• BMB Reports
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• v.41 no.12
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• pp.868-874
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• 2008

Neurofilaments (NFs) are neuronal intermediate filaments composed of light (NF-L), middle (NF-M), and heavy (NF-H) subunits. NF-L self-assembles into a "core" filament with which NF-M or NF-H co-assembles to form the neuronal intermediate filament. Recent reports show that point mutations of the NF-L gene result in Charcot-Marie-Tooth disease (CMT). However, the most recently described rod domain mutant of human NF-L (A148V) has not been characterized in cellular level. We cloned human NF-L and used it to engineer the A148V. In phenotypic analysis using SW13 cells, A148V mutation completely abolished filament formation despite of presence of NF-M. Moreover, A148V mutation reduced the levels of in vitro self-assembly using GST-NF-L (H/R) fusion protein whereas control (A296T) mutant did not affect the filament formation. These results suggest that alanine at position 148 is essentially required for NF-L self-assembly leading to subsequent filament formation in neuronal cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.148-151
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• 2017

This research concerns field rings for 3.3kV planar gate power insulated-gate bipolar transistors (IGBTs). We design an optimal field ring for a 3.3kV power IGBT and analyze its electrical characteristics according to field ring parameters. Based on this background, we obtained 3.3kV high breakdown voltage and a 2.9V on state voltage drop. To obtain high breakdown voltage, we confirmed that the field ring count was 23, and we obtained optimal parameters. The gap distance between field rings $13{\mu}m$ and the field ring width was $5{\mu}m$. This design technology will be adapted to field stop IGBTs and super junction IGBTs. The thyristor device for a power conversion switch will be replaced with a super high voltage power IGBT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.148-148
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• 2010

Measuring the a-IGZO TFTs with various temperatures was found to induce a threshold voltage shift and a change of the subthreshold gate voltage swing. Characteristic change is dependant on a material of the substrate at the temperature from $20^{\circ}C$ to $100^{\circ}C$. The threshold voltage was shifted to the left from -2.7V to -61V on SiO2/galss. But, as the temperature increases form $20^{\circ}C$ to $100^{\circ}C$. the threshold voltage was shifted to the right from 0.85V to 2.45V.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.213-217
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• 1996

HgS and HgS: Co crystals and films grown by the slow cooling and the chemical bath deposition method were used to measure their crystal structure and their optical absorption spectra. HgS and HgS: Co crystals are hexagonal structure with the lattice constant $a_0=4.155{\AA}$, $c_0=9.505{\AA}$ for HgS and $a_0=4.148{\AA}$, $c_0=9.462{\AA}$ for HgS and $a_0=4.135{\AA}$, $c_0=9.442{\AA}$ for HgS: Co, respectively. The optical energy gap of these crystals are given as 2.040 eV for HgS and 1.900 eV for HgS: Co, and the optical energy gap of these films were 2.440 eV for HgS and 1.940 eV for HgS: Co at room temperature, respectively.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.148-151
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• 2011

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.148.1-148.1
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• 2014

포항가속기연구소는 Dipole Magnet, Wiggler, Undulator 등 다양한 광원에서 발생되는 강한 방사광을 여러 연구에 이용하고 있다. Max-Planck POSTECH 분원용 타원편광 Undulator (이하, MPK-EPU)는 carbon의 흡수선을 포함하는 250 eV에서 시작하여, 1,500 eV~3,000 eV 에너지 영역의 방사광을 발생시켜 자성물질을 비롯한 다양한 이방성 물질의 연구를 수행하는데 활용할 예정이다. 현재, MPK-EPU용 진공용기의 기계가공, 화학세척, 용접 및 최종 초고진공 진공 달성을 위한 탈기체처리, NEG 활성화 작업등을 마무리하고 PLS-II 저장링 6A 구간에 설치 완료하였다. 이 논문에서는 MPK-EPU용 진공시스템의 제작 및 설치작업에 대한 전반적인 사항과 진공작업 및 그 결과를 발표하고자 한다.

• Korean Journal of Microbiology
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• v.45 no.2
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• pp.177-184
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• 2009

Three hundred lactic acid bacteria isolated from human feces were studied their probiotic characters to develop potential probiotics. The properties were tested on the basis of guideline for probiotic selection protocol such as tolerance for acid or bile salt, thermal stability, antimicrobial, anticancer cell, and antiviral activity. Strain Miny-148 was selected as a potential probiotic bacterium which showed resistance to low pH, bile salts and thermal stability. On the basis of fatty acid profiles and 16S rDNA sequences analysis, the strain was identified as Lactobacillus pentosus (similarity 99.9%). The strain, L. pentosus Miny-148, showed broad antimicrobial spectrum against E. coli O157:H7, Shigella flexneri, Bacillus anthracis, Staphylococcus aureus, E. coli, Vibrio cholerae, V. vulnificus, Salmonella typhimurium, and Methicillin-resistant S. aureus (MRSA). Cell-free culture supernatant of the strain also inhibited against the growth of HT-29 colon cancer cell and transmissible gastroenterits virus.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.148-152
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• 2009

Recent CMOS technology scaling has seriously eroded the bit-line noise immunity of register files due to the consequent increase in active bit-line leakage currents. To restore its noise immunity while maintaining performance, we propose and evaluate a $256{\times}40$-bit register file incorporating dual-$V_t$ bit-lines with a boosted gate overdrive voltage in 65 nm bulk CMOS technology. Simulation results show that the proposed bootsrapping scheme lowers leakage current by a factor of 450 without its performance penalty.

• Asian-Australasian Journal of Animal Sciences
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• v.2 no.3
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• pp.147-148
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• 1989

• Journal of Magnetics
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• v.20 no.2
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• pp.148-154
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• 2015

48-V ISG (Integrated Starter Generator) system has attracted attention to improve the fuel efficiency of ICE (Internal Combustion Engine) vehicle. One of the key components that significantly affects the cost and performance of the 48-V ISG system is the motor. In an ISG motor, the core and copper loss make the motor efficiency change because the motor has a broad driving operated range and more diverse driving modes compared with other motors. When designing an ISG motor, the selection of an electrical steel sheet is important, because the electrical steel sheet directly influences the efficiency of the motor. In this paper, the efficiency of the ISG motor, considering core loss and copper loss, is analyzed by testing different types of electrical steel sheets with respect to the driving speed range and mode. Using the results of a finite element method (FEM) analysis, a method to select the electrical steel sheet is proposed. This method considers the cost of the steel sheet and the efficiency according to driving mode frequency during the design process of the motor. A wound rotor synchronous machine (WRSM) was applied to the ISG motor in this study.