• Korean Journal of Materials Research
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• v.22 no.7
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• pp.352-357
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• 2012

$SnO_2$-mixed and Sn-doped $TiO_2$ nanoparticles were synthesized via a hydrothermal process. $SnO_2$-mixed $TiO_2$ nanoparticles prepared in a neutral condition consisted of anatase $TiO_2$ nanoparticles(diamond shape, ~25 nm) and cassiterite $SnO_2$ nanoparticles(spherical shape, ~10 nm). On the other hand, Sn-doped $TiO_2$ nanoparticles obtained under a high acidic condition showed a crystalline phase corresponding to rutile $TiO_2$. As the Sn content increased, the particle shape changed from rod-like(d~40 nm, 1~200 nm) to spherical(18 nm) with a decrease in the particle size. The peak shift in the XRD results and a change of the c-axis lattice parameter with the Sn content demonstrate that the $TiO_2$ in the rutile phase was doped with Sn. The photocatalytic activity of the $SnO_2$-mixed $TiO_2$ nanoparticles dramatically increased and then decreased when the $SnO_2$ content exceeded 4%. The increased photocatalytic activity is mainly attributed to the improved charge separation of the $TiO_2$ nanoparticles with the $SnO_2$. In the case of Sn-doped $TiO_2$ nanoparticles, the photocatalytic activity increased slightly with the Sn content due most likely to the larger energy bandgap caused by Sn-doping and the decrease in the particle size. The $SnO_2$-mixed $TiO_2$ nanoparticles generally exhibited higher photocatalytic activity than the Sn-doped $TiO_2$ nanoparticles. This was caused by the phase difference of $TiO_2$.

• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1084-1089
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• 2010

This study elucidates the formation mechanism of SnO plate observed during the precipitation reaction of a $SnCl_2$ aqueous solution. $Sn_{21}Cl_{16}(OH)_{14}O_6$ and $Sn_6O_4(OH)_4$ precipitates was formed at pH=3~5 and at pH=11, respectively. When the pH was in the range of 11.5~12.5, the $Sn_6O_4(OH)_4$ precipitates dissolved into $HSnO_2{^-}[Sn_6O_4(OH)_4+4OH^-={6HSnO_2{^-}+2H^+]$ and dissolved $HSnO_2{^-}$ ions reprecipitated to SnO plate $[HSnO_2{^-}+H^+=SnO+H_2O]$. The $Sn_6O_4(OH)_4$ precipitates completely transformed into SnO plate through a repeated process of dissolution-precipitation in the range of pH=11.5~12.5.

• KIISE Transactions on Computing Practices
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• v.24 no.3
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• pp.129-137
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• 2018

NVMe(Non-Volatile Memory Express) SSD(Solid State Drive) is a high-performance storage that makes use of flash memory as a storage cell, PCIe as an interface and NVMe as a protocol on the interface. It supports multiple I/O queues which makes it feasible to process parallel-I/Os on multi-core environments and to provide higher bandwidth than SATA SSDs. Hence, NVMe SSD is considered as a next generation-storage for data-center and cloud computing system. However, in the virtualization system, the performance of NVMe SSD is not fully utilized due to the bottleneck of the software I/O stack. Especially, when it uses I/O stack of the hypervisor or the host operating system like Xen and KVM, I/O performance degrades seriously due to doubled-I/O stack between host and virtual machine. In this paper, we propose a new I/O engine, called Direct-AIO (Direct-Asynchronous I/O) engine, that can access NVMe SSD directly for I/O performance improvements on QEMU emulator. We develop our proposed I/O engine and analyze I/O performance differences between the existed I/O engine and Direct-AIO engine.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1057-1060
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• 2001

By comparison of the experimental results in two systems of ZnO varistors, its appear that Sb$_2$O$_3$is the indispensable element for twinning in ZnO varistors, and the Zn$_{7}$Sb$_2$O$_{12}$ spinel acts as the nucleus to form twins. A1$_2$O$_3$is not the origin of twinning in ZnO varistor, but it was found that A1$_2$O$_3$could strengthen the twinning and form a deformation twinning by ZnA$_{12}$O$_4$-dragging and pinning effect. The inhibition ratios of grain growth and nonuniformity of two systems ZnO varistors increase with the increase of A1$_2$O$_3$content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as : twins increase the mobility viscosity of ZnO grain and grain boundary, and drag ZnO grain and liquid grain boundary during the sintering, then the grain growth is inhibited, and the microstructure becomes more uniform.orm.m.

• Journal of the Korean Chemical Society
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• v.18 no.4
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• pp.267-271
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• 1974

The tetradentate schiff base, N,N'-bis(salicylaldehyde)-ethylene diimine has been reacted with a series of Mo(IV), Mo(V), Mo(IV), and Mo(III) oxidation states to form new Complexes; $[MoO_2(C_{16}H_{14}O_2N_2)], (MoO(C_{16}H_{14}O_2N_2)]_2O, (Mo(SCN)(C_{16}H_{14}O_2N_2)]_2O, and (Mo(H_2O)(C_{16}H_{14}O_2N_2)]_2O.$ These complexes have hexa coordinated configurations and the mole ratio of these ions to the ligand was 1:1. These complexes have been identified by visible spectra, infrared specra, T.G.A., D.T.A., and elemental analysis.

• Journal of Life Science
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• v.23 no.4
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• pp.586-594
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• 2013

Post-translational O-GlcNAc modification (O-GlcNAcylation) of serine or threonine is a new protein modulation mechanism. In contrast to the classical glycosylation, O-GlcNAcylation occurs in a one-step transfer of O-GlcNAc on both nuclear and cytoplasmic proteins. In contrast to the general consensus that O-GlcNAc is a final modification, a recent paper (J Proteome Res. 2011 10:2725-2733) showed the presence of O-GlcNAc-P on a synaptic assembly protein AP180. This finding raises a fundamental question about its prevalence. To address this question, we used proteomics to identify those proteins that were phospho-signal enriched by GlcNAc kinase (NAGK). Comparison of pDsRed2-$NAGK_{WT}$-transfected HEK293T cell extract with pDsRed2-$NAGK_{D107A}$-transfected control culture revealed 15 phospho-signal increased spots. Excluding those spots that had no detectable amount of protein expression yielded 7 spots, which were selected for ID determination. Among these, two duplicate spots (two $HSP90{\beta}$ and two ENO1 spots) were shown to be O-GlcNAcylated, two (dUTP nucleotidohydrolase mitochondrial isoform 2, glutathione S-transferase P) were not known to be involved in O-GlcNAcylation, and one (heat shock protein gp96 precursor or grp94) was a glycoprotein. The increase in the phospho-levels of O-GlcNAc by NAGK strongly indicates that these proteins are phosphorylated on O-GlcNAc. Our present data support the idea that O-GlcNAc is not a terminal modification.

• Bulletin of the Korean Mathematical Society
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• v.30 no.1
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• pp.117-124
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• 1993

In this paper, we introduce a concept of quasi $O_{z}$ -spaces which generalizes that of $O_{z}$ -spaces. Indeed, a completely regular space X is a quasi $O_{z}$ -space if for any regular closed set A in X, there is a zero-set Z in X with A = c $l_{x}$ (in $t_{x}$ (Z)). We then show that X is a quasi $O_{z}$ -space iff every open subset of X is $Z^{#}$-embedded and that X is a quasi $O_{z}$ -spaces are left fitting with respect to covering maps. Observing that a quasi $O_{z}$ -space is an extremally disconnected iff it is a cloz-space, the minimal extremally disconnected cover, basically disconnected cover, quasi F-cover, and cloz-cover of a quasi $O_{z}$ -space X are all equivalent. Finally it is shown that a compactification Y of a quasi $O_{z}$ -space X is again a quasi $O_{z}$ -space iff X is $Z^{#}$-embedded in Y. For the terminology, we refer to [6].[6].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.190-197
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• 2002

In this thesis, ZnO varistors with various formulation, such as A∼E, were fabricated according to ceramic fabrication method. The microstructure, electrical properties, and surge characteristics of ZnO varistors were investigated according to ZnO varistors with various formulation. In the microstructure, A∼E\`s ZnO varistor ceramics sintered at 1130$\^{C}$ was consisted of ZnO grain(ZnO), spinel phase (Zn$\_$2.33/Sb$\_$0.67/O$\_$4/), Bi-rich phase(Bi$_2$O$_3$) and intergranuler phase, wholly. Lightning impulse residual voltage of A, B, C and E\`s ZnO varistors suited standard characteristics, below 12kV at current of 5kA. On the contrary, D\`s ZnO varistor exhibited high residual voltage as high reference voltage. In the accelerated aging test, leakage current and watt loss of B, C and D\`s ZnO varistors increases abruptly with stress time under the first a.c. stress(115$\^{C}$/3.213kV/300h). Consequently, C varistor exhibited a thermal run away. On the contrary, leakage current and watt loss of A and C\`s ZnO varistors which show low initial leakage current exhibited constant characteristics. After high current impulse test, A\`s ZnO varistor has broken the side of varistor but impulse current flowed. On the contrary, E\`s ZnO Varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After long duration impulse current test, E\`s ZnO varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After high current impulse test and long duration impulse current test, E\`s ZnO varistor exhibited very good characteristics which variation rate of residual voltage is 1.4% before and after test.

• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.210-220
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• 1989

The properties of the powder of Al2O3-15v/o ZrO2(＋3m/o Y2O3) system prepared by co-precipitation method at the pH values of 7, 9, 10 and 11 were investigated. Al2(SO4)3.18H2O, ZrOCl2.8H2O and YCl3.6H2O were used as starting materials and NH4OH as a precipitation agent. Zirconium hydroxide decreased the specific surface area of aluminum hydroxide of AlOOH type, while increased the specific surface area of aluminum hydroxide of Al(OH)3 type, and formed co-network structure of Al-O-Zr type with the aluminum hydroxides. The rate of transition to $\alpha$-Al2O3 from co-precipitated materials occurred in the order of 7≒10, 9 and 11 of pH values. Al2O3 and ZrO2 interacted to bring about coupled grain growth, and the growth of ZrO2 crystallite size rapidly occurred within $\theta$-Al2O3 matrix. Segregation did not occur in the system Al2O3-15v/o ZrO2(＋3m/o Y2O3) and Y2O3 acted as a stabilizer to ZrO2. The lattice strain of tetragonal ZrO2 was increased by the constraint effect of Al2O3 matrix.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.57-61
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• 2004

Zinc Oxide (ZnO) have the crystal structure of wurtzite which is semiconducting oxide with band gap energy of 3.3eV. $In_2O_3$-doped ZnO films were fabricated by electron beam evaporation at $400^{\circ}C$ and their characteristics were investigated. The content of $In_2O_3$ in ZnO films had a marked effect on the electrical properties of the films. As $In_2O_3$ content decreased. $In_2O_3$-doped ZnO films was converted amorphous into crystallized films and showed a better characteristics generally as a transparent conducting oxide. As $In_2O_3$-doped ZnO films were prepared by $In_2O_3$-doped ZnO pellet with 0.2at% of $In_2O_3$ content, the value of resistivity was about $6.0 {\times} 10^{-3} {\Omega}cm$. The transmittance was higher than 85% throughout the visible range.