• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.539-546
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• 2007

In this paper, a 3-D EM simulation methodology for on-chip spiral inductor analysis has provided and it is shown that the methodology can be adapted to the highly predictable design for CMOS VCO. LC-resonator type VCO have fabricated by using standard 0.25 um CMOS process. And the LC VCO layout case which has pattern ground shielded inductors and the other layout case which has no pattern grounded inductors were fabricated for the verification of their effects on the VCO's phase noise by reducing the Q-factor of inductors. Fabricated VCO has 3.094 GHz, -12.15 dBm output at the tuning voltage of 2.5 V, and from the simulation, Q-factor of the pattern grounded inductor has increased 8% at 3 GHz, and from the measurement results, the phase noise has reduced by 9 dB at the 3 MHz off-set frequency for the pattern grounded inductor layout case.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.12
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• pp.1359-1364
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• 2012

The C-band semi-lumped lowpass filter with broad stopband and compact size characteristic using chip inductor is proposed. To provide an additional attenuation pole in stopband by SRF, a separable inductor is added to proposed structure, and it has broad stopband characteristic. The third order elliptic function lowpass filter with chip inductor(L: 9.1 nH, SRF: 5.5 GHz, Q: 25) has insertion loss of 0.38 dB, cutoff frequency of 920 MHz, broad stopband(below 20 dB) of 1.43~7.8 GHz and the size is reduced 37.4 % compared to distributed inductor.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.9
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• pp.1727-1732
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• 2011

In order to realize a high performance(low loss, high isolation) microwave power divider/combiner, we have designed the power combiner/divider precisely in accordance with the different hight of central part. In the case of the high central part of the hight of $h_r$=10.2, a compensating part of the conical line is inserted in the conical conversion transmission line, and in the case of low central part of the hight of $h_r$=5.0, the conical conversion transmission line is remodeled into the 2-stage bend structure. In both case, the reflection characteristics are improved to 30dB over the operating frequency range of 5GHz bandwidth. A resistance is inserted between the peripheral ports so as to try to improve the isolation characteristics of the device. For the 16-divider/combiner, the isolation characteristics are improved to 10dB over the operating frequency range of 5GHz bandwidth.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.5
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• pp.32-37
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• 1989

The design method of the center-fed resonant type slotted waveguide antenna using the Dolph-Tschebyscheff array is presented. Slot admittances are obtained by empirical and theoretical method since the effect of mutual coupling between slots is included. We design a slotted waveguide antenna which has 1.8ft. length and operates on 9.4GHz. The experimental results of the antenna show that its gain, maximum sidelobe level and half power beam-width are 25.5dB, -22dB and 3.6deg., respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.5
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• pp.525-533
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• 1997

A nondestructive moisture measurement technique has been applied to improve the previous moisture measurement method in the building research. The experiment was done in free space using horns since it is the key element for continuous and non-destructive measurement. For this purpose a microwave bridge type analyzer at the frequency of 9.5 GHz was used to determine the moisture content of sands in the range of 1~12%. From this, the representative calibration curves were obtained. This shows that moisture measurement technique using microwave is applicabe to the measurement of moisture in non-metallic materials such as coal, pulp, foods, building materials, etc.

• Journal of The Korean Astronomical Society
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• v.34 no.3
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• pp.167-179
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• 2001

A molecular line survey towards the UC H II region G34.3+0.15 from 155.3 to 165.3GHz has been conducted with the TRAO 14-m radio telescope. Combined with our previous observations from 84.7 to 115.6GHz and 123.5 to 155.3GHz (Paper I), the spectral coverage of this survey in G34.3+0.15 now runs from 85 to 165 GHz. From these latest observations, a total of 18 lines from 6 species were detected. These include four new lines corresponding to ${\Delta}$J = 0, ${\Delta}$K = 1 transitions of the $CH_3OH$ E-type species, and two new lines corresponding to transitions from $SO_2$ and $HC_3N$. These 6 new lines are $CH_3OH$[1(1) - 1(0)E], $CH_3OH$[2(1) - 2(0)E], $CH_3OH$[3(1) - 3(0)E], $CH_3OH$[4(1) - 4(0)E], $SO_2$[14(1, 13) -14(0, 14)] and $HC_3N$[18 -17]. We applied a rotation diagram analysis to derive rotation temperatures and column densities from the methanol transitions detected, and combined with NRAO 12-m data from Slysh et al. 1999. Applying a two-component fit, we find a cold component with temperature 13-16K and column density $3.3-3.4 {\times} 10^{14} cm^{-2}$, and a hot component with temperature 64 - 83K and column density $9.3{\times}10^{14} - 9.7 {\times} 10^{14} cm^{-2}$. On the other hand, applying just a one-component fit yields temperatures in the 47 -62 K range and column densities from $7.5-1.1 {\times} 10^{15} cm^{-2}$.

• Journal of the Korean Magnetics Society
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• v.6 no.5
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• pp.298-304
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• 1996

We have manufactured FMR spectrometer over wide range(2-35 GHz). In order to test FMR spectrometer, res¬onance absorption has been measured of the standard sample DPPH. The Q vaules of absorption line are 189-1096. As a result, We noticed that FMR spectrometer has been manufactured well. FMR studies of MgFez04 single crystal have been performed at S, J, K-band. The resonance lines have been observed for the each orientation of (100) plane at 300 K. The values of the magnetic anisotropy constant $K_{1}$ and the spectroscopic spli tting g valule have been calculated from the ferromagnetic resonance curve, $-2.9{\times}10^{4}erg/cm^{3}$, 2.02 at 23.89 GHz, $-2.2{\times}10^{4}erg/cm^{3}$, 1.89 at 5.3 GHz and $-2.8{\times}10^{4}erg/cm^{3}$, 2.01 at 3.6 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.108-114
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• 2016

This paper presents a 2.6 GHz Doherty power amplifier IC to enhance the back-off efficiency. In order to apply to small-cell base stations, the Doherty power amplifier was fabricated using GaN-HEMT process for high power density. In addition, the implemented Doherty power amplifier was mounted on a QFN package. The implemented GaN-HEMT Doherty power amplifier was measured using LTE downlink signal with 10 MHz bandwidth and 6.5 dB PAPR for verification. A power gain of 15.8 dB, a drain efficiency of 43.0 %, and an ACLR of -30.0 dBc were obtained at an average output power level of 33.9 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.11
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• pp.1019-1022
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• 2016

In this paper, a 2~16 GHz GaN wideband power amplifier MMIC s designed and fabricated using the nonuniform power amplifier design technique that utilizes drain shunt capacitors to simultaneously provide each transistor with the optimum load impedance and phase balance between input and output transmission lines. The power amplifier MMIC chip that is fabricated using the $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors occupies an area of $3.9mm{\times}3.1mm$ and shows a linear gain of larger than 12 dB and an input return loss of greater than 10 dB. Under a continuous-wave mode, it has a saturated output power of 36.2~38.5 dBm and a power-added efficiency of about 8~16 % in 2 to 16 GHz.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8643-8648
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• 2015

In this paper presents the design and demonstrate 8 W 3-stage HPA(High Power Amplifier) MMIC(Monolithic Microwave Integrated Circuits) for Ka-band down link satellite communications payload system at 19.5 GHz ~ 22 GHz frequency band. The HPA MMIC consist of 3-stage GaN HEMT(Hight Electron Mobility Transistors). The gate periphery of $1^{st}$ stage, $2^{nd}$ stage and output stage is determined $8{\times}50{\times}2$ um, $8{\times}50{\times}4$ um and $8{\times}50{\times}8$ um, respectively. The fabricated HPA MMIC shows size $3,400{\times}3,200um^2$, small signal gain over 29.6 dB, input matching -8.2 dB, output matching -9.7 dB, output power 39.1 dBm and PAE 25.3 % by using 0.15 um GaN technology at 20 V supply voltage in 19.5~22 GHz frequency band. Therefore, this HPA MMIC is believed to be adaptable Ka-band satellite communication payloads down link system.