• JSTS:Journal of Semiconductor Technology and Science
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• 제13권1호
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• pp.15-21
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• 2013

In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.

• Journal of electromagnetic engineering and science
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• 제10권4호
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• pp.309-315
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• 2010

A dual-band dual-polarized microstrip antenna array for an advanced multi-function radio function concept (AMRFC) radar application operating at S and X-bands is proposed. Two stacked planar arrays with three different thin substrates (RT/Duroid 5880 substrates with $\varepsilon_r$=2.2 and three different thicknesses of 0.253 mm, 0.508 mm and 0.762 mm) are integrated to provide simultaneous operation at S band (3~3.3 GHz) and X band (9~11 GHz). To allow similar scan ranges for both bands, the S-band elements are selected as perforated patches to enable the placement of the X-band elements within them. Square patches are used as the radiating elements for the X-band. Good agreement exists between the simulated and the measured results. The measured impedance bandwidth (VSWR$\leq$2) of the prototype array reaches 9.5 % and 25 % for the S- and X-bands, respectively. The measured isolation between the two orthogonal polarizations for both bands is better than 15 dB. The measured cross-polarization level is ${\leq}-21$ dB for the S-band and ${\leq}-20$ dB for the X-band.

• ETRI Journal
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• 제38권5호
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• pp.972-980
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• 2016

An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial $0.25-{\mu}m$ AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Lange-couplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range.

• 전기전자학회논문지
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• 제23권1호
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• pp.181-187
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• 2019

In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial $0.25{\mu}m$ GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of $200{\mu}s$ and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are $3.5mm{\times}2.3mm$, generating the output power density of $2.71W/mm^2$. Its power added efficiency (PAE) is 42.6-50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• 한국자기학회지
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• 제14권1호
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• pp.52-57
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• 2004

본 연구에서는 ㎓ 대역의 박막 인덕터 특성을 수치해석 하였다. 인덕터의 기본 구조는 390$\mu\textrm{m}$${\times}$390$\mu\textrm{m}$, 5.5턴(turn), 선폭 10$\mu\textrm{m}$와 선간격 10$\mu\textrm{m}$의 사각 나선형이다. 주파수 특성은 10 ㎓까지 시뮬레이션 하였다. 기판은 Si, Sapphire, 유리와 GaAs를 모델로 하였고 도체는 Cu이다. 도체의 두께는 2$\mu\textrm{m}$로 고정하였다. 입력과 출력단자의 위치가 서로 반대가 되도록 하기 위하여 턴수는 n.5로 하였다. 기본 구조 인덕터는 초기 인덕턴스 13.0 nH,최대 인덕턴스 60.0 nH 그리고 공진주파수는 4.25 ㎓이었다. 기판의 유전상수가 증가하면 초기 인덕스는 거의 변화가 없으나 공진 주파수는 감소하였다. 인덕터의 턴수를 1.5에서 9.5로 변화시키면, 초기 인덕턴스는 2.9 nH며 16.9 nH로 포화되었으며 Q factor는 소폭 증가하였다. 인덕터의 선폭과 선간격을 증가시키면 초기와 최대 인덕턴스는 감소하였다. 공진 주파수는 증가하였으며, Q factor는 선폭과 선간격을 증가시키면 각각 증가와 감소를 나타내었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(1)
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• pp.221-224
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• 2004

This paper has researched on-chip spiral inductor in digital CMOS technology by modeling physical structure based on foundry parameter. To show the possibility of its application to RF design, we designed dual band RF front-end receiver. The simulated receiver have gain of 23/23.5 dB and noise figure of 2.8/3.36 dB at 2.45/5.25 GHz, respectively. It occupies $16mm^2$ in $0.25{\mu}m$ CMOS with 5 metal layer.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.478-484
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• 2000

The structural changes and the microwave dielectric properties of $Ba_{1-x}$/A$_{x}$/(Mg$_{1}$3//Nb$_{2}$3/)O$_3$(A=Sr, Ca=x0, 0.2, 0.4, 0.6, 0.8, 1.0) were investigated. The densities of samples are gradually decreased with increasing x(BMN=6.1, SMN=5.22 and CMN=4.26 g/m$^3$)The crystal structure of BMN was untilting of oxygen octahedral. The structural changes of BSMN showed the antiphase tilting at x>0.4, and those of BCMN showed the antiphase tilting at 0.20.8. The variation of dielectric constant with Sr was small(BMN=32, SMN=30) However the variation with Ca was large the highest value was 42 at Ca=0.2(CMN=25) The maximum quality factor was 68,000 GHz at Sr=0.2 and the minimum quality factor was 3,000 GHz at Ca=0.2 (BMN=35,000, SMN=20,000 and CMN=23,000 GHz) The temperature coefficients of resonant frequency of BSMN were about 2 times larger than those of BCMN in all composition.ion.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권2호
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• pp.139-142
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• 2008

An X-band MMIC power amplifier for radar application is developed using $0.25-{\mu}m$ gate length GaAs pHEMT technology. A bus-bar power combiner at output stage is used to minimize the combiner size and to simplify bias network. The fabricated power amplifier shows 38.75 dBm (7.5 Watt) Psat at 10 GHz. The chip size is $3.5\;mm{\times}3.9\;mm$.

• 전자공학회논문지A
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• 제33A권12호
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• pp.53-58
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• 1996

In this paper, a simple fabrication technique of an air-bridge for interconnection of isolated electrodes of microwave active and passive devices and MMIC's is proposed. The proposed air-bridge proceses are mainly combinations of thermal evaporation, positive photoresist and image reversal processes for easy lift-off of up to 2.0 .mu.m thick metal. According to the resutls of air-birdge processes, it is confirmed that air-gap and thickness of theair-bridge are about 3.5.mu.m, and 2.0.mu.m, respectively. And it is also possible to make the fine air-bridge with widths of 5~60.mu.m and post-intervals of 25~200.mu.m withot collapse. finally, GaAs power MESFET's and rectangular spiral inductors are fabricatd and measured in order to confirm of feasibility of the proposed air-bridge processes. The MAG of the fabricated power MESFET's is 10dB at 10GHz, and the inductance of the (200.mu. * 6 turns) rectangular spiral inductors 4.5 nH inX-band.

• 대한전자공학회논문지
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• 제22권6호
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• pp.63-70
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• 1985

Unilateral Fin-Line 구조와 I-평면 구조를 Rayleigh-Ritt의 변분법으로 해석하는 방법을 제시하고, Cohn의 여파기 설계 이론에 의해 대역통과 멸파기를 설계하는 CAD프로그램을 개각했다. 관내 재역폭이 5%∼24.6%인 Unilateral Fin-Line 여파기를 제작하여 수험과 이론이 일치함을보였다. 시험 결과, 삽입손실이 0.17∼0.2545의 저손실 여파특성을 얻었으며 중심주파교에 대한 오차는 0.2%이 내였다.