• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.353-357
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• 2010

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.4
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• pp.1993-1998
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• 2011

Semiconductor industry needs to have fine patterns in order to fabricate the high density integrated circuit. For nano-scale patterns, hard-mask is used to multi-layer structure which is formed by CVD (chemical vaporized deposition) process. In this work, we prepared single-layer hard-mask by using organic-inorganic hybrid polymer for spin-on process. The inorganic part of hard-mask was much easier etching than photo resist layer. Beside, the organic part of hard-mask was much harder etching than substrate layer. We characterized the optical and morphological properties to the hard mask films using organic-inorganic hybrid polymer, and then etch rate of photo resist layer and hard-mask film were compared. The hybrid polymer prepared from organic and inorganic materials was found to be useful hard-mask film to form the nano-patterns.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• Journal of Multimedia Information System
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• v.4 no.2
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• pp.65-73
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• 2017

This paper proposes a method to improve the image quality by designing Unsharp Mask Filter (UMF) based on Retinex theory which controls the frequency pass characteristics adaptively. Conventional unsharp masking technique uses blurring image to emphasize sharpness of image. Unsharp Masking(UM) adjusts the original image and sigma to obtain a high frequency component to be emphasized by the difference between the blurred image and the high frequency component to the original image, thereby improving the contrast ratio of the image. In this paper, we design a Unsharp Mask Filter(UMF) that can process the contrast ratio improvement method of Unsharp Masking(UM) technique with one filtering. We adaptively process the contrast ratio improvement using Unsharp Mask Filter(UMF). We propose a method based on Retinex theory for adaptive processing. For adaptive filtering, we control the weights of Unsharp Mask Filter(UMF) based on the human visual system and output more effective results.

• Journal of Distribution Science
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• v.17 no.4
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• pp.51-57
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• 2019

Purpose - This study aims to improve the distribution structure of the OLED market and develop cost-effective optimization techniques. Specifically, it is a study on the optimization of ferric chloride to improve the etch of SUS MASK for OLED. Research design, data, and methodology - Applying the optimal conditions of the experiment, the final confirmation was evaluated for improvement by the Process Capability Index (Cpk). It is possible to derive social performance such as improvement of precision of SUS MASK manufacturing, economic performance such as defect rate, reduction of waste generation and treatment cost, technological achievement such as SUS MASK production technology, improvement of profit structure of technology development and process improvement do. Results - The improvement of the Cpk before the improvement was made was confirmed to be 0.57% with a defect estimate of 25.07% with a failure estimate of 0.57% after the improvement, and 8.84% with a failure estimate of 0.57% level after the improvement. Conclusions - If the conclusions obtained from the specimen experiment are applied to the manufacturing process of SUS MASK, it will be possible to expect excellent cost-effective competitiveness due to the improvement of precision and reduction of defect rate to enhance the OLED market penetration.

• Journal of Information Display
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• v.6 no.3
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• pp.18-21
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• 2005

A new technology for reducing photolithography process from a four step to a three step process in the fabrication of TFT LCD is introduced. The core technology for 3-mask-TFT processes is the lift-off process [1], by which the PAS and PXL layers can be formed simultaneously. A different method of the lift-off process was developed in order to enhance the performance of efficiency with conventional positive and not negative PR which is the generally used in other lift-off process. In addition, the removal capacity of the ITO/PR in lift-off process was evaluated. The evaluation results showed that the new process can be run in conventional TFT production condition. In order to apply this new process in existing TFT process, several tests were conducted to ensure stability of the TFT process. It was found that the outgases from PR on the substrate in ITO sputtering chamber do not raise any problem, and the deposited ITO film beside the PR has conventional ITO qualities. Furthemore, the particles that were produced due to the ITO chips in PR strip bath could be reduced by the existing filtering system of stripper. With the development of total process and design of the structure for TFT using this technology, 3-mask-panels were achieved in TN and IPS modes, which showed the same display performances as those with the conventional 4mask process. The applicability and usefulness of the 3-mask process has already verified in the mass production line and in fact it currently being used for the production of some products.

• Korean Journal of Optics and Photonics
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• v.8 no.4
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• pp.345-352
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• 1997

Recently, in designing optical mask such as 4GDRAM, the scattering effect of electromagnetic wave must be considered. For this reason we claculated directly the mask function using the finite difference time domain(FDTD) method. The modification of image theory with this new mask function could explain clearly the scattering effect at the etched side wall of the submicron optical mask. The characteristics of the various type of alternating PSM were investigated. According to the simulation, the dual wet etch process was the most useful fabrication technique to overcoe the light scattering off at the shifted opening.

• Journal of the Optical Society of Korea
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• v.6 no.4
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• pp.180-184
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• 2002

In this study, we investigated mask errors, photo errors with attenuated phase shift mask and off-axis illumination, and etch errors in dry etch conditions. We propose that total process proximity correction (TPPC), a concept merging every process step error correction, is essential in a lithography process when minimum critical dimension (CD) is smaller than the wavelength of radiation. A correction rule table was experimentally obtained applying TPPC concept. Process capability of controlling gate CD in DRAM fabrication should be improved by this method.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.1
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• pp.22-26
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• 2003

Overlap Errors and side-lobes have been simultaneously solved by the rule-based correction using the rules extracted from test patterns. Lithography process parameters affecting attPSM lithography process have been determined by the fitting method to the real process data. The correction using scattering bars has been compared to the Cr shield method. The optimal insertion rule of the scattering bal's has made it possible to suppress the side-lobes and to enhance DOF at the same time. Therefore, in this paper, the solution to both side-lobe and overlap Error has been proposed using rule-based confection. Compared to the existing Cr shield method, the proposed rule-based correction with scattering bars can reduce the process complexity and time for mask production.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.4
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• pp.323-327
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• 2021

This paper produced SUS MASK, which is used for OLEDs, using an automatic liquid management system. The SUS MASK was tested by setting the hole diameter to 0.4 mm. The additive F300 was found to be excellent as the hole diameter was close to 0.4 mm and the error range was measured to be 0.08 on average. And as a result of measuring the weight reduction amount of CuCl2 and FeCl3 according to the change in oxidation-reduction potential (ORP), FeCl3 is relatively sensitive to ORP changes. Experiments were conducted on whether ORP (610 mV) and specific gravity (1.463) were automatically controlled while continuously etching the SUS Mask. Experimental results show that the automatic liquid management system is well controlled because the setting value is not significantly changed. After setting the hole diameter to 0.4 mm as the target, the experiment results were measured from 0.36 to 0.44. Therefore, it is expected that etching processing in the manufacturing process of SUS MASK can be improved with higher precision by applying the manufactured automatic liquid management system.