• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.2 s.105
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• pp.134-138
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• 2006

The isolation performance of the S-band single-pole single-throw(SPST) monolithic microwave integrated circuit (MMIC) switch with two different RF-interconnection approaches, microstrip and grounded coplanar waveguide(GCPW) lines, are investigated. On-to-off isolation is improved by 5.8 dB with the GCPW design compared with the microstrip design and additional improvement of 6.9 dB is obtained with the coplanar wire-bond interconnection(CWBI) at a 3.4 GHz. The measured insertion loss and third-order inter-modulation distortion(IMD3) are less than 1.94 dB over $3.2{\sim}3.6\;GHz$ and greater than 64 dBc.

• Journal of Advanced Navigation Technology
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• v.15 no.5
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• pp.789-794
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• 2011

This paper has analyzed the AM-AM and AM-PM characteristics of 7.9 GHz~8.4 GHz X-band TWT used for satellite communication and improved its linearity and IMD performance by using linearizer. The TWT amplifier with the linearizer shows better AM-AM and AM-PM conversion, and has increased 1 dB compression point by 12.3 dB and $2.0^{\circ}/dB$ phase distortion point by 10 dB. The 3rd order intermodulation distortion, IMD3 is measured to be 37.0 dBc that is 16.2 dB improvement at the operating output. This paper also proposed the measurement method of IMD for high power amplifier, and that TWT amplifier can have better linearity and output power by compensating for the AM-PM characteristics.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.862-867
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• 2009

This paper presents a study on a rectenna for rectification of incident low power microwave signals with power densities less than 2 mW/$cm^2$ at 2.45 GHz. The proposed rectenna is designed and implemented by a rectifier with voltage doubler structure and a printed Yagi antenna which suppress re-radiation of the second order harmonic of fundamental frequency. The printed Yagi antenna has a gain of about 5 dB, and the measured conversion efficiencies of the rectenna are from 32 % to 42 % when its incident power levels are from 0 dBm to 14 dBm. The developed rectenna is expected to be useful in the power transmission system.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.14 no.1
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• pp.195-201
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• 2014

In this paper, an AccessPoint compact microstrip patch antenna was designed by using L-shaped feeding structure of a Fractal Structure and the compact antenna can be obtained by the rare formed presence of the resonance flow which is called "Crossed-Diagonal". CST's MicroWave5.0 was used for the design. As the operating characteristics of the patch antenna, it showed the characteristic of 1031 [MHz] or 29.4% in the range of 3.202 [GHz] ~ 4.233 [GHz] when an input return loss is less -10 [dB] and VSWR 2:1, also as it is in this paper, we got simulation results such as, gains of the E-plane and H-plane are 8.7 [dBi] and 8.6 [dBi] for this is the single patch, and 3 [dB] beamwidth is $43.9^{\circ}$ at E-plane and $78.7^{\circ}$ at H-plane.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.12
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• pp.1333-1338
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• 2008

In this paper, RF varactor diode are applied to the design of miniaturized and tunable bandstop filter. The proposed bandstop filter is based on a Defected Ground Structure(DGS) section topology. The designed tunable bandstop filter can achieve a significant size reduction by with loading capacitance component of varactor diode. It is observed from the measured results that the proposed tunable bandstop filter shows a wide tuning range of 42.9 % from 1.01 GHz to 1.99 GHz. The rejection level in the stopband is higher as the number of DGS section increases. In case of the proposed tunable bandstop filter with two DGS sections, the rejection level of the filter is better than 20 dB in the stopband during the tuning. In this case, the maximum insertion loss in the lower passband is 0.5 dB.

• Journal of Advanced Navigation Technology
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• v.15 no.4
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• pp.596-601
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• 2011

This paper has presented research results for the switching mode class E frequency multiplier that has simple circuit structure and high efficiency. Frequency multiplication is coming from the nonlinearity of the active component, and this paper models the FET active component as a simple switch and some parasitics to analyze the characteristics. The matching component parameters for the class E frequency doubler have been derived with modeling the FET as a input controlled switch and some parasitics. A circuit simulator, ADS, is used to simulate the output voltage and current waveform and efficiency with the variation of the parasitic values. With 2.9GHz input and 2V bias, the drain efficiency has been decreased from 98% to 28% with changing the parasitic capacitance from 0pF to 1pF at 5.8GHz output, which shows that the parasitic capacitance CP has the most significant effect on the efficiency among the parasitics of FET.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.454-459
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• 2007

In this work, micro-scale, high-performance solenoid-type RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. The size of the chip inductors was $0.86{\times}0.46{\times}0.45mm^3$ and copper(Cu) wire with $27{\mu}m$ diameter was used as the coil. High frequency characteristics of the inductance(L), quality factor(Q), impedance(Z), and equivalent circuit parameters of the RE chip inductors were measured and analyzed using an RF impedance/material analyzer(HP4291B with HP16193A test fixture). It was observed that the RF chip inductors with the number of turns of 9 to 12 have the inductance of 21 to 34nH and exhibit the self-resonant frequency(SRF) of 5.7 to 3.7GHz. The SRF of inductors decreases with increasing the inductance and inductors have the quality factor of 38 to 49 in the frequency range of 900MHz to 1,7GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.10
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• pp.2359-2366
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• 2014

In this paper, the characteristics of a inset fed rectangular microstrip patch antenna for S-band applications is studied. The variations of return loss along inset length and inset width are investigated on the inset fed rectangular microstrip patch antenna. From the investigated results, the optimized inset fed antenna is designed. At the resonant frequency 2.3 GHz, the optimized dimension of the patch is $45.0mm{\times}40.9mm$. The inset length and width are 14 mm and 1 mm, respectively. The designed antenna is fabricated on the substrate which has a dielectric constant and thickness with 2.5 and 0.787 mm. Simulation results are obtained by a 3D EM(Electromagnetic) solver. The resonant frequency and return loss are measured 2.3025 GHz and -21.11 dB, respectively. The measured and simulated results of the fabricated antenna are in good agreement.

• Journal of Korea Multimedia Society
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• v.6 no.2
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• pp.352-359
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• 2003

In this paper, we designed the bluetooth receiver using the microstrip bandpass filter and the high gain low noise amplifier with the 0.2$\mu\textrm{m}$ CMOS technology. A cascode inverter is adopted to implement the low noise amplifier and is one stage amplifier with a voltage reference and without the choke inductor. The designed 2.4GHz LNA was achieved a power gain of 18dB, a noise figure of 2.8dB, and the power consumption of 255mW at 2.5V power supply. Also, the microstrip receiver bandpass filter was designed that the center frequency was 2.45GHz, the bandwidth was 4% and the insert attenuation was -1.9dB. When the microstrip bandpass filter and LNA was simulated together the power gain was 16.3dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.2
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• pp.223-230
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• 2008

This paper deals with the measurements of wireless image signal in subway tunnels at 2.45GHz. Measurements have been conducted in 3 subway stations with different types; a straight tunnel and two curved tunnels. As a analysis result for the measured data, we found that the signal level inside straight tunnel by the strong multipath waves fluctuate deeply compared to the curved tunnel. The path loss exponent for the Shin-hung station with the straight tunnel is 2.5, those for the Pan-am and Dae-dong station with curved tunnels are 1.6 and 1.9, respectively. The fade depth and width at 50% point became relatively serious at Shin-hung station, the level crossing rate inside the Pan-am station is larger than the other stations. Therefore, it can be concluded that the fading phenomena affect to the signal performance generate seriously at straight tunnel compared to the curved tunnel.