• Title/Summary/Keyword: 5.9 GHz

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Effect of Plasma Area on Frequency of Monostatic Radar Cross Section Reduction

  • Ha, Jungje;Shin, Woongjae;Lee, Joo Hwan;Kim, Yuna;Kim, Doosoo;Lee, Yongshik;Yook, Jong-Gwan
    • Journal of electromagnetic engineering and science
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    • 제17권3호
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    • pp.153-158
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    • 2017
  • This work reports on the effect of plasma area on the frequency characteristics of the monostatic radar cross section (RCS) of a square metallic plate. A dielectric barrier discharge (DBD) plasma actuator consisting of 10 rings is proposed. The actuator is fabricated in three different configurations such that only three inner rings, seven inner rings, and all rings can be biased. By applying an 18-kV bias at 1 kHz, the three types of DBD actuators generate plasma with a total area of 16.96, 36.74, and $53.69cm^2$, respectively, in a ring or circular form. The experimental results reveal that when the DBD actuator is placed in front of a $20mm{\times}20cm$ conducting plate, the monostatic RCS is reduced by as much as 18.5 dB in the range of 9.41-11.65 GHz. Furthermore, by generating the plasma and changing the area, the frequency of maximum reduction in the monostatic RCS of the plate can be controlled. The frequency is reduced by nearly 20% in the X band when all rings are biased. Finally, an electromagnetic model of the plasma is obtained by comparing the experimental and full-wave simulated results.

Zn2-2xSi1+xO4 세라믹스의 소결 및 마이크로파 유전 특성 (Sintering and Microwave Dielectric Properties of Zn2-2xSi1+xO4 Ceramics)

  • 윤상옥;김윤한;김소정;조소라;김신
    • 한국전기전자재료학회논문지
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    • 제28권7호
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    • pp.428-432
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    • 2015
  • Sintering and microwave dielectric properties of $Zn_{2-2x}Si_{1+x}O_4$ (x=0~0.10) ceramics were investigated. The secondary phase of ZnO was observed in the specimen for x=0 whereas $SiO_2$ was detected in that for x=0.05. The composition of $Zn_2SiO_4$ might be close to x=0.02, i.e., $Zn_{1.96}Si_{1.02}O_4$; the ratio of Zn/Si is 1.922. The insufficient grain growth was observed in the specimen of x=0. For the specimens of $x{\geq}0.05$, the grain growth sufficiently occurred through the liquid phase sintering. The value of quality factor of all specimens was dependent on the x value, i.e., the ratio of Zn/Si, whereas that of dielectric constant was independent. Relative density, dielectric constant, and quality factor ($Q{\times}f$) of the specimen for x=0.05, i.e., $Zn_{1.9}Si_{1.05}O_4$, sintered at $1,400^{\circ}C$ were 96.5%, 6.43, and 115,166 GHz, respectively.

THERMAL AND NON-THERMAL RADIO CONTINUUM SOURCES IN THE W51 COMPLEX

  • MOON DAE-SIK;KOO BON-CHUL
    • 천문학회지
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    • 제27권1호
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    • pp.81-102
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    • 1994
  • We have decomposed the 11-cm radio continuum emission of the W51 complex into thermal and non-thermal components. The distribution of the thermal emission has been determined by analyzing HI, CO, and IRAS $60-{\mu}m$ data. We have found a good correlation between the 11-cm thermal continuum and the 60- 11m emissions, which is used to obtain the thermal and non-thermal 11-cm continuum maps of the W51 complex. Most of the thermal continuum is emanating from the compact H II regions and their low-density ionized envelopes in W51A and W51B. All the H II regions, except G49.1-0.4 in W51B, have associated molecular clumps. The thermal radio continuum fluxes of the compact H II regions are proportional to the CO fluxes of molecular clumps. This is consistent with the previous results that the total mass of stars in an H II region is proportional to the mass of the associated molecular clump. According to our result, there are three non-thermal continuum sources in W51: G49.4-0.4 in W51A, a weak source close to G49.2-0.3 in W51B, and the shell source W51C. The non-thermal flux of G49.5-0.4 at 11-cm is $\~28 Jy$, which is $\~25\%$ of its total 11-cm flux. The radio continuum spectrum between 0.15 and 300 GHz also suggests an excess emission over thermal free-free emission. We show that the excess emission can be described as a non-thermal emission with a spectral index ${\alpha}{\simeq}-1.0 (S_v{\propto}V^a)$ attenuated by thermal free-free absorptions at low-frequencies. The non-thermal source close to G49.2-0.3 is weak $(\~9 Jy)$. The nature of the source is not known and the reality of the non-thermal emission needs to be confirmed. The non~thermal shell source W51C has a 11-cm flux of $\~130Jy$ and a spectral index ${\alpha}{\simeq}-0.26$.

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이동 통신 부품에 이용되는 $BaO-(Nd,Bi)_2 O_3-TiO_2$계 마이크로파 유전체의 유전 특성 (Microwave Dielectric Properties of the $BaO-(Nd,Bi)_2 O_3-TiO_2$$_2$ Ceramic for Mobile Communication Component)

  • 윤중락;이헌용;김경용;이석원
    • 한국전기전자재료학회논문지
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    • 제11권11호
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    • pp.947-953
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    • 1998
  • The microwave dielectric properties of X BaO-0.15($Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2 (X=0.14~0.17) and 0.16BaO-0.15(Bi_xNd_{1-x})_2O_3-0.69TiO_2$ (X=0.12~0.15) ceramics sintered at 1320~$1380^{\circ}C$ were investigated. The microwave dielectric properties of X BaO-0.15(Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2$ (X=0.14~0.17) can be controlled effectively by adjusting X content : with increasing X from 0.14 to 0.17 both dielectric constant and temperature coefficient of resonant frequency decreased from 94.6 to 86 and from 22 ppm/^${\circ}C to -7 ppm/^{\circ}C$, respectively, while quality factor increased from 1300 to 1920 (at 4GHz). The microwave dielectric properties of 0.16BaO-0.15(Bi_x/Nd_{1-x2}O_3 -0.69TiO_2$ (X=0.12~0.15) can be controlled effectively by adjusting X content : with increasing X from 0.12 to 0.15 both quality factor and temperature coefficient of resonant frequency decreased from 1920 to 1430 and from 9 ppm/^${\circ}C to -10 ppm/^{\circ}C$, respectively, while dielectric constant increased from 87.5 to 92.6.

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Attenuation Effects of Plasma on Ka-Band Wave Propagation in Various Gas and Pressure Environments

  • Lee, Joo Hwan;Kim, Joonsuk;Kim, Yuna;Kim, Sangin;Kim, Doo-Soo;Lee, Yongshik;Yook, Jong-Gwan
    • Journal of electromagnetic engineering and science
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    • 제18권1호
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    • pp.63-69
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    • 2018
  • This work demonstrates attenuation effects of plasma on waves propagating in the 26.5-40 GHz range. The effect is investigated via experiments measuring the transmission between two Ka-band horn antennas set 30 cm apart. A dielectric-barrier-discharge (DBD) plasma generator with a size of $200mm{\times}100mm{\times}70mm$ and consisting of 20 layers of electrodes is placed between the two antennas. The DBD generator is placed in a $400mm{\times}300mm{\times}400mm$ acrylic chamber so that the experiments can be performed for plasma generated under various conditions of gas and pressure, for instance, in air, Ar, and He environments at 0.001, 0.05, and 1 atm of pressure. Attenuation is calculated by the difference in the transmission level, with and without plasma, which is generated with a bias voltage of 20 kV in the 0.1-1.4 kHz range. Results show that the attenuation varies from 0.05 dB/m to 9.0 dB/m depending on the environment. Noble gas environments show higher levels of attenuation than air, and He is lossier than Ar. In all gas environments, attenuation increases as pressure increases. Finally, electromagnetic models of plasmas generated in various conditions are provided.

Room-temperature Preparation of Al2O3 Thick Films by Aerosol Deposition Method for Integrated RE Modules

  • Tsurumi, Takaaki;Nam, Song-Min;Mori, Naoko;Kakemoto, Hirofumi;Wada, Satoshi;Akedo, Jun
    • 한국세라믹학회지
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    • 제40권8호
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    • pp.715-719
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    • 2003
  • The Aerosol Deposition (AD) process will be proposed as a new fabrication technology for the integrated RF modules. $\alpha$-A1$_2$O$_3$ thick films were successfully grown on glass and Al substrates at room temperature by the AD process. Relative dielectric permittivity and loss tangent of the $Al_2$O$_3$ thick films on Al showed 9.5 and 0.005, respectively. To form microstrip lines on aerosol-deposited A1903 thick films, copper electroplating and lithography processes were employed, and the square-type cross section with sharp edges could be obtained. Low-pass LC filters with 10 GHz cutoff frequency were simulated by an electromagnetic analysis, exhibiting the validity of the AD process as a fabrication technology f3r integrated RF modules.

OFDM 기반 WAVE 시스템의 시간동기 하드웨어 설계 (Hardware Design for Timing Synchronization of OFDM-Based WAVE Systems)

  • 현트롱안;김진상;조원경
    • 한국통신학회논문지
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    • 제33권4A호
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    • pp.473-478
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    • 2008
  • 5.9 GHz WAVE(Wireless Access for the Vehicular Environment)는 노변-차량, 차량-차량 통신을 통하여 공공안전과 개인통신을 지원하기 위한 중단거리 무선통신 방식이다. WAVE 물리계층의 핵심기술은 시간동기오류에 민감한 OFDM 방식이며 통신링크상의 지연을 최소화하여 고속의 차량통신 환경을 제공하는 것이 매우 중요하다. 본 논문에서는 오류에 강인하고 복잡도가 낮고 지연시간이 적은 WAVE 시스템 응용을 위한 시간동기 알고리즘과 하드웨어 구조를 제안한다. 제안된 알고리즘은 기존의 알고리즘에 비교하여 연산의 복잡도와 지연시간이 감소되며 하드웨어 구조는 파이프라인 구조와 고속 동작에 영향을 줄 수 있는 RAM이 필요하지 않다는 장점이 있다. Matlab과 FPGA를 이용한 하드웨어 구현을 통한 동기화 오차율(SER) 실험결과, 제안된 알고리즘이 고속 이동환경에 대해 강인하고 효율적이라는 확인하였다.

병렬 LDPCA 채널코드 부호화 방법을 사용한 고속 분산비디오부호화 (Fast Distributed Video Coding using Parallel LDPCA Encoding)

  • 박종빈;전병우
    • 방송공학회논문지
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    • 제16권1호
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    • pp.144-154
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    • 2011
  • 본 논문에서는 고속, 저전력 비디오 부호화에 적합한 변환영역 Wyner-Ziv 분산비디오부호화기를 더욱 고속화하기 위한 병렬처리 방법을 제안한다. 기존의 변환영역 Wyner-Ziv 분산비디오부호화 방법은 양자화 된 변환계수를 비트플레인 단위로 분해한 후 비트플레인별로 순차적으로 LDPCA 채널코드로 부호화함에 따라 전체 부호화 연산량에서 LDPCA 부호화가 평균적으로 60% 정도 차지하였고, 이러한 복잡도는 고비트율로 부호화 할수록 더욱 증가하였다. 본 논문에서는 이런 분산비디오부호화 방법의 복잡도 문제를 개선하기 위해 여러 개의 비트플레인들을 하나의 메시지묶음으로 묶어서 한 번의 연산으로 여러 개의 데이터를 동시에 고속 LDPCA 채널코드 부호화하는 병렬화 방법을 제안한다. 이를 통해 기존의 순차적 방법에 비해 저비트율에서는 8배, 고비트율에서는 55배까지 LDPCA 채널코드 부호화 속도를 향상시켰다. 결과적으로 전체 변환영역 Wyner-Ziv 분산비디오부호화에서 LDPCA 채널코드 부호화의 상대적인 복잡도 비율을 평균 9%까지 낮출 수 있었으며, Wyner-Ziv 영상의 부호화 속도도 QCIF 크기 영상을 2.5GHz 속도의 CPU를 가진 PC환경에서 GOP 길이가 64인 경우 초당 700 ~ 2,300장을 부호화 할 수 있음을 확인했다. 제안 방법은 LDPCA를 사용하는 화소영역 Wyner-Ziv 분산비디오부호화에도 적용 가능하여 고속의 부호화가 요구되는 다양한 응용에 활용이 기대된다.

Si-core/SiGe-shell channel nanowire FET for sub-10-nm logic technology in the THz regime

  • Yu, Eunseon;Son, Baegmo;Kam, Byungmin;Joh, Yong Sang;Park, Sangjoon;Lee, Won-Jun;Jung, Jongwan;Cho, Seongjae
    • ETRI Journal
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    • 제41권6호
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    • pp.829-837
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    • 2019
  • The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (Lg) by examining a set of primary DC and AC parameters. The cutoff frequency (fT) and maximum oscillation frequency (fmax) of the proposed device were determined to be 440.0 and 753.9 GHz when Lg is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

적층구조, 프로브 급전방식, 정사각형 링형태 마이크로스트립 안테나 특성에 관한 연구 (Characteristics of Stacked Probe-Fed Sqare-Ring Microstrip Antenna)

  • 이정연;이중근;김성철
    • 한국전자파학회논문지
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    • 제12권1호
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    • pp.143-152
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    • 2001
  • 본 노문에서는 S밴드 (1.5 3.9 GHz)에서 주로 사용되어지는 마이크로스트립 패치 안테나에서 복사특성의 성능저하를 방지함과 동시에 소형화방법이 연구되었다. 연구는 마이크로스트립 단일 패치 안테나에서 패치의 중앙 부분을 제거함으로써 정사각형 링(Square-ring) 형태를 가지는 마이크로스트립 안테나의 형태에 관하여 수치적인 방법으로 수행되었다. 또한 링 구조를 가지는 정사각형 마이크로스트립 안테나를 연구함에 있어서 안테나 임피던스, 공진주파수, 대역폭 등을 제어하기 위한 부수적인 파라미터들이 연구되었다. 단일 정사각형 링 마이크로스트립안테나에 있어서 패치의 중앙부분이 제거됨에 따라 입력 임피던스가 증가되고, 공진주파수와 대역폭이 감소되는 현상이 관찰되었고, 안테나의 Directivity 에는 적게 영향을 미치는 것으로 나타났다. 또한 Moment Method 방식의 Zeland 사이의 IE3D 소프트웨어를 이용하여 안테나와 전송선로간의 임피던스 정합과 대역폭의 증가를 위해 다른 개체의 정사각형의 단일 패치와 링 형태의 패치가 각각 쌓아 올려지는 적층(stacked) 구조 형태로 설계, 최적치를 도출하여 단일 패치의 마이크로스트립 안테나보다 향상된 대역폭과 이득을 얻을 수 있음이 연구되었다. 또한 수치적인 시뮬레이션 결과와 실제의 측정을 수행한 결과를 서로 비교함으로써 잘 일치함을 증명하였다.

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