• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.288-288
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• 2010

Photonic Force Microscope (PFM) is a scanning force microscope using an optical trap with several piconewton. In PFM, we can have topological information from the bead position trapped in optical trap. Typically the resolutions of lateral and vertical position are 40 nm and 50 nm respectively. To improve the vertical resolution below 10 nm, we use resonance energy transfer which has 5nm resolution in distance. Here we show preliminary results, including performances of scanning bead and fluorescence imaging system.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.19.2-19.2
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• 2009

ITO는 n형 반도체 특성을 가지며 이와 동시에 높은 가시광투과율과 낮은 전기전도도를 가짐으로써 다양한 투명전극소재와 가스 검출센서로 많이 활용되고 있다. 본 연구에서는 RF magnetron sputtering 법을 이용하여 상온에서 glass 기판 위에 두께 100nm로 ITO 그리고 하층 ITO 박막 (두께 50 nm) 위에 층간 금속 (두께 5 nm)을 증착하고 다시 상부 ITO 박막 (두께 45 nm)을 증착하여 3층의 적층형 박막센서를 제작하였다. 층간 금속으로는 Au와 Cu를 각각 사용하였다. 박막 증착 후엔 진공분위기에서 $150^{\circ}C$, $300^{\circ}C$로 열처리 과정을 거쳐 열처리 전후의 물성 및 감지특성을 비교해보았다. 분석방법으로는 XRD, SEM, AFM, Hall effect 장치 등을 이용하였다. 분석 결과 $300^{\circ}C$에서 진공 열처리한 ITO/Au/ITO(IAI) 박막센서가 높은 결정화도 와 전기적 특성이 나타났으며, 0 에서 1000ppm 까지의 메탄가스의 민감도 측정에서도 열처리된 IAI 박막센서가 기존의 ITO 박막센서보다도 약 70% 정도 향상된 민감도를 나타내었다.

• Journal of the Mineralogical Society of Korea
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• v.3 no.2
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• pp.98-108
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• 1990

전자현미분석외에 금-은 고용체의 금 또는 은 성분을 결정할 수 있는 간편하고도 신뢰성 높은 측정법 개발은 응용 광물학자들에게 오랜 연구과제가 되어 왔다. 이를 달성하기 위한 방법으로 정량적으로 측정할 수 있는 단위포 상수, 반사도, 비중, 미경도 측정연구를 실시하였다. 이 실험을 위해 순수한 원소 금과 은을 5 at.% 간격으로 혼합하여 시료를 제작한 후 석영관을 사용하여 진공하에서 밀봉하였다. 고온에서 가열하여 용융시킨 후 서냉하여 얻어진 반응물을 각종 현미경, X 선 회절분석기, 전자현미분석기, 반사도측정기, 비중저울, 미경도측정기를 사용하여 분석하였다. 직경이 114.6 nm 인 Debye-Scherrer 카메라를 사용해 얻은 X 선분말회절자료로 계산한 단위포 상수의 크기는 은함량이 증가함에 따라 일정하게 증가한다. 반사도 측정에는 480nm와 546nm 두파장을 사용하였는데 두 파장 모두에 대해 은 함량이 증가할수록 반사도가 증가한다. 또한 480nm를 사용했을 때의 반사도 변화가 현저하므로 유용하다. 비중은 은 함량이 증가할수록 오히려 일정하게 감소한다. 한편, 25g과 50g 추를 사용하여 측정한 미경도 값은 금-은고용체내의 성분변화에 관계없이 불규칙하게 변하여 어떤 경향을 나타내지 않는다.

• Current Applied Physics
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• v.18 no.11
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• pp.1185-1189
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• 2018

Thickness-dependent magnetic domain structure of ultrathin Co wedge films (0.3 nm-1.0 nm) sandwiched by Pt layers was investigated by scanning transmission x-ray microscopy (STXM) employing X-ray magnetic circular dichroism (XMCD), utilizing elliptically polarized soft x-rays and electromagnetic fields, with a spatial resolution of 50 nm. The magnetic domain images measured at the Co $L_3$ edge showed the evolution of the magnetic domain structures from maze-like form to the bubble-like form as the perpendicular magnetic field was applied. The asymmetric domain expansion of a 500 nm-scale bubble domain was also measured when the in-plane and perpendicular external magnetic field were applied simultaneously.

• Journal of the Korean Chemical Society
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• v.50 no.6
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• pp.440-446
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• 2006

ZnO nanoparticles were prepared by laser ablation of the ZnO powder dispersed in deionized water and surfactant solutions, and characterized using UV-VIS absorption spectroscopy, X-ray diffractometer and Transmission electron microscopy(TEM). ZnO nanoparticles produced show the pure ZnO crystal state without mixed state with Zn(OH)2 or Zn, and have the band gap energy of 3.35 eV, which is comparable to that of bulk ZnO. While ZnO nanoparticles prepared in SDS solution have the average diameter of 28nm with near spherical shape, those prepared in CTAB solution have the average size of 40 nm with mainly rod-like shape. ZnO colloidal solution of CTAB is more stable than that of SDS. These difference according to surfactants can be explained by difference of electrostatic interaction between surface charge of ZnO and surfactant molecules and by solvation effect in solution.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.117-123
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• 2004

A 30 nm $In_{0.7}GaAs$ High Electron Mobility Transistor (HEMT) with triple-gate has been successfully fabricated using the $SiO_2/SiN_x$ sidewall process and BCB planarization. The sidewall gate process was used to obtain finer lines, and the width of the initial line could be lessened to half by this process. To fill the Schottky metal effectively to a narrow gate line after applying the developed sidewall process, the sputtered tungsten (W) metal was utilized instead of conventional e-beam evaporated metal. To reduce the parasitic capacitance through dielectric layers and the gate metal resistance ($R_g$), the etchedback BCB with a low dielectric constant was used as the supporting layer of a wide gate head, which also offered extremely low Rg of 1.7 Ohm for a total gate width ($W_g$) of 2x100m. The fabricated 30nm $In_{0.7}GaAs$ HEMTs showed $V_{th}$of -0.4V, $G_{m,max}$ of 1.7S/mm, and $f_T$ of 421GHz. These results indicate that InGaAs nano-HEMT with excellent device performance could be successfully fabricated through a reproducible and damage-free sidewall process without the aid of state-of-the-art lithography equipment. We also believe that the developed process will be directly applicable to the fabrication of deep sub-50nm InGaAs HEMTs if the initial line length can be reduced to below 50nm order.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.5
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• pp.128-133
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• 2013

In this paper, octagonal inductors for RFIC designs was fabricated with 90nm CMOS Technology to compare its quality factor and the effective inductance as functions of radius and number of turn. The quality factor decreases as the inner radius and the number of metal turned increase. However, the effective inductance increases with the increasing the inner radius and the number of metal turned. Therefore, the inductor structure should be decided according to the relative importance of Q-factor and inductance.

• Korean Journal of Agricultural Science
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• v.49 no.1
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• pp.129-136
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• 2022

In this study, we aimed to develop a maturity classification model for tomatoes using hyperspectral imaging in the range of 400 - 1,000 nm. Fifty-seven tomatoes harvested in August and November of 2021 were used as the sample set, and hyperspectral data was extracted from the surfaces of these tomatoes. A combined method of SNV (standard normal variate) and SG (Savitzky-Golay) methods was used for the pre-processing of the hyperspectral data. In addition, the hyperspectral data were analyzed for all maturity stages and considering bandwidths with different FWHM (full width at half maximum) values of 2, 25, and 50 nm. The PCA (principal component analysis) method was used to analyze the principal components related to maturity stages for the tomatoes. As a result, 500 - 550 nm and 650 - 700 nm bands were found to be related to the maturity stages of tomatoes. In addition, PC1 and PC2 explained approximately 97% of the variance at all FWHM conditions and thus were used as input data for classification model training based on the SVM (support vector machine). The SVM models were able to classify tomato maturity into five stages (Green, Turning, Pink, Light red, and Red) with over 95% accuracy regardless of the FWHM condition. Therefore, it was considered that hyperspectral data with 50 nm FWHM and SVM is feasible for use in the classification of tomato maturity into five stages.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.191-195
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• 2004

Tunnel junctions with AI-N barriers fabricated by microwave-excited plasma were studied. When the Al thickness, nitridation time, and annealing temperature were 1 nm (0.8 nm), 50 s (35 s), and $280^{\circ}C$ ($300^{\circ}C$), TMR ratio and resistance-area product (RA) were 49% (34%) and $3 ${\times}$ 10^4$ $\Omega$$\mu\m^2$ ($1.5 ${\times}$ 10^4$ $\Omega$$\mu\m^2$), respectively. In order to clarify the annealing temperature dependence of TMR ratio, the local transport properties were measured for Ta 5 nm/Cu 20 nm/Ta 5 nm$29_{76}$ $Fe_{24}$ 2 nm/Cu 5 nm/M $n_{75}$$Ir_{25}$ 10 nm/ $Co_{71}$ $Co_{29}$ 4nm/Al-N junction with Al thickness of 0.8 nm and nitridation time of 35s at various temperatures. The increase of TMR ratio after annealing at $300^{\circ}C$, where the TMR ratio of the corresponding MTJ had the maximum value of 34%, can be well explained by the enhancement of the average barrier height ($\Phi_{ave}$) and the reduction of its fluctuation. After further annealing at $340^{\circ}C$, the leakage current was observed and the TMR ratio decreaseded

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.224-224
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• 2016

Many researchers have been tried to improve the performance of the phosphorescent organic light-emitting diode(PHOLED) by controlling of the dopant profile in the emission layer. In this work, as shown in Fig. 1 insert, a typical red PHOLED device which has the structure of ITO/NPB(50nm)/CBP(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) is fabricated with a 5nm thick doping section in the emission layer. The doping section is formed by co-deposition of CBP and Ir(btp)2acac with a doping concentration of 8%, and it's location(x) is changed from HTL/EML interface to EML/HBL in 5nm steps. The current efficiency versus current density of the devices are shown in Fig. 1. By changing the location of doping section, as shown in Fig. 1 and 2, at x=5nm, the efficiency shows the maximum of 3.1 cd/A at 0.5 mA/cm2 and it is slightly decreased when the section is closed to HTL and slightly increased when the section is closed to HBL. If the doping section is closed to HTL(NPB) the excitons can be quenched easily to NPB's triplet state energy level(2.5eV) which is relatively lower than that of CBP(2.6eV). Because there is a hole accumulation at EML/HBL interface the efficiency can be increased slightly when the section is closed to HBL. Even the thickness of the doping section is only 5nm,. the maximum efficiency of 3.1 cd/A with x=5 is closed to that of the homogeneously doped device, 3.3 cd/A, because the diffusion length of the excitons is relatively long. As a result, we confirm that the current efficiency of the PHOLED can be improved by the doping profile optimization such as partially, not homogeneously, doped EML structure.