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Preferred masking levels of water sounds according to various noise background levels in small scale open plan offices (소규모 개방형 사무실 배경 소음 레벨에 따른 최적 물소리 마스킹 레벨)

  • Tae-Hui Kim;Sang-Hyeon Lee;Chae-Hyun Yoon;Hyo-Won Sim;Joo-Young Hong
    • The Journal of the Acoustical Society of Korea
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    • v.42 no.6
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    • pp.617-626
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    • 2023
  • This study aims to investigate the preferred sound level of water sound for various levels of open-plan-office noise regarding soundscape quality and speech privacy. And assessment of the work efficiency of the water sound. For the laboratory experiment, office noise was recorded using a binaural microphone in a real open-plan office. For the assessment of the soundscape quality and speech privacy, Overall Soundscape Quality (OSQ) and Listening Difficulty (LD) were evaluated under three different sound levels (55 dBA, 60 dBA, and 65 dBA) and five different signal-to-noise ratios (SNR -10 dB, -5 dB, 0 dB, +5 dB, and +10 dB). After the evaluation, the preferred SNR was proposed according to OSQ and LD. For the assessment of to work efficiency of water sound, this study evaluated the cognitive performance of both of the condition noise only and combine the water sound with office noise. The results showed that LD increased as the water sound level increased, but OSQ decreased. When the water sound level was more than the office noise level, the OSQ decreased from noise only. Therefore, considering OSQ and LD, the preferred SNR of water sound was -5 dB for all noise levels. At the preferred level of water sound, the cognitive performance results were shown to decrease at 55 dBA compared to noise only, but at 60 dBA and 65 dBA combine the water sound results were increased than the noise only.

Influences of Oxygen Partial Pressure and Annealing Time on Microstructure and Magnetic Properties of Hexagonal Barium-Ferrite Thin Films (Hexagonal Barium-Ferrite 박막의 미세구조와 자기적 특성에 미치는 산소분압과 열처리 시간의 영향)

  • 김웅수;김동현;남인탁;홍양기
    • Journal of the Korean Magnetics Society
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    • v.10 no.6
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    • pp.285-290
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    • 2000
  • BaM thin films were prepared by using RF magnetron sputtering system at room temperature, and then successively annealed to crystallize at 850$\^{C}$ using RTA. The structure and magnetic properties of post-annealed BaM films have been investigated using XRD and VSM, respectively. The dependences of partial oxygen gas pressure (Po2) on the characteristics of BaM films were investigated. Although mixing of spinel and BaM phase only was identified in 0.5 mTorr oxygen partial pressure, BaM phase only was identified in the range from 1 to 3 mTorr oxygen partial pressure. The saturation magnetization and perpendicular coercivity of BaM thin films decreases with increase of Po2 in the range of Pot between 0.5 and 3 mTorr.

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Fabrication and dielectric properties of $LaAlO_3-BaZrO_3$ perovskites ($LaAlO_3-BaZrO_3$계 perovskites의 제조 및 유전특성)

  • Lee, So-Hee;Kim, Shin;Shin, Hyun-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.325-325
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    • 2007
  • The perovskites in the $LaAlO_3-BaZrO_3$ system (i.e., $(1-x)LaAlO_3-xBaZrO_3$ were fabricated by a solid state reaction and their dielectric properties were investigated. For the compositions of x=0.1~0.9, the mixture of $LaAlO_3$ with a rhombohedral structure and $BaZrO_3$ with a cubic was observed when the sintering was conducted at $1500^{\circ}C$, indicating that the solubility of constituent elements was very low and a narrow solid solution region might exist. The large difference of ionic radii between $La^{3+}$ ion (0.136nm, C.N.=12) and $Ba^{2+}$ ion (0.161nm) or $Al^{3+}$ ion (0.0535nm, C.N.=6) and $Zr^{4+}$ ion (0.072nm) might hinder the mutual substitution. Within the compositions of x=0~0.7, the dielectric constant of the mixture increased with the amount of $BaZrO_3$, i.e., x value, which was in good agreement with the logarithmic mixing rule (In $_{r,i}={\Sigma}v_iln\;_{r,i}$). The increase in $BaZrO_3$ doping decreased $Q{\times}f$ value significantly due to the low $Q{\times}f$ value of $BaZrO_3$ itself, a poor microstructure of the mixture with an increased grain boundary area per volume, and defects in the cation and oxygen sub-lattices which were respectively caused by the evaporation of barium during the sintering process and the substitution of Ba on La-site or Al on Zr-site.

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The Photoluminance Properties of Blue Phosphor with Chemical Composition in BaO-MgO-$Al_2O_3$ System (BaO-MgO-$Al_2O_3$계에서 조성변화에 따른 청색 형광체의 발광특성)

  • Park, Sang-Hyun;Kong, Myung-Sun;Lee, Rhim-Youl
    • Korean Journal of Materials Research
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    • v.8 no.6
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    • pp.520-525
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    • 1998
  • The optical properties with chemical composition change in BaO- MgO-$AI_2O_3$, system activated by divalent Eu ion were investigated under 254nm ultraviolet(UV) and 147nm vacuum ultraviolet(VUV). These phosphors emitted a blue light at a dominant wavelength of $\lambda$=445nm under UV and VUV irradiations. It was found that the brightness of $BaMgAI_{14}O_{23}$ phosphor increased with Eu concentration up to 10% under UV but it showed a maximum emitting intensity at 5% Eu for VUV. The emitting intensity of blue color of $BaMgAl_{10}O_{l7}$ phosphor was higher than that of $BaMgAI_{14}O_{23}$for both excitation. A further improvement in brightness was obtained for $Ba_{o.9}Ca_{0.1}MaAl_{14}O_{23}$ and $Ba_{0.9}Sr_{0.1}MgAl_{10}O_{17}$ phosphor synthesized by the substition of $Ba^{+2}$ ion with O.lmole of $Ca^{+2}$ or $Sr^{+2}$ ions in $BaMgAl_{IO}O_{17}$: Eu phosphor.

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Growth and optical conductivity properties for BaIn2S4 single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)법에 의한 BaIn2S4 단결정 박막 성장과 광전도 특성)

  • Jeong, Kyunga;Hong, Kwangjoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.25 no.5
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    • pp.173-181
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    • 2015
  • A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

Enhanced Superconducting Properties in Melt-processed (Y0.33Sm0.33Nd0.33) Ba2Cu3Oy Oxides in Air

  • Kim, So-Jung;Park, Jong-Kuk
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.6
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    • pp.284-288
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    • 2005
  • We have systematically studied the superconducting properties and flux pinning enhancement of $(Y_{0.33}Sm_{0.33}Nd_{0.33})\;Ba_2Cu_3O_y$ [(YSN)-123] composite oxides by melt growth process in air. A sample prepared by this method showed well-textured microstructure, and $(Y_{0.33}Sm_{0.33}Nd_{0.33})\;BaCuO_5$ [(YSN)211] nonsuperconducting particles were uniformly dispersed in large (YSN) 123 superconducting matrix. The sample showed a sharp superconducting transition at 91 K. The magnetization measurements of the (YSN)-123 sample exhibited the enhanced flux pinning, compared with $YBa_2Cu_3O_y$ (Y-123) sample without Sm and Nd. Critical current densities of (YSN)-123 sample was $2.5{\times}10^4 A/cm^2$ at 2 T and 77 K.

Growth Properties of Tungsten-Bronze Sr1-xBaxNb2O6 Single Crystals (텅스텐 브론즈 Sr1-xBaxNb2O6 단결정의 성장 특성)

  • Joo, Gi-Tae;Kang, Bonghoon
    • Korean Journal of Materials Research
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    • v.22 no.12
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    • pp.711-716
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    • 2012
  • Tungsten bronze structure $Sr_{1-x}Ba_xNb_2O_6$ (SBN) single crystals were grown primarily using the Czochralski method, in which several difficulties were encountered: striation formation and diameter control. Striation formation occurred mainly because of crystal rotation in an asymmetric thermal field and unsteady melt convection driven by thermal buoyancy forces. To optimize the growth conditions, bulk SBN crystals were grown in a furnace with resistance heating elements. The zone of $O_2$ atmosphere for crystal growth is 9.0 cm and the difference of temperature between the melt and the top is $70^{\circ}C$. According to the growth conditions of the rotation rate, grown SBN became either polycrystalline or composed of single crystals. In the case of as-grown $Sr_{1-x}Ba_xNb_2O_6$ (x = 0.4; 60SBN) single crystals, the color of the crystals was transparent yellowish and the growth axis was the c-axis. The facets of the crystals were of various shapes. The length and diameter of the single crystals was 50~70 mm and 5~10 mm, respectively. Tungsten bronze SBN growth is affected by the temperature profile and the atmosphere of the growing zone. The thermal expansion coefficients on heating and on cooling of the grown SBN single crystals were not matched. These coefficients were thought to influence the phase transition phenomena of SBN.

Luminescence Properties of Ba3Si6O12N2:Eu2+ Green Phosphor

  • Luong, Van Duong;Doan, Dinh Phuong;Lee, Hong-Ro
    • Journal of the Korean institute of surface engineering
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    • v.48 no.5
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    • pp.211-217
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    • 2015
  • To fabricate white LED having a high color rendering index value, red color phosphor mixed with the green color phosphor together in the blue chip, namely the blue chips with RG phosphors packaging is most favorable for high power white LEDs. In our previous papers, we reported on successful syntheses of $Sr_{2-}$ $Si_5N_8:Eu^{2+}$ and $CaAlSiN_3$ phosphors for red phosphor. In this work, for high power green phosphor, greenemitting ternary nitride $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphor was synthesized in a high frequency induction furnace under $N_2$ gas atmosphere at temperatures up to $1400^{\circ}C$ using $EuF_3$ as a raw material for $Eu^{2+}$ dopant. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 250 - 500 nm, namely from UV to blue region with distinct enhanced emission spectrum peaking at ${\approx}530nm$.

The Dielectric Properties of $Ba_{1-x}A_x(Mg_{1/3}Nb_{2/3})O_3$(A=Sr, Ca) Ceramics for Microwave Resonator (마이크로파 공진자용$Ba_{1-x}A_x(Mg_{1/3}Nb_{2/3})O_3$(A = Sr, Ca))

  • 김부근;김재윤;김강언;정수태;조상희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.6
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    • pp.478-484
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    • 2000
  • The structural changes and the microwave dielectric properties of $Ba_{1-x}$/A$_{x}$/(Mg$_{1}$3//Nb$_{2}$3/)O$_3$(A=Sr, Ca=x0, 0.2, 0.4, 0.6, 0.8, 1.0) were investigated. The densities of samples are gradually decreased with increasing x(BMN=6.1, SMN=5.22 and CMN=4.26 g/m$^3$)The crystal structure of BMN was untilting of oxygen octahedral. The structural changes of BSMN showed the antiphase tilting at x>0.4, and those of BCMN showed the antiphase tilting at 0.20.8. The variation of dielectric constant with Sr was small(BMN=32, SMN=30) However the variation with Ca was large the highest value was 42 at Ca=0.2(CMN=25) The maximum quality factor was 68,000 GHz at Sr=0.2 and the minimum quality factor was 3,000 GHz at Ca=0.2 (BMN=35,000, SMN=20,000 and CMN=23,000 GHz) The temperature coefficients of resonant frequency of BSMN were about 2 times larger than those of BCMN in all composition.ion.

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Micropropagation of Achyranthes japonica Through Axillary Buds Culture (액아배양을 통한 쇠무릎(Achyranthes japonica)의 대량증식)

  • Kim ,Kwang-Soo;Sung, Nak-Sool;Kim, Myung-Won;Pyo, Byung-Sik;Hwang, Baik
    • Korean Journal of Plant Tissue Culture
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    • v.24 no.6
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    • pp.357-360
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    • 1997
  • Multiple shoot formation was obtained from excised axillary buds of Achyranthes japonica NAKAI cultured on MS media containing various growth regulators such as auxin and cytokinin. The highest average number of shoots was obtained in 1 mg/L NAA and 2 mg/L BA after 6 weeks (25.8 adventitious shoots per node). Although the regeneration rate was less than the former condition, optimal combination for the production of more shoots with a suitable size was 0.5 mg/L NAA and 1 mg/L BA (19.7 adventitious shoots per node). Roots were induced from regenerated shoots after 3 weeks culture, transferred to 1/2 MS medium supplemented with 0.1 mg/L IBA. Micropropagated plants were successfully transferred to soil.

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