• 제목/요약/키워드: A Differential Amplifier

검색결과 229건 처리시간 0.027초

An MMIC Broadband Image Rejection Downconverter Using an InGaP/GaAs HBT Process for X-band Application

  • Lee Jei-Young;Lee Young-Ho;Kennedy Gary P.;Kim Nam-Young
    • Journal of electromagnetic engineering and science
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    • 제6권1호
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    • pp.18-23
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    • 2006
  • In this paper, we demonstrate a fully integrated X-band image rejection down converter, which was developed using InGaP/GaAs HBT MMIC technology, consists of two single-balanced mixers, a differential buffer amplifier, a differential YCO, an LO quadratue generator, a three-stage polyphase filter, and a differential intermediate frequency(IF) amplifier. The X-band image rejection downconverter yields an image rejection ratio of over 25 dB, a conversion gain of over 2.5 dB, and an output-referred 1-dB compression power$(P_{1dB,OUT})$ of - 10 dBm. This downconverter achieves broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 60 mA from a 3-V supply.

1.9-GHz CMOS Power Amplifier using Adaptive Biasing Technique at AC Ground

  • Kang, Inseong;Yoo, Jinho;Park, Changkun
    • Journal of information and communication convergence engineering
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    • 제17권4호
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    • pp.285-289
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    • 2019
  • A 1.9-GHz linear CMOS power amplifier is presented. An adaptive bias circuit (ABC) that utilizes an AC ground to detect the power level of the input signal is proposed to enhance the linearity and efficiency of the power amplifier. The ABC utilizes the second harmonic component as the input to mitigate the distortion of the fundamental signal. The input power level of the ABC was detected at the AC ground located at the VDD node of the power amplifier. The output of the ABC was fed into the inputs of the power stage. The input signal distortion was mitigated by detecting the input power level at the AC ground. The power amplifier was designed using a 180 nm RFCMOS process to evaluate the feasibility of the application of the proposed ABC in the power amplifier. The measured output power and power-added efficiency were improved by 1.7 dB and 2.9%, respectively.

-60dB THD, 32ohm load, 0.7Vrms 출력의 저전력 CMOS class AB Stereo Audio Amplifier 설계 (Design of -60dB THD, 32ohm Load, 0.7Vrms Output Low Power CMOS class AB Stereo Audio Amplifier)

  • 김지훈;박상훈;박홍준;김태호;정선엽
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.905-908
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    • 2005
  • 본 논문에서는 class AB opamp 를 채용한 384kHz differential PWM 신호를 입력으로 하는 2-channel stereo audio amplifier 블록을 공급전압 3.3V 조건에서 SMIC 0.18um thick oxide 기술을 이용하여 설계한다. 여기서 class AB opamp 는 공정 변화에 따른 quiescent current가 변하는 것을 최소화하기 위하여 adaptive load 를 사용하며, 전체적으로는 3 차 Butterworth lowpass filter 와 differential-to-single converter 로 구성된 2 개의 audio amplifier 와 출력전압이 ${\frac{1}{2}}Vdd$ 인 common output 블록으로 구성된다. 이러한 설계를 통하여 32ohm 의 저항 load 를 구동할 수 있는 -60dB THD, 전체 quiescent current 2mA 대인 CMOS class AB stereo audio amplifier 를 구현하였다.

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6.78MHz 저 왜율 Class E 증폭기의 설계 (Design of Low Distortion Class E Amplifier with Frequency of 6.78MHz)

  • 윤진;정세교
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2020년도 전력전자학술대회
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    • pp.459-460
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    • 2020
  • The design of a low distortion class E amplifier with a frequency of 6.78MHz for a wireless power transfer is presented. The amplifier with a differential out is designed to reduce the harmonics of the output current. The harmonic characteristics of various types of the class E amplifiers are compared through the simulation study.

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65-nm CMOS 공정을 이용한 94 GHz 고이득 차동 저잡음 증폭기 설계 (Design of 94-GHz High-Gain Differential Low-Noise Amplifier Using 65-nm CMOS)

  • 서현우;박재현;김준성;김병성
    • 한국전자파학회논문지
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    • 제29권5호
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    • pp.393-396
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    • 2018
  • 본 논문은 65-nm 저전력 CMOS 공정을 이용해 94 GHz 대역 저잡음 증폭기를 설계한 결과를 제시한다. 설계한 저잡음 증폭기는 4단 차동 공통소스 구조를 가지며, 트랜스포머를 사용해 각 단 및 입출력 임피던스 정합 회로를 구성했다. 제작한 저잡음 증폭기는 94 GHz에서 최대 전력 이득 25 dB을 보이며, 3-dB 대역폭은 5.5 GHz이다. 제작한 칩의 면적은 패드를 포함해 $0.3mm^2$이며, 1.2 V 공급 전원에서 46 mW의 전력을 소비한다.

링거액 소진 감지를 위한 정전용량방식의 차동센서 설계 및 제작 (Design & implementation of differential sensor using electrostatic capacitance method for detecting Ringer's solution exhaustion)

  • 심요섭;김청월
    • 센서학회지
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    • 제19권5호
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    • pp.391-397
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    • 2010
  • This paper proposes a differential structure sensor for detecting Ringer's solution exhaustion, in which three C-type electrodes of 10 mm width are disposed on a ringer hose at a distance of 5 mm each other in the direction of Ringer's solution flow. In the center of middle electrode, two capacitances are formed at the proposed sensor. When ringer hose is filled with Ringer's solution, there is no difference between two capacitances. But capacitance difference exist under the Ringer's solution shortage, because the shortage causes the hose filled with air from the top position electrode. The capacitance difference got to maximum 1.81 pF, when air was filled between top and middle electrode and the last of hose was filled with 10 % dextrose injection Ringer's solution. The capacitance difference varied with hose-wraparound coverage of electrodes as well as the width of them. For hose-wraparound electrode coverage of 90 % and 70 %, the maximum capacitance difference was 1.81 pF and 1.56 pF, respectively. A differential charge amplifier converted the capacitance difference to electric signal, and minimized electrodes' adhering problem and external noise coupling problem.

저잡음 뇌파 전치 증폭기의 개발 (The Development of Low-noise EEG Preamplifier)

  • 유선국;김남현;김선호;송재성;안창범
    • 대한의용생체공학회:학술대회논문집
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    • 대한의용생체공학회 1995년도 춘계학술대회
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    • pp.68-70
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    • 1995
  • A low-noise pre-amplifier is developed for use in Topographic Brain Mapping system. It consists of signal generator, signal amplifier with a impedance converter, shield driver, body driver, differential amplifier, and isolation amplifier. Pre-amplifier circuit is designed with the concept of isolation and active body and shield driver. This amplifier shows the good noise behavior, high CMRR, high input impedance, low leakage current and high IMRR.

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PCS 용 CMOS 전력 증폭기 (CMOS Power Amplifier for PCS)

  • 윤영승;주리아;손영찬;유상대
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 추계종합학술대회 논문집
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    • pp.1163-1166
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    • 1999
  • In this paper, A CMOS power amplifier for PCS is designed with 0.65-$\mu\textrm{m}$ CMOS technology. Differential cascode structure is used which has good reverse isolation and wide voltage swing. This amplifier circuits consist of three stages which are power amplification stage, driver stage and power control stage. We obtain output power of 30 ㏈m, IMD3 of -31㏈c and efficiency of 30 % at input power of 4 ㏈m.

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65-nm CMOS 공정을 이용한 V-Band 차동 저잡음 증폭기 설계 (Design of V-Band Differential Low Noise Amplifier Using 65-nm CMOS)

  • 김동욱;서현우;김준성;김병성
    • 한국전자파학회논문지
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    • 제28권10호
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    • pp.832-835
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    • 2017
  • 본 논문은 고속 무선 데이터 통신을 위한 V-band 차동 저잡음 증폭기를 65-nm CMOS 공정을 이용하여 설계한 결과를 제시한다. 설계한 저잡음 증폭기는 3단 공통소스 구조이며, MOS 커패시터를 이용한 커패시턴스 중화 기법을 적용하였고, 트랜스포머를 이용하여 각 단의 임피던스 정합을 구현하였다. 제작한 저잡음 증폭기는 63 GHz에서 최대 이득 23 dB을 보이며, 3 dB 대역폭은 6 GHz이다. 제작한 칩의 크기는 패드를 포함하여 $0.3mm^2$이며, 1.2 V 공급 전원에서 32 mW의 전력을 소비한다.

12비트 100 MS/s로 동작하는 S/H(샘플 앤 홀드)증폭기 설계 (A Design of 12-bit 100 MS/s Sample and Hold Amplifier)

  • 허예선;임신일
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.133-136
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    • 2002
  • This paper discusses the design of a sample-and -hold amplifier(SHA) that has a 12-bit resolution with a 100 MS/s speed. The sample-and-hold amplifier uses the open-loop architecture with hold-mode feedthrough cancellation for high accuracy and high sampling speed. The designed SHA is composed of input buffer, sampling switch, and output buffer with additional amplifier for offset cancellation Hard Ware. The input buffer is implemented with folded-cascode type operational transconductance Amplifier(OTA), and sampling switch is implemented with switched source follower(SSF). A spurious free dynamic range (SFDR) of this circuit is 72.6 dB al 100 MS/s. Input signal dynamic range is 1 Vpp differential. Power consumption is 65 ㎽.

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