• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.59-59
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• 2000

Recently low resistance of bus line is required for large screen size TFT-LCD panels. As a result, lower resistance Al-alloy is currently reviewed extensively. The resistivity is required smaller than 10 $\mu$$\Omega$cm. In this paper, Al-Nd thin film were deposited on glass substrates by D.C. magnetron sputtering system under various condition. Its properties were characterized by SEM, AFM, XRD, 4-ping-probe. The optimal condition of Al-Nd was 12$0^{\circ}C$, 125W, 0.4Pa, 30sccm(Ar) and 35$0^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-Nd(2wt.%) was about 4 $\mu$$\Omega$cm. The minimum contact resistance of ITO/Nd was about 110$\mu$$\Omega$cm in the condition of 30$0^{\circ}C$, Ar 30 sccm. O2.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 춘계학술대회 논문요약집
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• pp.135-135
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• 2004

21세기 정보화시대에 미디어의 발전은 고저장밀도를 요구하는 정보저장 장치의 개발을 필요로 하게 되었고, 현재 정보저장 장치의 주류를 이루는 magnetic recording 방식에 의한 HDD는 향후 5년 이내에 초자성한계 (super paramagnetic limit)라는 물리적 현상에 직면하여 더 이상 발전이 어려울 깃이다 따라서 이러한 한계를 극복하기 위한 여러 기술 증 Scanning Probe Microscope (SPM)을 이용한 차세대 탐침형 정보저장 기술은 미세한 끝단 반경을 가지는 탐침과 표면의 상호작용을 이용하여 정보를 기록/재생하는 기술로써 수십 nm 크기의 bit를 형성하여 Tbit/in$^2$ 이상의 높은 저장밀도를 가질 수 있으므로 현재 가장 상용화될 가능성이 높다.(중략)

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2014년도 추계학술대회 논문집
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• pp.358-360
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• 2014

For the several decades, various nanomaterials are broadly used in industry and research. With the growth of nanotechnology, the study of nanotoxicity is being accelerated. Particularly, mercury ion is widely used in real life. Because the mercury is representative high toxic material, it is highly recommended to detect the mercury ion. In previous reported work, thymine-thymine mismatches (T-T) capture mercury ion and create very stable base pair ($T-Hg^{2+}-T$). Here, we performed the high sensitive sensing method for direct label free detection of mercury ions and DNA binding using Kelvin Probe Force Microscope (KPFM). In this method, 30 base pairs of thymine (T-30) is used for mercury specific DNA binding ($T-Hg^{2+}-T$). KPFM is able to detect the mercury ion because there is difference between bare T-30 DNA and mercury mediated DNA ($T-Hg^{2+}-T$).

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.104-108
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• 2015

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.

• 한국정밀공학회지
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• 제25권7호
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• pp.87-94
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• 2008

The displacement sensor using optical pickup head is presented. The measuring principle of optical pickup head in focusing direction is adopted to measure displacement. The preliminary tests were carried out to verify the feasibility of the optical pickup head as a displacement sensor and optical pickup head showed about $8\;{\mu}m$ measuring range and 10nm resolution. The methodology to expand measuring range is proposed and proved its validity. The proposed displacement sensors are applied to AFM(Atomic Force Microscope) probe head to measure the deflection of micro-cantilever.

• 반도체디스플레이기술학회지
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• 제16권1호
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• pp.112-115
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• 2017

ITO thin films were grown on the glass substrate under various oxygen gas flow and substrate temperature by using FTS (Facing Target Sputtering) system. To investigate properties of as-prepared films for transparent electrical devices, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM). As a results, all of prepared samples has high transmittance of over 80 % in the visible range (300-800 nm). Their resistivity increased as a function of oxygen gas flow and substrate temperature due to their crystal structure and oxygen defect in the films. As-prepared films have a resistivity of under $10^{-4}({\Omega}-cm)$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.663-666
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• 2000

Laser direct writing of micro-patterned copper lines has been achieved by pyrolytic decomposition of copper formate films (Cu(HCOO)$_2$$.$4H$_2$O), as a precursor, using a focused Ar$\^$+/ laser beam ($\lambda$= 514 nm) on PCB boards and glass substrates. The linewidth and thickness of the lines were investigated as a function of laser power and scan speed. The profiles of the lines were measured by scanning electron microscope (SEM), surface profiler (${\alpha}$-step) and atomic force microscopy (AFM). The electrical resistivities of the patterned lines were also investigated as a function of laser parameter using probe station and semiconductor analyzer. we compared resistivities of the patterned lines with that of the Cu bulk, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1553-1555
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• 2003

Coatings on glass with highly transparent conducting oxide films(TCOs) are performed mostly by using indium tin oxide(ITO). This Oxide material is very common for applications where both high electrical conductivity. Photovoltaic cells, transparent electrical heater, selective optical filter, and a optical transmittance are essential. In this study, ITO thin films were deposited on $SiO_2$/soda-line glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy(AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-800nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.299-302
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• 2000

RTD temperature sensor is a thermoresistor which uses the liner dependence of the resistance of the sensing material on the temperature, and has good stability and sensibility, so it can be used in highly precise temperature measurement. In this study RTD sensor was fabricated using Pt thin film. The Pt thin film was deposited on alumina using DC-Sputter, and annealed with various temperature. Through the experiments of XRD, AFM, 4-point probe, the surface structure of the thin film with annealing conditions and their effects on the electrical resistance were investigated. RTD with serpentine pattern was fabricated using Lift-off and resistance-temperature characteristics were studied.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.385-386
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• 2007

We prepared the Al doped ZnO coating Ag multilayer thin films on glass without substrate heating using FTS system. The structure of multilayer thin films has Al doped ZnO/Ag/Al doped ZnO(AZO/Ag/AZO). The thickness of top and bottom AZO thin films were fixed to 50 nm, respectively and controlled the thickness of Ag thin films with deposition time. As-doped multilayer thin films were prepared at 1mTorr and input power (DC) of 100W at room temperature. To investigate the film properties, we employed four-point probe, UVNIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM).