• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.590-595
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• 2004

The shape and size variations of the nanopatterns produced on a positive photoresist using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture( $P_{in}$ ), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}$ =1.2$\mu$W and V=12$\mu$m/. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage using azopolymer is discussed at the end.

• Macromolecular Research
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• 제13권5호
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• pp.435-440
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• 2005

This study describes a method where the match of two different length scales, i.e., the patterns from self-assembled block copolymer (<50 nm) and electron beam writing (>50 nm), allow the nanometer scale pattern mask. The method is based on using block copolymers containing a poly(methyl methacrylate) (PMMA) block, which is subject to be decomposed under an electron beam, as a pattern resist for electron beam lithography. Electron beam on self assembled block copolymer thin film selectively etches PMMA microdomains, giving rise to a polymeric nano-pattern mask on which subsequent evaporation of chromium produces the arrays of Cr nanoparticles followed by lifting off the mask. Furthermore, electron beam lithography was performed on the micropatterned block copolymer film fabricated by micro-imprinting, leading to a hierarchical self assembled pattern where a broad range of length scales was effectively assembled, ranging from several tens of nanometers, through submicrons, to a few microns.

• 한국전기전자재료학회논문지
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• 제33권1호
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• pp.16-20
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• 2020

In this study, a patterning method using self-aligned nanostructures was introduced to fabricate GaN-based fin-gate HEMTs with normally-off operation, as opposed to high-cost, low-productivity e-beam lithography. The honeycomb-shaped fin-gate channel width is approximately 40~50 nm, which is manufactured with a fine width using a proposed method to obtain sufficient fringing field effect. As a result, the threshold voltage of the fabricated device is 0.6 V, and the maximum normalized drain current and transconductance of Gm are 136.4 mA/mm and 99.4 mS/mm, respectively. The fabricated devices exhibit a smaller sub-threshold swing and higher Gm peak compared to conventional planar devices, due to the fin structure of the honeycomb channel.

• 한국레이저가공학회지
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• 제15권3호
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• pp.1-6
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• 2012

The friction force of patterned needle in elastomer have been investigated to verify the application for bio and plastic industry. The micro pattern on the needle surface were prepared by 266 nm, 20 ns laser and 800 nm, 220 fs laser, which were able to generate the different surface roughness. The friction force was measured by the load cell of 10 N capacity. As the results, the friction force of no patterned needle is almost constant during the needle penetrates the silicone rubber sample. However, the needle having asperities shows the variation of the friction force. The higher the surface roughness is, the smaller the friction force is until the surface roughness is very high. In our experiment conditions, the reduction of the friction force by 20 % compared to no pattern needle was achieved with straight and $50{\mu}m$ discrete line generated by 266 nm, 20 ns laser.

• 한국방송∙미디어공학회:학술대회논문집
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• 한국방송공학회 2014년도 추계학술대회
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• pp.226-227
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• 2014

We demonstrate nanoscale local anodic oxidation (LAO) patterning on few layer graphene using atomic force microscope (AFM) at room temperature and normal atmosphere. We focus on the humidity dependency in nanoscale oxidation of graphene. The relationship between the oxidation size and the AFM setting values, such as set point, tip speed, and humidity are observed. By changing these values, proper parameters were found to produce features on demand size. This technique provides an easy way to form graphene oxide lithography without any chemical resists. We have obtained oxidation size down to 50-nm with 6-nm-height oxide barrier line with $0.1{\mu}m/s$ tip scanning speed and micrometer size symbols on a graphene flake. We attribute the bumps to local anodic oxidation on graphene surface and combination of oxygen ions into the graphene lattice.

• 한국분무공학회지
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• 제17권1호
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• pp.20-26
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• 2012

Inkjet printing is one of the direct writing technologies and is able to form a pattern onto substrate by dispensing droplets in desired position. Also, by inkjet technology manufacturing time and production costs can be reduced, and procedures can be more efficient. To form a metal pattern, it must be harmonized with conductive nano ink, printing process, sintering, and surface treatment. In this study, micro patterning of conductive line has been investigated using the piezoelectric printhead driven by a bipolar voltage signal is used to dispense $20-40{\mu}m$ diameter droplets and silver nano ink which consists of 50 nm silver particles. In addition, hydrophobic treatment of surface, overlap printing techniques, and sintering conditions with changing temperature and times to achieve higher conductivity.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.581-584
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• 2005

Ion beam processing is one of the key technologies to realize mastless and resistless sub 50nm nano fabrication. Unwanted effects, however, may occur since an energetic ion can interact with a target surface in various ways. Depending on the ion energy, the interaction can be swelling, deposition, sputtering, re-deposition, implantation, damage, backscattering and nuclear reaction. Sputtering is the fundamental mechanisms in ion beam induced direct patterning. Re-deposition and backscattering are unwanted mechanisms to avoid. Therefore understanding of ion beam-solid interaction should be advanced for further ion beam related research. In this paper we simulate some important interaction mechanisms between energetic incident ions and solid surfaces and the results are compared with experimental data. The simulation results are agreed well with experimental data.

• 한국레이저가공학회지
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• 제7권3호
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• pp.37-46
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• 2004

The shape and size variations of the nanopatterns produced on a polymer film using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture($P_{in}$), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}=1.2{\mu}W\;and\;V=12{\mu}m/s$. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage is discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.311-311
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• 2016

최근 고성능 디스플레이 개발이 요구되면서 기존 비정질 실리콘(a-Si)을 대체할 산화물 반도체에 대한 연구 관심이 급증하고 있다. 여러 종류의 산화물 반도체 중 a-IGZO (amorphous indium-gallium-zinc oxide)가 높은 전계효과 이동도, 저온 공정, 넓은 밴드갭으로 인한 투명성 등의 장점을 가지며 가장 연구가 활발하게 보고되고 있다. 기존에는 SG(단일 게이트) TFT가 주로 제작 되었지만 본 연구에서는 DG(이중 게이트) 구조를 적용하여 고성능의 a-IGZO 기반 박막 트랜지스터(TFT)를 구현하였다. SG mode에서는 하나의 게이트가 채널 전체 영역을 제어하지만, double gate mode에서는 상, 하부 두 개의 게이트가 동시에 채널 영역을 제어하기 때문에 채널층의 형성이 빠르게 이루어지고, 이는 TFT 스위칭 속도를 향상시킨다. 또한, 상호 모듈레이션 효과로 인해 S.S(subthreshold swing)값이 낮아질 뿐만 아니라, 상(TG), 하부 게이트(BG) 절연막의 계면 산란 현상이 줄어들기 때문에 이동도가 향상되고 누설전류 감소 및 안정성이 향상되는 효과를 얻을 수 있다. Dual gate mode로 동작을 시키면, TG(BG)에는 일정한 positive(or negative)전압을 인가하면서 BG(TG)에 전압을 가해주게 된다. 이 때, 소자의 채널층은 depletion(or enhancement) mode로 동작하여 다른 전기적인 특성에는 영향을 미치지 않으면서 문턱 전압을 쉽게 조절 할 수 있는 장점도 있다. 제작된 소자는 p-type bulk silicon 위에 thermal SiO2 산화막이 100 nm 형성된 기판을 사용하였다. 표준 RCA 클리닝을 진행한 후 BG 형성을 위해 150 nm 두께의 ITO를 증착하고, BG 절연막으로 두께의 SiO2를 300 nm 증착하였다. 이 후, 채널층 형성을 위하여 50 nm 두께의 a-IGZO를 증착하였고, 소스/드레인(S/D) 전극은 BG와 동일한 조건으로 ITO 100 nm를 증착하였다. TG 절연막은 BG 절연막과 동일한 조건에서 SiO2를 50 nm 증착하였다. TG는 S/D 증착 조건과 동일한 조건에서, 150 nm 두께로 증착 하였다. 전극 물질과, 절연막 물질은 모두 RF magnetron sputter를 이용하여 증착되었고, 또한 모든 patterning 과정은 표준 photolithography, wet etching, lift-off 공정을 통하여 이루어졌다. 후속 열처리 공정으로 퍼니스에서 질소 가스 분위기, $300^{\circ}C$ 온도에서 30 분 동안 진행하였다. 결과적으로 $9.06cm2/V{\cdot}s$, 255.7 mV/dec, $1.8{\times}106$의 전계효과 이동도, S.S, on-off ratio값을 갖는 SG와 비교하여 double gate mode에서는 $51.3cm2/V{\cdot}s$, 110.7 mV/dec, $3.2{\times}108$의 값을 나타내며 훌륭한 전기적 특성을 보였고, dual gate mode에서는 약 5.22의 coupling ratio를 나타내었다. 따라서 산화물 반도체 a-IGZO TFT의 이중게이트 구조는 우수한 전기적 특성을 나타내며 차세대 디스플레이 시장에서 훌륭한 역할을 할 것으로 기대된다.

• 한국산학기술학회논문지
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• 제4권3호
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• pp.317-321
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• 2003

우리가 타자기로 글을 쓸 때는 먹지리본을 햄머가 가격하여 종이 위에 글씨 형태의 먹이 묻는 원리로 진행된다. 이러한 원리를 미세 패터닝에 응용하여, 해머 역할을 하는 Nd-YAG 레이저로 유리기판/ 100 ㎚ Cr(먹지)// 실리콘기판(종이)구조의 적층물에 조사시켜 Cr이 실리콘기판 위에 전사됨으로써 미세 패터닝이 가능한지 확인하였다. 제안된 미세 패터닝은 TeraBit/in²급 고밀도 정보저장 또는 반도체 공정의 생산성 향상을 위해 응용이 가능하다. 선폭 50 ㎛급 레이저를 주사속도 200과 1500 ㎜/s Q-스위치 조건을 10,000-50,000 Hz로 변화시키며 마킹을 실시한 결과 Cr의 전사는 진행되지 않았으나, 최종적으로 입사 선폭의 33％ 이하로 마킹이 가능하여 비싼 광학계를 가진 레이저를 대치하여 보다 정밀한 마킹이 가능함을 확인하였다.