• 통합자연과학논문집
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• 제2권4호
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• pp.233-236
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• 2009

This study was undertaken to measure the electrochemical corrosion of amorphous $Zr_{65}Al_8Ni_{15}Cu_{12}$ (at.%) alloy ribbon under various conditions, including 0.4 mM HCl solution, and for various values of the pH and the immersion time. The corrosion potentials($E_{corr}$) for the amorphous $Zr_{65}Al_8Ni_{15}Cu_{12}$ alloy in 0.4 mM HCl decreased with increasing temperature; the corrosion current density($I_{corr}$) increased with increasing temperature in general. The polarization resistance($R_p$) was inversely proportional to the corrosion rate. While pH=7, 9, 11 was not as sensitive as pH=3, 5, pH=3 was more sensitive for amorphous $Zr_{65}Al_8Ni_{15}Cu_{12}$ alloy than other pHs specially. The change of mass in the 70 mM $H_2SO_4$ solution with immersion time was the greatest in the first 100 h.

• Bulletin of the Korean Chemical Society
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• 제28권4호
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• pp.647-651
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• 2007

In order to investigate the excited-state intramolecular proton transfer (ESIPT) process of dihydroxyanthraquinones (DHAQ; 1,5-DHAQ and 1,8-DHAQ) in organic-inorganic hybrid matrices, transparent SiO2, SiO2- Al2O3, and Al2O3 matrices chemically bonded with DHAQ were prepared using a sol-gel technique. The absorption maxima of 1,5- and 1,8-DHAQ in SiO2 matrices are observed at around 420 nm, whereas those of DHAQ in both SiO2-Al2O3 and Al2O3 matrices are markedly shifted to longer wavelength compared with those in SiO2 matrix. This indicates that DAHQ forms a chemical bond with an Al atom of Al2O3. The DHAQ in SiO2 matrix shows a markedly Stokes-shifted emission which is originated from the ESIPT in DHAQ. Based on the emission lifetimes of DHAQ, the ESIPT of DHAQ was found to be strongly affected by the chemical interaction with Al atom in the Al2O3-related matrices.

• 대한금속재료학회지
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• 제50권8호
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• pp.575-582
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• 2012

Medium carbon steel was aluminized by hot dipping into molten Al or Al-1 at% Si baths. After hot-dipping in these baths, a thin Al-rich topcoat and a thick alloy layer rich in $Al_5Fe_2$ formed on the surface. A small amount of FeAl and $Al_3Fe$ was incorporated in the alloy layer. Silicon from the Al-1 at% Si bath was uniformly distributed throughout the entire coating. The hot dipping increased the microhardness of the steel by about 8 times. Heating at $700-1000^{\circ}C$, however, decreased the microhardness through interdiffusion between the coating and the substrate. The oxidation at $700-1000^{\circ}C$ in air formed a thin protective ${\alpha}-Al_2O_3$ layer, which provided good oxidation resistance. Silicon was oxidized to amorphous silica, exhibiting a glassy oxide surface.

• 한국재료학회지
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• 제10권6호
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• pp.398-402
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• 2000

유도 용해후 열기계적 처리를 거친 3종류의 $Al_3Ti-Cr합금, 즉 Al_{67}Ti_{25}Cr_8,\;Al_{66}Ti_{24}Cr_{10}$ 및 Al_{59}Ti_{26}Cr_{15}에 대해 2.5% NaCl 용액 내에 부삭시험과 1000, 1100 및 $1200^{\circ}C$에서의 고온 산화시험을 실시하였다. 전기화학적 평가결과에서 Cr조성이 증가함에 따라 국부부식에 대한 내식성이 증가하였으며, 부동태 피막의 취성파괴를 방지하였다. XPS결과는 $Al_3Ti-Cr$합금의 부동태 피막은 주로 $Al_2O_3$로 구성되어 있으며, $TiO_2$ 및 $Cr_2O_3$도 공존하고 있음을 알 수 있었다. 고온 내산화성은 모든 시편이 전체적으로 뛰어난 내산화성을 지니고 있었는데, 구체적으로는 $Al_{59}Ti_{26}Cr_{15},\;Al_{66}Ti_{24}Cr_{10}\;및\;Al_{67}Ti_{25}Cr_8$의 순으로 증가하였다. 이는 합금내의 Al 함량이 증가할수록 $Al_2O_3$보호피막의 형성이 용이하였기 때문이었다.

• 한국주조공학회지
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• 제30권4호
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• pp.147-150
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• 2010

알루미늄 합금의 미세조직 개량을 위한 목적으로 사용되는 Al-Ti-B 합금계의 미세화제는 재활용 과정에서 붕소(B)의 농축(Agglomeration) 문제 및 Zr, Si, Cr 등을 함유하는 합금에서 미세화 효과가 급격히 감소하는 Poisoning effect 등이 지적되어 왔다. 최근에는 이를 대체할 수 있는 Al-Ti-C 합금계의 미세화제에 대한 연구가 활발한데 이는 TiC가 용탕 내에서 ${\alpha}$-Al의 핵생성처로 직접 작용하는 점에 착안한 것이다. 한편, 이들 Al-Ti-B, Al-Ti-C 계의 미세화제는 그 제조공정에서 $K_2TiF_6$를 이용함에 따라 불소함유 유해가스를 배출하여 환경 문제를 야기하고, 이를 포집/정화하기 위한 추가설비를 요구하게 된다. 따라서 대기 환경 오염 및 경제성 측면에서 유리한 미세화제의 친환경 제조기술에 대한 개발이 필요한 시점이다. 본 연구에서는 $K_2TiF_6$를 사용하지 않고 용탕 내의 자발적 반응을 이용하여 환경 및 경제적 측면에서 유리한 Al-Ti-C 미세화제를 개발하고자 하였다. A3003 합금을 대상소재로 하여 개발된 Al-Ti-C 미세화제와 상용 Al-Ti-B 미세화제의 미세화 도달시간 및 fading 발생 등을 비교하였다. 본 연구를 통하여 개발된 Al-8.6Ti-0.025C 미세화제는 상용 Al-Ti-B 미세화제 보다 적은 첨가량에도 유사한 미세화 성능을 나타내었으며 용탕 유지시간 100분까지도 fading이 발생하지 않는 것을 확인하였다.

• 한국재료학회지
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• 제26권8호
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• pp.430-437
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• 2016

Aluminum oxide ($Al_2O_3$) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide ($C_{12}H_{30}Al_2O_2$), and water vapor ($H_2O$) as the reactant at deposition temperatures ranging from 150 to $300^{\circ}C$. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at $250^{\circ}C$; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical $ALD-Al_2O_3$ process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/cycle. The as-deposited $ALD-Al_2O_3$ film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at $1000^{\circ}C$. The refractive index of the $ALD-Al_2O_3$ films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ were stoichiometric, with no carbon impurity. The step coverage of the $ALD-Al_2O_3$ film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the $Al/ALD-Al_2O_3/p-Si$ structure, the dielectric constant of the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ was determined to be ~8.1, with a leakage current density on the order of $10^{-8}A/cm^2$ at 1 V.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.729-733
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• 2005

Al electrode for OLED was deposited by FTS (Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar or Ar+kr mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr). The film thickness and I-V curve of Al/cell were measured and evaluated. In the results, when Al thin films were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11 V. And using the Ar:Kr($75\%:25\%$) mixed gas, the turn-on voltage of Al/cell decreased to about 7 V.

• 한국표면공학회지
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• 제37권3호
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• pp.152-157
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• 2004

Ti-Al-N ($Ti_{75}$ $Al_{25}$ N) and Ti-Al-Si-N ($Ti_{69}$ $Al_{23}$ $Si_{8}$N) coatings synthesized by a DC magnetron sputtering technique were studied comparatively with respect to phase characterization and high-temperature oxidation behavior. $Ti_{69}$ $Al_{23}$ $Si_{ 8}$N coating had a nanocomposite microstructure consisting of nanosized(Ti,Al,Si)N crystallites and amorphous $Si_3$$N_4$, with smooth surface morphology. Ti-Al-N coating of which surface $Al_2$$O_3$ layer formed during oxidation suppressed further oxidation. It was sufficiently stable against oxidation up to about $700^{\circ}C$. Ti-Al-Si-N coating showed better oxidation resistance because both surface Ab03 and near-surface $SiO_2$ layers suppressed further oxidation. XRD, GDOES, XPS, and scratch tests were performed.

• 한국세라믹학회지
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• 제28권8호
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• pp.593-602
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• 1991

Al2O3 and NiO-doped Al2O3 powders were prepared from the ethanol solution of Al (NO3)3$.$9H2O and Ni(NO3)2$.$6H2O by spray pylolysis method using two-fluid nozzle. As a result of spraying test with 0.3 mol/{{{{ iota }} concentration starting solution, mean droplet sizes varied with 8.99∼9.69$\mu\textrm{m}$ and those standard deviation were 4.57∼5.12. As-prepared powders which were synthesized at 1000$^{\circ}C$ have spherical shape, sizes of 0.1∼3.0$\mu\textrm{m}$ and specific surface area of 22.34∼24.20㎡/g. Most powders consisted of {{{{ gamma }}-Al2O3 phase and transforned into ${\alpha}$-A;2O3 phase by calcination at 1100$^{\circ}C$ for 1 hr. NiO-doped Al2O3 sintered bodies had better sinterability than those of pure Al2O3 and 0.3 wt% NiO-doped Al2O3 had near theoretical density and dense microstructure.

• 한국주조공학회지
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• 제24권3호
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• pp.145-152
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• 2004

The eutectic Si in Al-8.5wt.%Si alloy was changed from large flake to fine lemellar(or fibrous) shape when the Sc amount in the Al-Si alloy reaches 0.2wt.%. The optimum amount of Sc for the best modification effect was 0.8wt.% and slight decrease of modification effect occurred over this value. The study on the distribution of the modifiers(Sr, Na, and Sc) and the measurement of the surface tension of the Al-8.5wt.%Si alloy melt added with Sr, Na, and Sc modifier, respectively, reveals that Sc modifies the eutectic Si by the decrease of surface tension, while Sr and Na modify the eutectic Si mainly by impurity induced twinning mechanism.