• ETRI Journal
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• v.43 no.5
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• pp.900-908
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• 2021

This paper proposes thermometer-code latches having five and six transistors for unidirectional and bidirectional thermometer-code shift-registers, respectively. The proposed latches omit the set and reset transistors by changing from two supply voltage nodes to the set and reset signals in the cross-coupled inverter. They set or reset the data by changing the supply voltage to ground in either of two inverters. They reduce the number of transistors to five and six compared with the conventional thermometer-code latches having six and eight transistors, respectively. The proposed thermometer-code latches were simulated using a 65 nm complementary metal-oxide-semiconductor (CMOS) process. For comparison, the proposed and conventional latches are adapted to the 64 bit thermometer-code shift-registers. The proposed unidirectional and bidirectional shift-registers occupy 140 ㎛² and 197 ㎛², respectively. Their consumption powers are 4.6 ㎼ and 5.3 ㎼ at a 100 MHz clock frequency with the supply voltage of 1.2 V. They decrease the areas by 16% and 13% compared with the conventional thermometer-code shift-register.

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.121-126
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• 2019

The voltage-controlled oscillator is one of the fundamental building blocks that determine the signal quality and power consumption in RF transceivers for wireless sensor networks. Ring oscillators are attractive owing to their small form factor and multi-phase capability despite the relatively poor phase noise performance in comparison with LC oscillators. The phase noise of a ring oscillator can be improved by using a coupled structure that works at a lower frequency. This paper introduces a 2.4 GHz low-noise ring oscillator that consists of two 3-stage coupled ring oscillators. Each sub-oscillator operates at 800 MHz, and the multi-phase signals are combined to generate a 2.4 GHz quadrature output. The voltage-controlled ring oscillator designed in a 65-nm standard CMOS technology has a tuning range of 800 MHz and exhibits the phase noise of -104 dBc/Hz at 1 MHz offset. The power consumption is 13.3 mW from a 1.2 V supply voltage.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.26-32
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• 2017

This paper presents a low power and high resolution incremental delta-sigma ADC that utilizes a passive integrator instead of an opamp-based active integrator. Opamp is a power-hungry block that involves tight design tradeoffs. To avoid the use of active integrator, the s-domain characteristic of an active integrator is first analyzed. Based on the analysis, an active integrator with low gain design is proposed as an alternative design method. To save power even more aggressively, a passive integrator with no static current is proposed. A 1st order single-bit incremental delta-sigma ADC using the proposed passive integrator is implemented in a 65nm CMOS process. Transistor-level simulation shows that the ADC consumes only 0.6uW under 1.2V supply while achieving SNDR of 71dB with 22kHz bandwidth. The estimated total power consumption including digital filter is 6.25uW, and resulting power efficiency is on a par with state-of-the-art A/D converters.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.7
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• pp.29-35
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• 2017

This paper presents a high-throughput area-efficient mixed-radix fast Fourier transform (FFT) processor using the efficient scheduling schemes. The proposed FFT processor can support 64, 128, 256, and 512-point FFTs for orthogonal frequency division multiplexing (OFDM) systems, and can achieve a high throughput using mixed-radix algorithm and eight-parallel multipath delay commutator (MDC) architecture. This paper proposes new scheduling schemes to reduce the size of read-only memories (ROMs) and complex constant multipliers without increasing delay elements and computation cycles; thus, reducing the hardware complexity further. The proposed mixed-radix MDC FFT processor is designed and implemented using the Samsung 65nm complementary metal-oxide semiconductor (CMOS) technology. The experimental result shows that the area of the proposed FFT processor is 0.36 mm2. Furthermore, the proposed processor can achieve high throughput rates of up to 2.64 GSample/s at 330 MHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.9
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• pp.1158-1165
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• 2021

This paper proposes a CNN accelerator which is optimized Pooling layer operation incorporated in Multiplication And Accumulation(MAC) to reduce the memory size. For optimizing memory and data path circuit, the quantized 8bit integer weights are used instead of 32bit floating-point weights for pre-training of MNIST data set. To reduce chip area, the proposed CNN model is reduced by a convolutional layer, a 4*4 Max Pooling, and two fully connected layers. And all the operations use specific MAC with approximation adders and multipliers. 94% of internal memory size reduction is achieved by simultaneously performing the convolution and the pooling operation in the proposed architecture. The proposed accelerator chip is designed by using TSMC65nmGP CMOS process. That has about half size of our previous paper, 0.8*0.9 = 0.72mm². The presented CNN accelerator chip achieves 94% accuracy and 77us inference time per an MNIST image.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2409-2418
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• 2013

Two frequency synthesizers are proposed to generate a clock for a sub-sampler of an on-chip oscilloscope in this paper. These proposed frequency synthesizers are designed by using a multi-phase delayed-locked loop (DLL)-based phase selector and a fractional-N phase-locked loop (PLL), and they are analyzed by comparing simulation results of each frequency synthesizer. Two proposed frequency synthesizers are designed using a 65-nm CMOS process with a 1V supply and output the clock with the frequency of 121.15 MHz when the frequency of an input clock is 125 MHz. The designed frequency synthesizer using a multi-phase DLL-based phase selector has the area of 0.167 $mm^2$ and the peak-to-peak jitter performance of 2.88 ps when it consumes the power of 4.75 mW. The designed frequency synthesizer using a fractional-N PLL has the area of 0.662 $mm^2$ and the peak-to-peak jitter performance of 7.2 ps when it consumes the power of 1.16 mW.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.9
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• pp.936-943
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• 2013

This work presents the design and measured results of the single channel automotive radar system for 76.5~77 GHz long range FMCW radar applications. The transmitter uses a commercial GaAs monolithic microwave integrated circuit(MMIC) and the receiver uses the down converter designed using 65 nm CMOS process. The output power of the transmitter is 10 dBm. The down converter chip can operate at low LO power as -8 dBm which is easily supplied from the transmitter output using a coupled line coupler. All MMICs are mounted on an aluminum jig which embeds the WR-10 waveguide. A microstrip to waveguide transition is designed to feed the embedded waveguide and finally high gain horn antennas. The overall size of the fabricated radar system is $80mm{\times}61mm{\times}21mm$. The radar system achieved an output power of 10 dBm, phase noise of -94 dBc/Hz at 1 MHz offset and a conversion gain of 12 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.11
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• pp.1627-1634
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• 2021

This paper introduces a low-power compact ADC circuit for analog Convolutional filter for low-power neural network accelerator SOC. While convolutional neural network accelerators can speed up the learning and inference process, they have drawback of consuming excessive power and occupying large chip area due to large number of multiply-and-accumulate operators when implemented in complex digital circuits. To overcome these drawbacks, we implemented an analog convolutional filter that consists of an analog multiply-and-accumulate arithmetic circuit along with an ADC. This paper is focused on the design optimization of a low-power 8bit SAR ADC for the analog convolutional filter accelerator We demonstrate how to minimize the capacitor-array DAC, an important component of SAR ADC, which is three times smaller than the conventional circuit. The proposed ADC has been fabricated in CMOS 65nm process. It achieves an overall size of 1355.7㎛², power consumption of 2.6㎼ at a frequency of 100MHz, SNDR of 44.19 dB, and ENOB of 7.04bit.

• ETRI Journal
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• v.34 no.6
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• pp.827-837
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• 2012

We propose a flow admission control (FAC) for setting up a wire-speed connection for new flows based on their negotiated bandwidth. It also terminates a flow that does not have a packet transmitted within a certain period determined by the users. The FAC can be used to provide a reliable transmission of user datagram and transmission control protocol applications. If the period of flows can be set to a short time period, we can monitor active flows that carry a packet over networks during the flow period. Such powerful flow management can also be applied to security systems to detect a denial-of-service attack. We implement a network processor called a flow management network processor (FMNP), which is the second generation of the device that supports FAC. It has forty reduced instruction set computer core processors optimized for packet processing. It is fabricated in 65-nm CMOS technology and has a 40-Gbps process performance. We prove that a flow router equipped with an FMNP is better than legacy systems in terms of throughput and packet loss.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.3
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• pp.164-168
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• 2016

A low insertion-loss, high-isolation switch based on single pole double throw (SPDT) for a 2.4GHz Bluetooth low-energy transceiver is presented in this paper. In order to increase isolation, the body floating technique is implemented. Based on characteristics whereby the ratio of the sizes of the shunt and the series transistors significantly affect the performance of the switches, the device sizes are optimized. A simple matching network is also designed to enhance the insertion loss. Thus, the SPDT switch has high isolation and low insertion loss without increasing the complexity of the circuit. The proposed SPDT is designed and simulated in a complementary metal-oxide semiconductor 65nm process. The switch has a $530{\mu}m{\times}270{\mu}m$ area and achieves 0.9dB, 1.78dB insertion loss and 40dB, 41dB isolation of transmission, reception modes, respectively.