• 정보저장시스템학회:학술대회논문집
• /
• 2005.10a
• /
• pp.22-25
• /
• 2005

In this research, a wafar-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2013.10a
• /
• pp.343-345
• /
• 2013

This paper describes a phase-locked loop (PLL) that generates a 51-phase clock with the operating frequency of 125MHz. To generate 51-phase clock with a frequency of 125 MHz, the proposed PLL uses three voltage controlled oscillators (VCOs) which are connected by resistors. Each VCO consists of 17 delay-cells. An resistor averaging scheme, which makes three VCOs to connect with each other, makes it possible to generates 51-phase clock of the same phase difference. The proposed PLL is designed by using 65 nm CMOS process with a 1.0 V supply. At the operating frequency of 125 MHz, the simulated DNL and peak-to-peak jitter are +0.0016/-0.0020 LSB and 1.07 ps, respectively. The area and power consumption of the implemented PLL are $290{\times}260{\mu}m^2$ and 2.5 mW, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.18 no.2
• /
• pp.408-414
• /
• 2014

This paper proposes a charge-pump phase-locked loop (PLL) with 51-phase output clock of a 125 MHz target frequency. The proposed PLL uses three voltage controlled oscillators (VCOs) to generate 51-phase clock and increase of maximum operating frequency. The 17 delay-cells consists of each VCO, and a resistor averaging scheme which reduces the phase mismatch among 51-phase clock combines three VCOs. The proposed PLL uses a 65 nm 1-poly 9-metal CMOS process with 1.0 V supply. The simulated peak-to-peak 지터 of output clock is 0.82 ps at an operating frequency of 125 MHz. The differential non-linearity (DNL) and integral non-linearity (INL) of the 51-phase output clock are -0.013/+0.012 LSB and -0.033/+0.041 LSB, respectively. The operating frequency range is 15 to 210 MHz. The area and power consumption of the implemented PLL are $580{\times}160{\mu}m^2$ and 3.48 mW, respectively.

• Journal of IKEEE
• /
• v.23 no.3
• /
• pp.858-864
• /
• 2019

A clock system is proposed to eliminate data loss due to frequency difference between sensor nodes in a sensor utility network. The proposed clock system for each sensor node consists of a bust clock-data recovery (CDR) circuit, a digital phase-locked loop outputting a 32-phase clock, and a digital frequency synthesizer using a programmable open-loop fractional divider. A CMOS oscillator using an active inductor is used instead of a burst CDR circuit for the first sensor node. The proposed clock system is designed by using a 65 nm CMOS process with a 1.2 V supply voltage. When the frequency error between the sensor nodes is 1%, the proposed burst CDR has a time jitter of only 4.95 ns with a frequency multiplied by 64 for a data rate of 5 Mbps as the reference clock. Furthermore, the frequency change of the designed digital frequency synthesizer is performed within one period of the output clock in the frequency range of 100 kHz to 320 MHz.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.6
• /
• pp.873-879
• /
• 2016

A charge pump circuit with very short turn-on time is presented for minimizing reference spurs in CMOS PLL frequency synthesizers. In the source switching charge pump circuit, applying proper voltages to the source nodes of the current source FETs can significantly reduce the unwanted glitch at the output current while not degrading the rising time, thus resulting in low spur at the synthesizer output spectrum. A 1.1-1.6 GHz PLL synthesizer employing the proposed charge pump circuit is fabricated in 65 nm CMOS. The current consumption of the charge pump is $490{\mu}A$ from 1 V supply. Compared to the conventional charge pump, it is shown that the reference spur is improved by dB through minimizing the turn-on time. Theoretical analysis is described to show that the measured results agree well with the theory.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.11 no.4
• /
• pp.247-255
• /
• 2011

This paper describes a CMOS outphasing transmitter using two wideband phase modulators. The proposed architecture can simplify the overall outphasing transmitter architecture using two-point phase modulation in phase-locked loop, which eliminates the necessity digital-to-analog converters, filters, and mixers. This architecture is verified with a WCDMA signal at 1.65 GHz. The prototype is fabricated in standard 130 nm CMOS technology. The measurement results satisfied the spectrum mask and 4.9% EVM performance.

• Journal of the Optical Society of Korea
• /
• v.20 no.5
• /
• pp.623-627
• /
• 2016

A power-adjustable fully-integrated CMOS optical receiver with multi-rate clock-and-data recovery circuit is presented in standard 65-nm CMOS technology. With supply voltage scaling, key features of the optical receiver such as bandwidth, power efficiency, and optical sensitivity can be automatically optimized according to the bit rates. The prototype receiver has −23.7 dBm to −15.4 dBm of optical sensitivity for 10⁻⁹ bit error rate with constant conversion gain around all target bit rates from 1.62Gbps to 8.1 Gbps. Power efficiency is less than 9.3 pJ/bit over all operating ranges.

• Journal of Korea Society of Industrial Information Systems
• /
• v.18 no.5
• /
• pp.9-14
• /
• 2013

This paper is designed frequency multiplier with low phase noise using DLL technique. The VCDL is designed using a differential structure to reduce common-mode noise. The proposed frequency multiplier is fabricated in a 65nm, 1.2V TSMC CMOS process, and the operating frequency range from 10MHz to 24MHz was measured. The SSB phase noise is measured to be -125dBc/Hz at 1MHz from 38.4MHz carrier. A total area of $0.032mm^2$were consumed in the chip, including the output buffer. Total current is 1.8mA at 1.2V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.9
• /
• pp.39-48
• /
• 2009

Human face tracking has gradually become an important issue in applications for portable multimedia devices such as digital camcorder, digital still camera and cell phone. Current embedded face tracking software implementations lack the processing abilities to track faces in real time mobile video processing. In this paper, we propose a power efficient hardware-based face tracking architecture operating in real time. The proposed system was verified by FPGA prototyping and ASIC implementation using Samsung 65nm CMOS process. The implementation result shows that tracking speed is less than 8.4 msec with 150K gates and 20 mW average power consumption. Consequently it is validated that the proposed system is adequate for portable multimedia device.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.4
• /
• pp.395-404
• /
• 2016

A 6-bit 3.4 GS/s flash ADC in a 65 nm CMOS process is reported along with the proposed 4x time-domain interpolation technique which allows the reduction of the number of comparators from the conventional $2^N-1$ to $2^{N-2}$ in a N-bit flash ADC. The proposed scheme effectively achieves a 4x interpolation factor with simple SR-latches without extra clocking and calibration hardware overhead in the interpolated stage where only offset between the $2^{N-2}$ comparators needs to be calibrated. The offset in SR-latches is within ${\pm}0.5$ LSB in the reported ADC under a wide range of process, voltage supply, and temperature (PVT). The design considerations of the proposed technique are detailed in this paper. The prototype achieves 3.4 GS/s with 5.4-bit ENOB at Nyquist and consumes 12.6 mW power at 1 V supply, yielding a Walden FoM of 89 fJ/conversion-step.