되는 것을 확인 할 수 있었으며, 100cycles에서 응집현상이 가장 많이 감소하는 것을 확인할 수 있었다. 또한 표면 처리된 $SiO_2$ 산화막은 XRD를 통한 결정 분석 및 EDX를 통한 정성 분석을 통하여 확인하였다.

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Microstructure of ZnO Thin Film on Nano-Scale Diamond Powder Using ALD (나노급 다이아몬드 파우더에 ALD로 제조된 ZnO 박막 연구)

  • Park, S.J.;Song, S.O.
    • Journal of the Korean Vacuum Society
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    • v.17 no.6
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    • pp.538-543
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    • 2008
  • Recently a nano-scale diamond is possible to manufacture forms of powder(below 100 nm) by new processing of explosion or deposition method. Using a sintering of nano-scale diamond is possible to manufacture of grinding tools. We have need of a processing development of coated uniformly inorganic to prevent an abnormal grain growth of nano-crystal and bonding obstacle caused by sintering process. This paper, in order to improve the sintering property of nano-scale diamond, we coated ZnO thin films(thickness: $20{\sim}30\;nm$) in a vacuum by ALD(atomic layer deposition) Economically, in order to deposit ZnO all over the surface of nano-scale diamond powder, we used a new modified fluidized bed processing replaced mechanical vibration effect or fluidized bed reactor which utilized diamond floating owing to pressure of pulse(or purge) processing after inserted diamond powders in quartz tube(L: 20 mm) then closed quartz tube by porosity glass filter. We deposited ZnO thin films by ALD in closed both sides of quartz tube by porosity glass filter by ALD(precursor: DEZn($C_4H_{10}Zn$), reaction gas: $H_2O$) at $10^{\circ}C$(in canister). Processing procedure and injection time of reaction materials set up DEZn pulse-0.1 sec, DEZn purge-20 sec, $H_2O$ pulse-0.1 sec, $H_2O$ purge-40 sec and we put in operation repetitive 100 cycles(1 cycle is 4 steps) We confirmed microstructure of diamond powder and diamond powder doped ZnO thin film by TEM(transmission electron microscope) Through TEM analysis, we confirmed that diamond powder diameter was some $70{\sim}120\;nm$ and shape was tetragonal, hexagonal, etc before ALD. We confirmed that diameter of diamond powders doped ZnO thin film was some $70{\sim}120\;nm$ and uniform ZnO(thickness: $20{\sim}30\;nm$) thin film was successfully deposited on diamond powder surface according to brightness difference between diamond powder and ZnO.

A Study on the Atomic-Layer Deposition Mechanism and Characteristics of TiN Films Deposited by Cycle-CVD (Cycle-CVD법으로 증착된 TiN 박막의 ALD 증착기구와 특성에 관한 연구)

  • Min, Jae-Sik;Son, Young-Woong;Kang, Won-Gu;Kang, Sang-Won
    • Korean Journal of Materials Research
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    • v.8 no.5
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    • pp.377-382
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    • 1998
  • Atomic layer deposition(ALD) of amorphous TiN films on $SiO_2$ between 17$0^{\circ}C$ and 21O$^{\circ}C$ has been investigated by alternate supply of reactant sources, Ti[N($C_2,H_5,CH_3)_2]_4$ [tetrakis(ethylmethylamminoltitanium: TEMAT] and $NH_3$. Reactant sources were injected into the reactor in the order of TEMAT vapor pulse, Ar gas pulse, $NH_3$. gas pulse and Ar gas pulse. Film thickness per cycle was saturated at around 1.6 monolayer(MU per cycle with sufficient pulse times of reactant sources at 20$0^{\circ}C$. The results suggest that film thickness per cycle could be beyond 1 MLicycie in ALD, which were explained by rechemisorption mechanisms of reactant sources. The ideal linear relationship be¬tween number of cycles and film thickness is confirmed. As a results of surface limited reactions of ALD, step cover¬age was excellent. Particles caused by the gas phase reactions between TEMAT and NH3 were almost free because TEMAT was seperated from $NH_3$ by the Ar pulse. In spite of relatively low substrate temperature, carbon impurity was incorporated below 4 at%.

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Characterization of $HfO_2 /SiON$ stack structure for gate dielectrics (ALD를 이용한 극박막 $HfO_2 /SiON$ stack structure의 특성 평가)

  • Kim, Youngsoon;Lee, Taeho;Jaemin Oh;Jinho Ahn;Jaehak Jung
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2002.11a
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    • pp.115-121
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    • 2002
  • In this research we have investigated the characteristics of ultra thin $HfO_2 /SiON$stack structure films using several analytical techniques. SiON layer was thermally grown on standard SCI cleaned silicon wafer at $825^{\circ}C$ for 12sec under $N_2$O ambient. $HfO_2 /SiON$$_4$/$H_2O$ as precursors and $N_2$as a carrier/purge gas. Solid HfCl$_4$was volatilized in a canister kept at $200^{\circ}C$ and carried into the reaction chamber with pure $N_2$carrier gas. $H_2O$ canister was kept at $12^{\circ}C$ and carrier gas was not used. The films were grown on 8-inch (100) p-type Silicon wafer at the $300^{\circ}C$ temperature after standard SCI cleaning, Spectroscopic ellipsometer and TEM were used to investigate the initial growth mechanism, microstructure and thickness. The electrical properties of the film were measured and compared with the physical/chemical properties. The effects of heat treatment was discussed.

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The characteristics of silicon nitride thin films prepared by atomic layer deposition with batch type reactor (Batch-Type 원자층 증착 방법으로 형성한 실리콘 질화막의 특성)

  • Kim, Hyuk;Lee, Ju-Hyun;Han, Chang-Hee;Kim, Woon-Joong;Lee, Yeon-Seung;Lee, Won-Jun;Na, Sa-Kyun
    • Journal of the Korean Vacuum Society
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    • v.12 no.4
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    • pp.263-268
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    • 2003
  • Precise thickness control and excellent properties of silicon nitride thin films are essential for the next-generation semiconductor and display devices. In this study, silicon nitride thin films were deposited by batch-type atomic layer deposition (ALD) method using $SiC1_4$ and $NH_3$ as the precursors at temperatures ranging from 500 to $600^{\circ}C$. Thin film deposition using a batch-type ALD reactor was a layer-by-layer atomic growth by self-limiting surface reactions, and the thickness of the deposited film can be controlled by the number of deposition cycles. The silicon nitride thin films deposited by ALD method exhibited composition, refractive index and wet etch rate similar with those of the thin films deposited by low-pressure chemical vapor deposition method at $760^{\circ}C$. The addition of pyridine mixed with precursors increased deposition rate by 50%, however, the films deposited with pyridine was readily oxidized owing to its unstable structure, which is unsuitable for the application to semiconductor or display devices.