• Proceedings of the KWS Conference
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• 2009.11a
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• pp.75-75
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• 2009

연성회로기판은 일반적으로 절연체를 이루는 폴리이미드와 전도체를 이루는 구리로 구성되어 있다. 폴리이미드는 뛰어난 열적 화학적 안정성, 기계적 특성, 공정성 등의 장점으로 인해 연성회로기판의 절연체로서 제안되었지만 전도체를 이루는 구리와의 접합 특성이 우수하지 않기 때문에 많은 연구가 현재까지 진행되고 있고, 그 결과 연성회로기판의 접합 특성에 많은 개선이 이루어짐과 동시에 다양한 공정 방법이 제안되고 있다. 하지만 고온다습한 환경에서 사용될 경우 폴리이미드의 높은 흡습성과, 구리와 seed layer의 산화 문제로 인해 접합 특성이 저하된다는 단점 또한 가지고 있다. 따라서 본 연구를 통해 고온다습한 조건하에서 seed layer가 80Ni/20Cr 합금으로 구성된 연성회로기판의 seed layer의 두께와 시효시간으로 인해 발생하는 접합 신뢰성의 차이를 관찰하였다. 본 연구에서는 두께 $25{\mu}m$의 폴리이미드 위에 각각 100, 200, $300{\AA}$ 두께의 80Ni/20Cr의 합금 조성을 가지는 seed layer를 스퍼터링 공정을 통해 형성한 후 전해도금법을 이용하여 $8{\mu}m$ 두께의 구리 전도층을 형성하였다. 접합 특성 평가를 위해 ICP 규격에 따라 전도층 패턴을 폭 3.2mm, 길이 230mm로 시편을 제작하여 50.8mm/min의 이송 속도로 각 시편당 8회의 $90^{\circ}$ peel test를 실시하였다. 또한 $85^{\circ}C$/85% 항온항습 조건하에서 각각 24, 72, 120, 168시간 동안 시효 처리 후 같은 방법으로 연성회로기판의 접합 특성을 평가하였다. 파면의 형상과 조성을 분석하기 위해 SEM (Scanning electron microscope)과 EDS (Energy-dispersive X-ray spectroscopy)를 사용하였으며, 파면의 조도 측정을 위해 AFM (Atomic force microscope)을 사용하였다. 또한 파면의 잔여물 분석을 위해 EPMA (Energy probe microanalysis)를 사용하였고 계면의 화학적 결합상태를 분석하기 위해 XPS (X-ray photoelectron spectroscopy)를 통해 파면을 분석하였다.

• Journal of the Korean Magnetics Society
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• v.16 no.4
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• pp.221-227
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• 2006

We have synthesized uniform nanometer sized magnetite particles using chemical coprecipitation technique through a sonochemical method with surfactant such as oleic acid. Magnetite phase nanoparticles could be observed from X-ray diffraction. Magnetite nanoparticles is surface phase morphology and biopolymer-microspheres for Application Medical. Magnetite nanoparticles coated biopolymer. Atomic Force Microscope (AFM) was used to image the coated nanoparticles. Magnetic colloid suspensions containing particles with sodium oleate, chitosan and $\beta$-glucan have been prepared. The morphology of the magnetic biopolymer microsphere particles were characterized using optical microscope. Magnetic hysteresis measurement were performed using a superconducting quantum interference device (SQUID) magnetometer at room temperature to investigate the magnetic properties of the biopolymer microspheres and magnetite coated biopolymer including magnetite nanoparticles. Magnetic Resonance (MR) imaging was used to investigate biopolymer coated nanoparticles and biopolymer microspheres.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.406-406
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• 2010

일반적으로, 나노스케일의 MOS 소자에서는 게이트 절연체 두께가 감소함에 따라 tunneling effect의 증가로 인해 PID (plasma induced damage)로 인한 소자 특성 저하 현상을 감소하는 추세로 알려져 있다. 하지만 요즘 많이 사용되고 있는 high-k 게이트 절연체의 경우에는 오히려 더 많은 charge들이 trapping 되면서 PID가 오히려 더 심각해지는 현상이 나타나고 있다. 이러한 high-k 게이트 식각 시 현재는 주로 Hf-based wet etch나 dry etch가 사용되고 있지만 gate edge 영역에서 high-k 게이트 절연체의 undercut 현상이나 PID에 의한 소자특성 저하가 보고되고 있다. 본 연구에서는 이에 차세대 MOS 소자의 gate stack 구조중 issue화 되고 있는 metal gate 층과 gate dielectric 층의 식각공정에 각각 중성빔 식각과 중성빔 원자층 식각을 적용하여 전기적 손상 없이 원자레벨의 정확한 식각 조절을 해줄 수 있는 새로운 two step 식각 공정에 대한 연구를 진행하였다. 먼저 TiN metal gate 층의 식각을 위해 HBr과 $Cl_2$ 혼합가스를 사용한 중성빔 식각기술을 적용하여 100 eV 이하의 에너지 조건에서 하부층인 $HfO_2$와 거의 무한대의 식각 선택비를 얻었다. 하지만 100 eV 조건에서는 낮은 에너지에 의한 빔 스케터링으로 실제 패턴 식각시 etch foot이 발생되는 현상이 관찰되었으며, 이를 해결하기 위하여 먼저 높은 에너지로 식각을 진행하고 $HfO_2$와의 계면 근처에서 100 eV로 식각을 해주는 two step 방법을 사용하였다. 그 결과 anistropic 하고 하부층에 etch stop된 식각 형상을 관찰할 수 있었다. 다음으로 3.5nm의 매우 얇은 $HfO_2$ gate dielectric 층의 정확한 식각 깊이 조절을 위해 $BCl_3$와 Ar 가스를 이용한 중성빔 원자층 식각기술을 적용하여 $1.2\;{\AA}$/cycle의 단일막 식각 조건을 확립하고 약 30 cycle 공정시 3.5nm 두께의 $HfO_2$ 층이 완벽히 제거됨을 관찰할 수 있었다. 뿐만 아니라, vertical 한 식각 형상 및 향상된 표면 roughness를 transmission electron microscope(TEM)과 atomic force microscope (AFM)으로 관찰할 수 있었다. 이러한 중성빔 식각과 중성빔 원자층 식각기술이 결합된 새로운 gate recess 공정을 실제 MOSFET 소자에 적용하여 기존 식각 방법으로 제작된 소자 결과를 비교해 본 결과 gate leakage current가 약 one order 정도 개선되었음을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• The Journal of Korean Academy of Prosthodontics
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• v.50 no.4
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• pp.285-291
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• 2012

Purpose: This study was conducted to identify the surface characteristics of titanium discs coated with MS275/PLGA by electrospray and which is effective to mesenchymal stem cell proliferation. Materials and methods: We used anodized surface coated with PLGA as a control group and anodized surface coated with MS275 $0.5{\mu}M$, $1{\mu}M$, $1.5{\mu}M$ as test groups. To examine that the coating particles are nanometer sized, FE-SEM was used and AFM was utilized to determine the difference of coating surface roughness. We checked the mesenchymal stem cell proliferation by using MTT assay on $1^{st}$, $4^{th}$, $7^{th}$ days. Results: There was no significant difference between control groups and test groups in AFM results (P>.05). In MTT assay results, mesenchymal stem cell proliferation was increased with time, at $7^{th}$ day, cell viability on discs coated with $1.5{\mu}M$ MS275 was significantly higher than control group (P<.05). As SEM showed, the number of cells on all discs was increased and the morphology of cell attachment was also wider and closer with time. Conclusion: Titanium surface coated with MS275/PLGA showed significantly higher cell proliferation and the more density of MS275 was dispersed on titanium discs, the faster cells grew.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.18-21
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• 2007

The hexagonal $HoMn_{1-x}-Fe_xO_3$(x=0.00, 0.05) thin films were prepared using pulsed laser deposition(PLD) method on $Pt/Ti/SiO_2/Si$ substrate. The microstructure and magnetic properties have been studied by x-ray diffraction(XRD), atomic force microscopy (AFH), scanning electron microscope(SEM:), x-ray photoelectron spectroscopy(XPS), and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). From the analysis of the x-ray diffraction patterns, the crystal structure for all films was found to be a hexagonal($P6_3cm$), which was preferentially grown along(110) direction. The lattice constant $c_0$ of the film with x=0.05 was close to that of single crystal, whereas lattice constant $a_0$ with respect to single crystal shows a slight decrease. This difference of lattice parameters between film and single crystal was caused by the lattice mismatch between the film and $Pt/Ti/SiO_2/Si$ substrate. Conversion electron $M\"{o}ssbauer$ spectrum of $HoMn_{0.95}Fe_{0.05}O_3$ thin film shows an asymmetry doublet absorption ratio at room temperature, which is due to the oriented direction of crystallographic domains. This is corresponding with analysis of x-ray diffraction. The quadrupole splitting(${\Delta}E_Q$) at room temperature is found to be $1.62{\pm}0.01mm/s$. This large ${\Delta}E_Q$ was caused by asymmetry environment surrounding Fe ion.

• The Journal of Korean Academy of Prosthodontics
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• v.58 no.3
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• pp.207-216
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• 2020

Purpose: To compare the polishing characteristics and their influence on Candida albicans adhesion to the recently introduced polyetherketoneketone (PEKK) and the conventional polymethylmethacrylate (PMMA) denture resin material. Materials and methods: Specimens from PEKK (Group E) and PMMA (Group M) were made in dimensions of 8 mm in diameter and 2 mm in thickness. The specimens were further divided into sub-groups according to the extent of polishing (ER, MR: rough; EP, MP: polished, N = 12 each). The specimens were polished using polishing machine and SiC foil. ER and MR group specimens were polished with 600 grit SiC foil only. EP and MP groups were further polished with 800, 1,000, 1,200 grit SiC foils sequentially. To measure the surface roughness values (Sa) of specimens, atomic force microscope (AFM) was used and scanning electron microscope (SEM) observation under 1,000, and 20,000 magnifications was performed to investigate surface topography. The polished specimens were soaked in C. albicans suspension for 2 hours with shaking to promote adhesion. The attached C. albicans were detached from the surface with 10 times of pipetting. The suspension of detached C. albicans was performed by serial dilution to 10³ times, and the diluted suspensions were inoculated on Sabouraud dextrose agar plates using spread plate method. After incubating the plate for 48 hours, colony forming unit (CFU)/plate of C. albicans was counted. Statistical analysis was performed using one-way ANOVA and Tukey HSD test to confirm significant difference between the groups (α=.05). Results: Average Sa value was significantly higher in MR group compared to other groups (P<.05), meaning that additional polishing steps reduced surface roughness effectively only in the PMMA specimens. There was no significant difference in Sa values between MP and EP groups. In SEM images, PEKK specimens showed numerous spikes of abraded material protruding from the surface and this phenomenon was more significant in EP group. The mean CFU/plate value was the highest in EP group and this was significant when it was compared to MP group (P<.05) which was the lowest. Conclusion: Polishing PEKK using serial SiC abrasive foil may result in higher adhesion of C. albicans. In clinic, this should be considered carefully.

• Journal of Dental Rehabilitation and Applied Science
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• v.39 no.4
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• pp.195-203
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• 2023

Purpose: This study aimed to evaluate the influence of surface sealants on the surface roughness of composite resins. Materials and Methods: The study used microfilled composite resin (Metafil CX, Sun Medical Co.) and hybrid composite resin (Aelite^TM LS posterior, Bisco). Sixty specimens (8 mm in diameter and 4 mm in height) of each composite resin type were prepared and divided into 3 groups. Each specimen was ground with 600, 1000, and 2000-grit sandpaper. The Surface roughness (Ra) values were measured using a surface roughness tester (SJ-301, Mytutoyo) before and after surface sealant application. Surface sealants, BisCover^TM LV (Bisco), Optiguard^® (Kerr), and Seal-n-Shine^TM (Pulpdent), were applied to the specimens, as instructed and observed by scanning electron microscope (JSM-7500, JEOL) and atomic force microscope (MultiMode IV, Veeco Instruments). Results: Specimens ground with 600-grit sandpaper coated with surface sealants exhibited significantly lower Ra values than the untreated group (P < 0.05). Specimens ground with 1000 and 2000-grit sandpaper showed statistically no difference. There was no significant difference in surface roughness among BisCover^TM LV, Optiguard^®, and Seal-n-Shine^TM. SEM and AFM revealed remarkably decreased microdefects on the surfaces of composite resins after surface sealant application. Conclusion: Surface sealants can influence surface roughness when applied on the rough surface of composite resins but not on highly polished composite resins.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.336-340
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• 2015

Three different types of polycarbonate (PC)/graphene oxide (GO) composites using diphenyl carbonate as a monomer were fabricated by melt polymerization. Those were the PC/GO composite (PC/GO) using a twin extruder, in-situ PC/GO composite (PC/GO-cat.) using a catalyst, and in-situ PC/GO composite (PC/GO-COCl) using a GO-COCl treated by -COCl, Chemical structures of the composites were confirmed by C-H and C=O stretching peak at $3000cm^{-1}$ and $1750cm^{-1}$, respectively. The slope for the storage (G') versus loss (G") modulus plot decreased with an increase in the heterogeneous property of polymer melts. So we can check the GO dispersion of the PC/GO composites using by the slop for G'-G" plot. According to the G'- G" slopes for three different types of PC/GO composites, GO was well dispersed within PC matrix in case of PC/GO and PC/GO-cat.. It was also confirmed by atomic force microscope (AFM) photos. One of the reasons for the poor GO dispersion of PC/GO-COCl is branching and crosslinking processes occurred during polymerization, which was further confirmed by a plot for the complex modulus versus phase difference.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.183-183
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• 2015

Indium tin oxide (ITO)는 넓은 밴드갭을 가지는 n-type의 축퇴 반도체로 태양전지, 스마트윈도우, 터치 센서, organic light emitting displays (OLEDs) 등에 널리 적용된다. 최근 touch screen panels (TSPs)의 높은 전기적 특성 및 고해상도 요구에 따라 고품질 ITO 박막개발의 수요도 증가하는 추세이다. 지금까지 ITO 박막의 물성 및 기계적 특성에 관한 많은 연구가 진행되어 왔지만 ITO 초박막 에서의 근본적인 물성 변화에 대한 연구는 미흡한 실정이므로, 이러한 연구는 필수적이라 할 수 있다. ITO 초박막은 광학적 특성은 우수하나, 낮은 결정성으로 인해 전기적 특성이 나쁘다는 단점을 가지며, 이러한 ITO 박막의 결정성은 초기 박막 성장과정에 많은 영향을 받는다. ITO 박막의 초기성장과정은 핵이 생성된 후(nucleation), 각각의 위치에서 성장하게 되고(growth), 합쳐지면서(coalescence) 연속적인 막을 형성 하는데(continuous), 이러한 초기 박막 성장 과정 중에 핵 생성 밀도를 증가시키고 박막이 연속적으로 되는 두께를 감소시킨다면, 더욱 더 고품질의 ITO 초박막을 얻을 수 있을 것이다. 따라서, 본 연구에서는 박막 초기 형성 과정 중 섬들이 합체되는 두께를 최소화시키기 위하여 EMF(electromagnetic field strength) 시스템을 이용하였다. EMF 시스템은 DC 캐소드에 전자석 코일을 장착하여 전자기장을 추가로 부가한 것으로, 이를 이용할 경우 스퍼터 원자가 중성상태로 기판에 도달하는 것이 아니라, 이온화되어 Vp-Vf의 차이로 가속되어 추가적인 에너지를 공급받음으로써 기판표면상에서 확산을 촉진시키므로 박막이 연속적으로 되는 임계 두께를 감소시킬 수 있는 것으로 기대된다. 실험은 실온에서 DC 마그네트론 스퍼터링법을 이용하였으며, 유리기판위에 4, 6, 8, 10, 12, 20 nm의 두께로 ITO 박막을 제작하였다. 스퍼터링 파워는 150 W (3.29 W/cm3), 작업 압력은 0.13 Pa, 기판과 타깃 사이의 거리는 70 mm였다. 각각의 두께에서 EMF 파워 0, 5, 10, 15, 20, 25, 30 W로 인가하여 박막을 제작한 후, EMF 파워에 따른 ITO 박막의 초기 성장 과정중 표면상태를 AFM (atomic force microscope) 이미지를 통하여 관찰하였다. 또한, 두께 약 8 nm에서와 20 nm일 때의 전기적 특성 및 광학적 특성을 관찰하였으며, 두 박막 모두 EMF 파워 15 W를 인가하였을 때 그 특성이 가장 향상되는 것을 확인하였다. 이러한 결과를 통하여 박막은 초기 성장이 중요하므로, 매우 얇은 두께에서 좋은 특성을 가진 박막을 제작하여야 박막의 두께를 증가시켰을 때도 좋은 특성의 막을 얻을 수 있음을 알 수 있었다. 또한, EMF 파워를 증가시킴에 따라 자장강도를 증가시키는 것과 같은 효과 즉, 플라즈마 임피던스가 감소하는 효과를 내어 증착 중 고 에너지 입자 (Ar0, O-)에 의한 박막손상이 감소한 것으로 판단된다. 따라서 적정 EMF 파워 15 W를 인가하였을때 가장 물성이 좋은 ITO 박막을 얻을 수 있었다. 즉, EMF 시스템을 이용하여 저온 공정에서 결함농도가 적은 고품질의 ITO 초박막을 제작할 수 있었다.