• ETRI Journal
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• 제38권5호
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• pp.981-987
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• 2016

We present a cost-effective dual polarization quadrature phase-shift coherent receiver module using a silica planar lightwave circuit (PLC) hybrid assembly. Two polarization beam splitters and two $90^{\circ}$ optical hybrids are monolithically integrated in one silica PLC chip with an index contrast of $2%-{\Delta}$. Two four-channel spot-size converter integrated waveguide-photodetector (PD) arrays are bonded on PD carriers for transverse-electric/transverse-magnetic polarization, and butt-coupled to a polished facet of the PLC using a simple chip-to-chip bonding method. Instead of a ceramic sub-mount, a low-cost printed circuit board is applied in the module. A stepped CuW block is used to dissipate the heat generated from trans-impedance amplifiers and to vertically align RF transmission lines. The fabricated coherent receiver shows a 3-dB bandwidth of 26 GHz and a common mode rejection ratio of 16 dB at 22 GHz for a local oscillator optical input. A bit error rate of $8.3{\times}10^{-11}$ is achieved at a 112-Gbps back-to-back transmission with off-line digital signal processing.

• Transactions on Electrical and Electronic Materials
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• 제7권4호
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• pp.196-203
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• 2006

An air-gap type FBAR was designed using Leach equivalent model for analyzing a vertical structure of the FBAR. For the top electrode, Pt, and the bottom electrode, Au, of $1.2{\mu}m$ thickness and the piezoelectric of 0.8,urn thickness, the resonance and anti-resonance occurred at 2.401 GHz and 2.460 GHz, respectively. $S_{11}$ was increased and $S_{21}$ was decreased as the resonance area of FBAR was widened. We observed the characteristics of insertion loss, bandwidth and out-of-band rejection of ladder-type FBAR BPF by changing resonance areas of series and shunt resonators and by adding stages. As the resonance area of series resonator was increased, insertion loss was improved but out-of-band rejection was degraded. And as the resonance area of shunt resonator was increased, insertion loss was degraded a little but out-of-band rejection was improved even without adding stages. We, also, changed the shape of the resonance area from square shape to rectangle shape to examine the effects of the resonator shape on the characteristics of the BPF. The best performances were observed when the sizes of series and shunt resonator are $150{\mu}m{\times}l50{\mu}m\;and\;5{\mu}m{\times}50{\mu}m$, respectively. Out-of-band rejection was improved about 10dB and bandwidth was broadened from 30MHz to 100MHz utilizing inductor tuning on $2{\times}2\;and\; 4{\times}2$ ladder-type BPFs.

• 한국산학기술학회논문지
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• 제8권5호
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• pp.1026-1033
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• 2007

본 논문에서는 비가역소자를 구조 시뮬레이터를 이용하여 설계하고 제작하여 특성을 비교하고, PIMD 특성에 영향을 미치는 조건을 확보하여 조건의 변화에 따른 PIMD 특성의 변화 값을 확인하였다. 중심주파수가 2.6GHz에 대하여 설계하여 그에 따른 특성을 살펴본 결과 중심주파수 2,650MHz, 밴드 폭 100MHz를 가지며 아이솔레이션 20dB 이상, 반사손실은 20dB이상, 삽입손실이 0.2dB 이하 값을 나타내었다. 비가역소자의 IMD는 되도록 동질의 물질을 사용하고, 내부 구성품 간 유격이 없을 때 우수한 값을 보였으며, 압력이 놓아질수록 좋아지는 경향을 보였으나, 일정 압력 이상의 가할 경우 내부의 자석이나 페라이트의 파손 등을 가져와 주파수 특성의 저하와 함께 IMD 특성이 급격이 증가하였다.

• 한국세라믹학회지
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• 제33권1호
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• pp.1-6
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• 1996

A single phase Ba2(Ti8,472Zr0.528)O20 was prepared by the oxalate method from aqueous solution of BaCl2 TiCl4 and ZrOCl2. The structure ananlysis has been carried out by Rietveld analysis method at room temperature. Powder X-ray data of Ba2(Ti8,472Zr0.528)O20 was indexed with the triclinic lattice(a=7.4587 $\AA$ b=14.0672 $\AA$, c=13.3327 $\AA$, $\alpha$=89.87, $\beta$=79.45 ${\gamma}$=84.46) The R (Residual) values of structure refinement were in a range between 10.00 and 8.00 This analysis proved that the added Zr occupied Ti sites in th structure of Ba2Ti9O20. Ba2(Ti8,472Zr0.528)O20 has excellent dielectric properties(dielectric constant K=40.49 at 5.42 GHz Q=4621) so that it can be used as good microwave dielectric materials.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.641-644
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• 2009

We have studied on the microwave characteristics for the meander type inductors on the MgO substrates and $Al_2O_3$ substrates by employing 3-D high frequency simulation, respectively. Proper designs of meander type inductors were proposed and confirmed through the high frequency simulations, 5, 7, 9, 11, and 13 turns meander type inductors have been choose to analyze the electrical properties for the microwave passive component applications. The Al top electrodes have 282 nm length, 45 nm width, 100 nm thickness and 15 nm gap. The simulations were carried out from 50 MHz to 30 GHz, Frequency dependent inductances and quality factor were calculated by employing the equivalent circuit model of meander type inductors. The self resonances frequency of meander type inductor were shifted from high frequency to low frequency range as the number of the turn of inductors was increased. From the microwave simulations, the inductances and quality factors of meander type inductors were extracted through the scattering parameter.

• 전자공학회논문지C
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• 제36C권11호
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• pp.18-28
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• 1999

RFIC 설계를 위한 새로운 패키지(SOP, Small Outline Package) 등가 회로 모델을 제시한다. RF 영역의 패키지에서 패들(paddle)은 이상적인 그라운드(ground)로 동작하지 못하며 패들과 MMIC 다이(die) 사이의 커플링(coupling) 문제 및 손실에 의한 기생 효과로 인해 MMIC 회로에 심각한 영향을 준다. 패키지의 전기적 효과에 대한 새로운 등가 회로 모델과 파라미터(parameter) 추출 방법을 SOP 패키지를 예로 들어 제시한다. 제시한 모델의 정확성은 상용 full-wave solver와 제시한 모델을 HSPICE 시뮬레이션하여 구한 5-파라미터를 상호 비교함으로써 모델의 정확성을 평가하고 모델이 약 8㎓까지 full-wave 해석 결과와 일치함을 보인다.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2001년도 종합학술발표회 논문집 Vol.11 No.1
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• pp.213-217
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• 2001

본 논문에서는 CPW 구조를 이용하여 60 GHz 무선 시스템 응용을 위한 V-band용 하향 주파수 혼합기를 설계 및 제작하였다. 하향 주파수 혼합기의 설계 및 제작에 있어서 GaAs PHEMT(Pseudomorphic high electron mobility transistor)를 기반으로 하였으며, 회로설계를 위해 coplanar waveguide(CPW) 라이브러리를 구축하여 이용하였다. 제작된 하향 주파수 혼합기의 변환이득은 국부발진주파수(LO) 입력이 8 dBm일 때 -8.5 dB의 최대 변환이득 특성을 얻었으며 Pl dB는 -3.3 dBm을 얻었다. 제작된 회로의 칩 크기는 1.6$\times$l.6 $\textrm{mm}^2$ 이다.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.159-163
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• 2005

This paper gives characterization of ZnO thin film deposited by RF magnetron sputtering method, which is concerned in deposition process and device fabrication process, to fabricate solidly mounted resonator(SMR)-type film bulk acoustic resonator(FBAR). A piezoelectric layer of 1.1${\mu}{\textrm}{m}$ thick ZnO thin films were grown on thermally oxidized SiO$_2$(3000 $\AA$)/Si substrate layers by RF magnetron sputtering at the room temperature. The highly c-axis oriented ZnO thin film was obtained at the conditions of 265 W of RF power, 10 mtorr of working pressure, and 50/50 of Ar/O$_2$ gas ratio. The piezoelectric-active area was 50 ${\mu}{\textrm}{m}$${\times}$50${\mu}{\textrm}{m}$, and the thickness of ZnO film and Al-3 % Cu electrode were 1.4 ${\mu}{\textrm}{m}$ and 180${\mu}{\textrm}{m}$, respectively. Its series and parallel frequencies appeared at 2.128 and 2.151 GHz, respectively, and the qualify factor of the resonator was as high as 401.8$\pm$8.5.

• 천문학논총
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• 제30권2호
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• pp.115-118
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• 2015

We made phase-referencing Very Long Baseline Interferometry (VLBI) observations of Galactic 22 GHz $H_2O$ maser sources with VLBI Exploration of Radio Astrometry (VERA). We measured the parallax distances of G48.61+0.02, G48.99-0.30, G49.19-0.34, ON1, IRAS 20056+3350, IRAS 20143+3634, ON2N, and IRAS 20126+4104, which are located near the tangent point and the Solar circle. The angular velocity of the Galactic rotation at the LSR (i.e. the ratio of the Galactic constants) is derived using the measured parallax distances and proper motions of these sources. The derived value of ${\Omega}_0=28.8{\pm}1.7km\;s^{-1}kpc^{-1}$ is consistent with recent values obtained using VLBI astrometry but 10% larger than the International Astronomical Union (IAU) recommended value of $25.9km\;s^{-1}kpc^{-1}=(220km\;s^{-1})$ / (8.5 kpc).

• 한국전자파학회논문지
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• 제21권7호
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• pp.823-830
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• 2010

본 논문에서는 혼 안테나를 위한 원형 편파가 발생 가능한 동축-도파관 변환 구조를 제안한다. 제안된 장치는 동축 선로에서 원형 도파관으로 모드를 변환하기 위한 변환 구조와 원형 도파관에서 원형 편파를 발생시키기 위한 편파기 기능을 동시에 가진다. 제안된 구조는 동축 선로에서 원형 도파관으로 $TE_{11}$ 모드의 신호를 전달하기 위한 수직 동축 내심과 백숏 사이에 수직 전계를 수평 전계로 바꾸는 편파 비틈 구조를 두어 원형 편파를 발생시킨다. 이러한 장치는 원형 편파 혼 안테나 이전에 위치해 시스템을 단순화 시킬 수 있는 장점을 가진다. 제안된 원형 편파 발생이 가능한 동축-도파관 변환 구조는 X-대역($8.0{\sim}8.5$ GHz)에서 동작하게 설계하였다.