• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.156-163
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• 2008

We proposed a new $p^+/n^+$ gate locally-separated-channel (LSC) bulk FinFET which has vertically formed oxide region in the center of fin body, and device characteristics were optimized and compared with that of normal channel (NC) FinFET. Key device characteristics were investigated by changing length of $n^+$ poly-Si gate ($L_s$), the material filling the trench, and the width and length of the trench at a given gate length ($L_g$). Using 3-dimensional simulations, we confirmed that short-channel effects were properly suppressed although the fin width was the same as that of NC device. The LSC device having the trench non-overlapped with the source/drain diffusion region showed excellent $I_{off}$ suitable for sub-50 nm DRAM cell transistors. Design of the LSC devices were performed to get reasonable $L_s/L_g$ and channel fin width ($W_{cfin}$) at given $L_gs$ of 30 nm, 40 nm, and 50 nm.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.557-562
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• 2012

Self-organized ruthenium (Ru) dots were fabricated by $400^{\circ}C$ RTA (rapid thermal annealing) and ALD (atomic layer deposition). The dots were produced under the $400^{\circ}C$ RTA conditions for 10, 30 and 60 seconds on all Si(100)/200 nm-SiO2, glass, and glass/fluorine-doped tin oxide (FTO) substrates. Electrical sheet resistance, and surface microstructure were examined using a 4-point probe and FE-SEM (field emission scanning electron microscopy). Ru dots were observed when a 30 nm-Ru layer on a Si(100)/200 nm-SiO2 substrate was annealed for 10, 30 and 60 seconds, whereas the dots were only observed on a glass substrate when a 50 nm-Ru layer was annealed on glass. For a glass/FTO substrate, RTA <30 seconds was needed for 30 nm Ru thick films. Those dots can increase the effective surface area for silicon and glass substrates by up to 5-44%, and by 300% for the FTO substrate with a < $20^{\circ}$ wetting angle.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.30-36
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• 2009

The effects of $HfO_2$ film thickness on electrical, optical, and structural properties were investigated. We fabricated ITO/$HfO_2$/ITO metal-insulator- metal (MIM) capacitor using transparent conducting oxide. When $HfO_2$ film thickness increase from 50 nm to 300 nm, dielectric constant of $HfO_2$ was decreased from 20.87 to 9.72. The transparent capacitor shows an overall high performance, such as a dielectric constant about 21 by measuring the ITO/$HfO_2$/ITO capacitor structures and a low leakage current of $2.75{\times}10^{-12}\;A/cm^2$ at +5 V. Transmittance above 80% was observed in visible region.

• Applied Chemistry for Engineering
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• v.18 no.2
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• pp.111-115
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• 2007

Bimodally porous ${\gamma}$-alumina granules, including mesopores (2~50 nm) and macropores (>50 nm), were prepared by sol-gel and oil-drop method. Mesopores are made from the voids among the alumina crystallites, while macropores are from the space of the decomposed PS particles used as physical templates during the granulation process. The product ${\gamma}$-alumina granules with the average diameter of 2 mm were characterized by FE-SEM, XRD, FT-IR, $N_2$ porosimetry, and universal mechanical testing system.

• Membrane Journal
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• v.22 no.5
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• pp.332-341
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• 2012

We studied the effects of induction of natural convection instability flow (NCIF) according to the gravitational orientation (inclined angle) of the membrane cell on the reduction of membrane fouling in the constant-flow ultrafiltration (UF) of colloidal silica solutions. Five colloidal silica solutions with different silica size (average size = 7, 12, 22, 50 nm and 78 nm) were used as UF test solutions. The silica particles in colloidal solutions form cakes on the membrane surface thereby causing severe membrane fouling. The constant-flow UF performance according to the gravitational orientation of the membrane cell (from $0^{\circ}$ to $180^{\circ}$ inclined angle), was examined in an unstirred dead-end cell. We evaluate the effects of NCIF on the suppression of fouling formation by measuring the variation of transmembrane pressure (TMP) and the increase of critical flux by using the flux-stepping method. In the constant-flow dead-end UF for the smaller size (7, 12 nm and 22 nm) silica colloidal solutions, changing the gravitational orientation (inclined angle) of the membrane cell above the $30^{\circ}$ angle induces NCIF in the membrane module. This induced NCIF enhances back transport of the deposited silica solutes away from the membrane surface, therefore gives for the reduction of TMP. But in the constant-flow UF for the more larger size (50 nm and 78 nm) silica colloidal solutions, NCIF effects are not appearing. The critical flux is increased as increasing the module angle and decreasing the silica size. Those results show that the intesity of NCIF occurrence in membrane module is more higher as increasing the module angle and decreasing the silica size.

• Korean Journal of Optics and Photonics
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• v.30 no.6
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• pp.226-229
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• 2019

We investigated an interrogation system for fiber Bragg gratings by using a 50-GHz 96-channel array waveguide grating. Linearity of the sensitivity (the wavelength shift in response to the change in strain or temperature) is achieved for a Bragg grating of sufficiently wide bandwidth. The present wavelength-monitoring system could measure the change in Bragg wavelength with a resolution of 0.01 nm, at intervals of 10 seconds. When this interrogation system was used for a linear array of 12 acrylaterecoated fiber gratings, the wavelength sensitivity changed from 0.018 nm/℃ to 0.01 nm/℃ when the operating temperature changed from -25℃ to 85℃.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.312-320
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• 1999

Effect of deposition conditions on the magnetic properties of SmCo/Cr prepared by a RF magnetron sputtering method was studied. We obtained the maximum coercivity of 3.2 kOe in the sample of Cr(50 nm)/SmCo(40 nm, 50W, 20 mT)/Cr(150 nm, 100 W, 30 mT). The coercivity of the SmCo/Cr depends largely on the roughness of the Cr underlayer and the composition of SmCo. The roughness of the Cr underlayer increased with increasing the Ar pressure and thickness, and promoted the isolation of SmCo grains which resulted in an enhanced coercivity. The composition of the SmCo was changed with RF power and Ar pressure due to the mass difference between Sm and Co and the resputtering phenomena. The maximum coercivity was obtained in the composition of about 20 at.% Sm. The mechanism of magnetization reversal of the present SmCo films changed from domain wall motion to domain rotation as the RF power and the Ar pressure increase. This was though to be due to the defects, such as the roughness of Cr surface, porous column boundaries etc., which inhibit domain wall movement.

• Advances in nano research
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• v.16 no.5
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• pp.501-508
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• 2024

In this study, nanotoxicity tests were made by exposure of Artemia salina to copper (Cu 60-80 nm) and copper oxide (CuO 40 nm) nanoparticles (NPs) at different concentrations (0.2, 1, 5, 10, 25, and 50 mg/L). The LC₅₀ value of Cu (60-80 nm) NPs on the A. salina individuals at the beginning (0), 24^th, 48^th and 72^nd hours and elimination period was 52.37 mg/L while the LC₅₀ value of CuO (40 nm) NPs was 55.39 mg/L. The results of UV-Vis absorbance values showed that all statistical data revealed that maximum effect was observed between 24-30 hours and 25 ppm absorbance concentration was more effective. The multiple R, correlation coefficient (R2) and adjusted R2 values of Cu NP for the suitable Quadratic model were, respectively; 92.96 %, 86.42 % and 76.71 % while they are 98.31 %, 96.64 % and 94.25 % for CuO NP. Also, the data, was indicated effect size significantly changed based on the type and size of NP. Considering the microscope results, it was clearly noticed that A. salina organisms took the NPs in to their body. The accumulation in the gut of A. salina was observed and the images were taken with phase contrast microscope for both of NPs. The highest decrease for survival rates of A. salina individuals exposed to Cu NP was observed in the 10 ppm concentration (43.47 %) and in the 5 ppm concentration (46.20 %) for CuO NP. The results revealed that Cu and CuO NPS showed different toxic effects and that Cu NPs were more toxic than CuO.

• Resources Recycling
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• v.13 no.6
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• pp.16-25
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• 2004

In this study, nano-sized indium oxide powder with the average particle size below 100 nm is prepared from the indium chloride solution by the spray pyrolysis process. The effects of the concentration of raw material solution, the nozzle tip size and the air pressure on the properties of powder were studied. As the indium concentration of the raw material solution increased from 40 g/l to 350 g/l, the average particle size of the powder gradually increased from 20 nm to 60 nm, yet the particle size distribution appeared more irregular, the intensity of a XRD peak increased and specific surface area decreased. As the nozzle tip size increased from 1 nm to 5 nm, the average particle size of the powder increased from 40 nm to 100 nm, the particle size distribution was much more irregular, the intensity of a XRD peak increased and specific surface area decreased. As the air pressure increased from 0.1 kg/cm$^2$ to 0.5 kg/cm$^2$, the average particle size of the powder varies slightly upto 90~100 nm. As the air pressure increased from 1 kg/cm$^2$ to 3 kg/cm$^2$, the average particle size decreased upto 50~60 nm, the intensity of a XRD peak decreased and the specific surface area increased.

• Applied Microscopy
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• v.25 no.2
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• pp.65-72
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• 1995

The interfacial structures of ZnSe/GaAs which were grown by single chamber MBE at $300^{\circ}C$ were investigated by high resolution transmission electron microscope working at 300 kV with resolution of 0.18 nm. The interfaces of ZnSe/GaAs whose thickness is 2,700 nm are wavy and extensive stacking faults were formed in ZnSe epilayer but the interfaces maintained the coherency with the substrate GaAs. The stacking faults are formed in {111} planes and their sizes are $10{\sim}20nm$ in length and two or three atomic layer in width with the density of $10^9/cm^2$. Micortwins and moire fringes are also observed. However. in 10 nm ZnSe epilayer, the interfaces are pseudomorphic and only moire fringes are observed in local areas. The cylindrical defects which are perpendicular to the interface with $50{\sim}60nm$ in length, were observed with the interval of 50 nm at ZnSe/GaAs interfaces in 2,700nm epilayer. The origin and character of these defects are unknown, however, they played a role of producing the structural defects at the interfaces.