• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.139-143
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• 1997

The photoluminescence characteristics of the zinc gallate have been investigated as a function of the composition and the firing atmosphere. Two distinct emission bands were observed whose peaks are 360 nm and 430 nm respectively. These emission bands are considered to be from two different emission centers. For $ZnO/Ga_2O_3$=49.3/50.7 or higher, 430 nm band is predominant and for $ZnO/Ga_2O_3$=49.2/50.8 or lower, 360nm band becomes predominant, whereas 430 nm band is almost completely suppressed. The shift of emission peak is though to be due to the change of the cation distribution with the zinc content in the spinel zinc gallate. Also, the emission centers responsible for the 360nm band are considered to be more efficient energy absorbers than the ones for the 430 nm band. Highly efficient green emitting phosphor was obtained by activating Zn-deficient zinc gallate with manganeses.

• Korean Journal of Optics and Photonics
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• v.15 no.1
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• pp.6-11
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• 2004

The playback wavelength shift and the optical property stabilization of the reflection type photopolymer OmniDex film are studied as a function of pressure. As the center wavelength is changed from 632 nm to 482 nm, the bandwidth is 27％ broadened and the diffraction efficiency deviation maintained lower than 10％. These results show that the proposed color tuning method minimizes the change of optical properties more than 50％ compared with the diffusion-based method as the center wavelength changed from 511 nm to 630 nm. The press-based color tuning method shows that it could be used to make holographic optical elements that operate at wavelengths where lasers are not readily available for reflection type holographic recording.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.225-231
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• 2006

.고상반응법 (solid state reaction)합성된 ZnS:Mn,Cu,Cl 형광체는 약 $20^{\sim}25{\mu}m$ 의 구형이고, Cubic/hexagonal 구조를 보였다. Electroluminescent device(ELD)는 실크 스크린된 형광층(ZnS:Mn,Cu,Cl)/유전체층 ($BaTiO_3$)으로 구성되었으며, 각층은 $30^{\sim}50{\mu}m,\;50^{\sim}60{\mu}m$ 정도로 도포 하였다. 100 V-400 Hz 의 구동조건에서, ELD 의 백색 발광은 450 nm, 480 nm 픽에서 각각 $Cl_s{\to}Cu^{+}\;_{Zn},\;Cl_s{\to}Cu^{2+}\;_{Zn}$ 전이에 의해 중첩된 청색, 녹색 밴드의 발광과, 580 nm 픽에서 Mn 의 $^{4}T_1{\to}^{6}A_1$ 전이에 의한 황색 밴드의 발광으로 이루어진다. Cu 농도의 증가에 따라 450 nm 의 발광 밴드의 휘도는 감소하며 580 nm 의 발광 밴드의 휘도가 증가하였고 발광 휘도가 향상되었다. 즉, 색온도가 높은 cold white(10000 K)에서 색온도가 낮은 Warm white(3000 K) 로 변한다. 이것은 450 nm 의 발광 밴드가 580 nm 의 발광 밴드에 흡수되는 에너지 전이 (Energy transfer) 현상에 기인한다. ZnS:Mn,Cu,Cl 의 Mn 1.5 wt %, Cu 2.5 wt.% 에서 최적 발광 휘도를 보이며, 100 V-400 Hz 에서 약 $12cd/cm^2$이였다.

• Journal of the Korean Wood Science and Technology
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• v.12 no.3
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• pp.35-40
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• 1984

The ultraviolet absorption spectra of AcBr lignin (Acetyl Bromide lignin) from 10 species grown in Mt. Jiri were determined. There were 3 peak positions, at 249nm (max peak), at 267-268 nm (shallow min. peak) and at 280 nm (lower max. peak). The Bjorkman lignin and lignin sulfonic acid spectra had shoulders, but the AcBr lignin had not them. Average absorbances and absorptivities of the AcBr lignins at peak positions were $0.367{\pm}0.0015$, $24.56{\pm}0.0535$, at 249 nm, $0.278{\pm}0.0016$, $18.50{\pm}0.0569$, at 267-268 nm and $0.306{\pm}0.0016$, $20.42{\pm}0.0627$ at 280 nm, respectively.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.164-167
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• 1988

This paper reports optical properties and hole formation of a 488nm-optimumed trilayer structure utiluzed Te-based thin films as a recording layer, and the application of trilayer to 830nm. The optical recording characteristics of metallic recording media are enhanced significantly by incoporating the metal (Al) layer into an antireflection trilayer structure. Due to the interference condition inherent in the design of the trilayer structure, reflectance from holes is ranked a low fraction. the hole formation is carried out by laser by $Ar^+$ laser(488nm). For 20nsec laser pulse duration, the hole opening threshold power of $(Te_{86}Se_{14})_{50}Bi_{50}$ trilayer is lower than that of monolayor that used in this experiments. Hole shapes of the whole sample were clean. For the application of the diode laser, the thickness of dielectric is varied by$\lambda$/4n. In order to compare the monolayer with the trilayer reflectance was measured.

• Biomolecules & Therapeutics
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• v.19 no.2
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• pp.261-266
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• 2011

As recent reports suggest that nanoparticles may penetrate into cell membrane and effect DNA condition, it is necessary to assay possible cytotoxic and genotoxic risk. Three different sizes of magnetic nanoparticle silica (MNP@$SiO_2$) (50, 100 and 200 nm diameter) were tested for cytotoxicity and DNA damage using L5178Y cell. MNP@$SiO_2$ had constant physicochemical characteristics confirmed by transmission electron microscope, electron spin resonance spectrometer and inductively coupled plasma-atomic emission spectrometer for 48 h. Treatment of MNP@$SiO_2$ induced dose and time dependent cytotoxicity. At 6 h, 50, 100 or 200 nm MNP@$SiO_2$ decreased significantly cell viability over the concentration of 125 ${\mu}g/ml$ compared to vehicle control (p<0.05 or p<0.01). Moreover, at 24 h, 50 or 100 nm MNP@$SiO_2$ decreased significantly cell viability over the concentration of 125 ${\mu}g/ml$(p<0.01). And treatment of 200 nm MNP@$SiO_2$ decreased significantly cell viability at the concentration of 62.5 ${\mu}g/ml$ (p<0.05) and of 125, 250, 500 ${\mu}g/ml$ (p<0.01, respectively). Furthermore, at 48 h, 50, 100 or 200 nm MNP@$SiO_2$ decreased significantly cell viability at the concentration of 62.5 ${\mu}g/ml$ (p<0.05) and of 125, 250, 500 ${\mu}g/ml$ (p<0.01, respectively). Cellular location detected by confocal microscope represented they were existed in cytoplasm, mainly around cell membrane at 2 h after treatment of MNP@$SiO_2$. Treatment of 50 nm MNP@$SiO_2$ significantly increased DNA damage at middle and high dose (p<0.01), and treatment of 100 nm or 200 nm significantly increased DNA damage in all dose compared to control (p<0.01). Taken together, treatment of MNP@$SiO_2$ induced cytotoxicity and enhanced DNA damage in L5178Y cell.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.261-263
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• 2002

CMOS devices have scaled down to sub-50nm gate to achieve high performance and high integration density. Key challenges with the device scaling are non-scalable threshold voltage( $V^{th}$ ), high electric field, parasitic source/drain resistance, and $V^{th}$ variation by random dopant distribution. To solve scale-down problem of conventional structure, a new structure was proposed. In this paper, we have investigated double-gate MOSFET structure, which has the main-gate and the side-gates, to solve these problem.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.105-106
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• 2005

The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.7
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• pp.4925-4929
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• 2015

Dye-sensitized solar cell(DSSC) has aroused intense interest owing to its competitive price and stabilized properties than Si based solar cells. Recently, many studies have been reported on the DSSC, especially development of a transparent conductive oxide-less dye-sensitized solar cell(TCO-less DSSC). In this paper, a thick and porous Ti electrode for low cost DSSC developed its properties. To estimate the Ti electrode, the films are tested FESEM and J-V evaluation method. An increase in Ti thickness from 50 nm to 200 nm mainly affects the fill factor without noticeably changing the photocurrent density. It was confirmed that optimal DSSC efficiency was obtained at Ti 150 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.956-960
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• 2009

The characteristics of organic films can be affected by the temperature of evaporation source because the temperature of evaporation source has an effect on substrate temperature during OLED fabrication process using the thermal evaporation. To investigate the characteristics of OLED devices fabricated by using thermally damaged organic films, I-V-L and half life-time in OLED devices fabricated with various substrate temperatures were measured. During emission layer(EML) evaporation, OLED devices with a structure of ITO(100 nm)/ELM200(50 nm)/NPB(30 nm)/$Alq_3$(55 nm)/LiF(0.7 nm)/Al(100 nm) were fabricated at various substrate temperatures(room temperature, $30^{\circ}C$, $40^{\circ}C$, and $50^{\circ}C$). The characteristics of current density and luminance versus applied voltage in OLED devices fabricated shows that many electrical currents flowed and high brightness appeared at low voltage, but that the lifetime of OLED devices dropped suddenly. This phenomenon explained that the crystallization of $Alq_3$ thin film appeared owing to the substrate heating during evaporation.