• Title/Summary/Keyword: 5.8 GHz

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High-performance 94 GHz Single Balanced Mixer Based On 70 nm MHEMT And DAML Technology (70 nm MHEMT와 DAML 기술을 이용한 우수한 성능의 94 GHz 단일 평형 혼합기)

  • Kim Sung-Chan;An Dan;Lim Byeong-Ok;Beak Tae-Jong;Shin Dong-Hoon;Rhee Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.4 s.346
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    • pp.8-15
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    • 2006
  • In this paper, the 94 GHz, low conversion loss, and high isolation single balanced mixer is designed and fabricated using GaAs-based metamorphic high electron mobility transistors (MHEMTs) with 70 nm gate length and the hybrid ring coupler with the micromachined transmission lines, dielectric-supported air-gapped microstrip lines (DAMLs). The 70 nm MHEMT devices exhibit DC characteristics with a drain current density of 607 mA/mm an extrinsic transconductance of 1015 mS/mm. The current gain cutoff frequency ($f_T$) and maximum oscillation frequency ($f_{max}$) are 320 GHz and 430 GHz, respectively. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of $3.57{\pm}0.22dB$ and the transmission loss of $3.80{\pm}0.08dB$ in the measured frequency range of 85 GHz to 105 GHz. This mixer shows that the conversion loss and isolation characteristics are $2.5dB{\sim}>2.8dB$ and under -30 dB, respectively, in the range of $93.65GHz{\sim}94.25GHz$. At the center frequency of 94 GHz, this mixer shows the minimum conversion loss of 2.5 dB at a LO power of 6 dBm To our knowledge, these results are the best performances demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

A Studyon Microwave Ampilifer using GaAs MESFET (GaAs MESFET를 이용한 초고주파 증폭기에 관한 연구)

  • 박한규
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.13 no.5
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    • pp.1-8
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    • 1976
  • Microwave GaAs Metal Semiconductor Field effect Transistors (MESFET) with the gate-length of two micrometers are investigated. The scattering parameters of the transistors have been measured from 1GHz to 2GHz by Hp8545 Automatic network analyzer. From the measured data, an equivalent circuit is established which consists of an ntrinsic and. extrinsic transistor elements. In this paper, GaAb MESFET Amplifier is used in conjunction with conventional microstrip techniques to match into a 50 ohms high input/output impedances system. We found that Power gain is less than 8dB and VSWR is less than 1.5 in L-Band.

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Analysis of Radio Spectrum Policy for the Fifth Generation Mobile Communications (5G 이동통신을 위한 전파정책 분석)

  • Kim, Chang-Joo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.8
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    • pp.679-689
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    • 2015
  • The 5G mobile communication technologies have been extensively developed with the era of mobile broadband, but spectrum policy for this service has not yet set up. In this paper, We have investigated the 5G mobile service and analyzed the 5G spectrum policy taking the developing technologies into account. Based on the results of these analyses, We propose an expansion of spectrum sharing in the 3~5 GHz bands, spectrum harmonization of 5 GHz bands, and restructuring of spectrum management administration from currently three distributed management to centralized spectrum management structure.

Design of CFD Structured Microstrip Line Bandpass Filter (CFD 구조의 마이크로스트립 라인 가변 대역통과필터 설계)

  • Yoon, Giwan;Chai, Dongkyu;Linh, Mai;Yim, Munhyuk
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.6 no.8
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    • pp.1292-1296
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    • 2002
  • In this paper, a 3-coupled microstrip line tunable bandpass filter has been designed on the basis of a tonductoriFerroelectricfDielectric (CFD) structure. This tunable filter basically exploits the fact that the increase in the bias voltage leads to the reduction of the effective dielectric constant (eon). This reduced $\varepsilon$eff shifts the center frequency (fc) to the higher value. The characteristics of designed filter are as follows; Return loss (RL) is larger than 10 dB; Insertion loss (IL) is les.i than 3.5 dB: 3-dB bandwidth (BW) is less than 1.18 GHz fc can be tuned from 25.4 GHz to 28.8 GHz over the variation of $\varepsilon$eff, from 10 to 13. Therefore, the tunability comes up to 3.4 GHz. The dimension of the filter designed is 7.0 mm ${\times}$ 5.0 nm ${\times}$ 0.5 mm.

An UWB Design of Plane Bow-Tie Monopole Antenna (평면형 보우타이 모노폴 안테나의 초광대역 설계)

  • Kim, Tae-Woo;Choi, Kyoung;Hwang, Hee-Yong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.12
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    • pp.1212-1218
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    • 2014
  • This paper proposes a planar bow-tie UWB antenna by modifying the ground patch of a reference bowtie-monopole antenna satisfying low band of UWB. The proposed antenna was implemented with five-angled ground patch to be operated in whole UWB band, while the reference antenna had a ground patch of half circle type. The measured return loss satisfies less than -10 dB in 3.1~10.6 GHz, except 4.9~5.8 GHz rejection band. The measured radiation pattern is almost the same with that of the monopole antenna. The radiation gain reduction is about 8 dB at rejection band.

Development of Quad-Band Printed Monopole Antenna Using Coupling Effect of Dual Rectangular Rings and L-Slots on the GND (이중 사각 링 패치 결합효과와 접지면 L-슬롯을 이용한 4중 대역 인쇄형 모노폴 안테나 개발)

  • Shin, Yong-Jin;Lee, Seungwoo;Kim, Nam
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.10
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    • pp.1040-1049
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    • 2014
  • In this paper, a quad-band antenna for DCS1800, PCS1900, WCDMA, WLAN and Mobile WiMAX application is proposed. The proposed antenna is a printed monopole structure, and consists of two rectangular ring-shaped radiating patches on the front side and two different size of L-shaped slots on the back side(ground plane). Two rectangular ring radiation patches are respectively resonant at 2 GHz and 3.5 GHz bands, and additional resonance is occurred at 5.3 GHz by the coupling effect between two ring patches. In addition, the optimized matching characteristic is obtained by controlling the gaps. Also, by adding two L-slots on the ground plane, additional resonant frequency band of 5.6 GHz is occurred. Finally the measured bandwidths of the proposed antenna below -10 dB return loss are 1,200 MHz(1.6~2.8 GHz), 800 MHz(3.2~4.0 GHz), 300 MHz(5.14~5.44 GHz), and 690 MHz(5.56~6.25 GHz). The radiation patterns have the omni-directional characteristic, and the measured antenna average gains at resonant bands are 0.86~4.07 dBi.

Design and Fabrication of a HBT Power Amplifier for Quasi Millimeter-wave Broadband Wireless Local Loop Applications (준밀리미터파 BWLL용 HBT 전력증폭기 설계 및 제작)

  • 김창우;채규성
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.27 no.3C
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    • pp.234-240
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    • 2002
  • A power amplifier with AlGaAs/InGaAs/GaAs HBT's has been developed for customer premise equipments of the quasi millimeter-wave frequency-band broadband wireless local loop(BWLL) system. Parameters of the linear and nonlinear equivalent circuits for a common base HBT have been extracted by a fitting method. The amplifier has been designed through the linear and nonlinear circuit simulations and fabricated on a ceramic substrate for a hybrid IC. The amplifier has produced a 25.5-dBm output power with 35% power-added efficiency(PAE) at 24.4 GHz and achieved a 7.5-dB linear power gain at 24.8 GHz. In 24.25 ∼24.75 GHz band, the amplifier has exhibited a saturated output over larger than 22 dBm and PAE higher than 25%.

A 24-GHz Wide-IF Down-Conversion Mixer Based on 0.13-μm RFCMOS Technology (0.13-μm RFCMOS 공정 기반 24-GHz 광대역 하향 변환 혼합기)

  • Kim, Dong-Hyun;Rieh, Jae-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.11
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    • pp.1235-1239
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    • 2010
  • In this work, a wideband technique has been proposed that improves the IF bandwidth of mixers and a 24-GHz down-conversion mixer employing the proposed technique has been designed and fabricated based on 0.13-${\mu}m$ RFCMOS technology. The mixer showed the conversion gain of $2.7{\pm}1.5$ dB from DC to 5.25 GHz IF for a fixed LO frequency of 24 GHz. Measured P-1dB and LO-RF isolation was -8.7 dBm and 21 dB, respectively. The mixer draws DC current of 10.6 mA from 1.3 V supply.

Uniform Slot Width Bow-tie-shaped Meander Slot Antenna for 5 GHz Application (균일한 슬롯 폭을 갖는 5 GHz 대역 보우타이 형태의 미앤더 슬롯 안테나)

  • 위상혁;김정민;유태훈;육종관;박한규
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.8
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    • pp.769-776
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    • 2002
  • In this paper, we propose uniform slot width bow-tie-shaped meander slot antenna for 5 GHz application. The conventional bow-tie slot antenna has broadband characteristic, however, its size is large. Meanwhile, the meander slot antenna has small size, but it has quite narrow bandwidth. The proposed antenna geometry is a variation of the meander slot antenna incorporating bow-tie shape to realize miniaturized antenna having relatively large bandwidth. Simulated results show that with the same slot width and total slot length, the bandwidth of the proposed antenna is 3 times wider than that of meander slot antenna, and its resonant frequency is 3.01 GHz lower than that of the equal size(H x V) bow-tie slot antenna, and measured results show that the bandwidth of proposed antenna is 218 MHz(5.142 GHz ~ 5.360 GHz) which satisfy the required bandwidth from 5.15 GHz to 5.35 GHz.

A Dual-band Compact Folded Patch Antenna with Improved Isolation Characteristics (격리도 특성이 개선된 이중 대역 소형 평면 패치 안테나)

  • 김태영;정종호;박동국;박익모
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2002.11a
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    • pp.219-222
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    • 2002
  • 본 논문에서는 이중 대역 소형 평면 패치 안테나를 이용하여 5.6GHz 대역과 5.8GHz 대역에서 동작하는 이중 대역 안테나를 제안하였다. 안테나의 격리도 특성을 최소화하기 위해 서로 다른 급전선 구조를 이용하였고, 급전부에 개방스터브를 사용하여 VSWR $\leq$2를 기준으로 5.48 GHz 대역과 5.87 GHz대역에서 각각 3.1%와 2.73% 이상의 대역폭을 얻었으며, 격리도 특성은 두 대역에서 평균적으로 -27㏈를 얻었다

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