• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1007-1010
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• 2004

We report crystallization of a-Si using XeCl excimer laser annealing [1] on the plastic substrate. We tried to obtain higher crystallinity as the effect of $CeO_2$ seed layer patterned. Also, we tried to control the direction of crystallization growth of silicon layer for lateral growth as the type of $CeO_2$ pattern. This crystallization method plays an important role in low temperature poly-Si (LTPS) [2] process and flexible display.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1267-1268
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• 2008

The two-shot SLS method has recently been successfully implemented in volume manufacturing of advanced LTPS-based LCDs. In this presentation, we discuss how the approach is also well suited for being implemented in high-throughput and high-yield manufacturing of large AMOLED displays on large glass substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1283-1286
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• 2006

A holding latch with level shifting function is proposed for power and cost effectiveness with low temperature polycrystalline silicon technology on the glass backplane. Layout area and power consumption of the proposed circuit are reduced by 10% and 52% compared with those of the typical structure which combines a static D-latch and a cross coupled level shifter for 2.2" qVGA panel, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.378-381
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• 2009

As a Joule-heat source, a conductive Mo layer was used to crystallize amorphous silicon for AMOLED backplanes. This Joule-heating induced crystallization (JIC) process could produce poly-Si having a grain size ranging from tens of nanometers to greater than several micrometers. Here, the blanket (single-shot whole-plane) crystallization could be achieved on the $2^{nd}$ and the $4^{th}$ generation glass substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1258-1261
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• 2004

Degradation phenomenon in the low-temperature polysilicon (LTPS) thin-film transistors (TFTs) with different junction structures was investigated. A gate-overlapped lightly doped drain (GOLDD) structure showed better hot-carrier stress (HCS) stability than a conventional LDD one. On the other hand, high drain current stress (HDCS) at $V_{gs}$ = $V_{ds}$ conditions caused much severe device degradation in the GOLDD structure because of its higher current level resulting in the higher applied power. It is suggested that self-heating-induced mobility degradation in the GOLDD TFFs be suppressed for using this structure in short-channel devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.911-913
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• 2008

In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (${\Delta}V_{TH}$) after $10^5$ P/E cycles.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1287-1290
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• 2006

A high speed analog buffer using polycrystalline silicon (poly-Si) thin film transistors (TFT) is proposed for 2.2-inch quarter video graphic adapter (qVGA) TFT-LCD panel. Simulation results show that the settling time of the proposed circuit is $10{\mu}sec$ in 2.2-inch qVGA and the power consumption of proposed analog buffer is $25{\mu}W$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.56-57
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• 2003

Sequential lateral solidification has recently become an option for manufacturing LTPS TFT LCDs owing to the availability of production equipment. Compared to the currently established ELA crystallization method, it is characterized by its low running costs and the high quality microstructures that can be obtained. In this presentation, we will review the production-related developments as well as elaborate on recent research activities that deal with a number of crystallization schemes that can be beneficial for future active-matrix display products.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.945-947
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• 2009

We developed a new laser irradiation (BLDA: Blue Multi-Laser-Diode Annealing) system. The system forms the uniform line beam, which is constructed by 48 pieces of semiconductor lasers. This new system has achieved high laser output stability and the highly accurate beam shape by adopting a reliable laser control, the auto-focus control in addition to an original laser photosynthesis technology and the beam homogenizing technology. It was confirmed to crystallize the Si films effectively with good quality.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1075-1078
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• 2007

Negative Bias Temperature Instability (NBTI) in Eximer Laser Annealing (ELA) based Low Temperature polysilicon (LTPS) Thin-Film Transistors (TFT) was investigated. Even though NBTI is generally appeared in devices with thin gate oxide, the TFT with gate oxide thickness of 120 nm, relatively thick, also showed NBTI effect and dynamic NBTI effect is dependent on operational frequency.