• Title/Summary/Keyword: 5.25-GHz

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Microwave dielectric properties of the $0.97MgTiO_3-0.03SrTiO_3$ ceramics with $B_2O_3$ ($B_2O_3$첨가에 따른 $0.97MgTiO_3-0.03SrTiO_3$ 세라믹스의 마이크로파 유전특성)

  • Nam, Gyu-Bin;Kim, Ji-Heon;Lee, Moon-Ki;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2002.11a
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    • pp.94-96
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    • 2002
  • The $0.97MgTiO_3-0.03SrTiO_3$ ceramics with $B_2O_3$(10wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD and SEM. According to the X-ray diffraction patterns of the $0.97MgTiO_3-0.03SrTiO_3$ ceramics with $B_2O_3$(10wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase $MgTi_2O_5$ were appeared. Increasing the sintering temperature. the grain size was increased. In the case of $0.97MgTiO_3-0.03SrTiO_3$ ceramics with $B_2O_3$(10wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency were $13.52{\sim}18.13,\;32750{\sim}51736GHz$, $-15.78{\sim}25.64ppm/^{\circ}C$, respectively.

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A 12.5-Gb/s Low Power Receiver with Equalizer Adaptation (이퀄라이저 적응기를 포함한 12.5-Gb/s 저전력 수신단 설계)

  • Kang, Jung-Myung;Jung, Woo-Chul;Kwon, Kee-Won;Chun, Jung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.12
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    • pp.71-79
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    • 2013
  • This paper describes a 12.5 Gb/s low-power receiver design with equalizer adaptation. The receiver adapts to channel and chip process variation by adaptation circuit using sampler and serializer. The adaptation principle is explained. It describes technique receiving ground referenced differential signal of voltage-mode transmitter for low-power. The CTLE(Continuous Time Linear Equalizer) having 17.6 dB peaking gain to remove long tail ISI caused channel with -21 dB attenuation. The voltage margin is 210 mV and the timing margin is 0.75 UI in eye diagram. The receiver consumes 0.87 mW/Gb/s low power in 45 nm CMOS technology.

Microwave Dielectric Properties and Multilayer Characteristics of (1-x)BiNbO4-xCaNb2O6 Ceramics ((1-x)BiNbO4-xCaNb2O6 세라믹스의 마이크파 유전특성 및 적층체 특성)

  • Kim, Eung-Soo;Choi, Woong;Kim, Jong-Dae;Kang, Seung-Gu;Shim, Kwang-Bo
    • Journal of the Korean Ceramic Society
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    • v.39 no.12
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    • pp.1190-1196
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    • 2002
  • Microwave dielectric properties and multilayer characteristics $(1-x)BiNbO_4-xCaNb_2O_6$ (0${\le}$x${\le}$1.0) ceramics were investigated as a function of $CaNb_2O_6$ content. In the composition range of 0.25${\le}$x${\le}$0.75, the mixture phases of $BiNbO_4$ with stibotantalate structure and $CaNb_2O_6$ with columbite structure were detected and secondary phase or phase transition were not detected. Dielectric constant (K) of $(1-x)BiNbO_4-xCaNb_2O_6$ ceramics was largely dependent on the existing phase and could be estimated by the dielectric mixing rule calculated from maxwell equation. Typically, dielectric constant (K) of 26, quality factor (Qf) of 4300 GHz and Temperature Coefficient of resonant Frequency (TCF) of -18 ppm/${\circ}C$ were obtained for $0.5BiNbO_4-0.5CaNb_2O_6$ specimens with 0.8 wt% $CuV_2O_6$ sintered at 1000${\circ}C$ for 3h. The deviation of X-Y shrinkage and camber value of the multilayers obtained from $0.5BiNbO_4-0.5CaNb_2O_6$ green sheet sintered at 850∼950${\circ}C$ for 20 min. were smaller than those of $BiNbO_4$ multilayers.

A DC Reference Fluctuation Reduction Circuit for High-Speed CMOS A/D Converter (고속 CMOS A/D 변환기를 위한 기준전압 흔들림 감쇄 회로)

  • Park Sang-Kyu;Hwang Sang-Hoon;Song Min-Kyu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.6 s.348
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    • pp.53-61
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    • 2006
  • In high speed flash type or pipelining type A/D Converter, the faster sampling frequency is, the more the effect of DC reference fluctuation is increased by clock feed-through and kick-back. When we measure A/D Converter, further, external noise increases reference voltage fluctuation. Thus reference fluctuation reduction circuit must be needed in high speed A/D converter. Conventional circuit simply uses capacitor but layout area is large and it's not efficient. In this paper, a reference fluctuation reduction circuit using transmission gate is proposed. In order to verify the proposed technique, we designed and manufactured 6bit 2GSPS CMOS A/D converter. The A/D converter is based on 0.18um 1-poly 5-metal N-well CMOS technology, and it consumes 145mW at 1.8V power supply. It occupies chip area of $977um\times1040um$. Experimental result shows that SNDR is 36.25 dB and INL/DNL ${\pm}0.5LSB$ when sampling frequency is 2GHz.

Fabrication and optical characteristics of 50 ㎓ narrow band pass filter for fiber optical communication using dual ion beam sputtering technique (이중 이온빔 스퍼터링 방식을 사용한 채널 간격 50 ㎓ 광통신용 협대역 투과 필터의 제작 및 특성)

  • 김회경;김명진
    • Korean Journal of Optics and Photonics
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    • v.14 no.3
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    • pp.331-337
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    • 2003
  • This paper represents 50 ㎓ narrow band pass filters for fiber optical communication fabricated by dual ion beam sputtering method. We have analyzed the characteristics of the TA$_2$ $O_{5}$ and $SiO_2$ single layers in order to optimize the process conditions for the 50 ㎓ narrow band pass filters, and controlled the film thickness uniformity to less than 0.1 nm deviation by dual peak spike filter pre-deposition. We designed and fabricated 50 ㎓ narrow band pass filters that consist of 216 layers including 4 cavities based on quarter wave optical thickness. Class substrates with high thermal expansion coefficients were used to reduce the film stress. Anti-reflection coating at the rear side of the substrate was also needed to reduce the optical thickness errors of the Optical Monitoring System caused by multiple beam interference between the front side and the rear side of substrate. The optical characteristics of this 50 ㎓ narrow band pass filters are insertion loss of 0.40 ㏈, pass band ripple of 0.20 ㏈, and pass bandwidth at -0.5 ㏈ of 0.20 nm. and isolation bandwidth at -25 ㏈ of 0.6 nm, which satisfy specifications of dense WDM system in fiber optical communications.tions.

Relationships between dielectric properties and characteristics of impregnated and activated samples of potassium carbonate-and sodium hydroxide-modified palm kernel shell for microwave- assisted activation

  • Alias, Norulaina;Zaini, Muhammad Abbas Ahmad;Kamaruddin, Mohd Johari
    • Carbon letters
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    • v.24
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    • pp.62-72
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    • 2017
  • The aim of this work was to evaluate the dielectric properties of impregnated and activated palm kernel shells (PKSs) samples using two activating agents, potassium carbonate ($K_2CO_3$) and sodium hydroxide (NaOH), at three impregnation ratios. The materials were characterized by moisture content, carbon content, ash content, thermal profile and functional groups. The dielectric properties were examined using an open-ended coaxial probe method at various microwave frequencies (1-6 GHz) and temperatures (25, 35, and $45^{\circ}C$). The results show that the dielectric properties varied with frequency, temperature, moisture content, carbon content and mass ratio of the ionic solids. PKSK1.75 (PKS impregnated with $K_2CO_3$ at a mass ratio of 1.75) and PKSN1.5 (PKS impregnated with NaOH at a mass ratio of 1.5) exhibited a high loss tangent ($tan{\delta}$) indicating the effectiveness of these materials to be heated by microwaves. $K_2CO_3$ and NaOH can act as a microwave absorber to enhance the efficiency of microwave heating for low loss PKSs. Materials with a high moisture content exhibit a high loss tangent but low penetration depth. The interplay of multiple operating frequencies is suggested to promote better microwave heating by considering the changes in the materials characteristics.

Implementation of Small Size Dual Band PAM using LTCC Substrates (LTCC를 이용한 Small Size Dual Band PAM의 구현)

  • Shin, Yong-Kil;Chung, Hyun-Chul;Lee, Joon-Geun;Kim, Dong-Su;Yoo, Jo-Shua;Yoo, Myong-Jae;Park, Seong-Dae;Lee, Woo-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.357-358
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    • 2005
  • Compact power amplifier modules (PAM) for WCDMA/KPCS and GSM/WCDMA dual-band applications based on multilayer low temperature co-fired ceramic (LTCC) substrates are presented in this paper. The proposed modules are composed of an InGaP/GaAs HBT PAs on top of the LTCC substrates and passive components such as RF chokes and capacitors which are embedded in the substrates. The overall size of the modules is less than 6mm $\times$ 6mm $\times$ 0.8mm. The measured result shows that the PAM delivers a power of 28 dBm with a power added efficiency (PAE) of more than 30 % at KPCS band. The adjacent-channel power ratio (ACPR) at 1.25-MHz and 2.25-MHz offset is -44dBc/30kHz and -60dBc/30kHz, respectively, at 28-dBm output power. Also, the PAM for WCDMA band exhibits an output power of 27 dBm and 32-dB gain at 1.95 GHz with a 3.4-V supply. The adjacent-channel leakage ratio (ACLR) at 5-MHz and 10-MHz offset is -37.5dBc/3.84MHz and -48dBc/3.84MHz, respectively. The measured result of the GSM PAM shows an output power of 33.4 dBm and a power gain of 30.4 dB at 900MHz with a 3.5V supply. The corresponding power added efficiency (PAE) is more than 52.6 %.

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Differentiation of expression on 5-day workweek concerned advertising -focused on lifestyle and cognitive inconsistency perspective (주5일 근무제 관련광고의 표현차별화 방식-라이프 스타일 및 인지 불균형의 관점에서)

  • 이현우
    • Archives of design research
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    • v.17 no.1
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    • pp.25-36
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    • 2004
  • The purpose of this study is to analyse and interpret the way of differentiated expression and changing creative trend following 5-day workweek which has been recently adopted. For this aim 11 pieces of distinctive advertising text were analysed. The criteria for selection of analysing text were relativeness with 5-day workweek and cognitive inconsistency. These texts were negative phrases, exaggerated expression, and excessively humorous appeals. The study revealed the followings: First, 5-day workweek concerned advertising texts were considered as high attention getting and successful in stimulating advertising audiences' curiosity by using the elements opposing the value and belief system formed in the existing audience. Second, consumption-driving lifestyle was found in most expressions for credit cards advertising. Third, hedonic need-oriented lifestyle was typical in young consumer products category. Fourth, family centered lifestyle emphasized meaning of rest and solidarity of family.

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Design of an 1.8V 6-bit 2GSPS CMOS ADC with an One-Zero Detecting Encoder and Buffered Reference (One-Zero 감지기와 버퍼드 기준 저항열을 가진 1.8V 6-bit 2GSPS CMOS ADC 설계)

  • Park Yu Jin;Hwang Sang Hoon;Song Min Kyu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.6 s.336
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    • pp.1-8
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    • 2005
  • In this paper, CMOS A/D converter with 6bit 2GSPS Nyquist input at 1.8V is designed. In order to obtain the resolution of 6bit and the character of high-speed operation, we present an Interpolation type architecture. In order to overcome the problems of high speed operation, a novel One-zero Detecting Encoder, a circuit to reduce the Reference Fluctuation, an Averaging Resistor and a Track & Hold, a novel Buffered Reference for the improved SNR are proposed. The proposed ADC is based on 0.18um 1-poly 3-metal N-well CMOS technology, and it consumes 145mW at 1.8V power supply and occupies chip area of 977um $\times$ 1040um. Experimental result show that SNDR is 36.25 dB when sampling frequency is 2GHz and INL/DNL is $\pm$0.5LSB at static performance.

THERMAL AND NON-THERMAL RADIO CONTINUUM SOURCES IN THE W51 COMPLEX

  • MOON DAE-SIK;KOO BON-CHUL
    • Journal of The Korean Astronomical Society
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    • v.27 no.1
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    • pp.81-102
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    • 1994
  • We have decomposed the 11-cm radio continuum emission of the W51 complex into thermal and non-thermal components. The distribution of the thermal emission has been determined by analyzing HI, CO, and IRAS $60-{\mu}m$ data. We have found a good correlation between the 11-cm thermal continuum and the 60- 11m emissions, which is used to obtain the thermal and non-thermal 11-cm continuum maps of the W51 complex. Most of the thermal continuum is emanating from the compact H II regions and their low-density ionized envelopes in W51A and W51B. All the H II regions, except G49.1-0.4 in W51B, have associated molecular clumps. The thermal radio continuum fluxes of the compact H II regions are proportional to the CO fluxes of molecular clumps. This is consistent with the previous results that the total mass of stars in an H II region is proportional to the mass of the associated molecular clump. According to our result, there are three non-thermal continuum sources in W51: G49.4-0.4 in W51A, a weak source close to G49.2-0.3 in W51B, and the shell source W51C. The non-thermal flux of G49.5-0.4 at 11-cm is $\~28 Jy$, which is $\~25\%$ of its total 11-cm flux. The radio continuum spectrum between 0.15 and 300 GHz also suggests an excess emission over thermal free-free emission. We show that the excess emission can be described as a non-thermal emission with a spectral index ${\alpha}{\simeq}-1.0 (S_v{\propto}V^a)$ attenuated by thermal free-free absorptions at low-frequencies. The non-thermal source close to G49.2-0.3 is weak $(\~9 Jy)$. The nature of the source is not known and the reality of the non-thermal emission needs to be confirmed. The non~thermal shell source W51C has a 11-cm flux of $\~130Jy$ and a spectral index ${\alpha}{\simeq}-0.26$.

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