• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.7 no.1
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• pp.53-60
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• 1996

The 8W hybrid MIC SSPA has been developed in the frequency range from 14.0 GHz to 14.5 GHz for uplink of KOREASAT's earth station. The whole system was designed of two parts with driving amplifier and high power amplifier to simplify the fabrication process. we reduced weight and volum of power amplifier through arranging the bias circuits in the same housing. The realized SSPA has a small signal gain of $26\pm1dB$within 500 MHz bandwidith, and the input and output return losses are over 7dB and 12dB respectively. The output power of 39.0 ~ 39.2dBm is achieved at the 1dB gain compression point of 14 GHz, 14.25 GHz, and 14.5 GHz. That reveals higher power than 8W of design target. The proposed SSPA manufacture techni- ques in this paper can be applied to the implementation of power amplifiers for some radars and SCPC.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.925-928
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• 2005

In this study, we fabricated the DAMLs using surface micromachining technology as well a low loss coupler for the millimeter-wave band applications using these DAMLs. The structure of DAML is that a signal line is supported on ground plane by dielectric posts. Therefore it has advantages about the loss characteristic and the stable structure. The other advantage of the DAML process is a simple and convenient technique using 4 mask steps, even if it has a micromachining technology. The lowest loss of the fabricated DAML was obtained 2.2 dB/cm at 110 GHz. To obtain the low loss characteristic, couplers were designed and fabricated by using DAMLs. The fabricated ring hybrid coupler has the coupling of 3.58 dB and the thru of 3.31 dB at 60 GHz. We can also obtain the coupling of 3.42 dB, the thru of 3.82 dB from fabricated branch line coupler at 60 GHz.

• Journal of the Korea Institute of Military Science and Technology
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• v.7 no.4 s.19
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• pp.20-25
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• 2004

The existing antenna that equipped with Micro Aerial Vehicle, microstrip antenna only can send and receive image signal because of limited bandwidth. But, proposed antenna that equipped with Micro Aerial Vehicle flight introduces tapered type patch antenna, also improves bandwidth then can transfer present location, altitude, movement speed. Furthermore, as a result of introduce stacked type, it transfers more quality of image signal, and represents most suitable performance in Korean peninsula that has many mountain peaks. In this paper, to transmit and receive the wideband signals with a antenna system, the wideband microstrip antenna is proposed and designed. This antenna operates at 2.4GHz. In this thesis, the resonance frequency of 2.4GHz and the reflective loss of the antenna of -22dB were calculated by measuring the fabricated Tapered Microstrip Patch Antenna which was designed with the resonance of 2.4GHz. The calculated gain and efficiency of antenna were 6.7dB and $60\%$ respectively. The characteristic of the bandwidth shows with $50\~60MHz$ which is $6.02\%$ at the basis of -l5dB reflective loss. The experimental results can be used in the characteristic of the resonators and this antenna produces a greatly enhanced bandwidth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.7 no.1
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• pp.43-52
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• 1996

Nonreciprocal twin-toroid ferrite phase shifter is designed, fabricated, and tested. ABCD matrix method is used to design the phase shifter and to compute its optimum dimen- sions. Quarter-wave two-section impedance matching transformers are utilized in order to match the impedance of the empty guide to that of the ferrite-loaded guide. Driving circuit controls the current needed to drive the phase shifter. Measured insertion loss and VSWR characteristics within the operaring band(9.1GHz ~ 9.5GHz) are less than 1.2dB and 1.15, respectively. After temperature compensation technique is appied to the phase shifter, the measured phase error of the phase shifter is less than $\pm4$ between $-10^{\circ}C\;and\;+60^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.12
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• pp.103-108
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• 2004

In this paper, we present MIMIC(Millimeter-wave Monolithic Integrated Circuit) up-mixer with low conversion loss and low LO power for the V-band transmitter applications. The up-mixer was successfully integrated by using 0.1 ㎛ GaAs pseudomorphic HEMTs(PHEMTs) and coplanar waveguide (CPW) structures. The circuit is designed to operate at RF frequencies of 60.4 GHz, IF frequencies of 2.4 GHz, and LO frequencies of 58 GHz. The fabricated MIMIC up-mixer size is 2.3 mmxl.6 mm. The measured results show that the low conversion loss of 1.25 dB when input signal is -10.25 dBm at LO power of 5.4 dBm. The LO to RF isolation is 13.2 dB at 58 GHz. The fabricated V-band up-mixer represents lower LO input power and conversion loss characteristics than previous reported millimeter-wave up-mixers.

• Journal of Advanced Navigation Technology
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• v.19 no.1
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• pp.60-65
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• 2015

In the present study, compact $0^{th}$ order resonant antenna for 2.4 GHz ISM frequency band is newly proposed. In case of wireless communication systems such as wi-fi, bluetooth and Zigbee, antennas with omni-directional radiation pattern are necessary because of the demands for uniformly received electric field strength without variation for direction. It is well-known that $0^{th}$ order resonant antennas are not only advantageous for miniaturization but also have advantage of maintaining omni-directional radiation pattern. The proposed antenna is composed of two-element array in which the size of unit element should be smaller than ${\lambda}/4$ correspondent to the resonant length of typical monopole antennas The proposed antenna which is placed at middle and upper side of PCB with $50{\times}50mm^2$ size is designed and fabricated within limited space of $8{\times}5mm^2$. The measured impedance bandwidth ($S_{11}{\leq}-10dB$) is about 100 MHz (2.4~2.5 GHz) which corresponds to quite wide bandwidth in comparison with the antenna size, and also the measured peak gain over the passband is more than 3 dBi which is thought to be slightly wider than the other $0^{th}$ order resonant antenna.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.274-283
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• 2014

In this paper, the epi layer of npn SOI HBT with n+ buried layer has been studied through Sentaurus process and device simulator. The doping value of the deposited epi layer has been varied for the npn HBT to achieve improved $f_tBV_{CEO}$ product (397 GHzV). As the $BV_{CEO}$ value is higher for low value of epi layer doping, higher supply voltage can be used to increase the $f_t$ value of the HBT. At 1.8 V $V_{CE}$, the $f_tBV_{CEO}$ product of HBT is 465.5 GHzV. Further, the film thickness of the epi layer of the SOI HBT has been scaled for better performance (426.8 GHzV $f_tBV_{CEO}$ product at 1.2 V $V_{CE}$). The addition of this HBT module to fully depleted SOI CMOS technology would provide better solution for realizing wireless circuits and systems for 60 GHz short range communication and 77 GHz automotive radar applications. This SOI HBT together with SOI CMOS has potential for future high performance SOI BiCMOS technology.

• Journal of electromagnetic engineering and science
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• v.15 no.4
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• pp.232-238
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• 2015

This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is $900{\times}1,890{\mu}m^2$, including RF and DC pads.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.8
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• pp.819-826
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• 2002

In this paper, the performance of Au / $Ba_{0.5}Sr_{0.5}TiO_3$ (BST) / Magnesium oxide (MgO) two-layered electrically tunable band-pass Filters (BPFs) is demonstrated. The devices consist of microstrip, coplanar waveguide (CPW), and conductor-backed coplanar waveguide (CBCPW) structures. These BST thin film band-pass filters have been designed by the 2.5 D field simulator, IE3D, Zeland Inc., and fabricated by thin film process. The simulation results, using the 2-pole microstrip, CPW, and CBCPW band-pass filters, show the center frequencies of 5.89 GHz, 5.88 GHz, and 5.69 GHz, and the corresponding insertion losses are 2.67 dB, 1.14 dB, and 1.60 dB, with 3 %, 9 %, and 7 % bandwidth, respectively. The measurement results show the center frequencies of 6.4 GHz, 6.14 GHz, and 6.04 GHz, and their corresponding insertion losses are 6 dB, 4.41 dB, and 5.41 dB, respectively, without any bias voltage. With the bias voltage of 40 V, the center frequencies for the band-pass filters are measured to be 6.61 GHz, 6.31 GHz, and 6.21 GHz, and their insertion losses are observed to be 7.33 dB, 5.83 dB, and 6.83 dB, respectively. From the experiment, the tuning range for the band-pass filters are determined as about 3 % ~ 8 %.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.9
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• pp.60-65
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• 2009

In this paper, we present a compact Ultra-Wideband band-pass later with notched band at fireless-LAN band using a band-pass and band-notch filter. The structure of our proposed band-pass filter is very simple, and the DGS(Defected Ground Structure) structure is used to get the low-pass filter characteristic, and an embedded open-stub structure is used to get the notched filter. Our proposed band-pass filter can be much smaller than a cascaded filter. As a result of measurement, the insertion loss is less than 0.7dB throughout the pass-band of $2.21GHz{\sim}10.92GHz$, the return loss is more than 17dB and the group delay maximum variation is 0.24ns and a notched band is at $5.3GHz{\sim}5.7GHz$.