• 한국결정학회지
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• 제11권3호
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• pp.151-156
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• 2000

Yb/YAG single crystals were grown from the melt composition of Y/sub 1-x/Yb/sub x/)₃Al/sub 5/O/sub 12/ where x equal to 5, 10, 15, 20, 25, 33, 50, 75 and 100 at % by floating zone method. Optimum growth parameters to get high quality single crystals were 3.5 mm/h of growth rate and 20 rpm of rotation rate under the N₂ atmosphere. After the growth, color of crystals was appeared with pale blue due to the lack of oxygen, but it was disappeared after annealing at 1450℃ for 2 hr. Absorption coefficients were linearly increased depending on the concentration of Yb/sup 3+/ ions. Broad emission band was measured in the range of 1020 to 1050 nm with the peak intensity at 1031 nm and 1051 nm because of ²F/sub 5/2/(1)→²F/sub 7/2/(3) and ²F/sub 5/2/(1)→²F/sub 7/2/(4) transition respectively. When Yb/sup 3+/ ions were substituted with high rates, there were tendency to decrease the measured fluorescent lifetime for Yb ions depending on the concentration of Yb/sup 3+/ ions.

• Journal of the Optical Society of Korea
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• 제10권1호
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• pp.48-54
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• 2006

White-light scanning interferometry (WLI) and phase shifting interferometry (PSI) are increasingly used for surface topography measurements, particularly for areal measurements. In this paper, we compare surface profiling results obtained from above two optical methods with those obtained from stylus instruments. For moderately rough surfaces ($Ra{\approx}500\;nm$), roughness measurements obtained with WLI and the stylus method seem to provide close agreement on the same roughness samples. For surface roughness measurements in the 50 nm to 300 nm range of Ra, discrepancies between WLI and the stylus method are observed. In some cases the discrepancy is as large as 109% of the value obtained with the stylus method. By contrast, the PSI results are in good agreement with those of the stylus technique.

• Journal of the Optical Society of Korea
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• 제13권3호
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• pp.316-320
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• 2009

A novel broadband wavelength-swept Raman laser was used to implement Fourier-domain mode locked (FDML) swept-source optical coherence tomography (SS-OCT). Instead of a conventional semiconductor optical amplifier, this study used broadband optical fiber Raman amplification, over 50 nm centered around 1545 nm, using a multi-wavelength optical pumping scheme, which was implemented with the four laser diodes at the center wavelengths of 1425, 1435, 1455 and 1465 nm, respectively, and the maximum operating power of 150 mW each. The operating swept frequency of the laser was determined to 16.7 kHz from the FDML condition of 12 km optical fiber in the ring cavity. The OCT images were obtained using the novel broadband wavelengthswept Raman laser source.

• 대한화학회지
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• 제53권5호
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• pp.560-564
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• 2009

용액침전법에 의해 ZnO 및 $Zn_{0.95}Mn_{0.05}O$를 제조하였다. Mn이 5% 치환된 ZnO 시료는 순수한 ZnO의 띠 간격인 3.37 eV (380 nm 흡광)로부터 1.50 eV (800 nm 흡광)까지 띠 간격이 줄어들게 되어 자외선 영역 뿐 아니라 가시광선 전체 영역에서도 흡광이 발생하였다. 가시광선에서의 광촉매 활성에서도 $Zn_{0.95}Mn_{0.05}O$ 시료는 P-25보다도 더 높은 활성도를 나타냈다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.490-493
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• 2002

본 논문에서는 main gate와 side gate를 갖는 double gate MOSFET의 side gate 길이와 side gate 전압에 대한 최적의 값을 조사하였다. main gate 50nm에서 각각의 side gate 길이에 대한 최적의 side gate 전압은 대략 3V이다. 또한, main gate 길이에 대한 최적의 side gate 길이는 대략 70nm이다. 이때, side gate 길이에 대한 전달 컨덕턴스 및 subthreshold slope에 대한 값들을 나타내었다. 이때 소자의 특성 분석을 위해 ISE-TCAD를 사용하여 시뮬레이션 하였다.

• Journal of the Optical Society of Korea
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• 제16권3호
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• pp.299-304
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• 2012

A high angular tolerance spectral filter was realized incorporating an etalon, which consists of a $TiO_2$ cavity sandwiched between a pair of Ag/Ge mirrors. The effective angle was substantially extended thanks to the cavity's high refractive index. The device was created by embedding a 313-nm thick $TiO_2$ film in 16-nm thick Ag/Ge films through sputtering, with the Ge layer alleviating the roughness and adhesion of the Ag layer. For normal incidence, the observed center wavelength and transmission were ~900 nm and ~60%, respectively; throughout the range of $50^{\circ}$, the relative wavelength shift and transmission variation amounted to only ~0.06 and ~4%, respectively.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2004년도 춘계종합학술대회
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• pp.661-663
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• 2004

본 논문에서는 main gate와 side gate를 갖는 double gate MOSFET의 C-V 특성을 조사하기 위하여 side gate 길이와 side gate 전압을 변화시켜 조사하였다. Main gate 전압은 -5V에서 +5V까지 변화시켰으며, main gate 길이가 50nm, side gate 길이가 70nm, side gate 전압이 3V, drain 전압이 2V일때 우수한 C-V 특성을 얻었다. 이 때 소자의 특성 분석을 위해 ISE-TCAD를 사용하여 시뮬레이션 하였다.

• 열처리공학회지
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• 제25권2호
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• pp.85-89
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• 2012

Transparent conductive ZnO/Ag/ZnO (ZAZ) multilayer films were deposited by Radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering. The effects of post deposition vacuum annealing temperature on the structural, electrical and optical properties of the ZAZ multilayer films were investigated. The thickness of ZAZ films is kept constant at ZnO 50 nm/Ag 5nm/ZnO 45 nm, while the vacuum annealing temperatures were varied from 200 and $400^{\circ}C$, respectively. As-deposited ZAZ films exhibit a sheet resistance of $6.1{\Omega}/{\Box}$ and optical transmittance of 72.7%. By increasing annealing temperature to $200^{\circ}C$, the resistivity decreased to as low as $5.3{\Omega}/{\Box}$ and optical transmittance also increased to as high as 82.1%. Post-deposition annealing of ZAZ multilayer films lead to considerably lower electrical resistivity and higher optical transparency, simultaneously by increased crystallization of the films.

• 한국표면공학회지
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• 제29권3호
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• pp.157-162
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• 1996

The effects of microstructural change on the adhesion strength between Cu/Cr film and polyimide have been studied. Cr films (50 nm thick) and Cu films (500 or 1000 nm thick) were deposited on polyimide by DC magnetron sputtering. During Cu deposition the Ar pressure was 5 or 100 mtorr. The microstructure was observed by SEM and the adhesion was measured by T-peel test. Plastic deformation of peeled metal strips was characterized quantitatively by using XRD technique. The film in which Cu is deposited at 100 mtorr has higher adhesion strength than the film in which Cu is deposited at 5 mtorr. And in the film with same deposition pressure of 100 mtorr, the adhesion strength is increased as the deposited thickness increases from 500 to 1000 nm. The adhesion change of Cu/Cr can be interpreted as the difference in plastic deformation.

• Medical Lasers
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• 제8권1호
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• pp.39-42
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• 2019

A 50-year-old Korean female with oral erythro-leukoplakia was treated using a 532-nm Diode laser at 6 Watts with a pulsed width of 25 milliseconds. After two months following the laser treatment, the resected region was well-healed without any significant scar contracture. We suggest that the use of the 532-nm Diode laser can be a safe and effective treatment modality for patients suffering from oral leukoplakia.