• The Journal of Korean Medicine
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• v.25 no.1
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• pp.31-39
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• 2004

Objectives : The purpose of this study is to report the relationship between iridological constitution and interleukin 1 beta (IL-1 $\beta$) gene polymorphism. Methods : Iris constitution were diagnosed by automatic Iris analysis system, Bexel Irina(Korea). The blood was stored at - $20^{\circ}$... until it was ready to be extracted. The genomic DNA was extracted by inorganic procedure. The concentration of DNA was estimated by absorbance at 260 nm. The interleukin-1 beta (IL-1 $\beta$) gene polymorphism was detected by PCR amplification. Results & Conclusions : The author classified 166 individuals according to Iris constitution, and determined IL-1 $\beta$ genotype. The frequencies of Iris constitutions as follows : neurogenic type, 41 (24.7%); abdominal connective tissue weakness type, 53(31.9%); cardio-renal connective tissue weakness type, 50 (30.1%); the others type, 22 (13.3%). Especially, the frequency of abdominal connective tissue weakness type was significantly higher in err genotype than in the remaining constitutions. As a result, The author demonstrated the association among IL-1 $\beta$ genotype, IBD and Iris constitution.

• Journal of Oral Medicine and Pain
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• v.24 no.3
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• pp.269-280
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• 1999

구강안면동통환자의 발통점에 대한 보존적 치료방법중 저출력레이저의 효과를 평가하기 위해 교근, 측두근과 승모근에 발통점을 가진 치과대학생 69명을 무작위로 분류하여 37명에게는 GaAlAs 반도체 레이저를 조사하였고 나머지 32명은 레이저를 실제로 조사하지 않고 대조군으로 삼았다. 50mW, 820nm의 GaAlAs 반도체 레이저를 이용하여, 4주 동안 첫 주는 2회, 이후 3주 동안 1회씩 총 5회 조사하였고 전자통각계를 이용하여 압력통각역치를 측정한 후 이를 대조군과 비교한 바 다음과 같은 결과를 얻었다. 1. 남녀 및 조사군과 비조사군의 치료 전 압력통각역치는 차이가 없었다. 2. 조사군의 각 근육에서 측정한 압력통각역치는 레이저 치료 2주 후부터 유의하게 높아졌으나 비조사군에서는 차이가 없었다, 3. 비조사군의 치료 전, 후 압력통각역치에는 성 차가 없었다. 반면 종사군의 압력통각역치는 치료 전에는 성 차가 없었으나 치료 후에는 남성이 여성보다 유의하게 높았다.

• Journal of the Korea Institute of Military Science and Technology
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• v.21 no.3
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• pp.295-305
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• 2018

We present a passively Q-switched monolithic Er:Yb:glass microchip laser developed in our lab. The microchip laser can produce pulses at 1535 nm of the 'eye-safe' wavelengths with the pulse energy of 50 uJ and the pulse width of 4-6 ns. Using the laser we also designed and developed a pulsed Er:Yb:glass microchip laser rangefinder. Expressions for background and signal power, noise, and signal-to-noise ratio are reviewed. A computer simulation was used to optimize laser power, receiver aperture, and preamplifier bandwidth for the efficient system design of the laser rangefinder. Experimental results are presented to compare with the theory.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.272-272
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• 2014

SnO thin films, 100 nm in thickness, were deposited on glass substrates by RF magnetron sputtering. A stack structure of $SnO_2/SnO$, where few nanometers of $SnO_2$ were determined on the SnO thin film by X-ray photoelectron spectroscopy. In addition, XPS depth profile analysis of the pristine and heat treated thin films were introduced. The electrical behavior of the as-sputtered films during the annealing was recorded to investigate the working conditions for the SnO sensor. Subsequently, The NH3 sensing properties of the SnO sensor at operating temperature of $50-200^{\circ}C$ were examined, in which the p-type semiconducting sensing properties of the thin film were noted. The sensor shows good sensitivity and repeatability to $NH_3$ vapor. The sensor properties toward several gases like $H_2S$, $CH_4$ and $C_3H_8$ were also introduced. Finally, a sensing mechanism was proposed and discussed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.27.2-27.2
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• 2010

In recent years, there is a strong requirement of low cost, stable microelectro mechanical systems (MEMS) for resonators, microswitches and sensors. Most of these devices consist of freely suspended microcantilevers, which are usually made by the etching of some sacrificial materials. Herein, we have attempted to use Si nanowires, inherited from the parent Si wafer, as a sacrificial material due to its porosity, low cost and ease of fabrication. Prior to the fabrication of the Si nanowires silver nanoparticles were continuously formed on the surface of Si wafer. Vertically aligned Si nanowires were fabricated from the parent Si wafers by aqueous chemical route at $50^{\circ}C$. Afterwards, the morphological and structural characteristics of the Si nanowires were investigated. The morphology of nanowires was strongly modulated by the resistivity of the parent wafer. The 3-step etching of nanowires in diluted KOH solution was carried out at room temperature in order to control the fast etching. A layer of $Si_3N_4$ (300 nm) was used for the selective fabrication of nanowires. Finally, a freely suspended bridge of zinc oxide (ZnO) was fabricated after the removal of nanowires from the parent wafer. At present, we believe that this technique may provide a platform for the inexpensive fabrication of futuristic MEMS.

• Korean Journal of Materials Research
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• v.27 no.2
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• pp.69-75
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• 2017

To establish low-temperature process conditions, process-property correlation has been investigated for Ga-doped ZnO (GZO) thin films deposited by pulsed DC magnetron sputtering. Thickness of GZO films and deposition temperature were varied from 50 to 500 nm and from room temperature to $250^{\circ}C$, respectively. Electrical properties of the GZO films initially improved with increase of temperature to $150^{\circ}C$, but deteriorated subsequently with further increase of the temperature. At lower temperatures, the electrical properties improved with increasing thickness; however, at higher temperatures, increasing thickness resulted in deteriorated electrical properties. Such changes in electrical properties were correlated to the microstructural evolution, which is dependent on the deposition temperature and the film thickness. While the GZO films had c-axis preferred orientation due to preferred nucleation, structural disordering with increasing deposition temperature and film thickness promoted grain growth with a-axis orientation. Consequently, it was possible to obtain a good electrical property at relatively low deposition temperature with small thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.75-79
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• 2003

We studied InP etch results in high density planar inductively coupled $BCl_3$ and $BCl_3$/Ar plasmas. The investigated process parameters were ICP source power, RIE chuck power, chamber pressure and $BCl_3$/Ar gas composition. It was found that increase of ICP source power and RIE chuck power raised etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness < 2 nm) with a moderate etch rate ($300\;{\sim}\;500\;{\AA}/min$) after the planar $BCl_3/Ar$ ICP etching. It may make it possible to open a new regime of InP etching with $CH_4/H_2$ - free plasma chemistry. Some amount of Ar addition (< 50%) also improved etch rates of InP, while too much Ar addition reduced etch rates of InP.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.860-862
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• 1999

we have grown vertically aligned carbon nanotubes on a large area of Co-Ni codeposited Si substrates by thermal chemical vapor deposition using $C_{2}H_{2}$ gas. The carbon nanotubes grown by the thermal chemical vapor deposition are multi-wall structure, and the wall solace of nanotubes is covered with defective carbons or carbonaceous particles. The carbon nanotubes range from 50 to 120nm in diameter and about $130{\mu}m$ in length at $950^{\circ}C$. The turn-on voltage was about $0.8V/{\mu}m$ with a current density of $0.1{\mu}A/cm^2$ and emission current reveals the Fowler-Nordheim mode.

• Transactions on Electrical and Electronic Materials
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• v.4 no.1
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• pp.15-20
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• 2003

NiCr alloys are prepared onto poly-Si/ $SiO_2$/Si substrates to replace Pt bottom electrode with a new one for integration of high dielectric constant materials. Alloys deposited at Ni and Cr power of 40 and 40 W showed optimum properties in the composition of N $i_{1.6}$C $r_{1.0}$. The grain size of films increases with increasing deposition temperature. The films deposited at 50$0^{\circ}C$ showed a severe agglomeration due to homogeneous nucleation. The NiCr alloys from the rms roughness and resistivity data showed a thermal stability independent of increasing annealing temperature. The 80 nm thick BST films deposited onto N $i_{1.6}$C $r_{1.0}$/poly-Si showed a dielectric constant of 280 and a dissipation factor of about 5 % at 100 kHz. The leakage current density of as-deposited BST films was about 5$\times$10$^{-7}$ A/$\textrm{cm}^2$ at an applied voltage of 1 V. The NiCr alloys are possible to replace Pt bottom electrode with new one to integrate f3r high dielectric constant materials.terials.

• Journal of Powder Materials
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• v.22 no.4
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• pp.278-282
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• 2015

The GaN-powder scrap generated in the manufacturing process of LED contains significant amounts of gallium. This waste can be an important resource for gallium through recycling of scraps. In the present study, the influence of annealing temperatures on the structural properties of GaN powder was investigated when the waste was recycled through the mechanochemical oxidation process. The annealing temperature varied from $200^{\circ}C$ to $1100^{\circ}C$ and the changes in crystal structure and microstructure were studied. The annealed powder was characterized using various analytical tools such as TGA, XRD, SEM, and XRF. The results indicate that GaN structure was fully changed to $Ga_2O_3$ structure when annealed above $900^{\circ}C$ for 2 h. And, as the annealing temperature increased, crystallinity and particle size were enhanced. The increase in particle size of gallium oxide was possibly promoted by powder-sintering which merged particles to larger than 50 nm.