• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1998년도 하계종합학술대회논문집
• /
• pp.409-412
• /
• 1998

BCl/sub 3/ 및 Cl/sub 2/ 반응가스를 사용하여 RIE 장치로 GaN의 건식식각을 연구하였다. RF 전력, 반응가스의 유량 및 반응가스의 혼합비 등의 변화에 따른 최적의 식각공정 조건 및 결합특성을 연구하였다. RF 전력에 따른 GaN의 식각율은 챔버압력 25mTorr, BCl/sub 3/ 유량 40 sccm의 조건에서 RF 전력이 100W일때 17nm/min을 얻었다. BCl/sub 3/의 유량에 따른 식각율은 RF 전력 100W 챔버압력 20mTorr, Cl/sub 2/ 유량 5sccm의 조건에서 BCl/sub 3/ 유량이 40 sccm일때 65nm/min을 얻었다. Cl/sub 2//BCl/sub 3/ 혼합가스 비율에 따른 식각율은 Cl/sub 2/ 유량을 5sccm으로 고정하고 BCl/sub 3/ 유량을 변화시켰을때 RF 전력 100W 및 챔버압력 20mTorr의 조건에서 혼합비가 0.25일때 50nm/min을 얻었다. RF 전력에 따른 PR의 식각율은 챔버압력 25mTorr, Cl/sub 2/ 유량 0 sccm 및 BCl/sub 3/ 유량 40 sccm의 조건에서 RF 전려이 100W일때 15nm/min을 얻었다. 또한, 챔버압력 20mTorr, Cl/sub 2/ 유량 5 sccm 및 BCl/sub 3/ 유량 20sccm의 조건에서 RF 전력이 100W 일때 82nm/min을 얻었다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제8권1호
• /
• pp.11-20
• /
• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• Transactions on Electrical and Electronic Materials
• /
• 제18권6호
• /
• pp.364-369
• /
• 2017

Double molybdate $NaGd_{1-x}(MoO_4)_2:Ho^{3+}/Yb^{3+}$ phosphors with proper doping concentrations of $Ho^{3+}$ and $Yb^{3+}$ ($x=Ho^{3+}+Yb^{3+}$, $Ho^{3+}=0$ and 0.05, and $Yb^{3+}=0$, 0.35, 0.40, 0.45, and 0.50) were successfully synthesized using the microwave sol-gel method. Well-crystallized particles formed after heat-treatment at $800^{\circ}C$ for 16 h showed fine and homogeneous morphologies with particle sizes of $1{\sim}3{\mu}m$. The spectroscopic properties were examined using photoluminescence emission and Raman spectroscopy. Under excitation at 980 nm, the upconversion doped samples exhibited strong yellow emissions, from the combination of strong emission bands at 545 nm and 655 nm in the green and red spectral regions, respectively. The strong 545 nm emission band in the green region corresponded to the $^5S_2/^5F_4{\rightarrow}^5I_8$ transition in the $Ho^{3+}$ ions, while the strong 655 nm band in the red region appeared because of the $^5F_5{\rightarrow}^5I_8$ transition in the $Ho^{3+}$ ions. The pump power dependence and the Commission Internationale de L'Eclairage chromaticity of the upconversion emission intensity were evaluated in detail.

• 한국재료학회지
• /
• 제26권1호
• /
• pp.29-34
• /
• 2016

$NaLa_{1-x}{(MoO_4)}_2$:$Ho^{3+}/Yb^{3+}$ phosphors with the correct doping concentrations of $Ho^{3+}$ and $Yb^{3+}$ ($x=Ho^{3+}+Yb^{3+}$, $Ho^{3+}=0.05$ and $Yb^{3+}=0.35$, 0.40, 0.45 and 0.50) were successfully synthesized by the microwave-modified sol-gel method. Well-crystallized particles formed after heat-treatment at $900^{\circ}C$ for 16 h showed a fine and homogeneous morphology with particle sizes of $3-5{\mu}m$. The optical properties were examined using photoluminescence emission and Raman spectroscopy. Under excitation at 980 nm, the UC intensities of the doped samples exhibited strong yellow emissions based on the combination of strong emission bands at 545-nm and 655-nm emission bands in green and red spectral regions, respectively. The strong 545-nm emission band in the green region corresponds to the $^5S_2/^5F_4{\rightarrow}^5I_8$ transition in $Ho^{3+}$ ions, while the strong emission 655-nm band in the red region appears due to the $^5F_5{\rightarrow}^5I_8$ transition in $Ho^{3+}$ ions. Pump power dependence and Commission Internationale de L'Eclairage chromaticity of the upconversion emission intensity were evaluated in detail.

• 한국미생물·생명공학회지
• /
• 제18권3호
• /
• pp.221-226
• /
• 1990

Bacillu circulans F-2를 포함한 B.circulans의 prophage와 bacteriocin을 검출하기 위하여, mitomycin C를 처리하고 전자현미경상, plaque 형성능(plaque-forming activity), 세균세포살균능(killing activtiy)을 실험했다. killing activity 양성균으로부터 서당밀도균배원심(sucrose gradient centrifugation)을 통해 bacteriophage-like particle의 존재를 확인하였다. 이들 입자들은 형태학적으로 phage tail 또는 T4 phage와 닮은 구조를 가지고 있었다.

• Korean Journal of Acupuncture
• /
• 제36권4호
• /
• pp.189-199
• /
• 2019

Objectives : This study aimed to investigate the effects of electroacupuncture (EA), the laser acupuncture (LA) and the combination therapy (LA+EA) in a collagenase-induced osteoarthritis rat model. Methods : Osteoarthritis rat model was induced by injection of collagenase into left lower articular cavity (50 μl to knee and 10 μl to ankle). In order to assess the anti-osteoarthritic effects of EA, the 650 nm LA and 650 nm LA+EA, the histopathological findings and plantar withdrawal responses were analyzed. Results : All of the treatment methods used in this study were effective in reducing pain. All treatment groups were effective in decreasing inflammatory cytokines of TNF-a and IL-6; the 650 nm LA and 650 nm LA+EA groups significantly reduced IL-1β. Conclusions : 650 nm LA and EA inhibit the production of collagenase-induced inflammatory mediators of osteoarthritis.

• 한국광학회지
• /
• 제9권6호
• /
• pp.403-407
• /
• 1998

단일모드 출력을 얻기 위해, 횡자장을 걸었을 때와 걸지 않았을 때 내부 반사경 543 nm 헬륨 네온 레이저의 편광특성을 조사하였다. 레이저 출력이 선편광일 때 두 개의 직교하는 편광성분을 측정하였다. 자장을 가하지 않고 레이저 주파수를 이득곡선상에서 주사하였을 경우, 편광 불안정이 크게 발생하였다. 레이저 고유편광에 대하여 35$^{\circ}$방향으로 50 gauss의 횡자장을 가하였을 때 편광 불안정을 억제할 수 있었다. 같은 조건에서 543 nm 헬륨 네온 레이저 주파수를 요오드 분자의 포화 흡수분광선에 안정화시키는데 필요한 880 MHz 대역폭 안에서 안정된 단일모드 동작을 얻을 수 있었다.

• KSBB Journal
• /
• 제25권5호
• /
• pp.459-465
• /
• 2010

A simple and efficient analytical method for the simultaneous determination of seven tar color additives was developed using ion pair high performance liquid chromatography. The conditions for HPLC analysis were as follows: column, ${\mu}$-Bondapak C18 (10 ${\mu}m$, 300 ${\times}$ 3.9 mm i.d.); gradient mobile phase, 0.025 mol/L ammonium acetate (containing 0.01 mol/L tetrabutylammonium bromide)-acetonitrile-methanol (65:25:10) as a mobile for fraction A and 0.025 mol/L ammonium acetate (containing 0.01 mol/L tetrabutylammonium bromide)-acetonitrilemethanol (40:50:10) as a mobile for fraction B; flow rate, 1.0 mL/ min; detection wavelength, 254/520/620 nm. We could attain to the detection limits as 0.01~0.05 ${\mu}$g/mL (254 nm) and 0.005~0.01 ${\mu}$g/mL (520 nm) for six red tar color additives, and 0.05 ${\mu}$g/mL (254 nm) and 0.002 ${\mu}$g/mL (620 nm) for Fast green FCF. This analytical method was applicable to determine the tar color additives contained in several commercial cold syrups.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권5호
• /
• pp.558-563
• /
• 1995

Dynamic characteristics of TbFeCo magneto-optical recording media at 680nm wavelength region were studied by means of computer simulation of disc structure and optimization of process variables during sputter deposition. With the slightly reduced Kerr rotation angle due to the reduced wavelength of optical laser source, the improved recording density in TbFeCo magneto optical media showing the CNR greater than 50dB could be achieved by only adjusting the thickness of dielectric and the recording layers when the wavelength of light source is changed from 780nm to 680nm. In addition, the recording power margin of 5mW and the 2mW minimum recording power was realized, It was shown from the present study that the increase in laser power density demonstrated feasibility of low cost and low power laser diode with the reduced optimum recording power.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.505-506
• /
• 2007

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc/$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL 14004).