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Luminescence Properties of $Dy^{3+}-(or Tm^{3+}-)$ Doped $Ga_2O_3$ and $ZnGa_2O_4$ Phosphors

  • Ryu, Ho-Jin;Park, Hee-Dong
    • The Korean Journal of Ceramics
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    • v.3 no.2
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    • pp.134-138
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    • 1997
  • $Dy^{3+}-(or Tm^{3+}-)$ doped $Ga_2O_3 \;and\; ZnGa_2O_4$ phosphors were prepared using the solid state reaction method to investigate their photoluminescent characteristics. Under 254 nm excitation, $Dy^{3+}-doped Ga2_O_3$ exhibited two emission bands of 460~505nm and 570~600nm. On the other hand, $Dy^{3+}-(or Tm^{3+}-)$ doped $ZnGa_2O_4 $phosphors exhibited a broad-band emission extending from 330 nm to 610 nm, peaking at about 430 nm(or 370 nm). In this study, an emission peak shift of nealy 50 nm towards longer wavelength region was observed with $Dy^{3+}$ doping in the $ZnGa_2O_4 $.

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Inactivation of Candida albicans Biofilm by Radachlorin-Mediated Photodynamic Therapy (라다클로린으로 매개된 광역학치료에 의한 백색 캔디다 바이오필름의 비활성)

  • Kwon, Pil Seung
    • Korean Journal of Clinical Laboratory Science
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    • v.47 no.4
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    • pp.273-278
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    • 2015
  • The purpose of this study was to evaluate the in-vitro efficacy of PDT using red light emitting diode (LED) with Radachlorin for biofilm inhibition of clinical Candida albicans isolates. The suspensions containing C. albicans at $9{\times}10^8CFU/mL$ were prepared on yeast nitrogen base containing 5% glucose. The biofilm formation was grown for 3 h after seeding suspensions each 100 ul on a 96-well plate and then supernatant was discarded. Each well was treated with $0.39{\mu}g/mL$ from $50{\mu}g/mL$ concentrations of Radachlorin on adherent biofilm. After a 30-minute incubation, light was irradiated for 30, 60, or 90 minutes using the following light source of wavelength 630 nm LED, at energy densities of 14, 29, and $43J/cm^2$. Afterwards, all supernatant was removed and dried. Adherent cells were stained with safranin O and dried. The cell viability was measured using a microplate reader at 490 nm. Also, a fluorescent signal on C. albicans was observed by saturation of a photosensitizer. In conclusion, a significant inhibition of 72.5% was observed to C. albicans on biofilm at the Radachlorin dose of $50{\mu}g/mL$ with 630 nm LED. The Photosensitizer (Radachlorin) was adequate at 30 minuttes for C. albicans. Overall, the results showed that inhibition of biofilm formation was Radachlorine dose-dependent. The results suggest that PDT, using Radachlorin with 630 nm LED, is able to decrease biofilm formation of C. albicans.

Measurement of Distributed Temperature and Strain Using Raman OTDR with a Fiber Line Including Fiber Bragg Grating Sensors (광섬유 브래그 격자 센서가 있는 광섬유 라인에 라만 OTDR을 이용한 분포 온도 및 변형률 측정 가능성에 대한 연구)

  • Kwon, Il-Bum;Byeon, Jong-Hyun;Jeon, Min-Yong
    • Journal of the Korean Society for Nondestructive Testing
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    • v.36 no.6
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    • pp.443-450
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    • 2016
  • In this study, we propose a novel fiber optic sensor to show the measurement feasibility of distributed temperature and strains in a single sensing fiber line. Distributed temperature can be measured using optical time domain reflectometry (OTDR) with a Raman anti-Stokes light in the sensing fiber line. Moreover, the strain can be measured by fiber Bragg gratings (FBGs) in the same sensing fiber line. The anti-Stokes Raman back-scattering lights from both ends of the sensing fiber, which consists of a 4 km single mode optical fiber, are acquired and inserted into a newly formulated equation to calculate the temperature. Furthermore, the center wavelengths from the FBGs in the sensing fiber are detected by an optical spectrum analyzer; these are converted to strain values. The initial wavelengths of the FBGs are selected to avoid a cross-talk with the wavelength of the Raman pulsed pump light. Wavelength shifts from a tension test were found to be 0.1 nm, 0.17 nm, 0.29 nm, and 0.00 nm, with corresponding strain values of $85.76{\mu}{\epsilon}$, $145.55{\mu}{\epsilon}$, $247.86{\mu}{\epsilon}$, and $0.00{\mu}{\epsilon}$, respectively. In addition, a 50 m portion of the sensing fiber from $30^{\circ}C$ to $70^{\circ}C$ at $10^{\circ}C$ intervals was used to measure the distributed temperature. In all tests, the temperature measurement accuracy of the proposed sensor was less than $0.50^{\circ}C$.

An extension of new laser pulse atom-probe construction and time-of-flight mass spectrum of $H_2$ and He gas (A new laser pulse atom-probe 제작 및 $H_2$ 가스와 He 가스의 time-of-flight mass spectrum)

  • 송순달;홍남관
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.3
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    • pp.465-472
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    • 1997
  • An extension of new test methods for surfaces with an apparatus based on photon-induced desorption and ionisation in the electric field, is constructed and tested, It also investigates how to show the efficiency of the arrangement adsorbates $H_2$ and He on W(110). The field emitter temperature was 80 K. The wavelength of light used was 193 nm with field strengths between 10 and 50 V/nm. Many ion fragments($CO^+, He^+, H_2^^+, H_2O^+, W^{3+}\; and\; W^{2+}$) were produced by an electronic stimulation of the adsorbate with the help of a photon energy of 6.4 eV at He and $H_2$/W(110). A transient recorder enables the registration of the entire mass spectrum.

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Diffuse Reflectance Enhancement through Wrinkling of Nanoscale Thin Films (나노스케일 박막의 표면주름 형성을 통한 산란반사도 향상)

  • Kim, Yun Young
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.39 no.12
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    • pp.1245-1249
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    • 2015
  • This study investigated the reflection spectra of wrinkled metal/polymer multilayers. A wavy surface was self-assembled by annealing an aluminum-coated poly(methyl metacrylate) layer on a silicon substrate. The total and diffuse reflectance characteristics of the sample with additional metal coatings(aluminum or silver) were evaluated in the visible wavelength(400~800 nm) using a spectrophotometer. The results showed that the wrinkled surface enhanced the diffuse reflectance up to 40~50% in the lower-wavelength range, demonstrating its potential for applications to optical thin-film devices.

Emission Properties of OLED Devices with Various Hole Injection Materials (정공주입층에 따른 OLED 소자의 발광 특성)

  • Lee, Bong-Sub;Gao, Xin-Wei;Park, Jong-Yek;Baek, Yong-Gu;Yang, Jae-Woong;Paek, Kyeong-Kap;Ju, Sung-Hoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.6
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    • pp.562-568
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    • 2008
  • In this paper, the hole injection layer(HIL) materials have been synthesized and analyzed. Their HOMO levels are $4.93{\sim}5.22\;eV$, and their energy band gaps are $2.74{\sim}3.19\;eV$. Their glass transition temperatures($T_g$) are all above $114^{\circ}C$, which implies that they are highly thermal-stable. The green OLED devices with a structure of ITO(150 nm)/NEW_HIL(50 nm)/NPB(30 nm)/$Alq_3$(50 nm)/Al:Li(100 nm) were fabricated and tested, incorporating these newly synthesized HIL materials. According to the test results of OLED devices, the I-V-L performances of these devices increase in the following sequence: ELM307 > ELM200 > ELM321 > ELM327 > ELM325. In addition, the OLED device with ELM307 as a HIL has the highest brightness and efficiency at the same driving voltage. These experimental results have shown that ELM307 can be used as one of the most promising candidates for HIL materials.

Light-Emission Characteristics of Organic Light-Emitting Diodes Driven by Alternating Current (교류 전압 구동에 의한 유기 발광 소자의 발광 특성 연구)

  • Kwon, Ow-Tae;Kim, Tae-Wan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.10
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    • pp.625-629
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    • 2016
  • Electrical and optical properties of the AC voltage driven organic light-emitting diodes were investigated by measuring the electroluminescence of the device. Device structure of ITO(170 nm)/TPD(40 nm)/Alq3(60 nm)/LiF(0.5 nm)/Al(100 nm) was manufactured using a thermal evaporation. Sinusoidal and square-type AC voltage was applied to the device using a function generator. Amplitude of the applied voltage was 9.0 V, and a frequency was varied from 50 Hz to 50 kHz. Electroluminescence out of the device was measured in a Si photodetector simultaneously with the applied voltage together. An intensity and a delayed residual luminescence from the device were depended on the frequency of the sinusoidal voltage. It is thought to be due to a contribution of the capacitive nature in the equivalent circuit of the device. An electron mobility was estimated using a time constant obtained from the luminescence of the device driven by the square-type AC voltage.

금속이 코팅된 PET필름의 수분침투 특성 평가

  • Hwang, Bin;Choe, Yeong-Jun;Park, Gi-Jeong;Kim, Hoe-Bong;Jo, Yeong-Rae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.351-351
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    • 2010
  • OLED(organic light emitting diode)는 액정디스플레이를 대체할 차세대 평판디스플레이로 많은 주목을 받고 있다. 현재 많이 사용되고 있는 OLED의 기판재료는 Glass기판이지만 차세대 Flexible한 display에서의 적용을 위해서는 가볍고 유연한 plastic을 기판 재료로 사용 할 것으로 보인다. 하지만 plastic이 기판재료로 된 OLED의 가장 큰 단점중의 하나가 수분과 산소에 민감하여 열화를 초래한다는 것이다. 이런 수분침투와 열화 과정으로 인해 OLED의 발광효과가 약해져 OLED의 수명과 직접적으로 연결된다. 하여 외부에서 OLED내부로 유입되는 산소, 수분으로 부터 발광재료와 전극의 산화를 방지하며 외부의 충격으로부터 소자를 보호하기 위한 봉지기술은 반드시 필요하다. 따라서 본 연구에서는, flexible한 OLED에 적용되는 금속 코팅한 막의 적층구조 및 기판의 노출온도에 따른 금속 코팅막의 수분침투 특성에 대해 MOCON의 weight gain test (WGT)를 통해 barrier layer에 대해 평가하고 이에 대한 mechanism을 확립하는데 그 목적이 있다. 금속을 코팅한 막은 OLED의 cathode와 anode 재료로 많이 사용되는 Al과 ITO를 sputter장비를 이용해 single layer와 double-layer의 두 가지 구조로 PET기판에 증착하였다. 증착한 Al막의 두께는 각각 50 nm, 100 nm, 200 nm, 400 nm 등 4가지로 하였다. double-layer의 경우에는 총 두께를 절반씩 기판의 양쪽에 증착하였다. 적층구조에 따른 수분침투 특성 평가 결과로 보면 같은 두께일 때 double-layer는 single layer에 비해서 모든 시편에서 수분의 투습율이 낮음으로써 더 좋은 수분침투의 barrier 특성을 나타내었다. 특히 100 nm이상인 경우 투습율은 예상한 값보다 50%이상 낮게 나타났다.

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Effect of Inflow Rate of Raw Material Solution on the Fabrication of Nano-Sized Cobalt Oxide Powder by Spray Pyrolysis Process

  • Kim, Dong Hee;Yu, Jae Keun
    • Korean Journal of Materials Research
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    • v.26 no.11
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    • pp.662-669
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    • 2016
  • In order to identify changes in the nature of the particles due to changes in the inflow rate of the raw material solution, the present study was intended to prepare nano-sized cobalt oxide ($Co_3O_4$) powder with an average particle size of 50 nm or less by spray pyrolysis reaction using raw cobalt chloride solution. As the inflow rate of the raw material solution increased, droplets formed by the pyrolysis reaction showed more divided form and the particle size distribution was more uneven. As the inflow rate of the solution increased from 2 to 10 ml/min, the average particle size of the formed particles increased from about 25 nm to 40 nm, while the average particle size did not show significant changes when the inflow rate increased from 10 to 50 ml/min. XRD analysis showed that the intensity of the XRD peaks increased remarkably when the inflow rate of the solution increased from 2 to 10 ml/min. On the other hand, the peak intensity stayed almost constant when the inflow rate increased from 10 to 50 ml/min. With the increase in the inflow rate from 2 to 10 ml/min, the specific surface area of the particles decreased by approximately 20 %. On the contrary, the specific surface area stayed constant when the inflow rate increased from 10 to 50 ml/min.

Influence of gas mixing ratio on Xe spectrum for improving Luminous Efficiency & High Speed discharge images in AC-PDP

  • 안정철
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.233-233
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    • 1999
  • 본 연구에서는 2성분계 gas(Ne+Xe)를 사용하여 기체압력(p), 진동수(f)에 따라 VUV(Vacuum Ultra Violet) spectrum 147, 173nm 파장과 IR(Infrared) spectrum 823nm, 828nm을 Vacuum Monochromator(Acton-VM 507)를 통해 측정하였다. 휘도(Luminance)와 전력(Power)측면에서 Ne+ Xe 최적의 가스 조성비를 찾기 위해서 Xe의 혼합비에 따른 IR영역인 823nm, 828nm을 측정결과, Xe 4%일 때 좋은 효율을 나타냈다. 기체압력이 200Torr에서는 Xe(3P1)에 기인하는 147nm가 주요한 파장이며, 기체압력이 400Torr, 600Torr일때는 Xe(3P2)에 기인하는 173nm 파장이 주요함을 알 수 있었다. 또한 공간 방전 이미지를 전압 pulse 인가후 ICCD Camera(V-Tek)의 Ready time, On Time을 조절하면서 50ns delay로 관측하였다. 향후 실험계획은 실제 상용화되고 있는 혼합가스 He+Ne+Xe의 조성비에 따른 자세한 실험을 할 것이다.

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