• Korean Journal of Veterinary Service
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• 제34권3호
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• pp.195-200
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• 2011

Swine influenza is an acute respiratory disease prevalent in pig-growing areas all around the world and plays the roles of an intermediate host to be transmitted to mammals including human beings through a genetic recombination with the avian influenza virus. Recognizing that people could be contracted with swine influenza, this study set out to investigate the seroprevalence of individual and multiple infections with two subtypes (H1N1 and H3N2) of the swine influenza virus in pig farms in the Gyeongnam region according to age, area, and season, as well as to provide basic data for the prevention and control of swine influenza. Used in the study were total 904 swine sera that were not vaccinated against the influenza gathered from the pig farms in the Gyeongnam region from November, 2009 to October, 2010. HerdChek SIV (H1N1, H3N2) ELISA kit (IDEXX Laboratories, USA) was used for antibody testing against swine influenza. The test results show that 370 sera (40.9%) were infected with either H1N1 or H3N2 with 37.3% (337 sera) being contracted with H1N1, 13.1% (118 sera) with H3N2, and 9.4% (85) with both H1N1 and H3N2.

• Korean Journal of Materials Research
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• 제28권4호
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

• Korean Journal of Veterinary Research
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• 제47권3호
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• pp.273-279
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• 2007

Swine influenza is an acute, infectious respiratory disease caused by type A influenza viruses in pigs. In the previous studies, serological surveys have indicated the presence of H3N2 swine influenza virus (SIV) since 1995 in Korea. And the percentage of the antibody-positive rate was 39.12% in the survey determining the prevalence of H1N1 SIV antibodies in 2002. The purpose of this study was therefore to investigate the sero-prevalence of SIV regard to the age of the pig and the season between June 2004 and May 2005. In this study, a total of 932 sera were used. These sera were randomly selected from blood samples, which were submitted to Department of Veterinary Pathology, Kangwon National University and Department of Veterinary Virology, Seoul National University from June 2004 to May 2005. These sera have been tested by ELISA test kit (IDEXX Lab, USA) for the SIV H3N2, H1N1 respectively. SAS version 9.1 was used for the statistical analysis based on the age of the pig and the season. The overall sero-prevalence of the antibody against H3N2 SIV was 20.82% (194/932). The overall sero-prevalence of the antibody against H1N1 SIV was 37.23% (347/932). The overall dual sero-prevalence of the antibody against H3N2 and H1N1 SIV was 10.62% (99/932). H3N2 has significant difference in statistically regarding the age of the pig and the season (p<0.0001). H1N1 has significant difference in statistically regarding the age of the pig (p<0.0001) but has not significant difference in statistically regarding the season (p=0.5882).

• Bulletin of the Korean Chemical Society
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• 제19권5호
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• pp.565-568
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• 1998

Novel mononuclear metal complexes with the formula $[M(Ph_2PC_6H_4NC_3H_6NC_6H_4PPh_2)]$ (M=Pd (1); M=Pt (2)) were obtained when N,N'-bis[2'-(diphenylphosphino)phenyl]propane-1,3-diamine, I was mixed with cisdichlorobis(diethylsulfide)palladium and platinum in the presence of NEt3. Two mononuclear metal compounds with the fomula [M(Ph2PC6H4NH)(SEt2)Cl] (M=Pd (3); M=Pt (4)) were synthesized from $M(SEt_2)2Cl_2$ and N-(2'-diphenylphosphinophenyl)-4-amino-1,1,1,5,5, 5-hexafluoro-3-penten-2-one, II by the elimination reaction of hexafluoro pentenone. The X-ray single crystal structures of 1 and 4 are described. X-ray single crystal diffraction analyses reveal that compound 1 is a mononuclear palladium compound with P,N,N,P-coordination mode and 4 is a mononuclear platinum compound with P,N-coordination mode.

• Journal of the Korean Chemical Society
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• 제61권6호
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• pp.328-338
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• 2017

The density functional theory(DFT) and ab initio calculations have been applied to investigate hydrogen interaction of $H_2O_3(H_2O)_n$ clusters(n=1-5). The structures, IR spectra, and H-bonding energies are calculated at various levels of theory. The $trans-H_2O_3$ monomer is predicted to be thermodynamically more stable than cis form at the CCSD(T)/cc-pVTZ level of theory. For clusters, the geometries are optimized at the MP2/cc-pVTZ level of theory. The binding energy of $H_2O_3-H_2O$ cluster is predicted to be -6.39 kcal/mol at the CCSD(T)//MP2/cc-pVTZ level of theory after zero-point vibrational energy (ZPVE) and basis set superposition error (BSSE) correction. This result implies that $H_2O_3$ is a stronger proton donor(acid) than either $H_2O$ or $H_2O_2$. The average binding energies per $H_2O$ are predicted to be 8.25 kcal/mol for n=2, 7.22 kcal/mol for n=3, 8.50 kcal/mol for n=4, and 8.16 kcal/mol for n=5.

• Korean Journal of Crystallography
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• 제10권2호
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• pp.105-109
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• 1999

Ar 기류 하에서 Re(N-C6H3-2,6-i-Pr2)2Cl3(py) (1)과 propionaldehyde (C2H5CHO)가 반응하여 생성된 혼합물에서, [cis-ReCl4(py)(N-C6H3-2,6-i-Pr2)·(NH2-C6H3-2,6-i-Pr2)] (2)가 분리되었다. 이 화합물의 구조가 X-ray 회절법으로 규명되었다. 착물 2의 결정학 자료: 단사정계 공간군 P21/n, a=11.555(1) Å, b=27.066(3) Å, c=11.881(1) Å, β=117.991(8)°, Z=4, R(wR2)=0.0332(0.0851.

• Journal of the Korean Chemical Society
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• 제20권1호
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• pp.19-34
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• 1976

The crystal structure of sodium sulfisoxazole hexahydrate, $C_{11}H_{12}N_3O_3SNa{\cdot}6H_2O$,has been determined by X-ray diffraction method. The compound crystallizes in the monoclinic space group $$P2_1}c$$ with a = 15.68(3), b = 7.70(2), c = 17.94(4)${\AA}$, ${\beta}$ = $118(2)^{\circ}$ and Z = 4. A total of 1717 observed reflections were collected by the Weissenberg method with $CuK{\alpha}$ radiation. Structure was solved by heavy atom method and refined by block-diagonal least-squares methods to the R value of 0.14. The conformational angle formed by the S-C(l) bond with that of N(2)-C(7), when the projection in taken along the S-N(2), is $73^{\circ}.$ The benzene ring is planar and makes an angle of $60^{\circ}$ with the plane of the isoxazole ring, which is also planar. The sodium atom has a distorted octahedral coordination of N(l) and five oxygen atoms from hydrate molecules. Sodium sulfisoxazole hexahydrate shows fourteen different hydrogen bondings in the crystal. These are six $O-H{\cdots}O-H bonds, three $O-H{\cdots}O$ bonds, two $O-N{\cdots}N,$ one $N-H{\cdots}O,O-H{\cdots}N,N-H{\cdots}O-H$ bond, with the distances in the range of 2.71 to $3.04{\AA}.$.

• Korean Journal of Crystallography
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• 제11권1호
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• pp.46-51
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• 2000

The molecular structures of 2-SC₄H₃CH=NN(H)C/sub 6/H/sub 5/(C/sub 11/H/sub 10/N₂S) and (GaMe₂)₂(2-SC₄H₃CH=NNC/sub 6/H/sub 5/)₂(C/sub 26/H/sub 30/Ga₂N₄S₂) have been determined by X-ray diffraction. Crystallographic data for 2-SC₄H₃CH=NN(H)C/sub 6/H/sub 5/:orthorhombic space group P2₁2₁2₁, a=6.108(1)Å, b=7.593(1)Å, c=22.356(2)Å, V=1037.1(3)ų, Z=4, R=0.0613. Crystallographic data for (GaMe₂)₂(2-SC₄H₃CH=NNC/sub 6/H/sub 5/)₂:monoclinic space group P2₁/n, a=15.996(2) Å, c=9.879(3)Å, β=100.07.(2)°, V=2764.599)ų, Z=4, R=0.0503.

• Journal of the Korean Ceramic Society
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• 제24권1호
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• pp.23-32
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• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제7권3호
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• pp.468-473
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C∼600^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1 ∼ 1.5 MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Meta1/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectric.