• 마이크로전자및패키징학회지
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• 제20권2호
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• pp.11-15
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• 2013

The wafer bonding process becomes a flexible approach to material and device integration. The bonding strength in 3-dimensional process is crucial factor in various interface bonding process such as silicon to silicon, silicon to metals such as oxides to adhesive intermediates. A measurement method of bonding strength was proposed by utilizing AFM applied CNT probe tip which indicated the relative simplicity in preparation of sample and to have merit capable to measure regardless type of films. Also, New Tool was utilized to measure of tip radius. The cleaned $SiO_2$-Si bonding strength of SPFM indicated 0.089 $J/m^2$, and the cleaning result by RCA 1($NH_4OH:H_2O:H_2O_2$) measured 0.044 $J/m^2$, indicated negligible tolerance which verified the possibility capable to measure accurate bonding strength. And it could be confirmed the effective bonding is possible through SPFM cleaning.

• Journal of Communications and Networks
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• 제4권4호
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• pp.336-343
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• 2002

A major challenge for next generation mobile communication is capturing the system architecture’s complexity with all its internal and external dependencies. Seamless integration of heterogeneous environments in all system parts is a key requirement. Moreover, future systems have to consider the different evolution cycles of individual system parts. Among those, services are expected to change the fastest. With respect to these considerations, we propose an overall architecture for next generation mobile communication systems. It covers all system parts from wireless transmission to applications including network and middleware platform. Our approach focuses on adaptability in terms of recon- figurability and programmability to support unanticipated system evolution. Therefore, we consider abstraction layers which consist of adaptable cooperating components grouped by open platforms rather than rigid system layers. In addition to that, we introduce cross-layer cooperation allowing an efficient use of the available resources. Specific scenarios illustrate the feasibility of our approach.

• 미생물학회지
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• 제29권1호
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• pp.16-24
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• 1991

The yeast gene THR1 encodes the homoserine kinase (EC 2.7.1.39: HKase) which catalyses the first step of the threonine specific arm at the end of the common pathway for methionine and threonine biosynthesis. A recombinant plasmid pMC3 (12.6 kilobase pairs, vector YCp50) has been cloned into E. coli HB101 from a yeast genomic library through its complementing activity of a thr1 mutation in a yeast recipient strain M39-1D. When subcloned into pMC32 (8.6kbp, vector YRp7) and pMC35 (8.3 kbp, vector YIp5), the HindIII fragment (2.7 kbp) of pMC3 insery was positive in the thrI complementing activity in both yeast and E. coli auxotrophic strains. The linearized pMC35 was introduced into the original recipient yeast strain and the mitotically stable chromosomal integrant was identified among the transformants. Through the tetrad analysis, the integration site of the pMC35 was localized to the region of THR1 structural gene at an expected genetic distance of approximately 11.1 cM from the ARG4 locus on the right arm of the yeast chromosome VIII. When episomically introduced into the auxotrophic cells and cultured in Thr omission liquid medium, the cloned gene overexpressed the HKase in the order of thirteen to fifteenfold, as compared with a wildtype. HKase levels are repressed by addition of threonine at the amount of 300 mg/l and 1, 190 mg/l for pMC32 and pMC3, respectively. Data from genetic analysis and HKase response thus support that the cloned HindIII yeast DNA fragment contains the yeast thr1 structural gene, along with necessary regulatory components for control of its proper expression.

• 한국정밀공학회지
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• 제32권1호
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• pp.17-24
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• 2015

Smart factory requires 4 Zero factors including Zero Waiting-time, Zero Inventory, Zero Defect, Zero Down-time) that needs IT convergence for production resources of 4M1E(Man, Machine, Material, Method, Energy) in real time and event processing in all type of manufacturing enterprises. This paper will be explaining about core emerging production IT convergence technologies including cyber device security, 4M1E integration, real time event driven architecture, common platform of manufacturing standard applications, smart factory to-be model for small and medium manufacturing enterprises.

• 한국식품과학회지
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• 제47권4호
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• pp.480-485
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• 2015

딸기 주스에 단독 DHP 처리 또는 열처리와 병합된 DHP 처리를 하였을 경우 6 log CFU/mL 이상의 토착 미생물 저해를 보여 주었다. 단독 DHP 처리와 열병합된 DHP 처리는 딸기 주스의 비타민 C와 색도에 영향을 주지 않으면서 당도를 상승시켰고 $4^{\circ}C$ 저장 중 색도와 당도를 유지시켰다. 특히 열병합된 DHP 처리는 저장 중 일반 가열처리와 유사한 미생물 안정성을 보이면서도 가열처리 보다 높은 비타민 C 함량과 색상 안정성을 보여주었다. 따라서 DHP 처리(단독 또는 열병합)는 딸기 주스의 품질 변화를 최소화 시키면서 미생물 저장 안정성을 높일 수 있는 최신 살균 공정으로 적용될 수 있을 것으로 판단되었다.

• 한국재료학회지
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• 제18권4호
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• pp.204-210
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• 2008

$1.5\;{\mu}m$-thick copper films deposited on silicon wafers were successfully bonded at $415^{\circ}C$/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than $10.4\;J/m^2$ as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than $300^{\circ}C$ had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over $400^{\circ}C$. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.

• 대한전자공학회논문지SD
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• 제46권2호
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• pp.64-70
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• 2009

0.13-um CMOS 공정을 이용하여 3GHz에서 6.2dB의 gain을 갖는 피드포워드 이퀄라이저를 구현하고 14.7dB의 감쇄를 갖는 7-m SATA 케이블을 통해 6Gbps의 데이터를 에러 없이 복원하였다. 제안한 이퀄라이저 회로는 varactor의 차동 연결을 통해서 기존 이퀄라이저에서 사용되는 varactor 면적의 1/4만을 사용하도록 설계되어 pad-frame에 집적할 수 있을 뿐만 아니라, 높은 동작 주파수 및 3.6mW의 낮은 전력 소모를 유지할 수 있다.

• 한국전자파학회논문지
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• 제19권7호
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• pp.707-712
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• 2008

본 논문에서는 3중(4+8+4-소자) 순차 회전 배열을 기본 부 배열로 하는 256-소자 순차 회전 배열 안테나를 설계하였다. 본 3중(4+8+4-소자) 순차 회전 배열 안테나는 3개의 동심 각으로 구성되어 있으며, 내각과 외각에는 각각 4개의 소자가, 중간 각에는 8개의 소자가 배열되어 있다. 안테나 이득을 극대로 하기 위하여 내각과 외각의 배열인자를 M=4, P=1로, 중간 각에 는 M=8, P=1로 하였다. 제안하는 3중(4+8+4)-소자 순차 배열 안테나와 256-소자 순차 회전 배열 안테나에 대한 모의분석 및 실험 결과들을 비교했을 때 집적도, 교차 편파준위 및 이득 특성 측면에서 모두 우수한 특성을 보였다.

• 반도체디스플레이기술학회지
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• 제22권4호
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• pp.93-98
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• 2023

As semiconductor devices become highly integrated and process difficulty increases, the need for highly sensitive sensors that can detect micro leaks is increasing. However, the noise contained in the CCD sensor itself acts as an obstacle to detecting fine leaks. In this study, integration time was changed for each condition, the sensor was cooled to 0℃, and the dark voltage level was measured to confirm through experiment the characteristics of the temporal noise included in the CCD sensor, a component of OES (Optical Emission Spectroscopy). When integration time was reduced from 30msec to 10msec, the dark voltage level decreased by about 20.5 % from an average of 151.5mV to 120.5mV. In the case of cooling device, Peltier elements were selected because of their simple structure and small size. During temperature cooling, the target temperature was controlled to within ±0.5℃ through PID control. When cooled from 20℃ to 0℃ using this cooling device, it was confirmed that the dark voltage level decreased by about 7% from an average of 147.0mV to 137.0mV.

• Smart Structures and Systems
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• 제22권4호
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• pp.425-432
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• 2018

Predicting the compressive strength of concrete has been considered as the initial phase across the cement production processing. The current study has focused on the integration of the concrete compressive strength in 28 days with the mix of the major oxides and fine aggregates as an experimental formula through the use of two types of Portland cement resulting the compressive strength of the concrete highly dependent on time.