• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.8 no.3
• /
• pp.81-86
• /
• 2008

The paradigm of information & communication is rapidly changed into ubiquitous environment based electromagnetic wave, and antenna technology in the wireless ubiquitous communication is remarkably developed. Mini chip antenna has its within small card compared to the external AP antenna. Designed and Fabricated WLAN antenna has a broadband characteristics of 2.4~2.5GHz and 4.9~5.85GHz, and can be used triple mode of IEEE 802.11.a,g.b, and it has comparatively a constant performance in the dual frequency band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.10
• /
• pp.876-884
• /
• 2015

In this paper, a switched beamforming antenna system at 28 GHz frequency band is described for $5^{th}$ generation wireless communication. The butler matrix is used as a beamforming system and it produces linear spaced phase difference at four output ports. Array antenna is designed that can be steered in desired 4 different directions 28 GHz frequency band. Operation of designed butler matrix that composed of couplers and feedline is explained. The antenna system is designed in RO3003 substrate that has a height of 5 mil and dielectric constant of 3. The size of butler matrix is $20.3{\times}13.0mm^2$ and size of array antenna is $21.2{\times}19.9mm^2$. This system can be steered from $-34^{\circ}$ to $33^{\circ}$ and minimum sidelobe level is 12.9 dB.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.9
• /
• pp.1633-1640
• /
• 2016

In this paper, we propose a open-ended rectangular microstirp patch antenna with fork-shaped feeding structure. This antenna extends the effective bandwidth by transforming single or multi resonant frequency and is designed planar monopole structure with microstrip line to satisfy the WLAN bands (2.4 - 2.484, 5.15 - 5.35, 5.25-5.825 GHz). The substrate is printed in 0.8 mm thickness on an FR-4 board. A commercial 3D simulation tool was used to analyze surface current and electromagnetic field distribution in order to analyze the operation mode and reconfiguration principle of antenna. According to the lengths of individual patches, simulated reflection loss was compared to obtain optimized values. When it was designed with the optimized values, it satisfied WLAN bands (2.380 - 2.710, 4.900 - 5.950 GHz), if the switch is off, and 2.4 WLAN band (2.380 - 2.710 GHz). From the fabricated and measured results, measured results of return loss, gain and radiation patterns characteristics displayed for operating bands.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.31 no.9A
• /
• pp.900-905
• /
• 2006

In this paper, PIFA antenna for $2.40{\sim}2.482GHz\;and\;5.75{\sim}5.85GHz$ is designed, fabricated, and measured. The prototype consist of hair-pin and short-pin. To obtain suitable bandwidth, the form layer is inserted between ground plane and substrate. Important parameters in the design are hair-pin length, width, position, air-gap height, and feed point position. From these parameters optimized, a PIFA antenna is fabricated and measured. The measured results of the antenna are obtained as follows results. The resonant frequency of the fabrication PIFA antenna is 2.37GHz and 5.86GHz bandwidth for approximately 90MHz with 350MHz(VSWR<2.0) and the gain is $1.91{\sim}4.37dBi$. H-plan and E-plan at 2.4GHz and 5.8GHz are shown as $52.83^{\circ},\;85.90^{\circ}\;and\;68.68^{\circ},\;52.143^{\circ}$ respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.17 no.9 s.112
• /
• pp.874-882
• /
• 2006

We surveyed the international and national spectrum & technical standardization trends of extremely adaptive frequency bands $57\sim64GHz$ that can provide 1 Gbps bit-rate ultra broadband service in above 30 GHz millimeter waves, and analyzed service scenarios and the characteristics of these bands, As a result of these analysises, 1 Gbps ASK channel bandwidth needs 2.5 GHz and total bandwidth calculated 7 GHz for dual FDD. finally, we proposed the nationally suitable allocation plan of millimeter wave bands $57\sim64GHz$.

• Journal of electromagnetic engineering and science
• /
• v.11 no.3
• /
• pp.207-212
• /
• 2011

This paper presents a CPW-fed antenna with three slots. The proposed antenna can operate at 1.9~2.1 GHz and 2.9~3.3 GHz which are generated by the two rectangular slots, and 4.5~11.6 GHz which is generated by the main patch. The semicircle-slot is used as a band-notched filter to stop at a desired band (5.150~5.825 GHz) limited by IEEE 802.11a or HIPERLAN/2 applications. The currents concentrate around corresponding slots at the desired band. The proposed antenna is very small in size, with overall dimensions of $27{\times}32{\times}1\;mm^3$ etched onto an FR4-printed circuit board (PCB).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2002.11a
• /
• pp.148-150
• /
• 2002

In this paper, a 5-coupled BPF with teflon substrate is presented. In general, for less than 1 GHz frequency, the narrow bandwidth as well as the good characteristic in the rejection frequency band could be realized using lumped elements. However, for higher than 1 GHz frequency, the distributed elements such as microstrip lines need to be used for the design of the desired BPF For less than 2 GHz, the FR4 shows good filter characteristic at low cost. However, in the range of 2 GHz ~ 10 GHz, the filters with FR4 show a big difference between simulation and measurement results. Thus, in such a high frequency region, the teflon is more preferred to the FR4. The center frequency (fc) of the proposed filter is 2.3 GHz, the insertin loss (IL) is 1.2 dB, the return loss (RL) is 30 dB, bandwidth (BW) is 100 MHz, and the size is 8.3 cm $\times$ 4.9 cm.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1587_1588
• /
• 2009

In this paper, PCB embedded balanced-to-unbalamced duplexer using coupled LC resonator was introduced for low cost dualband WiMax front-end-module application. In order to obtain the function of bandpass filter and balun transformer, proposed duplexer was configured by using magnetically coupled LC resonator. Out-of-band suppression was enhanced by applying two m-Derived transform circuits to obtain transmission zeros at 2GHz and 4.8GHz. In order to reduce the size of embedded duplexer, BaSrTiO3 (BST) composite high Dk RCC film was applied to improve the capacitance density. This high Dk film provided the capacitance density of 12.2 pF/mm2. The simulation results shows that fabricated duplexer had an insertion loss of 2.9dB and 5.5dB and return loss of 15dB and 16dB for 2.5GHz~2.6GHz and 3.5GHz~3.6GHz, respectively. The maximum magnitude and phase imbalance were 0.01dB and 0.17dB, and 1degree and 2degree in its passband, respectively. The out-of-band suppression was observed approximately 29dB and 40dB below 1.9GHz and over 4.5GHz, respectively. It has a volume of 6 mm $\times$ 7 mm $\times$ 0.7 mm (height).

• Journal of electromagnetic engineering and science
• /
• v.17 no.1
• /
• pp.20-28
• /
• 2017

A fully integrated dual-band CMOS power amplifier (PA) is developed for 802.11n WLAN applications using wafer-level package (WLP) technology. This paper presents a detailed design for the optimal impedance of dual-band PA (2 GHz/5 GHz PA) output transformers with low loss, which is provided by using 2:2 and 2:1 output transformers for the 2 GHz PA and the 5 GHz PA, respectively. In addition, several design issues in the dual-band PA design using WLP technology are addressed, and a design method is proposed. All considerations for the design of dual-band WLP PA are fully reflected in the design procedure. The 2 GHz WLP CMOS PA produces a saturated power of 26.3 dBm with a peak power-added efficiency (PAE) of 32.9%. The 5 GHz WLP CMOS PA produces a saturated power of 24.7 dBm with a PAE of 22.2%. The PA is tested using an 802.11n signal, which satisfies the stringent error vector magnitude (EVM) and mask requirements. It achieved an EVM of -28 dB at an output power of 19.5 dBm with a PAE of 13.1% at 2.45 GHz and an EVM of -28 dB at an output power of 18.1 dBm with a PAE of 8.9% at 5.8 GHz.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.54 no.5
• /
• pp.123-127
• /
• 2017

This paper fabricated and analyzed the image rejection mixer that uses FET's channel resistance. It can be applied for capacity 64QAM that has 50MHz~90MHz of IF band, 8.17GHz of LO frequency and 8.08~8.12GHz of RF band. When IF input power is -20dBm and LO input power is 10dBm, RF output power is obtained -33.2dBm. In this case, conversion loss is 12.9dB, the suppression of 14.3dB for LO frequency and 10.4dB for image frequency. The result of two tone test shows great IMD characteristics with 51.7dBc.