• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.159-162
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• 2016

We studied an electrolyte-dielectric metal (EDM) device based on a Si₃N₄ layer-coated anodic aluminium oxide (AAO) template for chemical sensors. The AAO templates were fabricated using a two-step anodization procedure at 0℃ and 70 V in 0.3 M oxalic acid, after which the Si₃N₄ was deposited on them using plasma enhanced chemical vapor deposition (PECVD). The average pore size was approximately 106 nm and the depth of the AAO templates was 24.6 nm to 86.5 nm. The Si₃N₄ layer-coated AAO is more stable than a single AAO template.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.133-140
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• 2004

We carried out anodic aluminum oxide (AAO) on a Si and a sapphire substrate. For anodic oxidation of Al two types of specimens prepared were Al(0.5 $\mu\textrm{m}$)!Si and Al(0.5 $\mu\textrm{m}$)/Ti(0.1 $\mu\textrm{m}$)$SiO_2$(0.1 $\mu\textrm{m}$)/GaN(2 $\mu\textrm{m}$)/Sapphire. Surface morphology of Al film was analyzed depending on the deposition methods such as sputtering, thermal evaporation, and electron beam evaporation. Without conventional electron lithography, we obtained ordered nano-pattern of porous alumina by in- situ process. Electropolishing of Al layer was carried out to improve the surface morphology and evaluated. Two step anodizing was adopted for ordered regular array of AAO formation. The applied electric voltage was 40 V and oxalic acid was used as an electrolyte. The reference electrode was graphite. Through the optimization of process parameters such as electrolyte concentration, temperature, and process time, a regular array of AAO was formed on Si and sapphire substrate. In case of Si substrate the diameter of pore and distance between pores was 50 and 100 nm, respectively. In case of sapphire substrate, the diameter of pore and distance between pores was 40 and 80 nm, respectively

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.415-420
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• 2008

AAO films were fabricated on two kinds of substrates such as $Al/SiO_2/Si$ and Al/Ni/Ti/Si. To obtain well-aligned AAO film, we optimized process condition for buffer layer, electrolyte and voltage. In the case of oxalic acid, the AAO film with pore size of approximately 45 nm was obtained at voltage of 40 V, temperature of $10^{\circ}C$, oxalic acid of 0.3 M and widening time of 60 min. Then the thickness of barrier is less than 600 nm. In the case of sulfuric acid, the AAO film has pore size of 40 nm and barrier thickness of 400 nm with optimum conditions such as voltage of 25 V, temperature of $8^{\circ}C$, sulfuric acid of 0.3 M and widening time of 60 min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.419-420
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• 2009

The authors fabricated the nanostructural patterns on the surface of SiN antireflection layer of polycrystalline Si solar cell and the surface of crystalline Si wafer using anodic aluminum oxide (AAO) masks in an inductively coupled plasma(ICP) etching process. The AAO nanopattern mask has the hole size of about 70~80nm and an ave rage lattice constant of 100nm. The transferred nano-patterns were observed by the scanning electron microscope (SEM) and the enhancement of solar cell efficiency will be presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.106-107
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• 2007

We fabricated anodic aluminium oxides (AAO) on Si and sapphire substrates from the electrochemical reactions of thin AI films in an aqueous solution of oxalic acid. The thin AI films have deposited on Si and Sapphire substructure by using E-beam evaporation and thermal evaporation, respectively. The formation of AAO structures has investigated from FE-SEM measurement image and showed randomly distributed phase of nanoholes instead of the periodic lattice of photonic crystals. The AAO structure on sapphire shows the double layers of nanoholes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.250-250
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• 2009

The fabricated the nanostructural patterns on the surface of SiN antireflection layer of polycrystalline Si solar cell using anodic aluminum oxide (AAO) masks in an inductively coupled plasma(ICP) etching process. The AAO nanopattern mask has the hole size of about 70~75nm and lattice constant of 100~120nm. The transferred nano-patterns were observed by the scanning electron microscope (SEM). The voltage of patterned Si solar cell enhanced.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.600-600
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• 2013

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. Three different sizes of Cr nanodots (about 75.0, 57.6, and 35.8 nm) were obtained by controlling the height of the AAO template. Cr nanodot Schottky diodes showed a rectifying behavior with low SBHs of 0.17~0.20 eV and high ideality factors of 5.6~9.2 compared to those for the bulk diode. Also, Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters. These electrical behaviors can be explained by both Schottky barrier height (SBH) lowering effects and enhanced tunneling current due to the nanoscale size of the Schottky contact. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.10a
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• pp.41-42
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.372.2-372.2
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• 2016

Various nanobiosensors have been developed and extensively investigated. For their practical applications, however, the reproducibility and uniformity should be good enough and the mass-production should be possible. To fabricate anodized aluminium oxide (AAO)-based nanobiosesnor on wafer scale, we have designed and constructed a wafer-scale anodizing system. $1{\mu}m$-thick-aluminum is deposited on 4 inch SiO2/Si substrate and then anodized, resulting in uniform nanopores with an average pore diameter of about 65 nm. Furthermore, most AAO sensors constructed on this wafer provide capacitance values of 30 nF ~ 60 nF in PBS, demonstrating their uniformity.

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.137-140
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• 2007

The ordering of nanopores in AAO has been improved by using laser interference lithography. After growing Fe and Cu on this substrate in vacuum and removing AAO, Fe nanodots are fabricated. The nanopores in AAO and nanodots are ordered in one dimension following the prepatterning. It has been confirmed from the magnetic hysteresis loop that the Fe nanodots have vortex structure and the dipolar interaction is dominant among them.